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    • 2. 发明授权
    • Systems and methods for enhancing plasma processing of a semiconductor substrate
    • 用于增强半导体衬底的等离子体处理的系统和方法
    • US06706142B2
    • 2004-03-16
    • US09997158
    • 2001-11-28
    • Stephen E. SavasJohn ZajacMark J. KushnerRonald L. Kinder
    • Stephen E. SavasJohn ZajacMark J. KushnerRonald L. Kinder
    • C23C1600
    • C23C16/505H01J37/321H01J37/3244H01J37/32623H01L21/3065H01L21/31116
    • Inductively-coupled plasma reactors for anisotropic and isotropic etching of a substrate, as well as chemical vapor deposition of a material onto a substrate. The reactor system comprises a processing chamber with a plasma shaping member contained therein. In one embodiment, the plasma shaping member extends from a portion of the top wall of the processing chamber, downward into the chamber, and it is generally positioned above the center of the substrate. The shaping member may be a separate piece of hardware attached to the top wall of the chamber, or it may be an integral part of the wall itself. Preferably, the plasma shaping member has a recessed portion in the middle and an extended portion located at a distance outside that of the recessed region. The plasma shaping member may be fabricated from virtually any material since it is at an electrically floating potential during processing of the substrate. The plasma shaping member serves to reduce the ion density in the middle of the chamber, above the center of the substrate, thereby enhancing the uniformity of the plasma throughout the chamber. The enhanced plasma uniformity in turn results in more uniform processing rates of a substrate.
    • 感应耦合等离子体反应器,用于各向异性和各向同性蚀刻衬底,以及将材料化学气相沉积到衬底上。 反应器系统包括其中包含等离子体成形构件的处理室。 在一个实施例中,等离子体成形构件从处理室的顶壁的一部分向下延伸到室中,并且其通常位于衬底的中心的上方。 成形构件可以是附接到室的顶壁的单独的硬件件,或者其可以是壁本身的整体部分。 优选地,等离子体成形构件在中间具有凹陷部分和位于凹陷区域外侧的延伸部分。 等离子体成形构件可以由几乎任何材料制成,因为它在衬底的加工期间处于电浮动电位。 等离子体成形构件用于降低腔的中间的离子密度,在衬底的中心之上,从而增强整个腔室中等离子体的均匀性。 增强的等离子体均匀性又导致衬底的更均匀的处理速率。
    • 3. 发明授权
    • Miniature, optically pumped narrow line solid state laser
    • 微型光泵浦窄线固态激光器
    • US5023877A
    • 1991-06-11
    • US546462
    • 1990-06-29
    • James G. EdenMark J. Kushner
    • James G. EdenMark J. Kushner
    • H01S3/063H01S3/091
    • H01S3/091H01S3/0632
    • A miniature solid state laser is optically pumped by ultraviolet radiation produced by a surface or corona discharge. The device is monolithic in that both the optical pump and the active medium are contiguous to a base material which is optically transparent in the ultraviolet range. The disclosed device consists of a substrate, a thin metal halide or crystalline or amorphous film deposited on the bottom of the substrate and a pair of spaced electrodes on the top of the substrate. When a high voltage pulse is applied across the spaced electrodes, discharge occurs between the electrodes and produces strong ultraviolet emissions which propagate through the substrate and dissociates the metal halide molecules in the film. This causes laser emission to occur on an atomic transition of the metal atom. The active laser medium may also be a crystalline platelet or amorphous thin film containing an impurity atom or molecule (an example would be YAG doped with Nd or LiYF.sub.4 (YLF) doped with cerium). In this case, the active medium may provide its own mechanical support, provides a surface on which the discharge may occur and thus eliminates the need for a separate optical substrate.
    • 微型固体激光器由表面或电晕放电产生的紫外线辐射光泵浦。 该装置是整体式的,因为光学泵和活性介质都与在紫外线范围内是光学透明的基材相邻。 所公开的器件由沉积在衬底底部上的衬底,薄金属卤化物或结晶或非晶膜以及衬底顶部上的一对隔开的电极组成。 当跨越间隔的电极施加高电压脉冲时,在电极之间发生放电,并产生强烈的紫外线辐射,其通过衬底传播并解离膜中的金属卤化物分子。 这导致激光发射在金属原子的原子跃迁上发生。 活性激光介质也可以是含有杂质原子或分子的结晶性薄片或非晶薄膜(实例是掺杂有掺杂有铈的Nd或LiYF 4(YLF)的YAG)。 在这种情况下,活性介质可以提供其自身的机械支撑,提供可以在其上发生放电的表面,从而不需要单独的光学基底。