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1. 发明授权

US06307322B1 Thin-film transistor circuitry with reduced sensitivity to variance in transistor threshold voltage 有权
标题翻译：薄膜晶体管电路对晶体管阈值电压的变化灵敏度降低
公开(公告)号：US06307322B1
公开(公告)日：2001-10-23
申请号：US09473504
申请日：1999-12-28
申请人： Robin Mark Adrian Dawson , Zilan Shen , Alfred Charles Ipri , Roger Green Stewart , Michael Gillis Kane
发明人： Robin Mark Adrian Dawson , Zilan Shen , Alfred Charles Ipri , Roger Green Stewart , Michael Gillis Kane
IPC分类号： G09G330
CPC分类号： H01L27/12 , H01S5/042
摘要： A circuit design technique polysilicon thin-film transistor (TFT) circuitry produces circuits that are relatively less sensitive to threshold variations among the TFT's than circuits designed using conventional techniques. The circuit is designed such that thin-film transistors that are sensitive to threshold variations are made larger than other thin-film transistors in the circuitry to minimize threshold variations among similar transistors implemented in the circuit. In one embodiment, a pixel structure for an active matrix display device implemented in polysilicon includes two transistors, a select transistor and a drive transistor. The drive transistor in the pixel structure is a thin film metal oxide silicon (MOS) transistor that includes a gate to source capacitance sufficient to hold an electrical potential which keeps the transistor in a conducting state for an image field interval. One embodiment of the pixel structure includes only the select transistor and the drive transistor. The pixel storage capacitance is entirely realized by the gate to source capacitance of the drive transistor. Another embodiment of the pixel structure includes a capacitor which is much smaller than the capacitor of a conventional active matrix pixel structure. This capacitor holds the pixel in a non-illuminated state when the drive transistor is turned off. This pixel structure may be used with any display technology that uses an active matrix and stores image data on a capacitance in the pixel, including without limitation, organic light emitting diodes, electroluminescent devices, and inorganic light emitting diodes.
摘要翻译：电路设计技术多晶硅薄膜晶体管（TFT）电路产生对于TFT之间的阈值变化比对使用常规技术设计的电路相对较不敏感的电路。电路被设计成使得对阈值变化敏感的薄膜晶体管比在电路中的其它薄膜晶体管大得多，以最小化在电路中实现的类似晶体管之间的阈值变化。在一个实施例中，用于在多晶硅中实现的有源矩阵显示装置的像素结构包括两个晶体管，一个选择晶体管和一个驱动晶体管。像素结构中的驱动晶体管是薄膜金属氧化物硅（MOS）晶体管，其包括足以保持电位的栅极 - 源极电容，其将晶体管保持在用于图像场间隔的导通状态。像素结构的一个实施例仅包括选择晶体管和驱动晶体管。像素存储电容完全由驱动晶体管的栅极到源极电容来实现。像素结构的另一实施例包括比常规有源矩阵像素结构的电容器小得多的电容器。当驱动晶体管关闭时，该电容器将像素保持在非照亮状态。该像素结构可以与使用有源矩阵的任何显示技术一起使用，并且将图像数据存储在像素中的电容上，包括但不限于有机发光二极管，电致发光器件和无机发光二极管。

2. 发明授权

US06229506B1 Active matrix light emitting diode pixel structure and concomitant method 失效
标题翻译：主动矩阵发光二极管像素结构及其伴随方法
公开(公告)号：US06229506B1
公开(公告)日：2001-05-08
申请号：US09064696
申请日：1998-04-22
申请人： Robin Mark Adrian Dawson , Michael Gillis Kane , James Ya-Kong Hsu , Fu-Lung Hsueh , Alfred Charles Ipri , Roger Green Stewart
发明人： Robin Mark Adrian Dawson , Michael Gillis Kane , James Ya-Kong Hsu , Fu-Lung Hsueh , Alfred Charles Ipri , Roger Green Stewart
IPC分类号： G09G332
CPC分类号： G09G3/3233 , G09G3/325 , G09G2300/0819 , G09G2300/0842 , G09G2300/0852 , G09G2300/0861 , G09G2320/02 , G09G2320/043
摘要： A LED pixel structure that reduces current nonuniformities and threshold voltage variations in a “drive transistor”of the pixel structure is disclosed. The LED pixel structure incorporates a current source for loading data into the pixel via a data line. Alternatively, an auto zero voltage is determined for the drive transistor prior to the loading of data.
摘要翻译：公开了一种降低像素结构的“驱动晶体管”中的电流不均匀性和阈值电压变化的LED像素结构。 LED像素结构包含用于经由数据线将数据加载到像素中的电流源。或者，在加载数据之前，确定驱动晶体管的自动零电压。

