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1. 发明申请

US20080112092A1 Method and Apparatus For Oxidizing Conductive Redeposition in TMR Sensors 有权
标题翻译：在TMR传感器中氧化导电沉积的方法和装置
公开(公告)号：US20080112092A1
公开(公告)日：2008-05-15
申请号：US11558532
申请日：2006-11-10
申请人： Robert E. Fontana , Howard G. Zolla
发明人： Robert E. Fontana , Howard G. Zolla
IPC分类号： G11B5/33
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/012 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996 , H01F41/308 , H01L43/12
摘要： A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an oxidizing agent selected from the group consisting of ozone and water vapor.
摘要翻译：公开了用于氧化TMR传感器中的导电再沉积的方法和装置。蚀刻TMR阻挡层。再沉积材料被氧化，并且使用选自臭氧和水蒸气的氧化剂使屏障愈合。

2. 发明授权

US5893981A Method of making stabilized MR sensor and flux guide joined by contiguous junction 失效
标题翻译：制造稳定的MR传感器和通过连接接头连接的助焊剂的方法
公开(公告)号：US5893981A
公开(公告)日：1999-04-13
申请号：US44358
申请日：1998-03-19
申请人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
发明人： Moris Musa Dovek , Robert E. Fontana , Richard Hsiao , Mohamad Towfik Krounbi , Hugo Alberto Emilio Santini , Virgil Simon Speriosu
IPC分类号： G01R33/09 , G03F7/00 , G11B5/31 , G11B5/39 , B44C1/22
CPC分类号： G11B5/3916 , G01R33/09 , G03F7/00 , G11B5/3903 , G11B5/3919 , G11B5/3932 , G11B5/3163
摘要： The back end of an MR sensor and a flux guide are joined by a contiguous self-aligned junction so that a predictable overlap of the flux guide on the back end of the MR sensor can be achieved for optimizing signal flux density in the MR sensor. Lead/longitudinal bias layers for the MR sensor are also joined by a contiguous self-aligned junction to the flux guide for stabilizing the flux guide. By employing a single lift off resist mask the MR sensor and the lead/longitudinal bias layers can be patterned followed by deposition of the flux guide. The flux guide is a bilayer of an insulation material layer and a flux guide material layer. The insulation material layer is sandwiched between the MR sensor and the flux guide material layer and between the lead/longitudinal bias layers and the flux guide material layer. A heat guide or combined flux guide and heat guide may be substituted for the aforementioned flux guide.
摘要翻译： MR传感器和磁通引导件的后端通过连续的自对准结连接，从而可以实现MR传感器后端的磁通引导件的可预测重叠，以优化MR传感器中的信号通量密度。用于MR传感器的引线/纵向偏置层也通过连接的自对准结连接到通量引导件，用于稳定通量引导件。通过使用单个剥离抗蚀剂掩模，MR传感器和引导/纵向偏置层可以被图案化，然后沉积助焊剂引导件。助焊剂是绝缘材料层和助焊剂引导材料层的双层。绝缘材料层被夹在MR传感器和磁通引导材料层之间以及引导/纵向偏置层与通量引导材料层之间。导热或组合的磁通引导件和导热件可以代替上述的磁通引导件。

