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    • 8. 发明授权
    • Wafer with recessed plug
    • 带嵌入式插头的晶圆
    • US08890283B2
    • 2014-11-18
    • US14173383
    • 2014-02-05
    • Robert Bosch GmbH
    • Andrew B. GrahamGary YamaGary O'Brien
    • H01L29/00H01L21/762B81B7/00B81C1/00
    • B81B7/00B81B2203/0307B81C1/00126H01L21/76283
    • In one embodiment, a method of forming a plug includes providing a base layer, providing an intermediate oxide layer above an upper surface of the base layer, providing an upper layer above an upper surface of the intermediate oxide layer, etching a trench including a first trench portion extending through the upper layer, a second trench portion extending through the oxide layer, and a third trench portion extending into the base layer, depositing a first material portion within the third trench portion, depositing a second material portion within the second trench portion, and depositing a third material portion within the first trench portion.
    • 在一个实施例中,形成插头的方法包括提供基底层,在基底层的上表面上方提供中间氧化物层,在中间氧化物层的上表面上方提供上层,蚀刻包括第一 延伸穿过上层的沟槽部分,延伸穿过氧化物层的第二沟槽部分和延伸到基层中的第三沟槽部分,在第三沟槽部分内沉积第一材料部分,在第二沟槽部分内沉积第二材料部分 并且在第一沟槽部分内沉积第三材料部分。
    • 9. 发明申请
    • Out-of-Plane Spacer Defined Electrode
    • 平面间隔定子电极
    • US20140197713A1
    • 2014-07-17
    • US14217956
    • 2014-03-18
    • Robert Bosch GmbH
    • Andrew B. GrahamGary YamaGary O'Brien
    • B81B3/00
    • B81B3/0021B81B2207/095B81C1/00301
    • In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.
    • 在一个实施例中,形成平面外电极的方法包括在器件层的上表面上方提供氧化物层,在氧化物层的上表面上方提供第一覆盖层部分,蚀刻第一电极周界, 沟槽延伸穿过第一盖层部分并在氧化物层处停止,在第一电极周界限定沟槽内沉积第一材料部分,在第一材料部分上方沉积第二盖层部分,释放氧化物层的一部分的蒸气,沉积 在所述第二盖层部分上方的第三盖层部分,蚀刻延伸穿过所述第二盖层部分和所述第三盖层部分的第二电极周界限定沟槽,以及在所述第二电极周界限定沟槽内沉积第二材料部分, 包括第一材料部分和第二材料部分的间隔件限定了平面外的电极。