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1. 发明授权

US06428847B1 Vortex based CVD reactor 失效
标题翻译：基于涡旋的CVD反应器
公开(公告)号：US06428847B1
公开(公告)日：2002-08-06
申请号：US09688555
申请日：2000-10-16
申请人： Robert W. Grant , Benjamin J. Petrone , Matthew D. Brubaker , Paul D. Mumbauer
发明人： Robert W. Grant , Benjamin J. Petrone , Matthew D. Brubaker , Paul D. Mumbauer
IPC分类号： C23C1600
CPC分类号： C23C16/45502 , C23C16/455 , C23C16/45563 , C30B25/14
摘要： Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.
摘要翻译：包含气流涡流形成的化学气相沉积反应器，用于在固定晶片衬底上进行均匀的化学气相沉积。包括化学蒸气的气流以切向的方式引入加热的反应器的内部，以在反应器内在固定晶片衬底上提供合适的均匀边界层控制。

2. 发明授权

US06391804B1 Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor 失效
标题翻译：快速热处理反应器中均匀直接辐射加热的方法和装置
公开(公告)号：US06391804B1
公开(公告)日：2002-05-21
申请号：US09590824
申请日：2000-06-09
申请人： Robert W. Grant , Benjamin J. Petrone , Ronald F. Klopp , Theodore E. Farley , Paul D. Mumbauer
发明人： Robert W. Grant , Benjamin J. Petrone , Ronald F. Klopp , Theodore E. Farley , Paul D. Mumbauer
IPC分类号： H01L21324
CPC分类号： H01L21/67115 , H01L21/67109
摘要： Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.
摘要翻译：在快速热处理反应器中用于均匀直接辐射加热的方法和装置，其中半导体晶片的宽度和宽度上的温度均匀度通过将半圆形热插入件放置在非常接近半导体晶片的过程中来实现。热能被热插入物从半导体晶片以高速率吸收，其中热插入物和半导体晶片之间的间隔处于最小并且逐渐降低的速率，其中热插入物和半导体晶片之间的间隔逐渐增加。还结合了保护环以抵消底部反射热能暴露。

3. 发明授权

US07771563B2 Systems and methods for achieving isothermal batch processing of substrates used for the production of micro-electro-mechanical-systems 有权
标题翻译：用于生产微电子机械系统的基板的等温批处理的系统和方法
公开(公告)号：US07771563B2
公开(公告)日：2010-08-10
申请号：US10991554
申请日：2004-11-18
申请人： Robert W. Grant , Benjamin J. Petrone , Paul D. Mumbauer
发明人： Robert W. Grant , Benjamin J. Petrone , Paul D. Mumbauer
IPC分类号： H01L21/306 , C03C25/68
CPC分类号： H01L21/6719 , H01L21/67103 , H01L21/67109 , H01L21/67303 , H01L21/67306 , H01L21/6732 , H01L21/67323 , H01L21/67748 , H01L21/67757 , H01L21/67781
摘要： A system and method for processing substrates that achieves isothermal and uniform fluid flow processing conditions for a plurality of substrates. In one aspect, the invention is a system and method that utilizes matching the emissivity value of the surfaces of a process chamber that oppose exposed surfaces of the substrates with the emissivity value of the exposed surfaces to achieve isothermal conditions throughout a substrate stack. In another aspect, the invention is system and method of processing substrates in a process chamber that exhibits excellent fluid flow uniformity by eliminating cavities or geometrical irregularities in the process chamber profile due to substrate loading openings. In yet anther aspect, the invention is a system and method of processing substrates wherein the process chamber comprises a liner and a shell, the liner constructed of a highly thermally conductive material, such as carbon, and the shell is constructed of a non-porous material, such as stainless steel.
摘要翻译：一种用于处理实现多个基板的等温且均匀的流体流动处理条件的基板的系统和方法。在一个方面，本发明是一种系统和方法，利用将处理室的与基板的暴露表面相对的表面的发射率与暴露表面的发射率值相匹配来实现整个衬底叠层的等温条件。在另一方面，本发明是在处理室中处理衬底的系统和方法，其通过消除由于衬底加载开口而导致的处理室轮廓中的空腔或几何不规则性而显示出优异的流体流动均匀性。在另一方面，本发明是一种处理衬底的系统和方法，其中处理室包括衬套和壳体，衬套由高导热性材料（例如碳）构成，壳体由无孔材质，如不锈钢。

4. 发明授权

US07431853B2 Selective etching of oxides from substrates 有权
标题翻译：从基底中选择性地蚀刻氧化物
公开(公告)号：US07431853B2
公开(公告)日：2008-10-07
申请号：US11370541
申请日：2006-03-08
申请人： Paul D. Mumbauer , Paul Roman , Robert Grant
发明人： Paul D. Mumbauer , Paul Roman , Robert Grant
IPC分类号： C23F1/00
CPC分类号： H01L21/31116 , B81C1/00595 , B81C1/0092 , B81C1/00928
摘要： A method and system for release etching a micro-electrical-mechanical-systems (MEMS) device from a substrate. In one aspect, the invention is a method comprising (a) supporting at least one substrate having a sacrificial oxide and a non-sacrificial material in a process chamber at a pressure and at a temperature; (b) introducing a gas phase mixture comprising a halide-containing species and an alcohol vapor selected from a group consisting of ethanol, 1-propanol, and an aliphatic alcohol having four carbon groups into the process chamber, the gas phase mixture having a volumetric ratio of the halide-containing species to the alcohol vapor of approximately 2 or less; and (c) etching the sacrificial oxide with the gas phase mixture. In another aspect, the invention is a system for carrying out the method.
摘要翻译：一种用于从基板释放蚀刻微电子机械系统（MEMS）器件的方法和系统。在一个方面，本发明是一种方法，其包括（a）在压力和温度下在处理室中支撑具有牺牲氧化物和非牺牲材料的至少一个衬底; （b）将含有卤化物的物质和选自乙醇，1-丙醇和具有四个碳原子的脂族醇的醇蒸气的气相混合物引入处理室，气相混合物具有体积含卤素物质与醇蒸气的比例约为2或更小; 和（c）用气相混合物蚀刻牺牲氧化物。另一方面，本发明是一种执行该方法的系统。

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