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1. 发明授权

US08481397B2 Polysilicon resistor and E-fuse for integration with metal gate and high-k dielectric 有权
标题翻译：用于与金属栅极和高k电介质集成的多晶硅电阻器和电熔丝
公开(公告)号：US08481397B2
公开(公告)日：2013-07-09
申请号：US12719289
申请日：2010-03-08
申请人： Roger A. Booth, Jr. , Kangguo Cheng , Rainer Loesing , Chengwen Pei , Xiaojun Yu
发明人： Roger A. Booth, Jr. , Kangguo Cheng , Rainer Loesing , Chengwen Pei , Xiaojun Yu
IPC分类号： H01L21/20
CPC分类号： H01L21/02 , H01L21/768 , H01L23/525 , H01L29/12 , H01L29/86 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for making a resistive polycrystalline semiconductor device, e.g., a poly resistor of a microelectronic element such as a semiconductor integrated circuit. The method can include: (a) forming a layered stack including a dielectric layer contacting a surface of a monocrystalline semiconductor region of a substrate, a metal gate layer overlying the dielectric layer, a first polycrystalline semiconductor region adjacent the metal gate layer having a predominant dopant type of either n or p, and a second polycrystalline semiconductor region spaced from the metal gate layer by the first polycrystalline semiconductor region and adjoining the first polycrystalline semiconductor region; and (b) forming first and second contacts in conductive communication with the second polycrystalline semiconductor region, the first and second contacts being spaced apart so as to achieve a desired resistance. In a variation thereof, an electrical fuse is formed which includes a continuous silicide region through which a current can be passed to blow the fuse. Some of the steps of fabricating the poly resistor or the electrical fuse can be employed simultaneously in fabricating metal gate field effect transistors (FETs) on the same substrate.
摘要翻译：提供了一种用于制造电阻性多晶半导体器件的方法，例如诸如半导体集成电路的微电子元件的多晶硅电阻器。该方法可以包括：（a）形成层叠堆叠，其包括与衬底的单晶半导体区域的表面接触的电介质层，覆盖在电介质层上的金属栅极层，与金属栅极层相邻的第一多晶半导体区域，掺杂剂类型的n或p，以及第二多晶半导体区域，其与所述第一多晶半导体区域与所述金属栅极层隔开并邻接所述第一多晶半导体区域; 和（b）形成与所述第二多晶半导体区域导电连通的第一和第二触点，所述第一和第二触点间隔开以达到期望的电阻。在其变型中，形成电熔丝，其包括连续的硅化物区域，电流可以通过该硅化物区域通过以熔断熔丝。在同一衬底上制造金属栅极场效应晶体管（FET）的同时可以同时采用制造多晶硅电阻器或电熔丝的步骤。

2. 发明申请

US20110215321A1 POLYSILICON RESISTOR AND E-FUSE FOR INTEGRATION WITH METAL GATE AND HIGH-K DIELECTRIC 有权
标题翻译：用于与金属栅和高K电介质集成的多晶硅电阻器和电子熔断器
公开(公告)号：US20110215321A1
公开(公告)日：2011-09-08
申请号：US12719289
申请日：2010-03-08
申请人： Roger A. Booth, JR. , Kangguo Cheng , Rainer Loesing , Chengwen Pei , Xiaojun Yu
发明人： Roger A. Booth, JR. , Kangguo Cheng , Rainer Loesing , Chengwen Pei , Xiaojun Yu
IPC分类号： H01L29/12 , H01L21/02 , H01L21/768 , H01L29/86 , H01L23/525
CPC分类号： H01L21/02 , H01L21/768 , H01L23/525 , H01L29/12 , H01L29/86 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for making a resistive polycrystalline semiconductor device, e.g., a poly resistor of a microelectronic element such as a semiconductor integrated circuit. The method can include: (a) forming a layered stack including a dielectric layer contacting a surface of a monocrystalline semiconductor region of a substrate, a metal gate layer overlying the dielectric layer, a first polycrystalline semiconductor region adjacent the metal gate layer having a predominant dopant type of either n or p, and a second polycrystalline semiconductor region spaced from the metal gate layer by the first polycrystalline semiconductor region and adjoining the first polycrystalline semiconductor region; and (b) forming first and second contacts in conductive communication with the second polycrystalline semiconductor region, the first and second contacts being spaced apart so as to achieve a desired resistance. In a variation thereof, an electrical fuse is formed which includes a continuous silicide region through which a current can be passed to blow the fuse. Some of the steps of fabricating the poly resistor or the electrical fuse can be employed simultaneously in fabricating metal gate field effect transistors (FETs) on the same substrate.
摘要翻译：提供了一种用于制造电阻性多晶半导体器件的方法，例如诸如半导体集成电路的微电子元件的多晶硅电阻器。该方法可以包括：（a）形成层叠堆叠，其包括与衬底的单晶半导体区域的表面接触的电介质层，覆盖在电介质层上的金属栅极层，与金属栅极层相邻的第一多晶半导体区域，掺杂剂类型的n或p，以及第二多晶半导体区域，其与所述第一多晶半导体区域与所述金属栅极层隔开并邻接所述第一多晶半导体区域; 和（b）形成与所述第二多晶半导体区域导电连通的第一和第二触点，所述第一和第二触点间隔开以达到期望的电阻。在其变型中，形成电熔丝，其包括连续的硅化物区域，电流可以通过该硅化物区域通过以熔断熔丝。在同一衬底上制造金属栅极场效应晶体管（FET）的同时可以同时采用制造多晶硅电阻器或电熔丝的步骤。

