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1. 发明申请

US20050188923A1 Substrate carrier for parallel wafer processing reactor 审中-公开
标题翻译：用于平行晶片处理反应器的基板载体
公开(公告)号：US20050188923A1
公开(公告)日：2005-09-01
申请号：US10966245
申请日：2004-10-15
申请人： Robert Cook , Ronald Stevens , Peter Schwartz , Cesar Tejamo , Vebjorn Nilsen , Gabriel Ormonde , Ajit Paranjpe , Somnath Nag , Michael Patten
发明人： Robert Cook , Ronald Stevens , Peter Schwartz , Cesar Tejamo , Vebjorn Nilsen , Gabriel Ormonde , Ajit Paranjpe , Somnath Nag , Michael Patten
IPC分类号： C23C16/24 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/48 , C23C16/509 , C23C16/54 , H01J37/32 , H01L21/00 , H01L21/205 , H01L21/318 , H01L21/673 , H01L21/677 , C23C16/00
CPC分类号： H01L21/67303 , C23C16/4584 , C23C16/54 , H01J37/32082 , H01J37/32733 , H01J2237/2001 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/3185 , H01L21/67017 , H01L21/67069 , H01L21/67115 , H01L21/67309 , H01L21/67346 , H01L21/67383
摘要： A substrate carrier for a parallel wafer processing reactor supports a plurality of substrates. The substrate carrier includes a plurality of susceptors, which may be thermal plates or annular rings that are arranged horizontally in a vertical stack. The substrates are mounted between pairs of susceptors on two or more supports provided around the outer periphery of the susceptors. The number of substrates mounted between each pair of susceptors may the same or different but is two or more between at least one pair of susceptors.
摘要翻译：用于平行晶片处理反应器的衬底载体支撑多个衬底。衬底载体包括多个基座，其可以是在垂直堆叠中水平布置的热板或环形环。衬底被安置在两个或更多个支撑体之间的基座对之间，所述支撑件设置在基座的外周周围。安装在每对感受体之间的衬底的数量可以相同或不同，但是在至少一对感受器之间是两个或更多个。

2. 发明申请

US20120231182A1 Method and Apparatus for Treating Containers 审中-公开
标题翻译：处理容器的方法和装置
公开(公告)号：US20120231182A1
公开(公告)日：2012-09-13
申请号：US13417226
申请日：2012-03-10
申请人： Ronald Stevens , Gabriel Ormonde , James Mitchener
发明人： Ronald Stevens , Gabriel Ormonde , James Mitchener
IPC分类号： C23C16/50 , C23C16/24 , A61L2/14 , C23C16/06
CPC分类号： C23C16/045 , A61L2/14 , A61L2202/23 , C23C16/308 , C23C16/401 , C23C16/403 , C23C16/5093 , H01J37/32082 , H01J37/32394 , H01J37/32403 , H01J37/32431 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32596
摘要： An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.
摘要翻译：用于处理容器内部的装置包括用于容纳容器的室，并且经由由同轴布置的电极形成的环形空间提供前体材料，在施加电压时产生等离子体并且容器被处理。

3. 发明授权

US10081864B2 Method and apparatus for treating containers 有权
公开(公告)号：US10081864B2
公开(公告)日：2018-09-25
申请号：US13417226
申请日：2012-03-10
申请人： Ronald Stevens , Gabriel Ormonde , James Mitchener
发明人： Ronald Stevens , Gabriel Ormonde , James Mitchener
IPC分类号： C23C16/50 , C23C16/04 , A61L2/14 , C23C16/30 , C23C16/40 , C23C16/509 , H01J37/32
CPC分类号： C23C16/045 , A61L2/14 , A61L2202/23 , C23C16/308 , C23C16/401 , C23C16/403 , C23C16/5093 , H01J37/32082 , H01J37/32394 , H01J37/32403 , H01J37/32431 , H01J37/32522 , H01J37/32541 , H01J37/32568 , H01J37/32596
摘要： An apparatus for treating the interior of containers includes a chamber for holding a container and provides precursor materials via an annulus formed by coaxially arranged electrodes at which plasma is created upon application of voltage and the container is treated.

