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1. 发明申请

US20060003253A1 Energy harvesting molecules and photoresist technology 失效
标题翻译：能量收集分子和光刻胶技术
公开(公告)号：US20060003253A1
公开(公告)日：2006-01-05
申请号：US10881475
申请日：2004-06-30
申请人： Robert Meagley , Michael Goodner , Robert Leet , Michael McSwiney
发明人： Robert Meagley , Michael Goodner , Robert Leet , Michael McSwiney
IPC分类号： G03C1/492
CPC分类号： G03F7/0045 , Y10S430/106 , Y10S430/108 , Y10S430/115 , Y10S430/122 , Y10S430/126
摘要： A composition including a first moiety; and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that energy harvested at the second moiety may be transferred to the first moiety. An article of manufacture including a film including a first moiety and a different second moiety capable of harvesting energy from an external source, wherein the second moiety is positioned such that collectively the first and second moieties have an electron capture cross-section greater than the electron capture cross-section of the first moiety alone. A method including forming a film on a substrate including a first moiety and a different second moiety; exposing the film to photonic or charged particle radiation; and patterning the film.
摘要翻译：包含第一部分的组合物; 以及能够从外部源收获能量的不同的第二部分，其中第二部分被定位成使得在第二部分收获的能量可以转移到第一部分。包括包括第一部分和能够从外部源收集能量的不同第二部分的膜的制品，其中所述第二部分被定位成使得所述第一部分和所述第二部分的电子捕获截面大于所述电子仅捕获第一部分的横截面。一种方法，包括在包括第一部分和不同的第二部分的基底上形成膜; 将膜暴露于光子或带电粒子辐射; 并构图。

2. 发明申请

US20060046206A1 Photoactive resist capping layer 有权
公开(公告)号：US20060046206A1
公开(公告)日：2006-03-02
申请号：US10927885
申请日：2004-08-27
申请人： Robert Meagley , Michael McSwiney , Michael Goodner , Robert Leet , Manish Chandhok
发明人： Robert Meagley , Michael McSwiney , Michael Goodner , Robert Leet , Manish Chandhok
IPC分类号： G03F7/00
CPC分类号： G03F7/40
摘要： A cap may be formed anisotropically over a photoresist feature. For example, a material, such as a polymer, may be coated over the photoresist feature. If the coated material is photoactive, the cap may be grown preferentially in the vertical direction, creating high aspect ratio structures in some embodiments of the present invention.

3. 发明申请

US20060063394A1 Precursors for film formation 失效
公开(公告)号：US20060063394A1
公开(公告)日：2006-03-23
申请号：US10947820
申请日：2004-09-22
申请人： Michael McSwiney , Huey-Chiang Liou , Michael Goodner , Robert Leet , Robert Meagley
发明人： Michael McSwiney , Huey-Chiang Liou , Michael Goodner , Robert Leet , Robert Meagley
IPC分类号： H01L21/31
CPC分类号： H01L21/02222 , C23C16/22 , H01L21/02123 , H01L21/02203 , H01L21/02211 , H01L21/3125 , H01L21/3185
摘要： A method including introducing a precursor in the presence of a circuit substrate, and forming a film including a reaction product of the precursor on the substrate, wherein the precursor includes a molecule comprising a primary species of the film and a modifier. A method including introducing a precursor in the presence of a circuit substrate, the precursor including a primary species and a film modifier as a single source, and forming a film on the circuit substrate. An apparatus including a semiconductor substrate, and a film on a surface of the semiconductor substrate, the film including a reaction product of a precursor including a molecule comprising a primary species and a modifier.

4. 发明申请

US20070032675A1 Forming a dielectric layer using a hydrocarbon-containing precursor 审中-公开
标题翻译：使用含烃前体形成介电层
公开(公告)号：US20070032675A1
公开(公告)日：2007-02-08
申请号：US11580399
申请日：2006-10-13
申请人： Robert Meagley , Michael Goodner , Andrew Ott , Grant Kloster , Michael McSwiney , Bob Leet
发明人： Robert Meagley , Michael Goodner , Andrew Ott , Grant Kloster , Michael McSwiney , Bob Leet
IPC分类号： C04B41/50 , C07F7/02
CPC分类号： H01L21/02126 , C23C16/401 , H01L21/02216 , H01L21/02274 , H01L21/3122 , H01L21/31633
摘要： In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.
摘要翻译：在一个实施方案中，本发明包括将含有烃取代基的前体和任选的第二常规或含烃前体引入气相沉积设备中; 以及在所述气相沉积设备内的所述前体上形成具有所述烃取代基的介电层。在某些实施方案中，至少一部分烃取代基可以稍后从介电层去除以降低其密度。

5. 发明申请

US20060183348A1 Layered films formed by controlled phase segregation 有权
标题翻译：通过控制相分离形成的层状膜
公开(公告)号：US20060183348A1
公开(公告)日：2006-08-17
申请号：US11060843
申请日：2005-02-17
申请人： Robert Meagley , Michael Leeson , Michael Goodner , Bob Leet , Michael McSwiney , Shan Clark
发明人： Robert Meagley , Michael Leeson , Michael Goodner , Bob Leet , Michael McSwiney , Shan Clark
IPC分类号： H01L21/31
CPC分类号： H01L21/76808 , G03F7/091 , H01L21/0276 , H01L21/31144 , H01L21/76822 , H01L21/76829 , H01L21/76834 , H01L21/76835
摘要： Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.
摘要翻译：集成电路处理中的多层膜可以通过在半导体衬底上形成的单一组合物的相分离来形成。然后将组合物诱导相分离成至少第一连续相和第二连续相。组合物可以由相分离成不同连续层的两种或多种组分形成。组合物还可以是单一组分，其在活化时分解成两个或多个相分离成不同连续层的组分。相分离可用于形成例如牺牲光吸收材料（SLAM）和显影剂抗性皮肤，介电层和硬掩模，光致抗蚀剂和抗反射涂层（ARC），应力缓冲涂层和衬底封装上的保护层，以及光干涉层。

