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1. 发明授权

US5304825A Linear heterojunction field effect transistor 失效
标题翻译：线性异质结场效应晶体管
公开(公告)号：US5304825A
公开(公告)日：1994-04-19
申请号：US932526
申请日：1992-08-20
申请人： Rimantas L. Vaitkus , Saied N. Tehrani , Vijay K. Nair , Herbert Goronkin
发明人： Rimantas L. Vaitkus , Saied N. Tehrani , Vijay K. Nair , Herbert Goronkin
IPC分类号： H01L29/812 , H01L21/338 , H01L29/08 , H01L29/10 , H01L29/778 , H01L29/80 , H01L31/072 , H01L31/0328 , H01L31/0336 , H01L31/109
CPC分类号： H01L29/7783 , H01L29/0891 , H01L29/1029 , Y10S148/072
摘要： A low power heterojunction field effect transistor (10, 30, 50, 60) capable of operating at low drain currents while having a low intermodulation distortion. A channel restriction region (9, 38, 51) is formed between the gate electrodes (24, 41, 69) and the drain electrodes (25, 46, 65). The channel restriction region (9, 38, 51) depletes the channel layer (13, 33) thereby constricting a channel and lowering a drain saturation current. The channel restriction region (9, 38, 51) may be used to set a desired drain saturation current such that a second derivative of the transconductance with respect to the gate-source voltage is approximately zero and a first derivative of the transconductance with respect to the gate-source voltage is, approximately, a relative maximum at the desired operating point.
摘要翻译：低功率异质结场效应晶体管（10,30,50,60）能够以低漏电流工作，同时具有低的互调失真。在栅极（24,41,69）和漏极（25,46,65）之间形成沟道限制区（9,38,51）。信道限制区域（9,38,51）耗尽信道层（13,33），从而限制信道并降低漏极饱和电流。通道限制区域（9,38,51）可以用于设置所需的漏极饱和电流，使得相对于栅极 - 源极电压的跨导的二次导数近似为零，并且跨导的第一导数相对于栅极源极电压大约在所需工作点处的相对最大值。

2. 发明授权

US4980656A Active input impedance tuner for compensating for power loss 失效
标题翻译：有源输入阻抗调谐器，用于补偿功率损耗
公开(公告)号：US4980656A
公开(公告)日：1990-12-25
申请号：US444225
申请日：1989-12-01
申请人： Joseph M. Duffalo , Rimantas L. Vaitkus
发明人： Joseph M. Duffalo , Rimantas L. Vaitkus
IPC分类号： H03H11/28
CPC分类号： H03H11/28
摘要： A tuning circuit is provided for increasing the power transfer between first and second electrically coupled utilization circuits while controlling the effective source reflection coefficient thereby increasing the power available to the latter wherein the input signal provided at the output of the first utilization circuit is reflected back reducing the power available at the input of the second utilization circuit. The input signal is applied to the first input of the power combiner while a feedback signal proportional to the power loss between the first and second utilization circuits is applied to the second input of the power combiner. The output of the power combiner is increased by the feedback signal for compensating the power loss of the input signal such that the power available to the second utilization circuit is increased.
摘要翻译：提供调谐电路，用于增加第一和第二电耦合利用电路之间的功率传输，同时控制有效源反射系数，从而增加后者的可用功率，其中提供在第一利用电路的输出处的输入信号反射回减少在第二利用电路的输入处可用的功率。输入信号被施加到功率组合器的第一输入，而与第一和第二利用电路之间的功率损耗成比例的反馈信号被施加到功率组合器的第二输入端。通过用于补偿输入信号的功率损耗的反馈信号增加功率组合器的输出，使得第二利用电路可用的功率增加。

3. 发明授权

US07202765B2 Latchable, magnetically actuated, ground plane-isolated radio frequency microswitch 有权
标题翻译：可锁定，磁力驱动，接地平面隔离射频微动开关
公开(公告)号：US07202765B2
公开(公告)日：2007-04-10
申请号：US10845425
申请日：2004-05-14
申请人： Jun Shen , Rimantas L. Vaitkus , Gordon Tam , Meichun Ruan
发明人： Jun Shen , Rimantas L. Vaitkus , Gordon Tam , Meichun Ruan
IPC分类号： H01H51/22
CPC分类号： H01P1/127 , H01H50/005 , H01H2050/007
摘要： Radio frequency (RF) switch comprising an electromagnet formed on a magnet, a transmission line formed on the electromagnet and having a ground line and a signal line, and a movable contact connected to either the ground line or the signal line and capable of electrically coupling the ground line with the signal line. The transmission line is capable of propagating a RF signal if the ground line is electrically decoupled from the signal line. Conversely, the transmission line is incapable of propagating a RF signal if the ground line is electrically coupled with the signal line. The electromagnet can comprise an electromagnetic coil, formed in a layer of dielectric material, electrically coupled to a current source. Preferably, the movable contact is capable of being magnetically actuated, and is latchable. The magnet, the electromagnet, the transmission line, and the movable contact can have dimensions at a micron order of magnitude. The transmission line can be a coplanar waveguide. The coplanar waveguide can include a ground plane positioned between a layer of dielectric material and the electromagnet. The coplanar waveguide can also include means to electrically couple the ground plane to the ground line.
摘要翻译：射频（RF）开关，其包括形成在磁体上的电磁体，形成在电磁体上并具有接地线和信号线的传输线，以及连接到地线或信号线的可移动触点，并且能够电耦合地线与信号线。如果接地线与信号线电耦合，则传输线能够传播RF信号。相反，如果接地线与信号线电耦合，则传输线不能传播RF信号。电磁体可以包括电磁线圈，其形成在电耦合到电流源的电介质材料层中。优选地，可动触头能够被磁力驱动，并且可锁定。磁体，电磁体，传输线和可动触点可以具有微米数量级的尺寸。传输线可以是共面波导。共面波导可以包括位于介电材料层和电磁体之间的接地平面。共面波导还可以包括将接地平面电耦合到地线的装置。