3. 发明授权

US06348906B1 Line scanning circuit for a dual-mode display 有权
标题翻译：行扫描电路，用于双模式显示
公开(公告)号：US06348906B1
公开(公告)日：2002-02-19
申请号：US09384063
申请日：1999-08-26
申请人： Robin Mark Adrian Dawson , Zilan Shen , Alfred Charles Ipri , Roger Green Stewart , James Harold Atherton , Stephen John Connor
发明人： Robin Mark Adrian Dawson , Zilan Shen , Alfred Charles Ipri , Roger Green Stewart , James Harold Atherton , Stephen John Connor
IPC分类号： G09G332
CPC分类号： G09G3/3233 , G09G3/20 , G09G3/3266 , G09G3/3291 , G09G2300/0819 , G09G2300/0852 , G09G2300/0861 , G09G2310/0286 , G09G2310/062 , G09G2310/063 , G09G2320/043
摘要： A row-select circuit for an organic light emitting diode display propagates a gating pulse through a shift register. This gating pulse is synchronized with a system clock signal and is used to selectively apply a plurality of broadcast control signals to a selected row of pixels on the display. The line scanning circuitry is controlled to clear and autozero the pixels in the display either one line at a time or the entire image frame at a time. According to another aspect of the invention, the clearing of a row of pixels in the display is performed over several line intervals before the row is autozeroed and loaded with new values. According to yet another aspect of the invention, the broadcast control signals may be adapted to achieve the best performance for each display device.
摘要翻译：用于有机发光二极管显示器的行选择电路通过移位寄存器传播门控脉冲。该选通脉冲与系统时钟信号同步，并且用于选择性地将多个广播控制信号应用于显示器上的所选择的像素行。线扫描电路被控制以一次清除或自动清零显示器中的像素一行或整个图像帧。根据本发明的另一方面，在行被自动归零并加载新值之前，在多个行间隔上执行显示器中的一行像素的清除。根据本发明的另一方面，广播控制信号可以适于为每个显示设备实现最佳性能。

4. 发明授权

US5736752A Active matrix electroluminescent display pixel element having a field shield means between the pixel and the switch 失效
标题翻译：有源矩阵电致发光显示像素元件在像素和开关之间具有场屏蔽装置
公开(公告)号：US5736752A
公开(公告)日：1998-04-07
申请号：US710271
申请日：1996-09-16
申请人： Fu-Lung Hseuh , Alfred Charles Ipri , Gary Mark Dolny , Roger Green Stewart
发明人： Fu-Lung Hseuh , Alfred Charles Ipri , Gary Mark Dolny , Roger Green Stewart
IPC分类号： H01L29/786 , G09G3/30 , H01L27/088 , H01L27/12 , H01L29/04 , G02F1/1343
CPC分类号： H01L27/1203 , G09G3/30 , H01L27/088 , H01L27/12 , G09G2300/0842
摘要： In an active matrix electroluminescent display, a pixel containing a grounded conductive electric field shield between an EL cell and the switching electronics for the EL cell. In a method of fabricating the pixel, first, an EL cell switching circuit is formed, then an insulating layer is formed over the switching circuit and a conductive layer (the field shield) is formed over the insulating layer. A through hole is provided in the field shield such that an electrical connection can be made between the switching circuit and an EL cell. The EL cell is then conventionally formed on top of the shield layer. Consequently, the shield isolates the switching circuit from the EL cell and ensures that any electric fields produced in the EL cell do not interfere with the operation of the switching electronics. Furthermore, the switching circuitry for each cell contains two transistors; a low voltage MOS transistor and a high voltage MOS transistor. The low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. This gate charge is stored between the gate electrode of the high voltage transistor and the electric field shield. Additionally, to improve the breakdown voltage of the high voltage transistor, a capacitive divider network is fabricated proximate the drift region of that transistor. As such, the network uniformly distributes an electric field over the drift region.
摘要翻译：在有源矩阵电致发光显示器中，包含EL单元和用于EL单元的开关电子器件之间的接地导电电场屏蔽的像素。在制造像素的方法中，首先，形成EL单元切换电路，然后在开关电路上形成绝缘层，并且在绝缘层上形成导电层（场屏蔽）。在屏蔽层中设置通孔，使得可以在开关电路和EL单元之间形成电连接。然后通常将EL电池形成在屏蔽层的顶部。因此，屏蔽将开关电路与EL单元隔离，并确保在EL单元中产生的任何电场不会干扰开关电子器件的操作。此外，每个单元的开关电路包含两个晶体管; 低压MOS晶体管和高压MOS晶体管。低电压晶体管由数据和选择线上的信号控制。当激活时，低压晶体管通过对高电压晶体管的栅极充电来激活高电压晶体管。该栅极电荷存储在高电压晶体管的栅电极和电场屏蔽之间。另外，为了提高高压晶体管的击穿电压，在该晶体管的漂移区附近制造电容分压网络。这样，网络在漂移区域上均匀分布电场。

