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1. 发明申请

US20120028373A1 Bi-layer hard mask for the patterning and etching of nanometer size MRAM devices 有权
标题翻译：用于纳米尺寸MRAM器件的图案化和蚀刻的双层硬掩模
公开(公告)号：US20120028373A1
公开(公告)日：2012-02-02
申请号：US12804840
申请日：2010-07-30
申请人： Rodolfo Belen , Rongfu Xiao , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Rongfu Xiao , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L43/12 , B32B5/00 , B32B7/02 , B32B15/04
CPC分类号： H01L43/12 , Y10T428/12535 , Y10T428/24975 , Y10T428/266 , Y10T428/31504 , Y10T428/31678
摘要： A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.
摘要翻译：公开了一种复合硬掩模，其防止在限定MTJ形状的蚀刻工艺期间在MRAM器件中积累金属蚀刻残留物。结果，MTJ形状完整性得到显着提高。硬掩模具有较低的非磁性间隔物，中间导电层和上部牺牲介电层。在通过导电层的氟碳等离子体的图案转印期间，非磁性间隔物用作蚀刻停止层。光致抗蚀剂图案通过第一氟碳蚀刻转移通过电介质层。然后去除光致抗蚀剂，并且第二氟碳蚀刻将图案转移通过导电层。介电层在第二次氟碳蚀刻期间保护导电层的顶表面，并在第三次RIE步骤的大部分期间保护由C，H和O组成的气体，以将图案转移通过下面的MTJ层。

2. 发明授权

US08722543B2 Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices 有权
标题翻译：具有上部牺牲介电层的复合硬掩模，用于纳米尺寸MRAM器件的图案化和蚀刻
公开(公告)号：US08722543B2
公开(公告)日：2014-05-13
申请号：US12804840
申请日：2010-07-30
申请人： Rodolfo Belen , Rongfu Xiao , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Rongfu Xiao , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L21/302 , H01L21/00
CPC分类号： H01L43/12 , Y10T428/12535 , Y10T428/24975 , Y10T428/266 , Y10T428/31504 , Y10T428/31678
摘要： A composite hard mask is disclosed that prevents build up of metal etch residue in a MRAM device during etch processes that define an MTJ shape. As a result, MTJ shape integrity is substantially improved. The hard mask has a lower non-magnetic spacer, a middle conductive layer, and an upper sacrificial dielectric layer. The non-magnetic spacer serves as an etch stop during a pattern transfer with fluorocarbon plasma through the conductive layer. A photoresist pattern is transferred through the dielectric layer with a first fluorocarbon etch. Then the photoresist is removed and a second fluorocarbon etch transfers the pattern through the conductive layer. The dielectric layer protects the top surface of the conductive layer during the second fluorocarbon etch and during a substantial portion of a third RIE step with a gas comprised of C, H, and O that transfers the pattern through the underlying MTJ layers.
摘要翻译：公开了一种复合硬掩模，其防止在限定MTJ形状的蚀刻工艺期间在MRAM器件中积累金属蚀刻残留物。结果，MTJ形状完整性得到显着提高。硬掩模具有较低的非磁性间隔物，中间导电层和上部牺牲介电层。在通过导电层的氟碳等离子体的图案转印期间，非磁性间隔物用作蚀刻停止层。光致抗蚀剂图案通过第一氟碳蚀刻转移通过电介质层。然后去除光致抗蚀剂，并且第二氟碳蚀刻将图案转移通过导电层。介电层在第二次氟碳蚀刻期间保护导电层的顶表面，并在第三次RIE步骤的大部分期间保护由C，H和O组成的气体，以将图案转移通过下面的MTJ层。