3. 发明授权

US08685845B2 Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas 有权
标题翻译：使用氢气载气使碳和磷掺杂的硅的外延生长
公开(公告)号：US08685845B2
公开(公告)日：2014-04-01
申请号：US12860236
申请日：2010-08-20
申请人： Abhishek Dube , Ashima B. Chakravarti , Jinghong H. Li , Rainer Loesing , Dominic J. Schepis
发明人： Abhishek Dube , Ashima B. Chakravarti , Jinghong H. Li , Rainer Loesing , Dominic J. Schepis
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02529 , H01L21/02576 , H01L21/02587 , H01L21/02636 , H01L29/045 , H01L29/6656 , H01L29/78 , H01L29/7848
摘要： A method for depositing epitaxial films of silicon carbon (Si:C). In one embodiment, the method includes depositing an n-type doped silicon carbon (Si:C) semiconductor material on a semiconductor deposition surface using a deposition gas precursor composed of a silane containing gas precursor, a carbon containing gas precursor, and an n-type gas dopant source. The deposition gas precursor is introduced to the semiconductor deposition surface with a hydrogen (H2) carrier gas. The method for depositing epitaxial films may include an etch reaction provided by hydrogen chloride (HCl) gas etchant and a hydrogen (H2) carrier gas.
摘要翻译：一种用于沉积硅碳外延膜（Si：C）的方法。在一个实施例中，该方法包括：使用由含硅烷的气体前体，含碳气体前体和正极材料构成的沉积气体前体，在半导体沉积表面上沉积n型掺杂硅碳（Si：C）型气体掺杂剂源。沉积气体前体用氢（H 2）载气引入半导体沉积表面。沉积外延膜的方法可以包括由氯化氢（HCl）气体蚀刻剂和氢（H 2）载气提供的蚀刻反应。

4. 发明申请

US20120043556A1 EPITAXIAL GROWTH OF SILICON DOPED WITH CARBON AND PHOSPHORUS USING HYDROGEN CARRIER GAS 有权
标题翻译：用碳氢化合物与碳氢化合物掺杂的硅的外延生长
公开(公告)号：US20120043556A1
公开(公告)日：2012-02-23
申请号：US12860236
申请日：2010-08-20
申请人： Abhishek Dube , Ashima B. Chakravarti , Jinghong H. Li , Rainer Loesing , Dominic J. Schepis
发明人： Abhishek Dube , Ashima B. Chakravarti , Jinghong H. Li , Rainer Loesing , Dominic J. Schepis
IPC分类号： H01L29/12 , H01L21/203
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02529 , H01L21/02576 , H01L21/02587 , H01L21/02636 , H01L29/045 , H01L29/6656 , H01L29/78 , H01L29/7848
摘要： A method for depositing epitaxial films of silicon carbon (Si:C). In one embodiment, the method includes depositing an n-type doped silicon carbon (Si:C) semiconductor material on a semiconductor deposition surface using a deposition gas precursor composed of a silane containing gas precursor, a carbon containing gas precursor, and an n-type gas dopant source. The deposition gas precursor is introduced to the semiconductor deposition surface with a hydrogen (H2) carrier gas. The method for depositing epitaxial films may include an etch reaction provided by hydrogen chloride (HCl) gas etchant and a hydrogen (H2) carrier gas.
摘要翻译：一种用于沉积硅碳外延膜（Si：C）的方法。在一个实施例中，该方法包括：使用由含硅烷的气体前体，含碳气体前体和正极材料构成的沉积气体前体，在半导体沉积表面上沉积n型掺杂硅碳（Si：C）型气体掺杂剂源。沉积气体前体用氢（H 2）载气引入半导体沉积表面。沉积外延膜的方法可以包括由氯化氢（HCl）气体蚀刻剂和氢（H 2）载气提供的蚀刻反应。