3. 发明授权

US5539596A Integrated suspension, actuator arm and coil assembly with common structural support layer 失效
标题翻译：集成悬架，执行器臂和线圈组件，具有通用的结构支撑层
公开(公告)号：US5539596A
公开(公告)日：1996-07-23
申请号：US366282
申请日：1994-12-29
申请人： Robert E. Fontana , James W. Berberich , Michael A. Moser , Archibald C. Munce, Jr. , Oscar J. Ruiz , Clinton D. Snyder , C. E. Yeack-Scranton, deceased
发明人： Robert E. Fontana , James W. Berberich , Michael A. Moser , Archibald C. Munce, Jr. , Oscar J. Ruiz , Clinton D. Snyder , C. E. Yeack-Scranton, deceased
IPC分类号： G11B3/10 , G11B5/127 , G11B5/31 , G11B5/48 , G11B5/54 , G11B21/21 , G11B5/55
CPC分类号： G11B5/486 , G11B5/127 , G11B5/3103 , G11B5/3106 , G11B5/484 , G11B5/4873 , G11B5/54 , G11B5/5552 , Y10T29/49025 , Y10T29/49043 , Y10T29/49044
摘要： An assembly is provided which has integrated suspension and actuator arm regions. At least one actuator coil layer is located in the actuator arm region. The actuator coil layer is mounted to at least one homogeneous support layer which extends between terminal ends of the assembly for supporting all layers. A hole is provided through all layers in the actuator region at a pivot point for receiving an actuator spindle. In some embodiments of the invention, a transducer coil layer may be integrated in the suspension region and may be located in substantially a common plane with the actuator coil layer. The actuator region may be provided with a silicon base which contains integrated processing circuits which are connected to the transducer coil layer. A device may be carried by the assembly for bending the suspension region with respect to the actuator arm region. A method is provided for fabricating multiple integrated assemblies substantially entirely at the wafer level, each integrated assembly having a longitudinal recording magnetic head which has a close tolerance gap.
摘要翻译：提供了具有集成的悬架和致动器臂区域的组件。至少一个致动器线圈层位于致动器臂区域中。致动器线圈层安装到至少一个均匀的支撑层，该支撑层在组件的终端之间延伸以支撑所有层。在致动器区域中的枢转点处的所有层提供孔，用于接收致动器心轴。在本发明的一些实施例中，换能器线圈层可以集成在悬挂区域中，并且可以位于与致动器线圈层基本上共同的平面内。致动器区域可以设置有包含连接到换能器线圈层的集成处理电路的硅基底。装置可以由组件承载，用于相对于致动器臂区域弯曲悬挂区域。提供了一种基本上完全在晶片级制造多个集成组件的方法，每个集成组件具有具有紧密公差间隙的纵向记录磁头。

4. 发明申请

US20080205116A1 THREE-DIMENSIONAL MAGNETIC MEMORY 有权
标题翻译：三维磁记忆
公开(公告)号：US20080205116A1
公开(公告)日：2008-08-28
申请号：US12116111
申请日：2008-05-06
申请人： Robert E. Fontana , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
发明人： Robert E. Fontana , Andreas Moser , Hal J. Rosen , Bruce D. Terris , Ching Hwa Tsang
IPC分类号： G11C11/15 , H01L21/00
CPC分类号： G11C11/14 , G11C5/02 , G11C19/0808
摘要： Magnetic memories and methods are disclosed. A magnetic memory as described herein includes a plurality of stacked data storage layers to form a three-dimensional magnetic memory. Bits may be written to a data storage layer in the form of magnetic domains. The bits can then be transferred between the stacked data storage layers by heating a neighboring data storage layer, which allows the magnetic fields from the magnetic domains to imprint the magnetic domains in the neighboring data storage layer. By imprinting the magnetic domains into the neighboring data storage layer, the bits are copied from one data storage layer to another.
摘要翻译：公开了磁存储器和方法。如本文所述的磁存储器包括多个堆叠的数据存储层以形成三维磁存储器。位可以以磁畴的形式写入数据存储层。然后可以通过加热相邻数据存储层在堆叠的数据存储层之间传送这些位，这允许来自磁畴的磁场将磁畴压印在相邻的数据存储层中。通过将磁畴印刷到相邻数据存储层中，将这些位从一个数据存储层复制到另一个。

5. 发明申请

US20080088982A1 EMR SENSOR AND TRANSISTOR FORMED ON THE SAME SUBSTRATE 有权
标题翻译： EMR传感器和晶体管在相同的基板上形成
公开(公告)号：US20080088982A1
公开(公告)日：2008-04-17
申请号：US11549879
申请日：2006-10-16
申请人： Liesl Folks , Robert E. Fontana , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
发明人： Liesl Folks , Robert E. Fontana , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译：公开了磁感测芯片和制造磁感测芯片的方法。如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