3. 发明授权

US07863060B2 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices 有权
标题翻译：双重图案化和蚀刻用于自旋转移转矩MRAM器件的磁性隧道结结构的方法
公开(公告)号：US07863060B2
公开(公告)日：2011-01-04
申请号：US12383298
申请日：2009-03-23
申请人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L21/00
CPC分类号： H01L27/228 , H01L43/12
摘要： A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps each followed by two plasma etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers. The hard mask has an upper Ta layer with a thickness of 300 to 400 Angstroms and a lower NiCr layer less than 50 Angstroms thick. The upper Ta layer is etched with a fluorocarbon etch while lower NiCr layer and underlying MTJ layers are etched with a CH3OH. Preferably, a photoresist mask layer is removed by oxygen plasma between the fluorocarbon and CH3OH plasma etches. A lower hard mask layer made of NiCr or the like is inserted to prevent formation and buildup of Ta etch residues that can cause device shunting.
摘要翻译：公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。一种方法涉及两个光刻步骤，每个步骤分别采用两个等离子体蚀刻步骤，以在通过MTJ堆叠层传送的硬掩模中形成柱。硬掩模具有厚度为300至400埃的上层Ta层和小于50埃厚的较低NiCr层。用氟碳蚀刻蚀刻上层Ta层，同时用CH3OH蚀刻下层NiCr层和下层MTJ层。优选地，在碳氟化合物和CH 3 OH等离子蚀刻之间的氧等离子体去除光致抗蚀剂掩模层。插入由NiCr等制成的下部硬掩模层以防止可能导致器件分流的Ta蚀刻残留物的形成和积累。

4. 发明授权

US07936027B2 Method of MRAM fabrication with zero electrical shorting 有权
标题翻译：零电气短路的MRAM制造方法
公开(公告)号：US07936027B2
公开(公告)日：2011-05-03
申请号：US12006889
申请日：2008-01-07
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula
IPC分类号： G11C11/02
CPC分类号： H01L43/12 , H01L43/08
摘要： An MTJ cell without footings and free from electrical short-circuits across a tunneling barrier layer is formed by using a Ta hard mask layer and a combination of etches. A first etch patterns the Ta hard mask, while a second etch uses O2 applied in a single high power process at two successive different power levels. A first power level of between approximately 200 W and 500 W removes BARC, photoresist and Ta residue from the first etch, the second power level, between approximately 400 W and 600 W continues an etch of the stack layers and forms a protective oxide around the etched sides of the stack. Finally, an etch using a carbon, hydrogen and oxygen gas completes the etch while the oxide layer protects the cell from short-circuits across the lateral edges of the barrier layer.
摘要翻译：通过使用Ta硬掩模层和蚀刻的组合，形成没有底脚并且穿过隧道势垒层的电短路的MTJ电池。第一蚀刻图案Ta硬掩模，而第二蚀刻使用在两个连续的不同功率水平下在单个高功率过程中施加的O2。在大约200W至500W之间的第一功率电平从第一蚀刻去除BARC，光致抗蚀剂和Ta残留物，第二功率电平在大约400W至600W之间，继续蚀刻叠层，并在其周围形成保护氧化物蚀刻边的堆叠。最后，使用碳，氢和氧气的蚀刻完成了蚀刻，而氧化物层保护电池免受横跨阻挡层的侧边缘的短路。

5. 发明申请

US20100240151A1 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices 有权
标题翻译：双重图案化和蚀刻用于自旋转移转矩MRAM器件的磁性隧道结结构的方法
公开(公告)号：US20100240151A1
公开(公告)日：2010-09-23
申请号：US12383298
申请日：2009-03-23
申请人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
发明人： Rodolfo Belen , Tom Zhong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L21/04
CPC分类号： H01L27/228 , H01L43/12
摘要： A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps each followed by two plasma etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers. The hard mask has an upper Ta layer with a thickness of 300 to 400 Angstroms and a lower NiCr layer less than 50 Angstroms thick. The upper Ta layer is etched with a fluorocarbon etch while lower NiCr layer and underlying MTJ layers are etched with a CH3OH. Preferably, a photoresist mask layer is removed by oxygen plasma between the fluorocarbon and CH3OH plasma etches. A lower hard mask layer made of NiCr or the like is inserted to prevent formation and buildup of Ta etch residues that can cause device shunting.
摘要翻译：公开了一种用于在STT-MRAM中形成MTJ的方法，其中容易轴CD独立于硬轴CD来确定。一种方法涉及两个光刻步骤，每个步骤分别采用两个等离子体蚀刻步骤，以在通过MTJ堆叠层传送的硬掩模中形成柱。硬掩模具有厚度为300至400埃的上层Ta层和小于50埃厚的较低NiCr层。用氟碳蚀刻蚀刻上层Ta层，同时用CH3OH蚀刻下层NiCr层和下层MTJ层。优选地，在碳氟化合物和CH 3 OH等离子蚀刻之间的氧等离子体去除光致抗蚀剂掩模层。插入由NiCr等制成的下部硬掩模层以防止可能导致器件分流的Ta蚀刻残留物的形成和积累。

