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1. 发明申请

US20110283941A1 STABLE WAFER-CARRIER SYSTEM 有权
标题翻译：稳定的载波系统
公开(公告)号：US20110283941A1
公开(公告)日：2011-11-24
申请号：US12963445
申请日：2010-12-08
申请人： Yan Rozenzon , Robert T. Trujillo , Steven C. Beese
发明人： Yan Rozenzon , Robert T. Trujillo , Steven C. Beese
IPC分类号： C23C16/00 , B05C13/00
CPC分类号： C23C16/4588 , C23C16/24 , C30B29/06 , C30B35/005
摘要： One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.
摘要翻译：本发明的一个实施例提供了用于承载晶片的沉积室中使用的晶片载体系统。晶片载体系统包括嵌入在基座内部的基座和顶部基座，其底部基座的晶片安装侧面向基座的晶片安装侧，从而形成基本封闭的窄通道。基座为顶部感受器提供向上的支撑。

2. 发明授权

US09240513B2 Dynamic support system for quartz process chamber 有权
标题翻译：石英加工室动态支撑系统
公开(公告)号：US09240513B2
公开(公告)日：2016-01-19
申请号：US13079623
申请日：2011-04-04
申请人： Robert T. Trujillo , Steven C. Beese , Yan Rozenzon
发明人： Robert T. Trujillo , Steven C. Beese , Yan Rozenzon
IPC分类号： H01L31/18 , F16F15/027 , C23C16/44 , C23C16/52 , F16F15/023
CPC分类号： H01L31/18 , C23C16/44 , C23C16/52 , F16F15/0232 , F16F15/027 , F16F15/0275 , F16M11/046 , F16M11/18
摘要： One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism.
摘要翻译：本发明的一个实施例提供了一种用于向沉积反应器提供动态支持的支撑系统。该系统包括配置成在沉积反应器和支撑系统之间提供耦合的联接机构，被配置成将支撑系统连接到外部框架的附接机构，以及位于联接机构和附接机构之间的至少一个气体波纹管。

3. 发明授权

US08562745B2 Stable wafer-carrier system 有权
标题翻译：稳定的晶圆载体系统
公开(公告)号：US08562745B2
公开(公告)日：2013-10-22
申请号：US12963445
申请日：2010-12-08
申请人： Yan Rozenzon , Robert T. Trujillo , Steven C. Beese
发明人： Yan Rozenzon , Robert T. Trujillo , Steven C. Beese
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4588 , C23C16/24 , C30B29/06 , C30B35/005
摘要： One embodiment of the present invention provides a wafer-carrier system used in a deposition chamber for carrying wafers. The wafer-carrier system includes a base susceptor and a top susceptor nested inside the base susceptor with its wafer-mounting side facing the base susceptor's wafer-mounting side, thereby forming a substantially enclosed narrow channel. The base susceptor provides an upward support to the top susceptor.
摘要翻译：本发明的一个实施例提供了用于承载晶片的沉积室中使用的晶片载体系统。晶片载体系统包括嵌入在基座内部的基座和顶部基座，其底部基座的晶片安装侧面向基座的晶片安装侧，从而形成基本封闭的窄通道。基座为顶部感受器提供向上的支撑。