6. 发明授权

US06949200B2 Planar magnetic head and fabrication method therefor 失效
标题翻译：平面磁头及其制造方法
公开(公告)号：US06949200B2
公开(公告)日：2005-09-27
申请号：US10610971
申请日：2003-06-30
申请人： Robert E. Fontana , Richard Hsiao , Yuexing Zhao
发明人： Robert E. Fontana , Richard Hsiao , Yuexing Zhao
IPC分类号： G11B5/31 , G11B5/33 , G11B5/17
CPC分类号： G11B5/3116 , G11B5/3103 , G11B5/313 , G11B5/3163 , G11B5/332 , Y10T29/49032
摘要： The magnetic head of the present invention, includes a second magnetic pole (P2 pole) that is fabricated upon a write gap layer that is deposited upon a flat surface. To achieve the flat surface, a P1 pole pedestal is formed upon the P1 pole layer with a sufficient thickness that the induction coil structure can be fabricated beneath the write gap layer. In the preferred embodiment, an etch stop layer is formed upon the P1 pole layer and an ion etching process is utilized to form the induction coil trenches in an etchable material that is deposited upon the etch stop layer. Following the fabrication of the induction coil structure a CMP process is conducted to obtain a polished flat surface upon which to deposit the write gap layer, and the P2 pole is then fabricated upon the flat write gap layer.The magnetic head of the present invention can be reliably fabricated with a more narrow P2 pole tip base width, such that data tracks written by the magnetic head are likewise narrower. A hard disk drive including the magnetic head of the present invention therefore possesses narrower written data tracks, such that the areal data storage density of the hard disk drive is increased.
摘要翻译：本发明的磁头包括在沉积在平坦表面上的写间隙层上制造的第二磁极（P 2极）。为了实现平坦表面，P 1极基座形成在P 1极层上，具有足够的厚度，使感应线圈结构可以在写间隙层下方制造。在优选实施例中，在P 1极层上形成蚀刻停止层，并且使用离子蚀刻工艺在沉积在蚀刻停止层上的可蚀刻材料中形成感应线圈沟槽。在制造感应线圈结构之后，进行CMP工艺以获得抛光的平坦表面，在其上沉积写间隙层，然后在平面写间隙层上制造P 2极。本发明的磁头可以可靠地制造成具有更窄的P 2极尖基座宽度，使得由磁头写入的数据轨道同样较窄。因此，包括本发明的磁头的硬盘驱动器具有较窄的写入数据磁道，使得硬盘驱动器的面积数据存储密度增加。

7. 发明授权

US5560097A Method of making a integrated transducer-suspension assembly for vertical recording 失效
标题翻译：制造用于垂直记录的集成换能器 - 悬挂组件的方法
公开(公告)号：US5560097A
公开(公告)日：1996-10-01
申请号：US405656
申请日：1995-03-17
申请人： Christopher H. Bajhorek , Robert E. Fontana , Clint D. Snyder , David A. Thompson , Mason L. Williams , Celia E. Yeack-Scranton
发明人： Christopher H. Bajhorek , Robert E. Fontana , Clint D. Snyder , David A. Thompson , Mason L. Williams , Celia E. Yeack-Scranton
IPC分类号： G11B5/10 , G11B5/127 , G11B5/255 , G11B5/31 , G11B5/39 , G11B5/48 , G11B5/49 , G11B17/32 , G11B5/42
CPC分类号： G11B5/3925 , G11B17/32 , G11B5/10 , G11B5/1272 , G11B5/1278 , G11B5/255 , G11B5/3106 , G11B5/313 , G11B5/3183 , G11B5/3967 , G11B5/484 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： An integral combination magnetic transducer and suspension assembly suitable for use in both contact recording and in winchester-type applications. A generally rectangular elongated flat suspension member includes a vertical-type inductive read/write transducer formed integrally with the suspension member and is embedded in one end of the suspension member. The vertical inductive transducer is suitable for vertical recording applications. The transducer vertical magnetic pole tip and magnetic yoke structure are formed at one end of the suspension member with the vertical pole tip extending to and exposed at an air bearing surface formed on the lower surface of a slider-shaped protrusion extending from the lower surface of the end of the suspension member. The integral transducer/suspension assembly can be adapted for either flying above the recording media or for use in continuous contact with the recording media. The air bearing surface is formed on the lower surface of a wear pad. The fabrication of the transducer/suspension assembly is adapted to be performed at the wafer level.
摘要翻译：适用于接触记录和温切斯特型应用的整体组合磁传感器和悬架组件。大致矩形的细长扁平悬挂构件包括与悬挂构件一体形成并嵌入在悬挂构件的一端中的垂直型感应读/写换能器。垂直感应传感器适用于垂直记录应用。传感器垂直磁极尖端和磁轭结构形成在悬挂构件的一端，垂直极尖延伸并形成在从下表面延伸的滑块形突起的下表面上的空气轴承表面处并暴露在其中悬挂构件的端部。集成的传感器/悬架组件可适用于在记录介质上方飞行或用于与记录介质的连续接触。空气轴承表面形成在耐磨垫的下表面上。传感器/悬架组件的制造适于在晶片级执行。