4. 发明授权

US07976631B2 Multi-gas straight channel showerhead 有权
标题翻译：多气直通花洒
公开(公告)号：US07976631B2
公开(公告)日：2011-07-12
申请号：US11873132
申请日：2007-10-16
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306 , H01L21/3065
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个分离前体气体的直通道。将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

5. 发明申请

US20110070721A1 EPITAXIAL GROWTH OF COMPOUND NITRIDE SEMICONDUCTOR STRUCTURES 审中-公开
标题翻译：化合物半导体结构的外延生长
公开(公告)号：US20110070721A1
公开(公告)日：2011-03-24
申请号：US12954133
申请日：2010-11-24
申请人： Sandeep NIJHAWAN , David Bour , Lori Washington , Jacob Smith , Ronald Stevens , David Eaglesham
发明人： Sandeep NIJHAWAN , David Bour , Lori Washington , Jacob Smith , Ronald Stevens , David Eaglesham
IPC分类号： H01L21/20
CPC分类号： C30B25/14 , C30B29/403 , C30B35/00 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67155
摘要： Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The substrate is transferred from the first processing chamber to a second processing chamber. Group-III and nitrogen precursors are flowed into the second processing chamber to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process. The first and second group-III precursors have different group-III elements.
摘要翻译：描述了用于制造复合氮化物半导体结构的装置和方法。 III族和氮气前体流入第一处理室，以通过热化学气相沉积工艺在衬底上沉积第一层。衬底从第一处理室转移到第二处理室。 III族和氮气前体流入第二处理室以通过热化学气相沉积工艺在第一层上沉积第二层。第一和第二组III前体具有不同的III族元素。

6. 发明申请

US20110121503A1 CVD APPARATUS 审中-公开
标题翻译： CVD装置
公开(公告)号：US20110121503A1
公开(公告)日：2011-05-26
申请号：US12850738
申请日：2010-08-05
申请人： BRIAN H. BURROWS , Ronald Stevens , Jacob Grayson , Joshua J. Podesta , Sandeep Nijhawan , Lori D. Washington , Alexander Tam , Sumedh Acharya
发明人： BRIAN H. BURROWS , Ronald Stevens , Jacob Grayson , Joshua J. Podesta , Sandeep Nijhawan , Lori D. Washington , Alexander Tam , Sumedh Acharya
IPC分类号： B23Q3/00
CPC分类号： H01L21/67115 , C23C16/4412 , C23C16/4584 , C23C16/481 , H01L21/68742 , H01L21/68792
摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.
摘要翻译：本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积中的处理室和组件。该装置包括限定处理量的室主体。第一平面中的喷头定义了处理量的顶部。载体板在第二平面中延伸过程体积，形成在喷头和基座板之间的上过程体积。在第三平面中的透明材料限定了处理体积的底部，其在承载板和透明材料之间形成较低的处理体积。多个灯形成位于透明材料下方的一个或多个区域。该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量的增加。

7. 发明申请

US20100215854A1 HVPE SHOWERHEAD DESIGN 审中-公开
标题翻译： HVPE淋浴设计
公开(公告)号：US20100215854A1
公开(公告)日：2010-08-26
申请号：US12776351
申请日：2010-05-07
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Jacob Grayson , Kenric T. Choi , Sumedh Acharya , Sandeep Nijhawan , Olga Kryliouk , Yuriy Melnik
IPC分类号： C23C16/455 , C23C16/00 , C23C16/08
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T117/10
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