5. 发明授权

US5932892A High-voltage transistor 失效
标题翻译：高压晶体管
公开(公告)号：US5932892A
公开(公告)日：1999-08-03
申请号：US993495
申请日：1997-12-18
申请人： Fu-Lung Hseuh , Alfred Charles Ipri , Gary Mark Dolny , Roger Green Stewart
发明人： Fu-Lung Hseuh , Alfred Charles Ipri , Gary Mark Dolny , Roger Green Stewart
IPC分类号： H01L29/786 , G09G3/30 , H01L27/088 , H01L27/12 , H01L29/04 , H01L29/76
CPC分类号： H01L27/1203 , G09G3/30 , H01L27/088 , H01L27/12 , G09G2300/0842
摘要： In an active matrix electroluminescent display, a pixel containing a grounded conductive electric field shield between an EL cell and the switching electronics for the EL cell. In a method of fabricating the pixel, first, an EL cell switching circuit is formed, then an insulating layer is formed over the switching circuit and a conductive layer (the field shield) is formed over the insulating layer. A through hole is provided in the field shield such that an electrical connection can be made between the switching circuit and an EL cell. The EL cell is then conventionally formed on top of the shield layer. Consequently, the shield isolates the switching circuit from the EL cell and ensures that any electric fields produced in the EL cell do not interfere with the operation of the switching electronics. Furthermore, the switching circuitry for each cell contains two transistors; a low voltage MOS transistor and a high voltage MOS transistor. The low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. This gate charge is stored between the gate electrode of the high voltage transistor and the electric field shield. Additionally, to improve the breakdown voltage of the high voltage transistor, a capacitive divider network is fabricated proximate the drift region of that transistor. As such, the network uniformly distributes an electric field over the drift region.
摘要翻译：在有源矩阵电致发光显示器中，包含EL单元和用于EL单元的开关电子器件之间的接地导电电场屏蔽的像素。在制造像素的方法中，首先，形成EL单元切换电路，然后在开关电路上形成绝缘层，并且在绝缘层上形成导电层（场屏蔽）。在屏蔽层中设置通孔，使得可以在开关电路和EL单元之间形成电连接。然后通常将EL电池形成在屏蔽层的顶部。因此，屏蔽将开关电路与EL单元隔离，并确保在EL单元中产生的任何电场不会干扰开关电子器件的操作。此外，每个单元的开关电路包含两个晶体管; 低压MOS晶体管和高压MOS晶体管。低电压晶体管由数据和选择线上的信号控制。当激活时，低压晶体管通过对高电压晶体管的栅极充电来激活高电压晶体管。该栅极电荷存储在高电压晶体管的栅电极和电场屏蔽之间。另外，为了提高高压晶体管的击穿电压，在该晶体管的漂移区附近制造电容分压网络。这样，网络在漂移区域上均匀分布电场。