8. 发明授权

US5935453A MR sensor having end regions with planar sides 失效
标题翻译： MR传感器具有平面侧面的端部区域
公开(公告)号：US5935453A
公开(公告)日：1999-08-10
申请号：US893027
申请日：1997-07-15
申请人： Robert E. Fontana , Tsann Lin , Neil Leslie Robertson , Ching Hwa Tsang
发明人： Robert E. Fontana , Tsann Lin , Neil Leslie Robertson , Ching Hwa Tsang
IPC分类号： G01R33/04 , G11B5/31 , G11B5/39 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/045 , G11B5/3903 , G11B5/3932 , G11B2005/3996 , G11B5/3163 , G11B5/398
摘要： A magnetoresistive (MR) sensor having passive end regions separated by a central active region in which an MR sensing element is formed over substantially only the central active region. The MR sensor is defined by forming a resist pattern over both the end regions and the MR sensing element followed by an etching step where the duration of the etching is controlled by the time it takes to remove the exposed end regions' material and not by the time it takes to remove the excess MR material in the center active region. This creates an MR sensor having planar sides along the circumference of the end regions where the planar sides have no thinned edges or shoulders. The MR sensor further has no remnant MR material along the inner planar side of the end regions behind the MR sensor's trackwidth edge and adjacent to the MR sensor's back side.
摘要翻译：磁阻（MR）传感器具有被中心有源区分开的被动端区域，其中MR检测元件基本上仅在中心有源区域上形成。 MR传感器通过在两个端部区域和MR感测元件上形成抗蚀剂图案来定义，随后是蚀刻步骤，其中蚀刻的持续时间由去除暴露的端部区域的材料而不是由去除中心有效区域中多余的MR材料所需的时间。这创建了一个MR传感器，其沿着端部区域的圆周具有平面侧面，其中平面侧面没有变薄的边缘或肩部。 MR传感器在MR传感器的跟踪宽度边缘之后的MRT传感器的背面附近，沿着端部区域的内平面侧还没有剩余的MR材料。

