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1. 发明授权

US4085837A Vertical tabulation control for high speed printer 失效
标题翻译：高速打印机的垂直制表控制
公开(公告)号：US4085837A
公开(公告)日：1978-04-25
申请号：US683960
申请日：1976-05-06
申请人： Rikuo Takano , Yutaka Ohta , Yuji Sumitomo , Yoichi Shimazawa , Masahiko Aiba
发明人： Rikuo Takano , Yutaka Ohta , Yuji Sumitomo , Yoichi Shimazawa , Masahiko Aiba
IPC分类号： G06F3/12 , B41J11/42 , B41J15/00
CPC分类号： B41J11/42 , Y10S400/902
摘要： A vertical tabulation control for a high speed printer comprises a presettable memory, such as a random access memory (RAM), for storing vertical tabulation addresses, a counter for counting the number of line feed operations, a comparator for developing a continuous line feed termination command when the contents of the counter reach the preset vertical tabulation address, and a rechargeable battery means which is charged when the printer is activated through a power switch. The rechargeable battery supplies the presettable memory and the counter with a necessary voltage for maintaining their contents when the power supply through the power switch is terminated.
摘要翻译：用于高速打印机的垂直列表控制器包括用于存储垂直制表地址的可预置存储器（诸如随机存取存储器（RAM）），用于计数换行操作次数的计数器，用于开发连续送料终端当计数器的内容达到预设的垂直列表地址时，指令，以及当打印机通过电源开关激活时被充电的可充电电池装置。可充电电池为可预置的存储器和计数器提供必要的电压，以在通过电源开关的电源终止时维持其内容。

2. 发明授权

US5441571A Cylindrical apparatus for growth of epitaxial layers 失效
标题翻译：用于生长外延层的圆柱形装置
公开(公告)号：US5441571A
公开(公告)日：1995-08-15
申请号：US127729
申请日：1993-09-28
申请人： Yutaka Ohta , Yusho Hoshina , Takeshi Arai
发明人： Yutaka Ohta , Yusho Hoshina , Takeshi Arai
IPC分类号： H01L21/205 , C30B25/08 , C30B25/12 , C30B25/14 , C23C16/00
CPC分类号： C30B25/14 , C30B25/12
摘要： A cylindrical apparatus for the growth of epitaxial layers having disposed inside a bell jar a susceptor provided thereon with pockets for retaining a substrate is disclosed. It allows the flow rate of a raw material gas inside the apparatus to be uniformized, the fluctuation of film thickness of epitaxial layers within one batch to be repressed below 5%, and the fluctuation of film thickness of an epitaxial layer in the substrate to be decreased by equalizing the gap area between the peripheral surface of the susceptor and the internal wall surface of the bell jar at least in the lateral wall portions of the bell jar confronting the substrates on the susceptor.
摘要翻译：公开了一种用于生长外延层的圆柱形装置，其具有设置在喇叭口内的基座，其上设置有用于保持基板的凹穴。允许装置内的原料气体的流量均匀化，一批内的外延层的膜厚的波动将抑制在5％以下，并且衬底中的外延层的膜厚度的波动为至少在基座上的基板面对的钟形瓶的侧壁部分中使基座的周面与钟罩的内壁表面之间的间隙面积均匀化而减小。

3. 发明授权

US5427052A Method and apparatus for production of extremely thin SOI film substrate 失效
标题翻译：生产极薄SOI薄膜基板的方法和装置
公开(公告)号：US5427052A
公开(公告)日：1995-06-27
申请号：US873751
申请日：1992-04-27
申请人： Yutaka Ohta , Masatake Nakano , Masatake Katayama , Takao Abe
发明人： Yutaka Ohta , Masatake Nakano , Masatake Katayama , Takao Abe
IPC分类号： H01L21/302 , G01B11/06 , H01L21/3065 , H01L21/66 , H01L21/762 , H01L27/12 , C30B25/16
CPC分类号： H01L21/76251 , G01B11/0683 , H01L21/3065 , H01L22/12 , H01L22/20
摘要： A method and apparatus for uniformizing a bonded SOI (silicon on insulator) thin film layer by the reaction of chemical vapor-phase corrosion excited by the ultraviolet light, which effect the measurement of film thickness efficiently and conveniently and consequently attaining highly accurate control of the dispersion of thickness of the thin film layer without requiring the substrate to be removed from the reaction vessel for chemical vapor-phase corrosion on each occasion of the measurement or necessitating installation of a mechanism for alteration of the position of measurement inside or outside the reaction vessel are disclosed. The measurement of film thickness is carried out by keeping observation of interference fringes due to distribution of thickness of the film layer.
摘要翻译：通过由紫外光激发的化学气相腐蚀的反应使接合的SOI（绝缘体上硅）层均匀化的方法和装置，其有效和方便地实现膜厚度的测量，从而实现对在每次测量时，不需要从用于化学气相腐蚀的反应容器中除去衬底的薄膜层的厚度分散，或者需要安装用于改变反应容器内部或外部的测量位置的机构被披露。通过保持观察由于膜层的厚度分布引起的干涉条纹来进行膜厚度的测量。