5. 发明申请

US20090267118A1 METHOD FOR FORMING CARBON SILICON ALLOY (CSA) AND STRUCTURES THEREOF 审中-公开
标题翻译：形成碳硅合金（CSA）的方法及其结构
公开(公告)号：US20090267118A1
公开(公告)日：2009-10-29
申请号：US12111377
申请日：2008-04-29
申请人： Ashima B. Chakravarti , Abhishek Dube , Rainer Loesing , Dominic J. Schepis
发明人： Ashima B. Chakravarti , Abhishek Dube , Rainer Loesing , Dominic J. Schepis
IPC分类号： H01L49/00 , H01L21/20
CPC分类号： H01L21/02529 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L29/165 , H01L29/66636 , H01L29/78 , H01L29/7848
摘要： Methods for forming carbon silicon alloy (CSA) and structures thereof are disclosed. The method provides improvement in substitutionality and deposition rate of carbon in epitaxially grown carbon silicon alloy layers (i.e., substituted carbon in Si lattice). In one embodiment of the disclosed method, a carbon silicon alloy layer is epitaxially grown on a substrate at an intermediate temperature with a silicon precursor, a carbon (C) precursor in the presence of an etchant and a trace amount of germanium material (e.g., germane (GeH4)). The intermediate temperature increases the percentage of substitutional carbon in epitaxially grown CSA layer and avoids any tendency for silicon carbide to form. The presence of the trace amount of germanium material, of approximately less than 1% to approximately 5%, in the resulting epitaxial layer, has an effect of stabilizing and enhancing deposition/growth rate without compromising the tensile stress of CSA layer formed thereby.
摘要翻译：公开了形成碳硅合金（CSA）的方法及其结构。该方法提供了外延生长碳硅合金层（即Si晶格中的取代碳）的碳的取代度和沉积速率的改善。在所公开的方法的一个实施方案中，在中间温度下在硅衬底，碳（C）前体，在蚀刻剂和痕量锗材料存在下，在衬底上外延生长碳硅合金层（例如，（GeH4））。中间温度增加外延生长的CSA层中的替代碳的百分比，并避免形成碳化硅的任何倾向。在所得外延层中痕量锗材料的存在大约小于1％至约5％具有稳定和增强沉积/生长速率的效果，而不会影响由此形成的CSA层的拉伸应力。

6. 发明申请

US20090146181A1 INTEGRATED CIRCUIT SYSTEM EMPLOYING DIFFUSED SOURCE/DRAIN EXTENSIONS 审中-公开
标题翻译：采用扩散源/漏斗扩展的集成电路系统
公开(公告)号：US20090146181A1
公开(公告)日：2009-06-11
申请号：US11952939
申请日：2007-12-07
申请人： Chung Woh Lai , Oleg Gluschenkov , Henry K. Utomo , Lee Wee Teo , Jin Ping Liu , Anita Madan , Rainer Loesing , Jin-Ping Han , Hyung-Yoon Choi
发明人： Chung Woh Lai , Oleg Gluschenkov , Henry K. Utomo , Lee Wee Teo , Jin Ping Liu , Anita Madan , Rainer Loesing , Jin-Ping Han , Hyung-Yoon Choi
IPC分类号： H01L29/778 , H01L21/336 , H01L29/78
CPC分类号： H01L21/823814 , H01L21/823807 , H01L27/1203 , H01L29/165 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： An integrated circuit system that includes: providing a PFET device including a doped epitaxial layer; and forming a source/drain extension by employing an energy source to diffuse a dopant from the doped epitaxial layer.
摘要翻译：一种集成电路系统，包括：提供包括掺杂外延层的PFET器件; 以及通过使用能量源从掺杂的外延层扩散掺杂剂形成源极/漏极扩展。

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