6. 发明授权

US5952789A Active matrix organic light emitting diode (amoled) display pixel structure and data load/illuminate circuit therefor 失效
标题翻译：有源矩阵有机发光二极管（amoled）显示像素结构和数据加载/照明电路
公开(公告)号：US5952789A
公开(公告)日：1999-09-14
申请号：US834067
申请日：1997-04-14
申请人： Roger Green Stewart , Alfred Charles Ipri
发明人： Roger Green Stewart , Alfred Charles Ipri
IPC分类号： H05B33/08 , G09G3/20 , G09G3/30 , G09G3/32 , H01L33/00 , H01L51/50 , H05B33/12 , H05B33/14 , G09G3/10
CPC分类号： G09G3/3233 , G09G3/3283 , G09G3/3291 , G09G2300/0842 , G09G2300/0852 , G09G2300/0866 , G09G2300/0876 , G09G2310/0259 , G09G2310/0262 , G09G2310/027 , G09G2310/066 , G09G2320/043
摘要： A pixel structure for use in a display using organic light emitting diodes (O-LEDs) is described. Each pixel structure of an overall array includes an organic light emitting diode (O-LED). Additionally, the structure includes circuitry for allowing the structure to operate in three basic modes: write select mode, write deselect mode and an illuminate mode. Hence, the structure includes circuitry for causing the pixel structure to be selected such that data can be written to the pixel structure, said data representative of a programmed current level to be applied to the O-LED; circuitry for causing the pixel structure to be deselected when a pixel structure in a different row is having data written thereto; and circuitry for applying the programmed current level to the OLED, causing the O-LED to illuminate.
摘要翻译：描述了使用有机发光二极管（O-LED）的显示器中使用的像素结构。整个阵列的每个像素结构包括有机发光二极管（O-LED）。此外，该结构包括用于允许结构以三种基本模式操作的电路：写选择模式，写取消模式和照明模式。因此，该结构包括用于使像素结构被选择以使得可以将数据写入像素结构的电路，所述数据表示要施加到O-LED的编程电流电平; 当不同行中的像素结构具有向其写入的数据时，使得像素结构被取消选择的电路; 以及用于将编程的电流电平施加到OLED的电路，使得O-LED发光。

7. 发明授权

US4092209A Silicon implanted and bombarded with phosphorus ions 失效
标题翻译：用磷离子注入和轰击硅
公开(公告)号：US4092209A
公开(公告)日：1978-05-30
申请号：US755967
申请日：1976-12-30
申请人： Alfred Charles Ipri
发明人： Alfred Charles Ipri
IPC分类号： H01L21/265 , H01L21/306 , H01L21/3213
CPC分类号： H01L21/32134 , H01L21/26513 , H01L21/306 , Y10T428/24802
摘要： A composition of matter produced by a process wherein silicon is bombarded by phosphorus ions and phosphorus ions are implanted therein. A method for rendering silicon substantially unetchable in a potassium hydroxide etchant by implanting phosphorus in the silicon by brombardment with phosphorus ions.
摘要翻译：通过其中植入硅被磷离子和磷离子轰击的过程产生的物质组成。一种通过用磷离子溴化将磷浸入硅中，使硅在氢氧化钾蚀刻剂中基本上无法获取的方法。

8. 发明授权

US4035829A Semiconductor device and method of electrically isolating circuit components thereon 失效
标题翻译：在其上电隔离电路元件的半导体器件和方法
公开(公告)号：US4035829A
公开(公告)日：1977-07-12
申请号：US739823
申请日：1976-11-08
申请人： Alfred Charles Ipri , John Carl Sarace
发明人： Alfred Charles Ipri , John Carl Sarace
IPC分类号： H01L21/765 , H01L27/12 , H01L29/78
CPC分类号： H01L27/12 , H01L21/765
摘要： An integrated circuit device comprises a layer of semiconductor material on an insulating substrate. At least two spaced-apart circuit components, such as field-effect transistors, are formed in the layer of semiconductor material. The circuit components are electrically isolated from each other by a method of (1) forming a layer of insulating material over the layer of semiconductor material and between the circuit components, (2) forming a layer of electrically conductive material over the layer of insulating material, and (3) providing bias means between the layer of conductive material and the layer of semiconductor material so as to deplete completely a region in the layer of semiconductor material opposite to the layer of conductive material and between the circuit components.
摘要翻译：集成电路器件包括在绝缘衬底上的半导体材料层。在半导体材料层中形成至少两个间隔开的电路部件，例如场效应晶体管。电路部件通过以下方法彼此电隔离：（1）在半导体材料层之上和电路部件之间形成绝缘材料层，（2）在绝缘材料层上形成导电材料层，和（3）在导电材料层和半导体材料层之间提供偏置装置，从而完全消耗与导电材料层相对的半导体材料层和电路部件之间的区域。