9. 发明授权

US5802701A Method of making an integrated suspension, actuator arm and coil assembly 失效
标题翻译：制造集成悬架，执行器臂和线圈组件的方法
公开(公告)号：US5802701A
公开(公告)日：1998-09-08
申请号：US627161
申请日：1996-04-03
申请人： Robert E. Fontana , James W. Berberich , Michael Anthony Moser , Archibald Currie Munce, Jr. , Oscar J. Ruiz , Clinton David Snyder , C. E. Yeack-Scranton, deceased
发明人： Robert E. Fontana , James W. Berberich , Michael Anthony Moser , Archibald Currie Munce, Jr. , Oscar J. Ruiz , Clinton David Snyder , C. E. Yeack-Scranton, deceased
IPC分类号： G11B3/10 , G11B5/127 , G11B5/31 , G11B5/48 , G11B5/54 , G11B21/21
CPC分类号： G11B5/486 , G11B5/127 , G11B5/3103 , G11B5/3106 , G11B5/484 , G11B5/4873 , G11B5/54 , G11B5/5552 , Y10T29/49025 , Y10T29/49043 , Y10T29/49044
摘要： A method is provided for making an assembly that has an integrated suspension, actuator arm and actuator coil. At least one actuator coil layer is located in the actuator arm region. The actuator coil layer is mounted to at least one homogeneous support layer which extends between terminal ends of the assembly for supporting all layers. A hole is provided through all layers in the actuator region at a pivot point for receiving an actuator spindle. In some embodiments of the invention, a transducer coil layer may be integrated in the suspension region and may be located in substantially a common plane with the actuator coil layer. The actuator region may be provided with a silicon base which contains integrated processing circuits which are connected to the transducer coil layer. A device may be carried by the assembly for bending the suspension region with respect to the actuator arm region. A method is provided for fabricating multiple integrated assemblies substantially entirely at the wafer level, each integrated assembly having a longitudinal recording magnetic head which has a close tolerance gap.
摘要翻译：提供了一种用于制造具有集成悬架，致动器臂和致动器线圈的组件的方法。至少一个致动器线圈层位于致动器臂区域中。致动器线圈层安装到至少一个均匀的支撑层，该支撑层在组件的终端之间延伸以支撑所有层。在致动器区域中的枢转点处的所有层提供孔，用于接收致动器心轴。在本发明的一些实施例中，换能器线圈层可以集成在悬挂区域中，并且可以位于与致动器线圈层基本上共同的平面内。致动器区域可以设置有包含连接到换能器线圈层的集成处理电路的硅基底。装置可以由组件承载，用于相对于致动器臂区域弯曲悬挂区域。提供了一种基本上完全在晶片级制造多个集成组件的方法，每个集成组件具有具有紧密公差间隙的纵向记录磁头。

10. 发明授权

US5528440A Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element 失效
标题翻译：旋转阀磁阻元件具有邻近自由层的末端区域的纵向交换偏置，以及使用该元件的磁记录系统
公开(公告)号：US5528440A
公开(公告)日：1996-06-18
申请号：US280967
申请日：1994-07-26
申请人： Robert E. Fontana , Tsann Lin , Ching H. Tsang
发明人： Robert E. Fontana , Tsann Lin , Ching H. Tsang
IPC分类号： G01R33/09 , G11B5/39 , G11C11/15 , H01L43/10 , G01R33/02 , H01L43/08
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3903 , G11C11/15 , H01L43/10
摘要： An improved spin valve (SV) magnetoresistive element has its free ferromagnetic layer in the form of a central active region with defined edges and end regions that are contiguous with and abut the edges of the central active region. A layer of antiferromagnetic material, preferably a nickel-manganese (Ni--Mn) alloy, is formed on and in contact with the ferromagnetic material in the end regions for exchange coupling with the end regions to provide them with a longitudinal bias of their magnetizations. The pinned ferromagnetic layer in the SV element is pinned by exchange coupling with a different layer of antiferromagnetic material, preferably an iron-manganese (Fe--Mn) alloy. This material has a substantially different Neel temperature from that of the antiferromagnetic material on the end regions. The process for making the SV element includes heating to different predetermined temperatures in the presence of an applied magnetic field to orient the magnetizations of the free and pinned layers in the proper direction. The SV element may be used as a sensor for reading data in magnetic recording systems.
摘要翻译：改进的自旋阀（SV）磁阻元件具有其中心有源区形式的自由铁磁层，其具有与中心有源区的边缘邻接并邻接中心有源区的边缘和端部区域。一层反铁磁材料，优选镍锰（Ni-Mn）合金，形成在端部区域中的铁磁材料上并与其接触，用于与端部区域交换耦合，以使它们具有它们的磁化的纵向偏压。通过与不同的反铁磁材料层（优选铁锰（Fe-Mn））合金的交换耦合来固定SV元件中的被钉扎的铁磁层。该材料具有与末端区域上的反铁磁材料的Neel温度基本上不同的Neel温度。制造SV元件的过程包括在存在施加的磁场的情况下加热到不同的预定温度，以将自由和被钉扎层的磁化定向在适当的方向。 SV元件可以用作用于在磁记录系统中读取数据的传感器。

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