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1. 发明申请

US20180043409A1 Processing of Hollow Sections 审中-公开
公开(公告)号：US20180043409A1
公开(公告)日：2018-02-15
申请号：US15722727
申请日：2017-10-02
申请人： Robert E. Barber , Karl T. Hartwig
发明人： Robert E. Barber , Karl T. Hartwig
IPC分类号： B21C23/12 , B21C23/00
CPC分类号： B21C23/12 , B21C23/001
摘要： A system and method provide a material with uniform micro-structure. In an embodiment, an equal channel angular extrusion system includes an interior mandrel. The interior mandrel includes an expanding shear material section and a contracting shear material section. In addition, the system includes a material. The material is disposed about a portion of the interior mandrel. Moreover, the system includes a pressure application device. The pressure application device applies pressure to the material to force the material to contact the expanding shear material section to provide an expanded post-shear material section. Pressure from the pressure application device applies pressure to the material to force the expanded post-shear material section to contact the contracting shear material section to provide a contracted shear material section.

2. 发明授权

US09776232B2 Processing of hollow sections 有权
公开(公告)号：US09776232B2
公开(公告)日：2017-10-03
申请号：US13606473
申请日：2012-09-07
申请人： Karl T. Hartwig , Robert E. Barber
发明人： Karl T. Hartwig , Robert E. Barber
IPC分类号： B21C23/00 , B21C23/12
CPC分类号： B21C23/12 , B21C23/001
摘要： A system and method provide a material with uniform micro-structure. In an embodiment, an equal channel angular extrusion system includes an interior mandrel. The interior mandrel includes an expanding shear material section and a contracting shear material section. In addition, the system includes a material. The material is disposed about a portion of the interior mandrel. Moreover, the system includes a pressure application device. The pressure application device applies pressure to the material to force the material to contact the expanding shear material section to provide an expanded post-shear material section. Pressure from the pressure application device applies pressure to the material to force the expanded post-shear material section to contact the contracting shear material section to provide a contracted shear material section.

3. 发明申请

US20130239640A1 Processing of Hollow Sections 有权
标题翻译：空心加工
公开(公告)号：US20130239640A1
公开(公告)日：2013-09-19
申请号：US13606473
申请日：2012-09-07
申请人： Robert E. Barber , Karl T. Hartwig
发明人： Robert E. Barber , Karl T. Hartwig
IPC分类号： B21C23/12
CPC分类号： B21C23/12 , B21C23/001
摘要： A system and method provide a material with uniform micro-structure. In an embodiment, an equal channel angular extrusion system includes an interior mandrel. The interior mandrel includes an expanding shear material section and a contracting shear material section. In addition, the system includes a material. The material is disposed about a portion of the interior mandrel. Moreover, the system includes a pressure application device. The pressure application device applies pressure to the material to force the material to contact the expanding shear material section to provide an expanded post-shear material section. Pressure from the pressure application device applies pressure to the material to force the expanded post-shear material section to contact the contracting shear material section to provide a contracted shear material section.
摘要翻译：系统和方法提供具有均匀微结构的材料。在一个实施例中，等通道角挤压系统包括内心轴。内部心轴包括膨胀剪切材料部分和收缩剪切材料部分。另外，系统包括一个材料。该材料围绕内部心轴的一部分设置。此外，该系统包括压力施加装置。压力施加装置向材料施加压力以迫使材料接触膨胀的剪切材料部分以提供膨胀的剪切后材料部分。来自压力施加装置的压力对材料施加压力以迫使膨胀的剪切后材料部分接触收缩剪切材料部分以提供收缩的剪切材料部分。

