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1. 发明申请

US20100202806A1 IMAGE FORMING APPARATUS 有权
标题翻译：图像形成装置
公开(公告)号：US20100202806A1
公开(公告)日：2010-08-12
申请号：US12765344
申请日：2010-04-22
申请人： Rie ENDO , Shuji MORIYA , Katsuhiro SAKAIZAWA , Norio TAKAHASHI
发明人： Rie ENDO , Shuji MORIYA , Katsuhiro SAKAIZAWA , Norio TAKAHASHI
IPC分类号： G03G15/08
CPC分类号： G03G15/065 , G03G2215/0634
摘要： An image forming apparatus includes an image bearing member; a developer carrying member, contactable to the image bearing member, for carrying a developer to a developing position to develop an electrostatic image formed on the image bearing member with the developer; a supplying member for supplying the developer to the developer carrying member, wherein a peripheral speed of the developer carrying member is not less than 1.05 times and not more than 1.20 times a peripheral speed of the image bearing member, and an arithmetic average roughness Ra is not less than 0.20 times and not more than 0.33 times a volume average particle size of the developer, wherein a potential applied to the supplying member is different from a potential applied to the developer carrying member toward a larger potential of a regular charge polarity of the developer.
摘要翻译：图像形成装置包括：图像承载部件; 显影剂承载构件，可接触图像承载构件，用于将显影剂携带到显影位置以使显影剂形成在图像承载构件上形成静电图像; 用于将显影剂供应到显影剂承载构件的供应构件，其中显影剂承载构件的圆周速度不小于图像承载构件的圆周速度的1.05倍且不大于1.20倍，并且算术平均粗糙度Ra为不小于显影剂的体积平均粒径的0.20倍且不大于0.33倍，其中施加到供给构件的电位不同于施加到显影剂承载构件的电位朝向较大的电荷极性的电位开发者

2. 发明申请

US20080251018A1 GAS SUPPLY SYSTEM FOR SEMICONDUCTOR MANUFACTURING APPARATUS 有权
标题翻译：用于半导体制造设备的气体供应系统
公开(公告)号：US20080251018A1
公开(公告)日：2008-10-16
申请号：US12061982
申请日：2008-04-03
申请人： Shuji MORIYA , Ken Nakao
发明人： Shuji MORIYA , Ken Nakao
IPC分类号： C23C16/00
CPC分类号： C23C16/4402 , C23C14/564 , Y10S55/15
摘要： A gas supply system according to the present invention comprises a gas filter disposed in a gas supply flow passage through which a gas is supplied to a semiconductor manufacturing apparatus and a metal component remover disposed in the gas supply flow passage downstream relative to the gas filter, which removes a volatile metal component contained in the gas flowing through the gas supply flow passage by liquefying the volatile metal component. The structure adopted in the gas supply system prevents entry of the volatile metal component, which cannot be eliminated through the gas filter, into the semiconductor manufacturing apparatus as the corrosive gas is supplied thereto by the gas supply flow passage.
摘要翻译：根据本发明的气体供给系统包括：气体过滤器，设置在气体供给流路中，通过该气体供给流路将气体供给到半导体制造装置，并且配置在气体供给流路中的金属成分去除器相对于气体过滤器下游，其通过液化挥发性金属成分除去流过气体供给流路的气体中所含的挥发性金属成分。气体供给系统中采用的结构防止了由气体供给流路供给腐蚀性气体而将不能通过气体过滤器排出的挥发性金属成分进入半导体制造装置。

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