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1. 发明申请

US20050084998A1 Methods and systems for providing MEMS devices with a top cap and upper sense plate 有权
标题翻译：用于向MEMS器件提供顶盖和上感测板的方法和系统
公开(公告)号：US20050084998A1
公开(公告)日：2005-04-21
申请号：US10689801
申请日：2003-10-21
申请人： Robert Horning , Jeffrey Ridley
发明人： Robert Horning , Jeffrey Ridley
IPC分类号： B81B7/00 , B81C1/00 , H01L21/00
CPC分类号： B81B7/007 , B81B2201/0242 , B81C2203/0118
摘要： A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.
摘要翻译：描述了一种用于制造具有顶盖和上感测板的MEMS器件的方法。该方法包括制造包括蚀刻的衬底，蚀刻的MEMS器件部件和互连金属的器件晶片，互连金属的一部分是接合焊盘，并将金属环绕层添加到前侧的边缘和一部分的器件晶片。该方法还包括制造包括蚀刻衬底和互连金属的上晶片，结合器件晶片和上晶片，以及将结合的上晶片和器件晶片切割成单个MEMS器件。

2. 发明申请

US20060110854A1 Methods and systems for providing MEMS devices with a top cap and upper sense plate 有权
公开(公告)号：US20060110854A1
公开(公告)日：2006-05-25
申请号：US11323233
申请日：2005-12-30
申请人： Robert Horning , Jeffrey Ridley
发明人： Robert Horning , Jeffrey Ridley
IPC分类号： H01L21/48 , H01L21/30
CPC分类号： B81B7/007 , B81B2201/0242 , B81C2203/0118
摘要： A method for fabricating a MEMS device having a top cap and an upper sense plate is described. The method includes producing a device wafer including an etched substrate, etched MEMS device components, and interconnect metal, a portion of the interconnect metal being bond pads and adding a metal wraparound layer to a back side, edges, and a portion of a front side of the device wafer. The method also includes producing an upper wafer including an etched substrate and interconnect metal, bonding the device wafer and the upper wafer, and dicing the bonded upper wafer and device wafer into individual MEMS devices.

3. 发明申请

US20080017944A1 INTEGRAL TOPSIDE VACUUM PACKAGE 有权
标题翻译：整体吸顶真空包装
公开(公告)号：US20080017944A1
公开(公告)日：2008-01-24
申请号：US11832473
申请日：2007-08-01
申请人： Robert Higashi , Karen Newstrom-Peitso , Jeffrey Ridley
发明人： Robert Higashi , Karen Newstrom-Peitso , Jeffrey Ridley
IPC分类号： H01L31/0203
CPC分类号： G01J5/20 , H01L27/14618 , H01L27/14625 , H01L27/14649 , H01L27/16 , H01L31/0203 , H01L31/02162 , H01L2924/0002 , Y10T428/24355 , H01L2924/00
摘要： An integrated vacuum package having an added volume on a perimeter within the perimeter of a bonding seal between two wafers. The added volume of space may be an etching of material from the inside surface of the top wafer. This wafer may have vent holes that may be sealed to maintain a vacuum within the volume between the two wafers after the pump out of gas and air. The inside surface of the top wafer may have an anti-reflective pattern. Also, an anti-reflective pattern may be on the outside surface of the top wafer. The seal between the two wafers may be ring-like and have a spacer material. Also, it may have a malleable material such as solder to compensate for any flatness variation between the two facing surfaces of the wafers.
摘要翻译：在两片晶片之间的接合密封的周边周边上具有相加体积的集成真空包装。增加的空间体积可以是从顶部晶片的内表面蚀刻材料。该晶片可以具有通气孔，其可以在泵离开气体和空气之后被密封以将真空保持在两个晶片之间的体积内。顶部晶片的内表面可以具有抗反射图案。此外，抗反射图案可以在顶部晶片的外表面上。两个晶片之间的密封可以是环状的并且具有间隔物材料。此外，它可以具有可延展的材料，例如焊料，以补偿晶片的两个相对表面之间的任何平坦度变化。

4. 发明授权

US08644836B2 IP phone routing and call initiation based on location information 有权
标题翻译：基于位置信息的IP电话路由和呼叫发起
公开(公告)号：US08644836B2
公开(公告)日：2014-02-04
申请号：US11890304
申请日：2007-08-03
申请人： Jeffrey Ridley , Pascal Crausaz , Edwin Basart
发明人： Jeffrey Ridley , Pascal Crausaz , Edwin Basart
IPC分类号： H04W40/00
CPC分类号： H04L65/1069 , H04L67/18 , H04W4/02 , H04W4/20
摘要： Routing an incoming call for an IP phone system is disclosed. A location data for a mobile device is received. A way point based at least in part on the location data is determined. A state for a user of the IP phone system is determined based at least in part on the way point. An incoming call is routed to the IP phone system based at least in part on the state.
摘要翻译：披露了IP电话系统的来电呼叫。接收移动设备的位置数据。确定至少部分地基于位置数据的路点。至少部分地基于路线确定IP电话系统的用户的状态。至少部分基于状态将来电呼叫路由到IP电话系统。