4. 发明申请

US20110277690A1 MULTI-CHANNEL GAS-DELIVERY SYSTEM 有权
标题翻译：多通道气体输送系统
公开(公告)号：US20110277690A1
公开(公告)日：2011-11-17
申请号：US12952127
申请日：2010-11-22
申请人： Yan Rozenzon , Robert T. Trujillo , Steven C. Beese
发明人： Yan Rozenzon , Robert T. Trujillo , Steven C. Beese
IPC分类号： F16K37/00 , C23C16/511
CPC分类号： C23C16/45565 , C23C16/45512 , C23C16/45514 , C23C16/45561 , C23C16/45563 , C23C16/45578 , C30B25/14 , Y10T137/8158
摘要： One embodiment of the present invention provides a gas-delivery system for delivering reaction gas to a reactor chamber. The gas-delivery system includes a main gas-inlet port for receiving reaction gases and a gas-delivery plate that includes a plurality of gas channels. A gas channel includes a plurality of gas holes for allowing the reaction gases to enter the reactor chamber from the gas channel. The gas-delivery system further includes a plurality of sub-gas lines coupling together the main gas-inlet port and the gas-delivery plate, and a respective sub-gas line is configured to deliver a portion of the received reaction gases to a corresponding gas channel.
摘要翻译：本发明的一个实施例提供了一种用于将反应气体输送到反应室的气体输送系统。气体输送系统包括用于接收反应气体的主气体入口和包括多个气体通道的气体输送板。气体通道包括用于允许反应气体从气体通道进入反应室的多个气孔。气体输送系统还包括将主气体入口和气体输送板连接在一起的多个子气体管线，并且相应的副气体管线被配置为将一部分接收的反应气体输送到相应的气体通道。

5. 发明授权

US09441295B2 Multi-channel gas-delivery system 有权
标题翻译：多通道气体输送系统
公开(公告)号：US09441295B2
公开(公告)日：2016-09-13
申请号：US12952127
申请日：2010-11-22
申请人： Yan Rozenzon , Robert T. Trujillo , Steven C. Beese
发明人： Yan Rozenzon , Robert T. Trujillo , Steven C. Beese
IPC分类号： C23C16/455 , C30B25/14
CPC分类号： C23C16/45565 , C23C16/45512 , C23C16/45514 , C23C16/45561 , C23C16/45563 , C23C16/45578 , C30B25/14 , Y10T137/8158
摘要： One embodiment of the present invention provides a gas-delivery system for delivering reaction gas to a reactor chamber. The gas-delivery system includes a main gas-inlet port for receiving reaction gases and a gas-delivery plate that includes a plurality of gas channels. A gas channel includes a plurality of gas holes for allowing the reaction gases to enter the reactor chamber from the gas channel. The gas-delivery system further includes a plurality of sub-gas lines coupling together the main gas-inlet port and the gas-delivery plate, and a respective sub-gas line is configured to deliver a portion of the received reaction gases to a corresponding gas channel.
摘要翻译：本发明的一个实施例提供了一种用于将反应气体输送到反应室的气体输送系统。气体输送系统包括用于接收反应气体的主气体入口和包括多个气体通道的气体输送板。气体通道包括用于允许反应气体从气体通道进入反应室的多个气孔。气体输送系统还包括将主气体入口和气体输送板连接在一起的多个子气体管线，并且相应的副气体管线被配置为将一部分接收的反应气体输送到相应的气体通道。

6. 发明申请

US20110277688A1 DYNAMIC SUPPORT SYSTEM FOR QUARTZ PROCESS CHAMBER 有权
标题翻译：用于QUARTZ过程室的动态支持系统
公开(公告)号：US20110277688A1
公开(公告)日：2011-11-17
申请号：US13079623
申请日：2011-04-04
申请人： Robert T. Trujillo , Steven C. Beese , Yan Rozenzon
发明人： Robert T. Trujillo , Steven C. Beese , Yan Rozenzon
IPC分类号： C23C16/52 , H01L31/18 , F16F9/02 , C23C16/44
CPC分类号： H01L31/18 , C23C16/44 , C23C16/52 , F16F15/0232 , F16F15/027 , F16F15/0275 , F16M11/046 , F16M11/18
摘要： One embodiment of the present invention provides a support system for providing dynamic support to a deposition reactor. The system includes a coupling mechanism configured to provide coupling between the deposition reactor and the support system, an attachment mechanism configured to attach the support system to an external frame, and at least one gas bellows situated between the coupling mechanism and the attachment mechanism.
摘要翻译：本发明的一个实施例提供了一种用于向沉积反应器提供动态支持的支撑系统。该系统包括配置成在沉积反应器和支撑系统之间提供耦合的联接机构，被配置成将支撑系统连接到外部框架的附接机构，以及位于联接机构和附接机构之间的至少一个气体波纹管。

