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1. 发明授权

US06724654B1 Pulsed write techniques for magneto-resistive memories 有权
标题翻译：用于磁阻存储器的脉冲写入技术
公开(公告)号：US06724654B1
公开(公告)日：2004-04-20
申请号：US10366292
申请日：2003-02-13
申请人： Richard W. Swanson , William J. Johnson , Theodore Zhu , Anthony S. Arrott
发明人： Richard W. Swanson , William J. Johnson , Theodore Zhu , Anthony S. Arrott
IPC分类号： G11C1100
CPC分类号： G11C8/14 , G11C11/15
摘要： A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.
摘要翻译：公开了具有共享字线和感测线的磁阻存储器。通过提供共享字线和感测线，可以减少驱动字线和感测线电流所需的较大驱动器的数量。这减少了存储器的周边开销，并且可以增加总体密度并降低存储器的整体功率。

2. 发明授权

US07038940B2 Pulsed write techniques for magneto-resistive memories 有权
公开(公告)号：US07038940B2
公开(公告)日：2006-05-02
申请号：US11031961
申请日：2005-01-07
申请人： Richard W. Swanson , William J. Johnson , Theodore Zhu , Anthony S. Arrott
发明人： Richard W. Swanson , William J. Johnson , Theodore Zhu , Anthony S. Arrott
IPC分类号： G11C11/00
CPC分类号： G11C8/14 , G11C11/15
摘要： A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.

3. 发明授权

US06850431B2 Pulsed write techniques for magneto-resistive memories 有权
公开(公告)号：US06850431B2
公开(公告)日：2005-02-01
申请号：US10809983
申请日：2004-03-26
申请人： Richard W. Swanson , William J. Johnson , Theodore Zhu , Anthony S. Arrott
发明人： Richard W. Swanson , William J. Johnson , Theodore Zhu , Anthony S. Arrott
IPC分类号： G11C8/14 , G11C11/15 , G11C11/00
CPC分类号： G11C8/14 , G11C11/15
摘要： A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.

4. 发明授权

US06493259B1 Pulse write techniques for magneto-resistive memories 有权
标题翻译：用于磁阻存储器的脉冲写入技术
公开(公告)号：US06493259B1
公开(公告)日：2002-12-10
申请号：US09638637
申请日：2000-08-14
申请人： Richard W. Swanson , William J. Johnson , Theodore Zhu , Anthony S. Arrott
发明人： Richard W. Swanson , William J. Johnson , Theodore Zhu , Anthony S. Arrott
IPC分类号： G11C1100
CPC分类号： G11C11/15 , G11C8/14
摘要： A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.
摘要翻译：公开了具有共享字线和感测线的磁阻存储器。通过提供共享字线和感测线，可以减少驱动字线和感测线电流所需的较大驱动器的数量。这减少了存储器的周边开销，并且可以增加总体密度并降低存储器的整体功率。

5. 发明授权

US06538918B2 Pulsed write techniques for magneto-resistive memories 有权
公开(公告)号：US06538918B2
公开(公告)日：2003-03-25
申请号：US10174214
申请日：2002-06-17
申请人： Richard W. Swanson , William J. Johnson , Theodore Zhu
发明人： Richard W. Swanson , William J. Johnson , Theodore Zhu
IPC分类号： G11C1100
CPC分类号： G11C11/15 , G11C8/14
摘要： A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.

6. 发明授权

US06532168B1 Pulsed write techniques for magneto-resistive memories 有权
公开(公告)号：US06532168B1
公开(公告)日：2003-03-11
申请号：US10174215
申请日：2002-06-17
申请人： Richard W. Swanson , William J. Johnson , Theodore Zhu
发明人： Richard W. Swanson , William J. Johnson , Theodore Zhu
IPC分类号： G11C1100
CPC分类号： G11C11/15 , G11C8/14
摘要： A magneto-resistive memory that has a shared word line and sense line is disclosed. By providing the shared word line and sense line, the number of relatively large drivers required to drive the word line and sense line currents can be reduced. This reduces the peripheral overhead of the memory, and may increase the overall density and reduce the overall power of the memory.