5. 发明申请

US20090247188A1 IP phone routing and call initiation based on location information 有权
标题翻译：基于位置信息的IP电话路由和呼叫发起
公开(公告)号：US20090247188A1
公开(公告)日：2009-10-01
申请号：US11890304
申请日：2007-08-03
申请人： Jeffrey Ridley , Pascal Crausaz , Edwin Basart
发明人： Jeffrey Ridley , Pascal Crausaz , Edwin Basart
IPC分类号： H04Q7/20
CPC分类号： H04L65/1069 , H04L67/18 , H04W4/02 , H04W4/20
摘要： Routing an incoming call for an IP phone system is disclosed. A location data for a mobile device is received. A way point based at least in part on the location data is determined. A state for a user of the IP phone system is determined based at least in part on the way point. An incoming call is routed to the IP phone system based at least in part on the state.
摘要翻译：披露了IP电话系统的来电呼叫。接收移动设备的位置数据。确定至少部分地基于位置数据的路点。至少部分地基于路线确定IP电话系统的用户的状态。至少部分基于状态将来电呼叫路由到IP电话系统。

6. 发明申请

US20060113644A1 METHOD FOR REDUCING HARMONIC DISTORTION IN COMB DRIVE DEVICES 有权
标题翻译：减少混合动力装置中谐波失真的方法
公开(公告)号：US20060113644A1
公开(公告)日：2006-06-01
申请号：US11275575
申请日：2006-01-17
申请人： Jeffrey Ridley , James Neus
发明人： Jeffrey Ridley , James Neus
IPC分类号： H01L23/495
CPC分类号： B81C1/00698 , B81B2201/0271 , B81B2201/033 , B81C2201/0132
摘要： Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch-buffers, liberating and removing one or more sacrificial etch-buffers prior to wafer bonding, bonding the etched wafer substrate to an underlying support substrate, and etching away the wafer substrate. In some embodiments, the sacrificial etch-buffers are removed after bonding the wafer to the support substrate. The sacrificial etch-buffers can be provided at one or more selective regions to provide greater uniformity in etch rate during etching. A comb drive device in accordance with an illustrative embodiment can include a number of interdigitated comb fingers each having a more uniform profile along their length and/or at their ends, producing less harmonic distortion during operation.
摘要翻译：公开了使用一个或多个牺牲蚀刻缓冲器制造梳状驱动装置的方法。示例性的制造方法可以包括以下步骤：将图案蚀刻到限定一个或多个梳状驱动元件和牺牲蚀刻缓冲器的晶片衬底上，在晶片接合之前释放和去除一个或多个牺牲蚀刻缓冲器，将蚀刻的晶片衬底接合到底层支撑衬底，并蚀刻掉晶片衬底。在一些实施例中，在将晶片接合到支撑衬底之后去除牺牲蚀刻缓冲器。可以在一个或多个选择性区域处提供牺牲蚀刻缓冲器，以在蚀刻期间提供更大的蚀刻速率均匀性。根据说明性实施例的梳状驱动装置可以包括多个交叉指状梳，每个梳指在其长度和/或其端部具有更均匀的轮廓，在操作期间产生较少的谐波失真。

7. 发明申请

US20050136621A1 Method for reducing harmonic distortion in comb drive devices 失效
标题翻译：减少梳状驱动装置谐波失真的方法
公开(公告)号：US20050136621A1
公开(公告)日：2005-06-23
申请号：US10746219
申请日：2003-12-22
申请人： Jeffrey Ridley , James Neus
发明人： Jeffrey Ridley , James Neus
IPC分类号： B81B3/00 , H02N1/00 , H01L21/30
CPC分类号： B81C1/00698 , B81B2201/0271 , B81B2201/033 , B81C2201/0132
摘要： Methods of fabricating comb drive devices utilizing one or more sacrificial etch-buffers are disclosed. An illustrative fabrication method may include the steps of etching a pattern onto a wafer substrate defining one or more comb drive elements and sacrificial etch-buffers, liberating and removing one or more sacrificial etch-buffers prior to wafer bonding, bonding the etched wafer substrate to an underlying support substrate, and etching away the wafer substrate. In some embodiments, the sacrificial etch-buffers are removed after bonding the wafer to the support substrate. The sacrificial etch-buffers can be provided at one or more selective regions to provide greater uniformity in etch rate during etching. A comb drive device in accordance with an illustrative embodiment can include a number of interdigitated comb fingers each having a more uniform profile along their length and/or at their ends, producing less harmonic distortion during operation.
摘要翻译：公开了使用一个或多个牺牲蚀刻缓冲器制造梳状驱动装置的方法。示例性的制造方法可以包括以下步骤：将图案蚀刻到限定一个或多个梳状驱动元件和牺牲蚀刻缓冲器的晶片衬底上，在晶片接合之前释放和去除一个或多个牺牲蚀刻缓冲器，将蚀刻的晶片衬底接合到底层支撑衬底，并蚀刻掉晶片衬底。在一些实施例中，在将晶片接合到支撑衬底之后去除牺牲蚀刻缓冲器。可以在一个或多个选择性区域处提供牺牲蚀刻缓冲器，以在蚀刻期间提供更大的蚀刻速率均匀性。根据说明性实施例的梳状驱动装置可以包括多个交叉指状梳，每个梳指在其长度和/或其端部具有更均匀的轮廓，在操作期间产生较少的谐波失真。

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