4. 发明授权

US5616191A Method for making a high purity aluminum conductor used at ultra low temperature 失效
标题翻译：制造在超低温下使用的高纯度铝导体的方法
公开(公告)号：US5616191A
公开(公告)日：1997-04-01
申请号：US472490
申请日：1995-06-07
申请人： Akihiko Takahashi , Hitoshi Yasuda , Karl T. Hartwig , Lacy C. McDonald , Hong Zou
发明人： Akihiko Takahashi , Hitoshi Yasuda , Karl T. Hartwig , Lacy C. McDonald , Hong Zou
IPC分类号： C22B21/00 , C22C21/00 , C22F1/04 , C30B11/00 , C30B15/00 , H01B1/02 , C21D8/06 , C21D8/12
CPC分类号： H01B1/023 , C22F1/04 , C30B11/00 , C30B15/00 , C30B29/02 , Y10S428/93 , Y10S505/814 , Y10T428/12743
摘要： The aluminum conductor having increase of its electric resistivity kept small at ultra low temperature of 30.degree. K. or lower even after cyclic strain is given at ultra low temperature, by controlling the crystal structure of the high purity aluminum conductor with purity of 99.9-99.9999 wt % so as to consist of (i) a veritable single or a substantially single crystal consisting of a bundle of sub-grains which have their crystal axes in the same direction or in the directions within a couple of degrees of deviation as a whole which has a specific crystal axis of or or the crystal axes close thereto in the longitudinal direction of the aluminum conductor, or (ii) a polycrystal most of which grains have respective specific crystal axes of and/or , or the crystal axes close thereto with respect to each grain in the longitudinal direction of the aluminum conductor, and have specific grain size of 0.01 mm to 3.0 mm.
摘要翻译：即使在超低温循环应变后，通过控制纯度为99.9-99.9999的高纯度铝导体的晶体结构，其电阻率增加的铝导体也保持在30℃以下的超低温下的低温。（i）由一组亚晶粒组成的可辨别的单个或基本上单一的晶体，所述亚晶粒子团的晶体轴线在整个偏差的相同方向或两个方向上具有相同的方向具有<111>或<100>的特定晶轴或在铝导体的纵向方向上靠近其的晶轴，或（ii）其中大多数晶粒具有各自的特定晶轴<111>和/或或相对于铝导体的纵向方向上的每个晶粒接近的晶轴，并且具有0.01mm至3.0mm的特定晶粒尺寸。

5. 发明授权

US5573861A High purity aluminum conductor used at ultra low temperature 失效
标题翻译：高纯度铝导体在超低温下使用
公开(公告)号：US5573861A
公开(公告)日：1996-11-12
申请号：US88032
申请日：1993-07-06
申请人： Akihiko Takahashi , Hitoshi Yasuda , Karl T. Hartwig , Lacy C. McDonald , Hong Zou
发明人： Akihiko Takahashi , Hitoshi Yasuda , Karl T. Hartwig , Lacy C. McDonald , Hong Zou
IPC分类号： C22B21/00 , C22C21/00 , C22F1/04 , C30B11/00 , C30B15/00 , H01B1/02 , B32B7/02 , B32B15/01
CPC分类号： H01B1/023 , C22F1/04 , C30B11/00 , C30B15/00 , C30B29/02 , Y10S428/93 , Y10S505/814 , Y10T428/12743
摘要： The aluminum conductor having increase of its electric resistivity kept small at ultra low temperature of 30.degree. K. or lower even after cyclic strain is given at ultra low temperature, by controlling the crystal structure of the high purity aluminum conductor with purity of 99.9-99.9999 wt %. The crystal structure consist of (i) a veritable single or a substantially single crystal consisting of a bundle of sub-grains which have their crystal axes in the same direction or in the directions within a couple of degrees of deviation as a whole which has a specific crystal axis of or or the crystal axes close thereto in the longitudinal direction of the aluminum conductor, or (ii) a polycrystal most of which grains have respective specific crystal axes of and/or , or the crystal axes close thereto with respect to each grain in the longitudinal direction of the aluminum conductor, and have specific grain size of 0.01 mm to 3.0 mm.
摘要翻译：即使在超低温循环应变后，通过控制纯度为99.9-99.9999的高纯度铝导体的晶体结构，其电阻率增加的铝导体也保持在30℃以下的超低温下的低温。重量％。晶体结构由（i）由一个子晶粒组成的真实的单个或基本上单一的晶体组成，它们的晶轴在整个偏离的相同方向上或沿相反方向偏离的方向上具有（111）或<100>的特定晶轴或在铝导体的纵向方向上靠近其的晶轴，或（ii）其中大多数晶粒具有各自的特定晶轴<111>和/或<100的多晶体 >或相对于铝导体的纵向方向上的每个晶粒接近的晶轴，并且具有0.01mm至3.0mm的特定晶粒尺寸。

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