4. 发明授权

US4255318A Fire-retardant putty-like compositions 失效
标题翻译：阻燃油灰组合物
公开(公告)号：US4255318A
公开(公告)日：1981-03-10
申请号：US58334
申请日：1979-07-17
申请人： Tamotsu Kaide , Toshikazu Gozen , Jinichi Taniguchi , Yutaka Ohta
发明人： Tamotsu Kaide , Toshikazu Gozen , Jinichi Taniguchi , Yutaka Ohta
IPC分类号： C08K3/22 , C09D5/34 , C08K7/14
CPC分类号： C09D5/34 , C08K3/22 , Y10S260/24
摘要： A composition for filling the spaces in bores penetrating walls and floors of buildings and having electric wires and cables extending therethrough or for filling the clearances at the joints of interior finishing materials of buildings. The composition comprises (a) 100 parts by weight of a curable polychloroprene in a liquid state at room temperature, (b) about 200 to about 700 parts by weight of a hydrated metallic oxide, and (c) about 20 to about 100 parts by weight of a heat-resistant fibrous material. The components (b) and (c) are contained in a combined amount of at least about 250 parts by weight per 100 parts by weight of the component (a). The composition will not soften, sag or drip in molten drops even when subjected to the high-temperature conditions of a fire, and gives a tough residual product retaining the original shape when burned and ashed, effectively preventing the spread of fire and assuring outstanding smoketightness.
摘要翻译：用于填充穿过建筑物的墙壁和地板的孔中的空间的组合物，并且具有延伸穿过其中的电线和电缆或用于填充建筑物内部装饰材料的接合处的间隙。组合物包含（a）100重量份在室温下为液态的可固化聚氯丁二烯，（b）约200至约700重量份的水合金属氧化物，和（c）约20至约100重量份耐热纤维材料的重量。组分（b）和（c）以每100重量份组分（a）至少约250重量份的总量含有。即使遭受火灾高温条件下，组合物也不会软化，下垂或滴落在熔融液滴中，并且在烧焦和灰化时产生保持原始形状的坚硬残留物，有效防止火势蔓延并确保优异的烟雾度。

5. 发明授权

US06174740B1 Method for analyzing impurities within silicon wafer 失效
标题翻译：分析硅晶片杂质的方法
公开(公告)号：US06174740B1
公开(公告)日：2001-01-16
申请号：US08714563
申请日：1996-09-16
申请人： Yutaka Ohta , Hirofumi Nishijo , Akira Kosugi
发明人： Yutaka Ohta , Hirofumi Nishijo , Akira Kosugi
IPC分类号： H01L21302
CPC分类号： G01N33/20
摘要： A method for analyzing impurities within a silicon wafer in a convenient and simple manner with high accuracy and sensitivity. In a first example 1, a silicon wafer is subjected on its surface to a sandblasting process with use of powder of SiO2 and then to a thermal oxidation process in a dry-oxygen gas atmosphere to easily move impurities present within the silicon wafer into a distorted layer and to form a thermal oxide film and a surface layer of the wafer positioned directly therebelow and containing the distorted layer. The thermal oxide film or the surface layer containing the distorted layer is dissolved with, e.g., a solution of hydrofluoric acid to recover and analyze the dissolved solution. In a comparative example 1, the same processes as in the example 1 are carried out to analyze a predetermined solution, except that the sandblasting process is omitted. In a comparative example 2, the same processing steps as in the example 1 are carried out to analyze a predetermined solution, except that the formation of the thermal oxide film is replaced by a native oxide film without applying any heat. In both of the comparative examples 1 and 2, neither Ni nor Cu is detected; whereas, in the example 1, an Ni content is 100×1010 atoms/cm2 and a Cu content is 1×1010 atoms/cm2.
摘要翻译：一种以高精度和灵敏度以方便简单的方式分析硅晶片内的杂质的方法。在第一实施例1中，使用SiO 2粉末将硅晶片在其表面上进行喷砂处理，然后进行热处理氧化工艺在干氧气体气氛中容易地将存在于硅晶片内的杂质移动到变形层中，并形成热氧化膜和晶片的表面层，其直接位于其下方并且包含失真层。含有变形层的热氧化膜或表面层用例如氢氟酸的溶液溶解以回收和分析溶解的溶液。在比较例1中，除了不进行喷砂处理以外，进行与实施例1相同的处理以分析预定的溶液。在比较例2中，进行与实施例1相同的处理步骤，以分析预定的溶液，除了热氧化膜的形成被自然氧化膜替代而不施加任何热量。在比较例1和2中，既不检测Ni也不Cu，而在实施例1中，Ni含量为100×10 10原子/ cm 2，Cu含量为1×10 10原子/ cm 2。