4. 发明授权

US5482875A Method for forming a linear heterojunction field effect transistor 失效
标题翻译：用于形成线性异质结场效应晶体管的方法
公开(公告)号：US5482875A
公开(公告)日：1996-01-09
申请号：US229266
申请日：1994-04-18
申请人： Rimantas L. Vaitkus , Saied N. Tehrani , Vijay K. Nair , Herbert Goronkin
发明人： Rimantas L. Vaitkus , Saied N. Tehrani , Vijay K. Nair , Herbert Goronkin
IPC分类号： H01L29/812 , H01L21/338 , H01L29/08 , H01L29/10 , H01L29/778 , H01L29/80 , H01L21/335
CPC分类号： H01L29/7783 , H01L29/0891 , H01L29/1029 , Y10S148/072
摘要： A low power heterojunction field effect transistor (10, 30, 50, 60) capable of operating at low drain currents while having a low intermodulation distortion. A channel restriction region (9, 38, 51) is formed between the gate electrodes (24, 41, 69) and the drain electrodes (25, 46, 65). The channel restriction region (9, 38, 51) depletes the channel layer (13, 33) thereby constricting a channel and lowering a drain saturation current. The channel restriction region (9, 38, 51) may be used to set a desired drain saturation current such that a second derivative of the transconductance with respect to the gate-source voltage is approximately zero and a first derivative of the transconductance with respect to the gate-source voltage is, approximately, a relative maximum at the desired operating point.
摘要翻译：低功率异质结场效应晶体管（10,30,50,60）能够以低漏电流工作，同时具有低的互调失真。在栅极（24,41,69）和漏极（25,46,65）之间形成沟道限制区（9,38,51）。信道限制区域（9,38,51）耗尽信道层（13,33），从而限制信道并降低漏极饱和电流。通道限制区域（9,38,51）可以用于设置所需的漏极饱和电流，使得相对于栅极 - 源极电压的跨导的二次导数近似为零，并且跨导的第一导数相对于栅极源极电压大约在所需工作点处的相对最大值。

5. 发明授权

US4353059A Multithreshold converter utilizing reference tracking amplifiers 失效
标题翻译：多阈值转换器利用参考跟踪放大器
公开(公告)号：US4353059A
公开(公告)日：1982-10-05
申请号：US150538
申请日：1980-05-16
申请人： Rimantas L. Vaitkus
发明人： Rimantas L. Vaitkus
IPC分类号： H03M1/00 , H03K13/175
CPC分类号： H03M1/16 , H03M1/36
摘要： A multithreshold A/D converter has primary and secondary quantizing stages. The threshold reference voltages for the secondary quantizing stages are obtained by amplifying a threshold reference voltage step derived from the primary quantizing stage. Since the secondary threshold reference voltages are derived directly from the primary reference voltages the secondary reference voltages will track deviations occurring within the primary quantizing stage. A reference tracking amplifier is utilized to amplify a portion of the primary reference voltage and apply same to the secondary stage. By using monolithic integrated circuit fabrication techniques to identically match the reference tracking amplifier with the error amplifiers of the primary quantizing stages, the secondary threshold reference voltages will also track deviations in the peak error signals conveyed from the primary to the secondary quantizing stages.
摘要翻译：多阈值A / D转换器具有初级和次级量化级。二次量化级的阈值参考电压通过放大从一次量化级导出的阈值参考电压步长来获得。由于二次阈值参考电压直接从主参考电压导出，所以次参考电压将跟踪在初级量化阶段内发生的偏差。使用参考跟踪放大器来放大主要参考电压的一部分并将其应用于次级级。通过使用单片集成电路制造技术将参考跟踪放大器与主量化级的误差放大器相同地匹配，次级阈值参考电压也将跟踪从初级量化到二级量化级的传输峰值误差信号的偏差。

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