6. 发明申请

US20090173977A1 Method of MRAM fabrication with zero electrical shorting 有权
标题翻译：零电气短路的MRAM制造方法
公开(公告)号：US20090173977A1
公开(公告)日：2009-07-09
申请号：US12006889
申请日：2008-01-07
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula
IPC分类号： H01L43/00 , H01L29/82 , H01L43/12 , H01L21/467
CPC分类号： H01L43/12 , H01L43/08
摘要： An MTJ cell without footings and free from electrical short-circuits across a tunneling barrier layer is formed by using a Ta hard mask layer and a combination of etches. A first etch patterns the Ta hard mask, while a second etch uses O2 applied in a single high power process at two successive different power levels. A first power level of between approximately 200 W and 500 W removes BARC, photoresist and Ta residue from the first etch, the second power level, between approximately 400 W and 600 W continues an etch of the stack layers and forms a protective oxide around the etched sides of the stack. Finally, an etch using a carbon, hydrogen and oxygen gas completes the etch while the oxide layer protects the cell from short-circuits across the lateral edges of the barrier layer.
摘要翻译：通过使用Ta硬掩模层和蚀刻的组合，形成没有底脚并且穿过隧道势垒层的电短路的MTJ电池。第一蚀刻图案Ta硬掩模，而第二蚀刻使用在两个连续的不同功率水平下在单个高功率过程中施加的O2。在大约200W至500W之间的第一功率电平从第一蚀刻去除BARC，光致抗蚀剂和Ta残留物，第二功率电平在大约400W至600W之间，继续蚀刻叠层，并在其周围形成保护氧化物蚀刻边的堆叠。最后，使用碳，氢和氧气的蚀刻完成了蚀刻，而氧化物层保护电池免受横跨阻挡层的侧边缘的短路。

7. 发明申请

US20090078927A1 Composite hard mask for the etching of nanometer size magnetic multilayer based device 有权
标题翻译：复合硬掩模用于蚀刻纳米尺寸磁性多层器件
公开(公告)号：US20090078927A1
公开(公告)日：2009-03-26
申请号：US11901999
申请日：2007-09-20
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula , Adam Zhong
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhong , Witold Kula , Adam Zhong
IPC分类号： H01L29/06 , H01L21/02
CPC分类号： H01L43/12 , Y10T428/24736
摘要： A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.
摘要翻译：公开了一种复合硬掩模，其能够为高级装置（例如自旋扭矩MRAM）形成次100nm大小的MTJ电池。硬掩模具有较低的非磁性金属层，例如Ru，以将下层的中间金属间隔物（例如MnPt）与下层的自由层磁隔离。中间金属间隔件在后续处理期间提供高度余量以避免位线和最终装置中的MTJ单元之间的短路。上导电层可以由Ta制成，并且足够薄以使氟薄膜蚀刻中的薄覆盖光致抗蚀剂层中的MTJ图案能够通过Ta Ta传输而不消耗所有的光致抗蚀剂。使用C，H和O蚀刻气体组合物，通过第二蚀刻步骤将MTJ图案转移通过剩余的硬掩模层和下面的MTJ堆叠层。