8. 发明申请

US20080124463A1 SYSTEM AND METHOD FOR DEPOSITING A GASEOUS MIXTURE ONTO A SUBSTRATE SURFACE USING A SHOWERHEAD APPARATUS 失效
标题翻译：使用淋浴器将气体混合物沉积在基底表面上的系统和方法
公开(公告)号：US20080124463A1
公开(公告)日：2008-05-29
申请号：US11564198
申请日：2006-11-28
申请人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi O. Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
发明人： David Bour , Lori Washington , Sandeep Nijhawan , Ronald Stevens , Jacob Smith , Alexander Tam , Nyi O. Myo , Steve Park , Rosemary Twist , Garry Kwong , Jie Su
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45572 , C23C16/45574
摘要： A gaseous mixture is deposited onto a substrate surface using a showerhead. A first plenum of the showerhead has a plurality of channels fluidicly coupled with an interior of a processing chamber. A second plenum gas flows through a plurality of tubes extending from a second plenum of the showerhead through the channels into the interior of the processing chamber. The diameter of the tubes is smaller than the diameter of the channels such that a first plenum gas flows into the interior of the processing chamber through a space defined between the outer surface of the tubes and the surface of the channels. The length and diameter of the tubes determine the level of distribution and the molar ratio of the first gas and the second gas in the gaseous mixture that is deposited on the surface of the substrate.
摘要翻译：使用喷头将气体混合物沉积到基底表面上。喷头的第一增压室具有与处理室的内部流体耦合的多个通道。第二增压气体流过从喷头的第二增压室通过通道延伸到处理室内部的多个管。管的直径小于通道的直径，使得第一增压气体通过限定在管的外表面和通道表面之间的空间流入处理室的内部。管的长度和直径确定沉积在基底表面上的气态混合物中的分布水平和第一气体与第二气体的摩尔比。

9. 发明授权

US4981823A Beryllium oxide based ceramics 失效
标题翻译：氧化铍基陶瓷
公开(公告)号：US4981823A
公开(公告)日：1991-01-01
申请号：US281919
申请日：1988-12-07
申请人： Michael Crutchley , Ronald Stevens
发明人： Michael Crutchley , Ronald Stevens
IPC分类号： C04B35/08
CPC分类号： C04B35/08
摘要： A ceramic article made from a mixture comprising (on a dry weight basis) magnesium oxide (MgO) in an amount up to 2% by weight, a defined rare earth oxide in amount up to 10% by weight, balance beryllium oxide, and trace elements, the defined rare earth oxide being zirconium oxide (ZrO.sub.2), hafnium oxide (HfO.sub.2), cerium oxide (Ce.sub.2 O.sub.3), yttrium oxide (Y.sub.2 O.sub.3), ytterbium oxide (Yb.sub.2 O.sub.3) or thorium oxide (ThO.sub.2). Such ceramic articles have much improved properties in particular higher densities than attainable hitherto and better crossbreak strength and surface smoothness as fired. The ceramic compositions can also be admixed with supplementary ceramic materials such as silicon carbide to produce microwave absorbing materials.
摘要翻译：一种由混合物制成的陶瓷制品，其含有至多2重量％的（基于干重的）氧化镁（MgO），至多10重量％的定义的稀土氧化物，平衡氧化铍和痕量元素，所定义的稀土氧化物是氧化锆（ZrO 2），氧化铪（HfO 2），氧化铈（Ce 2 O 3），氧化钇（Y 2 O 3），氧化镱（Yb 2 O 3）或氧化钍（ThO 2）。这种陶瓷制品具有特别高的密度，特别是可达到的迄今为止和更好的交叉裂纹强度和烧制时的表面平滑度。陶瓷组合物也可以与补充陶瓷材料如碳化硅混合以产生微波吸收材料。

10. 发明申请

US20120024388A1 MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD 有权
标题翻译：多通道直通通道
公开(公告)号：US20120024388A1
公开(公告)日：2012-02-02
申请号：US13181431
申请日：2011-07-12
申请人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
发明人： Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
IPC分类号： F16L37/56
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个直接通道，其分离前体气体。将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

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