6. 发明申请

US20060068318A1 Pixelated photoresists 有权
标题翻译：像素化光刻胶
公开(公告)号：US20060068318A1
公开(公告)日：2006-03-30
申请号：US10956284
申请日：2004-09-30
申请人： Robert Meagley , Michael Goodner , Bob Leet , Michael McSwiney
发明人： Robert Meagley , Michael Goodner , Bob Leet , Michael McSwiney
IPC分类号： G03C1/76
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.
摘要翻译：光致酸产生剂，溶解度开关，可光成象物质和猝灭剂的故意设计的放置和尺寸约束（分子量分布）在光致抗蚀剂内形成各个像素。在照射时，在被照射以对光致抗蚀剂进行图案化的各个像素内发生独立的反应。这些像素可以具有各种形式，包括由几个聚合物链形成的聚合物链，大体积聚集体，胶束或胶束。此外，这些像素可以被设计为自组装到其上施加光致抗蚀剂的基板上。

7. 发明申请

US20050258107A1 Metal ion separation from aqueous solutions using photoswitchable ionophores 有权
标题翻译：使用可开关的离子载体从水溶液中分离金属离子
公开(公告)号：US20050258107A1
公开(公告)日：2005-11-24
申请号：US10850414
申请日：2004-05-20
申请人： Bob Leet , Robert Meagley , Michael Goodner , Michael McSwiney
发明人： Bob Leet , Robert Meagley , Michael Goodner , Michael McSwiney
IPC分类号： B03C1/00 , C02F1/26 , C02F1/30 , C02F1/32 , C02F1/68 , C22B3/24 , C22B3/26
CPC分类号： C02F1/683 , C02F1/26 , C02F1/30 , C02F1/32 , C02F2101/20 , C22B3/0097 , C22B3/24 , Y02P10/234 , Y02W10/37 , Y10T436/25375
摘要： Methods and systems for the concentration and removal of metal ions from aqueous solutions are described, comprising treating the aqueous solutions with photoswitchable ionophores.
摘要翻译：描述了从水溶液中浓缩和去除金属离子的方法和系统，包括用可光开关的离子载体处理水溶液。

8. 发明申请

US20050014378A1 Substrate patterning integration 审中-公开
标题翻译：基板图案集成
公开(公告)号：US20050014378A1
公开(公告)日：2005-01-20
申请号：US10621744
申请日：2003-07-16
申请人： Michael Goodner , Bob Leet , Robert Meagley , Michael McSwiney
发明人： Michael Goodner , Bob Leet , Robert Meagley , Michael McSwiney
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/31144
摘要： A substrate patterning integration is disclosed to address structural and process limitations of conventional resist patterning over hardmask techniques. A resist layer positioned adjacent a substrate layer is patterned, subsequent to which a hardmask layer is deposited. The hardmask layer may be thinned to expose remaining portions of the patterned resist layer for removal by chemical treatment to expose portions of the underlying substrate layer into which the pattern may be transferred using wet or dry chemical etch techniques.
摘要翻译：公开了衬底图案化集成以解决传统抗蚀剂图案化在硬掩模技术上的结构和工艺限制。对邻近衬底层定位的抗蚀剂层进行图案化，随后沉积硬掩模层。硬掩模层可以变薄以暴露图案化的抗蚀剂层的剩余部分，以通过化学处理去除，以暴露使用湿式或干式化学蚀刻技术将图案转移到其中的下层基底层的部分。

9. 发明申请

US20050025885A1 Low-temperature silicon nitride deposition 失效
标题翻译：低温氮化硅沉积
公开(公告)号：US20050025885A1
公开(公告)日：2005-02-03
申请号：US10631627
申请日：2003-07-30
申请人： Michael McSwiney , Michael Goodner
发明人： Michael McSwiney , Michael Goodner
IPC分类号： C23C16/34 , C23C16/00
CPC分类号： C23C16/345
摘要： A method including combining a silicon source precursor and a nitrogen source precursor at a temperature up to 550° C.; and forming a silicon nitride film. A system including a chamber; a silicon precursor source coupled to the chamber; a controller configured to control the introduction into the chamber of a silicon precursor from the silicon precursor source; and a memory coupled to the controller comprising a machine-readable medium having a machine-readable program embodied therein for directing operation of the system, the machine-readable program including instructions for controlling the second precursor source to introduce an effective amount of silicon precursor into the chamber at a temperature up to 550° C.
摘要翻译：一种方法，包括在高达550℃的温度下组合硅源前体和氮源前体; 并形成氮化硅膜。包括室的系统耦合到所述室的硅前体源; 控制器，被配置为控制从所述硅前体源引入所述室中的硅前体; 以及耦合到控制器的存储器，包括机器可读介质，其具有体现在其中的机器可读程序，用于引导系统的操作，该机器可读程序包括用于控制第二前驱源的指令，以将有效量的硅前体引入该室温度高达550°C

10. 发明申请

US20060205221A1 Method to modulate etch rate in SLAM 失效
公开(公告)号：US20060205221A1
公开(公告)日：2006-09-14
申请号：US11417615
申请日：2006-05-03
申请人： Michael Goodner , Robert Meagley , Kevin O'Brien
发明人： Michael Goodner , Robert Meagley , Kevin O'Brien
IPC分类号： H01L21/465
CPC分类号： H01L21/76808 , H01L21/31144 , H01L21/76802
摘要： Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

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