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1. 发明授权

US09180570B2 Grooved CMP pad 有权
公开(公告)号：US09180570B2
公开(公告)日：2015-11-10
申请号：US12381709
申请日：2009-03-16
申请人： Robert Kerprich , Karey Holland , Diane Scott , Sudhanshu Misra
发明人： Robert Kerprich , Karey Holland , Diane Scott , Sudhanshu Misra
IPC分类号： B24B37/00 , B24B37/26
CPC分类号： B24B37/26
摘要： CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.

2. 发明申请

US20090311955A1 Grooved CMP pad 有权
标题翻译：凹槽CMP垫
公开(公告)号：US20090311955A1
公开(公告)日：2009-12-17
申请号：US12381709
申请日：2009-03-16
申请人： Robert Kerprich , Karey Holland , Diane Scott , Sudhanshu Misra
发明人： Robert Kerprich , Karey Holland , Diane Scott , Sudhanshu Misra
IPC分类号： B24D7/18
CPC分类号： B24B37/26
摘要： CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
摘要翻译：描述具有新颖凹槽结构的CMP垫。例如，这里描述的是包括主槽，辅助凹槽，凹槽图案中心和可选的端子槽的CMP垫。 CMP垫可以由聚氨酯或聚（尿烷 - 尿素）制成，并且其中产生的凹槽可以通过由成型，激光书写，水射流切割，3D印刷，热成型，真空成型，微接触印刷，热冲压及其混合物。

3. 发明授权

US09375823B2 Grooved CMP pads 有权
标题翻译：沟槽CMP垫
公开(公告)号：US09375823B2
公开(公告)日：2016-06-28
申请号：US14874179
申请日：2015-10-02
申请人： Robert Kerprich , Karey Holland , Diane Scott , Sudhanshu Misra
发明人： Robert Kerprich , Karey Holland , Diane Scott , Sudhanshu Misra
IPC分类号： B24B37/26
CPC分类号： B24B37/26
摘要： CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
摘要翻译：描述具有新颖凹槽结构的CMP垫。例如，这里描述的是包括主槽，辅助凹槽，凹槽图案中心和可选的端子槽的CMP垫。 CMP垫可以由聚氨酯或聚（尿烷 - 尿素）制成，并且其中产生的凹槽可以通过由成型，激光书写，水射流切割，3D印刷，热成型，真空成型，微接触印刷，热冲压及其混合物。

4. 发明申请

US20160023321A1 GROOVED CMP PADS 有权
公开(公告)号：US20160023321A1
公开(公告)日：2016-01-28
申请号：US14874179
申请日：2015-10-02
申请人： Robert Kerprich , Karey Holland , Diane Scott , Sudhanshu Misra
发明人： Robert Kerprich , Karey Holland , Diane Scott , Sudhanshu Misra
IPC分类号： B24B37/26
CPC分类号： B24B37/26
摘要： CMP pads having novel groove configurations are described. For example, described herein are CMP pads comprising primary grooves, secondary grooves, a groove pattern center, and an optional terminal groove. The CMP pads may be made from polyurethane or poly (urethane-urea), and the grooves produced therein may be made by a method from the group consisting of molding, laser writing, water jet cutting, 3-D printing, thermoforming, vacuum forming, micro-contact printing, hot stamping, and mixtures thereof.
摘要翻译：描述具有新颖凹槽结构的CMP垫。例如，这里描述的是包括主槽，辅助凹槽，凹槽图案中心和可选的端子槽的CMP垫。 CMP垫可以由聚氨酯或聚（尿烷 - 脲）制成，并且其中产生的凹槽可以通过由成型，激光书写，水射流切割，3D印刷，热成型，真空成型，微接触印刷，热冲压及其混合物。

5. 发明授权

US06261158B1 Multi-step chemical mechanical polishing 有权
标题翻译：多步化学机械抛光
公开(公告)号：US06261158B1
公开(公告)日：2001-07-17
申请号：US09212929
申请日：1998-12-16
申请人： Karey Holland , Ajoy Zutshi , Fen Dai , Yehiel Gotkis , C. Jerry Yang , Dennis Schey , Fred Mitchel , Lin Yang
发明人： Karey Holland , Ajoy Zutshi , Fen Dai , Yehiel Gotkis , C. Jerry Yang , Dennis Schey , Fred Mitchel , Lin Yang
IPC分类号： B24B100
CPC分类号： B24B37/04 , H01L21/3212 , H01L21/7684
摘要： A multi-step CMP system is used to polish a wafer to form metal interconnects in a dielectric layer upon which barrier and metal layers have been formed. A first polish removes an upper portion of the metal layer using a first slurry and a first set of polishing parameters, leaving residual metal within the dielectric layer to serve as the metal interconnects. A second polish of the wafer on the same platen and polishing pad removes portions of the barrier layer using a second slurry under a second set of polishing parameters. The second polish clears the barrier layer from the upper surface of the dielectric layer, thereby forming the metal interconnect. To reduce dishing and dielectric erosion, the second slurry is selected so that the barrier layer is removed at a faster rate than the residual metal within the dielectric layer. A cleaning step may be optionally performed between the first and second polishes. Further, the first polish may include a soft landing step to further reduce dishing and dielectric erosion. Alternatively, the first polish may be used to remove portions of the metal and barrier layers, leaving residual metal in the dielectric layer to serve as the metal interconnect. A second polish using a dielectric slurry is then performed to reduce microscratches.
摘要翻译：使用多步CMP系统来抛光晶片以在形成有阻挡层和金属层的电介质层中形成金属互连。第一抛光剂使用第一浆料和第一组抛光参数去除金属层的上部，留下介电层内的残余金属用作金属互连。在同一压板和抛光垫上的晶片的第二次抛光在第二组抛光参数下使用第二浆料去除部分阻挡层。第二抛光从电介质层的上表面清除阻挡层，从而形成金属互连。为了减少凹陷和电介质侵蚀，选择第二浆料，使得以比介电层内的残余金属更快的速率去除阻挡层。可以可选地在第一和第二抛光剂之间执行清洁步骤。此外，第一抛光剂可以包括软着陆步骤以进一步减少凹陷和电介质侵蚀。或者，可以使用第一抛光剂去除金属和阻挡层的部分，在电介质层中留下残余金属用作金属互连。然后使用电介质浆料进行第二次抛光，以减少微细纹。

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