7. 发明授权

US08610033B1 Rapid thermal process reactor utilizing a low profile dome 失效
标题翻译：快速热处理反应堆利用低调圆顶
公开(公告)号：US08610033B1
公开(公告)日：2013-12-17
申请号：US11731207
申请日：2007-03-29
申请人： Gary M. Moore , Katsuhito Nishikawa , Steven C. Beese
发明人： Gary M. Moore , Katsuhito Nishikawa , Steven C. Beese
IPC分类号： F27B5/14 , H01L21/67 , F27B17/00
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67115 , H01L21/6719
摘要： A rapid thermal process reactor includes a vessel having a dome assembly. The vessel bounds a reactor chamber for rapid thermal processing of one or more substrates. The dome assembly includes a low profile dome and a flange surrounding and abutting the low profile dome. The flange includes a top surface; a bottom surface, removed from and opposite the top surface; an outer circumferential edge surface connecting the top surface and the bottom surface; and an inner edge surface, opposite and removed from said outer circumferential edge, including a portion abutting said low profile dome. The rapid thermal process reactor also includes a radiant heat source; a gas ring mounted about a sidewall of the vessel; a gas ring shield mounted as part of the sidewall of the vessel; a clamp ring to clamp the dome assembly in place; and a clamp ring shield mounted on the clamp ring.
摘要翻译：快速热处理反应器包括具有圆顶组件的容器。容器界定了一个反应室，用于一个或多个基材的快速热处理。圆顶组件包括一个低矮的圆顶和围绕和邻接低矮圆顶的凸缘。凸缘包括顶面; 底表面，从顶表面移除并与顶表面相对; 连接顶表面和底表面的外周边表面; 以及与所述外周边缘相对且从所述外周边缘移除的内边缘表面，包括邻接所述低矮圆顶的部分。快速热处理反应器还包括辐射热源; 围绕容器的侧壁安装的气环; 安装在容器侧壁的一部分上的气体环形屏蔽件; 夹紧环，将圆顶组件夹紧就位; 并安装在夹环上的夹环环形屏蔽。

8. 发明授权

US5801961A Power management system for a semiconductor processing facility 失效
标题翻译：半导体加工设备的电源管理系统
公开(公告)号：US5801961A
公开(公告)日：1998-09-01
申请号：US757697
申请日：1996-12-03
申请人： Gary M. Moore , Michael Peterson , Steven C. Beese
发明人： Gary M. Moore , Michael Peterson , Steven C. Beese
IPC分类号： H01L21/00 , H02J1/00 , G01R19/30 , H02J3/00 , H02J3/46
CPC分类号： H01L21/67276 , Y10T307/313 , Y10T307/391
摘要： Semiconductor processing tools in a semiconductor processing facility are coupled to communicate with a power management system. The power management system monitors the power consumption status of each of the semiconductor processing tools. Using the power consumption status of each of the semiconductor processing tools, the power management system stages the operation of the semiconductor processing tools so as to maintain the power consumption of the semiconductor processing facility below a predefined maximum power consumption. Limiting the power consumption to less than the predefined maximum power consumption reduces the per die processing costs without incurring the expense of building a new semiconductor processing facility or without modifying the semiconductor processing tools for larger batch sizes or for greater throughput.
摘要翻译：半导体处理设备中的半导体处理工具被耦合以与电力管理系统通信。电源管理系统监视每个半导体处理工具的功耗状态。使用每个半导体处理工具的功耗状态，电力管理系统对半导体处理工具的操作进行分级，以便将半导体处理设备的功耗维持在预定的最大功耗以下。将功耗限制在小于预定义的最大功耗的情况下，可以降低每个模具的处理成本，而不会导致构建新的半导体处理设备的费用，或者不修改更大批量大小的半导体处理工具或更大的吞吐量。

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