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    • 7. 发明申请
    • MONOLITHIC CMOS-MEMS MICROPHONES AND METHOD OF MANUFACTURING
    • 单片CMOS-MEMS微波阵列及其制造方法
    • US20160090303A1
    • 2016-03-31
    • US14888606
    • 2014-05-02
    • Robert Bosch GmbH
    • John ZinnBrett DiamondJochen Hoffmann
    • B81C1/00H04R31/00
    • B81C1/00246B81B2201/0257B81C2201/0132H04R31/00H04R31/003H04R2201/003
    • Systems and methods are disclosed for manufacturing a CMOS-MEMS device (100). A partial protective layer (401) is deposited on a top surface of a layered structure to cover a circuit region. A first partial etch is performed from the bottom side of the layered structure to form a first gap (501) below a MEMS membrane (207) within a MEMS region of the layered structure. A second partial etch is performed from the top side of the layered structure to remove a portion of a sacrificial layer between the MEMS membrane and a MEMS backplate (215) within the MEMS region. The second partial etch releases the MEMS membrane so that it can move in response to pressures. The deposited partial protective layer prevents the second partial etch from etching a portion of the sacrificial layer positioned within the circuit region of the layered structure and also prevents the second partial etch from damaging the CMOS circuit component (211).
    • 公开了用于制造CMOS-MEMS器件(100)的系统和方法。 部分保护层(401)沉积在层状结构的顶表面上以覆盖电路区域。 从分层结构的底侧执行第一部分蚀刻,以在分层结构的MEMS区域内的MEMS膜(207)下方形成第一间隙(501)。 从分层结构的顶侧执行第二部分蚀刻以去除MEMS区域内的MEMS膜与MEMS背板(215)之间的牺牲层的一部分。 第二部分蚀刻释放MEMS膜,使得其可以响应于压力移动。 沉积的部分保护层防止第二部分蚀刻蚀刻位于层状结构的电路区域内的牺牲层的一部分,并且还防止第二部分蚀刻损坏CMOS电路部件(211)。