6. 发明授权

US5493455A Recording apparatus using a tape cassette with a memory 失效
标题翻译：使用具有存储器的带盒的记录装置
公开(公告)号：US5493455A
公开(公告)日：1996-02-20
申请号：US230235
申请日：1994-04-20
申请人： Tsutomu Miyoshi , Yutaka Ohta , Masako Sawada
发明人： Tsutomu Miyoshi , Yutaka Ohta , Masako Sawada
IPC分类号： G11B15/04 , G11B15/07 , G11B27/032 , G11B27/036 , G11B27/11 , G11B27/32 , G11B27/34 , G11B27/36 , G11B5/09
CPC分类号： G11B27/36 , G11B15/04 , G11B15/07 , G11B27/036 , G11B27/11 , G11B27/324 , G11B27/34 , G11B2220/655 , G11B2220/90 , G11B2220/91 , G11B27/032
摘要： A memory is provided in a tape cassette and it consists of a program information area for recording information on each program recorded on a tape and a tape information area for recording information on the entire tape. If this tape cassette is used by a video cassette recorder having a full function to drive the memory and by a video cassette recorder having a limited function to drive it, the program information recorded in the memory is consistent with the programs actually recorded on the tape. For example, a tape erasing prevention flag is set in the tape information area, while a program erasing prevention flag is set for each program in the program information area. In a different example, a tape inconsistency flag is set in the tape information area, while a program inconsistency flag is set for each program in the program information area. The data in the memory can be corrected by using such flags according to the programs actually recorded on the tape.
摘要翻译：存储器设置在磁带盒中，它由用于记录记录在磁带上的每个程序的信息的程序信息区和用于在整个磁带上记录信息的磁带信息区组成。如果这种盒式磁带被具有完整功能的盒式磁带录像机用于驱动存储器和具有有限功能的录像机来驱动它，则记录在存储器中的节目信息与实际记录在磁带上的节目一致。例如，在程序信息区域中为每个程序设置程序擦除防止标志，在带信息区域中设置磁带擦除防止标志。在不同的示例中，在磁带信息区域中设置磁带不一致标志，同时为节目信息区域中的每个节目设置节目不一致标志。可以根据实际记录在磁带上的程序使用这些标志来校正存储器中的数据。

7. 发明授权

US5183783A Method for production of dielectric-separation substrate 失效
标题翻译：电介质分离基板的制造方法
公开(公告)号：US5183783A
公开(公告)日：1993-02-02
申请号：US811958
申请日：1991-12-23
申请人： Yutaka Ohta , Konomu Ohki , Masatake Katayama
发明人： Yutaka Ohta , Konomu Ohki , Masatake Katayama
IPC分类号： H01L21/762
CPC分类号： H01L21/76297 , Y10S438/928 , Y10S438/977
摘要： Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein.This dielectric-separation substrate is produced by a method which comprises forming a thermal oxide film on a single crystal silicon substrate having grooves incised in advance therein, then forming an irreversibly thermally shrinkable film on the rear surface of said single crystal silicon substrate prior to depositing a polycrystalline silicon thereon, then depositing a polycrystalline silicon on said single crystal silicon substrate, and thereafter grinding said single crystal silicon substrate in conjunction with said irreversibly thermally shrinkable film.

