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    • 4. 发明授权
    • System and method for controlling power states of a memory device via detection of a chip select signal
    • 用于通过芯片选择信号的检测来控制存储器件的电源状态的系统和方法
    • US06618791B1
    • 2003-09-09
    • US09677138
    • 2000-09-29
    • James M. DoddMichael W. Williams
    • James M. DoddMichael W. Williams
    • G06F1200
    • G11C5/143G06F1/3225G06F1/3275Y02D10/14Y02D50/20
    • A memory system and a method for controlling power states of a memory device, or a portion thereof, are provided. The memory system includes memory devices, such as DRAMs, a memory controller, chip select lines, and logic for detecting chip select signals from the chip select lines. Each memory device, or a portion therein, is connected to the memory controller by a chip select line. Each chip select line allows the transmission of a chip select signal to a corresponding memory device, or a corresponding portion of the memory device, to select the corresponding memory device, or a portion thereof, to receive commands. Logic is provided to detect the chip select signal. When the logic detects a chip select signal provided to a corresponding memory device, or a portion thereof, that is in a power state lower than its idle state, the memory device, or a portion thereof, is automatically moved from the lower power state to a higher power state.
    • 提供了一种用于控制存储器件或其一部分的电源状态的存储器系统和方法。 存储器系统包括诸如DRAM的存储器件,存储器控制器,芯片选择线以及用于检测来自芯片选择线的芯片选择信号的逻辑。 每个存储器件或其中的部分通过芯片选择线连接到存储器控制器。 每个芯片选择线允许将芯片选择信号传输到对应的存储器件或存储器件的相应部分,以选择相应的存储器件或其一部分来接收命令。 提供逻辑来检测芯片选择信号。 当逻辑检测到提供给处于低于其空闲状态的功率状态的相应存储器件或其一部分的芯片选择信号时,存储器件或其一部分自动从较低功率状态移动到 更高的功率状态。
    • 5. 发明授权
    • System and method for controlling data flow direction in a memory system
    • 用于控制存储系统中数据流方向的系统和方法
    • US06862653B1
    • 2005-03-01
    • US09664516
    • 2000-09-18
    • James M. DoddMichael W. Williams
    • James M. DoddMichael W. Williams
    • G06F12/00G06F13/16
    • G06F13/1673
    • A system and method for controlling the direction of data flow in a memory system is provided. The system comprising memory devices, a memory controller, a buffering structure, and a data flow director. The memory controller sends data, such as read-data, write-data, address information and command information, to the memory devices and receives data from the memory devices. The buffering structure interconnects the memory device and the memory controller. The buffering structure is adapted to operate in a bi-directional manner for the direction of data flow therethrough. The data flow director, which may reside in the buffering structure, the memory controller, the memory devices, or an external device, controls the direction of data flow through the buffering structure based on the data transmitted from the memory controller or the memory device.
    • 提供了一种用于控制存储器系统中的数据流的方向的系统和方法。 该系统包括存储器件,存储器控制器,缓冲结构和数据流导向器。 存储器控制器将诸如读取数据,写入数据,地址信息和命令信息的数据发送到存储器件并从存储器件接收数据。 缓冲结构将存储器件和存储器控制器互连。 缓冲结构适于以双向方式操作数据流动的方向。 可以驻留在缓冲结构中的数据流导向器,存储器控制器,存储器件或外部设备基于从存储器控制器或存储器件发送的数据来控制通过缓冲结构的数据流的方向。
    • 7. 发明授权
    • System and method for providing concurrent row and column commands
    • 提供并发行和列命令的系统和方法
    • US06553449B1
    • 2003-04-22
    • US09675348
    • 2000-09-29
    • James M. DoddMichael W. Williams
    • James M. DoddMichael W. Williams
    • G06F1200
    • G06F13/1684Y02D10/14
    • A system and method for providing concurrent column and row operations in a memory system is provided. The memory system includes a memory controller, a plurality of memory devices, and communication paths between the memory controller and the plurality of memory devices. The memory controller is coupled to each memory device through a communication path that provides a column chip select signal to the memory device and a communication path that provides a row chip select signal to the memory device. The dual chip select signals allow a column operation to be carried out in the memory device simultaneously with a row operation in the memory device. The communication paths further include a column command communication path that provides column commands to the memory devices, a column address communication path that provides column addresses for the column commands to the memory devices, a row command communication path that provides row commands to the memory devices, and a row address communication path that provides row addresses for the row commands to the memory device.
    • 提供了一种用于在存储器系统中提供并行列和行操作的系统和方法。 存储器系统包括存储器控制器,多个存储器件以及存储器控制器和多个存储器件之间的通信路径。 存储器控制器通过将存储器件提供列选择信号的通信路径和向存储器件提供行片选信号的通信路径耦合到每个存储器件。 双芯片选择信号允许在存储设备中与行操作同时执行列操作。 通信路径还包括向存储器件提供列命令的列命令通信路径,向存储器件提供列命令的列地址的列地址通信路径,向存储器件提供行命令的行命令通信路径 以及行地址通信路径,其向行存储器设备提供行命令的行地址。
    • 9. 发明授权
    • Weighted throttling mechanism with rank based throttling for a memory system
    • 用于内存系统的基于级别的节流的加权节流机制
    • US06507530B1
    • 2003-01-14
    • US09967642
    • 2001-09-28
    • Michael W. WilliamsJames M. DoddLloyd L Pollard, IINitin B Gupte
    • Michael W. WilliamsJames M. DoddLloyd L Pollard, IINitin B Gupte
    • G11C700
    • G11C11/4078G11C7/04
    • A memory system includes a plurality of memory device ranks. A memory controller having a connection with the plurality of memory device ranks is adapted to obtain command information being issued to one of the plurality of memory device ranks. The memory controller is also adapted to generate a power weight value based on a command type from the command information. The memory controller increments a power count of the one of the plurality of memory device ranks by the power weight value generated. The memory controller then compares the power count of the one of the plurality of memory device ranks to a threshold value set for the one of the plurality of memory device ranks. If it is determined that the power count exceeds the threshold value, the memory controller is adapted to throttle the one of the plurality of memory device ranks.
    • 存储器系统包括多个存储器件等级。 具有与多个存储器装置等级的连接的存储器控​​制器适于获得被发布到多个存储器件等级之一的命令信息。 存储器控制器还适于基于来自命令信息的命令类型来生成功率权重值。 存储器控制器通过生成的功率权重值来增加多个存储器件等级中的一个的功率计数。 存储器控制器然后将多个存储器件等级中的一个的功率计数与为多个存储器件等级中的一个设置的阈值进行比较。 如果确定功率计数超过阈值,则存储器控制器适于调节多个存储器件等级中的一个。