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    • 9. 发明授权
    • Light emitting diode
    • 发光二极管
    • US06712478B2
    • 2004-03-30
    • US10346843
    • 2003-01-16
    • Jinn-Kong SheuDaniel KuoSamuel Hsu
    • Jinn-Kong SheuDaniel KuoSamuel Hsu
    • H01L2715
    • H01L33/32B82Y20/00H01L33/04
    • A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An active layer is covered between an upper and a lower cladding layers. The active later include III-N group compound semiconductive material. A SLS contact layer is located on the upper cladding layer. A transparent electrode is located on the contact later to serve as an anode. Another electrode layer has contact with the buffer layer, and is separated from the lower and upper cladding layers.
    • 在衬底上形成具有应变层超晶格(SLS)晶体结构的发光二极管。 在基板上依次形成成核层和缓冲层,以便于随后的晶体生长工艺中的晶体生长。 有源层被覆盖在上部和下部包层之间。 活性后者包括III-N族化合物半导体材料。 SLS接触层位于上覆层上。 透明电极稍后位于触点上用作阳极。 另一个电极层与缓冲层接触,并与下包层和上覆层分离。