8. 发明授权

US08330168B2 Nitride semiconductor light-emitting element and method of manufacturing the same 有权
标题翻译：氮化物半导体发光元件及其制造方法
公开(公告)号：US08330168B2
公开(公告)日：2012-12-11
申请号：US13143874
申请日：2009-12-24
申请人： Yutaka Ohta , Yoshikazu Ooshika
发明人： Yutaka Ohta , Yoshikazu Ooshika
IPC分类号： H01L29/15
CPC分类号： H01L33/32 , H01L33/007 , H01L33/02 , H01L33/14 , H01L33/40
摘要： An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an AlxGa1-xN material (0.7≦x≦1.0) and an n-clad layer provided on the n-contact layer; and an interlayer made of an AlyGa1-yN material (0≦y≦0.5) is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.
摘要翻译：本发明的目的是提供一种氮化物半导体发光器件，其中在保持令人满意的外部量子效率的同时，在n接触层和n侧电极之间产生的接触电阻被有效地降低，并且有效地产生氮化物半导体发光器件。具体地说，本发明特征在于提供一种具有半导体层叠体的氮化物半导体发光元件，该半导体层叠体包括n型层叠体，发光层和p型层叠体，以及n侧电极和p侧电极其特征在于，所述n型层压体包括由Al x Ga 1-x N材料（0.7＆amp; N e; x＆nlE; 1.0）构成的n接触层和设置在所述n接触层上的n包层; 并且在n接触层的发光层侧的部分曝光部分上设置由Al y Ga 1-y N材料制成的中间层（0＆amp; nlE; y＆nlE; 0.5）。

9. 发明申请

US20120299465A1 LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20120299465A1
公开(公告)日：2012-11-29
申请号：US13513015
申请日：2010-12-08
申请人： Tatsunori Toyota , Yutaka Ohta
发明人： Tatsunori Toyota , Yutaka Ohta
IPC分类号： H05B33/12 , H05B33/10
CPC分类号： H01L33/382 , H01L33/20 , H01L33/385
摘要： To provide a light emitting element, having: a lamination structure including a first conductive layer and a second conductive layer with a light emitting layer interposed between them; a groove structure in which the second conductive layer and the light emitting layer are divided into large and small two parts; a second conductive electrode pad that is electrically connected to the second conductive layer on the divided larger second conductive layer, a first conductive electrode pad on the divided smaller second conductive layer, and two or more electrical contacts connected to the first conductive layer so as to be independent from each other, by a conductive wiring extending to the first conductive layer, with the first conductive electrode pad as a start point.
摘要翻译：为了提供一种发光元件，具有：具有第一导电层和第二导电层的叠层结构，其间插入有发光层; 沟槽结构，其中第二导电层和发光层被分成大的和小的两部分; 第二导电电极焊盘，其在分割的较大的第二导电层上电连接到第二导电层，在分割的较小的第二导电层上的第一导电电极焊盘，以及连接到第一导电层的两个或更多个电触点，以便通过延伸到第一导电层的导电布线彼此独立，以第一导电电极焊盘为起始点。

10. 发明申请

US20090250684A1 LIGHT EMITTING SEMICONDUCTOR 有权
标题翻译：发光二极管
公开(公告)号：US20090250684A1
公开(公告)日：2009-10-08
申请号：US12398720
申请日：2009-03-05
申请人： Yutaka Ohta , Yoshikazu Ooshika
发明人： Yutaka Ohta , Yoshikazu Ooshika
IPC分类号： H01L33/00 , H01L21/20 , H01L29/66
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/38
摘要： A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm.
摘要翻译：公开了一种半导体元件，其具有第一导电类型的层叠体，发光层，第二导电类型的层叠体，具有收缩孔的收缩层，以及具有照明孔的第一电极，位于使得在第一和第二电极之间行进的电荷通过发光层。收缩孔面积大于照明孔面积，照明孔和收缩孔露出第二导电型层叠体的一部分。反射镜被定位成使得反射镜接收从发光层发射的穿过第一导电类型的层叠体的光，并且反射镜被构造成对于具有200nm至350nm的峰值波长的光具有高反射率。

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