会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明申请
    • SPUTTER DEPOSITION METHOD AND SYSTEM FOR FABRICATING THIN FILM CAPACITORS WITH OPTICALLY TRANSPARENT SMOOTH SURFACE METAL OXIDE STANDOFF LAYER
    • 具有透明透明平面表面金属氧化物层状薄膜的薄膜电容器的溅射沉积方法和系统
    • US20100200393A1
    • 2010-08-12
    • US12703113
    • 2010-02-09
    • Robert ChowAlan Ellis
    • Robert ChowAlan Ellis
    • C23C14/35C23C14/34
    • C23C14/0042C23C14/083C23C14/548
    • A sputter deposition method and system for producing a metal oxide film, especially a dielectric standoff layer of a thin film/nanolayer capacitor. A noble gas, such as argon, is used to sputter metal ions from a metal target, such as niobium, in the presence of a partial pressure of oxygen in a vacuum chamber. And an oxygen-to-noble gas flow ratio entering the vacuum chamber is controlled by a flow controller to be within an operating range defined between a predetermined lower limit (such as 30% O2/Ar for niobium oxide) associated with a minimum transparency/stoichiometric threshold and a predetermined upper limit (such as 80% O2/Ar for niobium oxide) associated with a maximum roughness/porosity threshold, so that a reaction between the sputtered metal ions and the oxygen produces a substantially transparent metal oxide film with a substantially smooth non-porous surface.
    • 用于制造金属氧化物膜,特别是薄膜/纳米层电容器的介电隔离层的溅射沉积方法和系统。 在真空室中存在氧分压的情况下,使用诸如氩的惰性气体从金属靶(例如铌)溅射金属离子。 并且通过流量控制器控制进入真空室的氧气到惰性气体流量比在与最小透明度/最小值相关联的预定下限(例如,氧化铌的30%O 2 / Ar)之间限定的工作范围内, 化学计量阈值和与最大粗糙度/孔隙度阈值相关联的预定上限(例如,氧化铌的80%O 2 / Ar),使得溅射的金属离子和氧之间的反应产生基本上透明的金属氧化物膜, 光滑无孔表面。