7. 发明授权

US06968482B2 Memory redundancy with programmable non-volatile control 有权
公开(公告)号：US06968482B2
公开(公告)日：2005-11-22
申请号：US11067355
申请日：2005-02-25
申请人： Theodore Zhu , Gary Kirchner , Richard W. Swanson , Yong Lu
发明人： Theodore Zhu , Gary Kirchner , Richard W. Swanson , Yong Lu
IPC分类号： G11C29/00
CPC分类号： G11C29/808 , G11C29/846
摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.

8. 发明授权

US07389451B2 Memory redundancy with programmable control 有权
标题翻译：内存冗余与可编程控制
公开(公告)号：US07389451B2
公开(公告)日：2008-06-17
申请号：US11067356
申请日：2005-02-25
申请人： Theodore Zhu , Gary Kirchner , Richard W. Swanson , Yong Lu
发明人： Theodore Zhu , Gary Kirchner , Richard W. Swanson , Yong Lu
IPC分类号： G01C29/00
CPC分类号： G11C29/808 , G11C29/846
摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.
摘要翻译：公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。由于可编程存储器元件是非易失性的，所以在运输过程中或者系统中的电源丢失时，所需的更换配置不会丢失。通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余行或列的存储器元件替换。这在更换过程中提供了更多的灵活性。

9. 发明授权

US07328379B2 Look-up table for use with redundant memory 有权
标题翻译：查找表用于冗余内存
公开(公告)号：US07328379B2
公开(公告)日：2008-02-05
申请号：US11067326
申请日：2005-02-25
申请人： Theodore Zhu , Gary Kirchner , Richard W. Swanson , Yong Lu
发明人： Theodore Zhu , Gary Kirchner , Richard W. Swanson , Yong Lu
IPC分类号： G11C29/00
CPC分类号： G11C29/808 , G11C29/846
摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.
摘要翻译：公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。由于可编程存储器元件是非易失性的，所以在运输过程中或者系统中的电源丢失时，所需的更换配置不会丢失。通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余行或列的存储器元件替换。这在更换过程中提供了更多的灵活性。

10. 发明授权

US06671834B1 Memory redundancy with programmable non-volatile control 有权
标题翻译：内存冗余与可编程非易失性控制
公开(公告)号：US06671834B1
公开(公告)日：2003-12-30
申请号：US09618492
申请日：2000-07-18
申请人： Theodore Zhu , Gary Kirchner , Richard W. Swanson , Yong Lu
发明人： Theodore Zhu , Gary Kirchner , Richard W. Swanson , Yong Lu
IPC分类号： G11C2900
CPC分类号： G11C29/808 , G11C29/846
摘要： A redundancy scheme for a memory is disclosed that is programmable both before and after the memory device is packaged and/or installed in a system. This is preferably accomplished by using programmable non-volatile memory elements to control the replacement circuitry. Because the programmable memory elements are non-volatile, the desired replacement configuration is not lost during shipping, or if power is lost in a system. By allowing post-packaging replacement of defective memory elements, the overall yield of the device may be improved. By allowing post system installation replacement of defective memory elements, the reliability of many systems may be improved. In addition, the disclosed redundancy scheme allows two or more defective memory elements from different rows or columns to be replaced with memory elements from a single redundant low or column. This provides added flexibility during the replacement process.
摘要翻译：公开了一种用于存储器的冗余方案，其在存储器件被封装和/或安装在系统中之前和之后是可编程的。这优选地通过使用可编程非易失性存储器元件来控制替换电路来实现。由于可编程存储器元件是非易失性的，所以在运输过程中，或者系统中的电源丢失时，所需的更换配置不会丢失。通过允许更换缺陷存储元件的后期封装，可以提高器件的整体产量。通过允许后置系统安装更换有缺陷的存储器元件，可以提高许多系统的可靠性。此外，所公开的冗余方案允许来自不同行或列的两个或更多个有缺陷的存储器元件被来自单个冗余低或列的存储器元件替换。这在更换过程中提供了更多的灵活性。

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