9. 发明授权

US06104041A Switching circuitry layout for an active matrix electroluminescent display pixel with each pixel provided with the transistors 失效
标题翻译：具有提供有晶体管的每个像素的有源矩阵电致发光显示像素的开关电路布局
公开(公告)号：US06104041A
公开(公告)日：2000-08-15
申请号：US87570
申请日：1998-05-29
申请人： Fu-Lung Hsueh , Alfred Charles Ipri
发明人： Fu-Lung Hsueh , Alfred Charles Ipri
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , H01L29/404 , H01L29/78624
摘要： In an active matrix electroluminescent display, a pixel containing a electroluminescent cell and the switching electronics for the electroluminescent cell where said switching electronics contains two transistors, a low voltage MOS transistor and a high voltage MOS transistor. A low voltage transistor is controlled by signals on a data and a select line. When activated, the low voltage transistor activates the high voltage transistor by charging the gate of the high voltage transistor. The gate charge is stored between the gate electrode of the high voltage transistor and an electric field shield forming a pixel signal capacitor. The pixel signal capacitor is positioned within the layout of the pixel a distance from the drain of the high voltage MOS transistor.
摘要翻译：在有源矩阵电致发光显示器中，包含电致发光单元的像素和用于电致发光单元的开关电子器件，其中所述开关电子器件包含两个晶体管，低电压MOS晶体管和高压MOS晶体管。低电压晶体管由数据和选择线上的信号控制。当激活时，低压晶体管通过对高电压晶体管的栅极充电来激活高电压晶体管。栅极电荷存储在高压晶体管的栅电极和形成像素信号电容器的电场屏蔽之间。像素信号电容器位于与高压MOS晶体管的漏极相距一定距离的像素的布局内。

10. 发明授权

US4119992A Integrated circuit structure and method for making same 失效
标题翻译：集成电路结构及其制作方法
公开(公告)号：US4119992A
公开(公告)日：1978-10-10
申请号：US791945
申请日：1977-04-28
申请人： Alfred Charles Ipri , Joseph Hurlong Scott, Jr.
发明人： Alfred Charles Ipri , Joseph Hurlong Scott, Jr.
IPC分类号： H01L29/78 , H01L21/205 , H01L21/3205 , H01L21/768 , H01L21/8234 , H01L21/86 , H01L23/15 , H01L27/06 , H01L27/12 , H01L29/417 , H01L29/786
CPC分类号： H01L29/78657 , H01L21/32051 , H01L21/768 , H01L21/86 , H01L23/15 , H01L27/12 , H01L29/78618 , H01L21/0242 , H01L21/02491 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L2924/0002
摘要： The integrated circuit is manufactured upside down relative to conventional silicon-on-sapphire (SOS) processing techniques for manufacturing field effect transistors. First a conductive pattern, typically of a refractory metal, is deposited and defined on an insulating substrate, such as sapphire, and then silicon transistors are formed over the conductive pattern. Using the process, a masking step, namely the contact definition mask, used in conventional SOS manufacture, is eliminated.
摘要翻译：相对于用于制造场效应晶体管的常规蓝宝石（SOS）处理技术，该集成电路被倒置制造。首先，通常是难熔金属的导电图案被沉积并限定在诸如蓝宝石的绝缘基板上，然后在导电图案上形成硅晶体管。使用该过程，消除了用于常规SOS制造中的掩蔽步骤，即接触定义掩模。

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