8. 发明授权

US07713755B1 Field angle sensor fabricated using reactive ion etching 有权
标题翻译：使用反应离子蚀刻制造的场角传感器
公开(公告)号：US07713755B1
公开(公告)日：2010-05-11
申请号：US12316501
申请日：2008-12-11
申请人： Rongfu Xiao , Ruth Tong , Witold Kula , Chyu-Jiuh Torng
发明人： Rongfu Xiao , Ruth Tong , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L21/00
CPC分类号： H01L43/12
摘要： A high-amplitude magnetic angle sensor is described along with a process for its manufacture. A thin tantalum nitride hard mask, used to pattern the device, is left in place within the completed structure but, by first converting most of it to tantalum oxide, its effect on current shunting is greatly reduced.
摘要翻译：描述了高振幅磁角传感器及其制造方法。用于将器件图案化的薄氮化钽硬掩模在完成的结构内留在原位，但是通过首先将其大部分转换为氧化钽，其对电流分流的影响大大降低。

9. 发明授权

US07696551B2 Composite hard mask for the etching of nanometer size magnetic multilayer based device 有权
标题翻译：复合硬掩模用于蚀刻纳米尺寸磁性多层器件
公开(公告)号：US07696551B2
公开(公告)日：2010-04-13
申请号：US11901999
申请日：2007-09-20
申请人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhang , Witold Kula , Adam Zhang
发明人： Rongfu Xiao , Chyu-Jiuh Torng , Tom Zhang , Witold Kula , Adam Zhang
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , Y10T428/24736
摘要： A composite hard mask is disclosed that enables sub-100 nm sized MTJ cells to be formed for advanced devices such as spin torque MRAMs. The hard mask has a lower non-magnetic metallic layer such as Ru to magnetically isolate an overlying middle metallic spacer such as MnPt from an underlying free layer. The middle metallic spacer provides a height margin during subsequent processing to avoid shorting between a bit line and the MTJ cell in the final device. An upper conductive layer may be made of Ta and is thin enough to allow a MTJ pattern in a thin overlying photoresist layer to be transferred through the Ta during a fluorocarbon etch without consuming all of the photoresist. The MTJ pattern is transferred through the remaining hard mask layers and underlying MTJ stack of layers with a second etch step using a C, H, and O etch gas composition.
摘要翻译：公开了一种复合硬掩模，其能够为高级装置（例如自旋扭矩MRAM）形成次100nm大小的MTJ电池。硬掩模具有较低的非磁性金属层，例如Ru，以将下层的中间金属间隔物（例如MnPt）与下层的自由层磁隔离。中间金属间隔件在后续处理期间提供高度余量以避免位线和最终装置中的MTJ单元之间的短路。上导电层可以由Ta制成，并且足够薄以使氟薄膜蚀刻中的薄覆盖光致抗蚀剂层中的MTJ图案能够通过Ta Ta传输而不消耗所有的光致抗蚀剂。使用C，H和O蚀刻气体组合物，通过第二蚀刻步骤将MTJ图案转移通过剩余的硬掩模层和下面的MTJ堆叠层。

10. 发明授权

US08324698B2 High density spin-transfer torque MRAM process 有权
公开(公告)号：US08324698B2
公开(公告)日：2012-12-04
申请号：US12930333
申请日：2011-01-04
申请人： Tom Zhong , Chyu-Jiuh Torng , Rongfu Xiao , Adam Zhong , Wai-Ming Johnson Kan , Daniel Liu
发明人： Tom Zhong , Chyu-Jiuh Torng , Rongfu Xiao , Adam Zhong , Wai-Ming Johnson Kan , Daniel Liu
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , H01L43/12
摘要： A STT-MRAM integration scheme is disclosed wherein the connection between a MTJ and CMOS metal is simplified by forming an intermediate via contact (VAC) on a CMOS landing pad, a metal (VAM) pad that contacts and covers the VAC, and a MTJ on the VAM. A dual damascene process is performed to connect BIT line metal to CMOS landing pads through VAC/VAM/MTJ stacks in a device region, and to connect BIT line connection pads to CMOS connection pads through BIT connection vias outside the device region. The VAM pad is a single layer or composite made of Ta, TaN, or other conductors which serves as a diffusion barrier, has a highly smooth surface for MTJ formation, and provides excellent selectivity with refill dielectric materials during a chemical mechanical polish process. Each VAC is from 500 to 3000 Angstroms thick to minimize additional circuit resistance and minimize etch burden.

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