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1. 发明申请

US20070284697A1 Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus 失效
公开(公告)号：US20070284697A1
公开(公告)日：2007-12-13
申请号：US11889517
申请日：2007-08-14
申请人： Richard Van Haren , Sanjaysingh Lalbahadoersing , Henry Megens
发明人： Richard Van Haren , Sanjaysingh Lalbahadoersing , Henry Megens
IPC分类号： H01L29/06
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.

2. 发明授权

US07271073B2 Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus 失效
标题翻译：用于非透明栅极层对准的标记，用于制造这种标记的方法，以及在光刻设备中使用这种标记
公开(公告)号：US07271073B2
公开(公告)日：2007-09-18
申请号：US10879707
申请日：2004-06-30
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Henry Megens
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Henry Megens
IPC分类号： H01L21/66 , H01L21/67
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.
摘要翻译：用于制造包括以重复排列的线元件和沟槽元件的标记结构的方法包括用二氧化硅填充沟槽元件并调平标记结构。在半导体表面上生长牺牲氧化物层，并且将线元件的第一子集暴露于包括掺杂剂物质的离子注入束以掺杂并改变第一子集的蚀刻速率。将衬底退火以激活掺杂剂物质，并且蚀刻半导体表面以去除牺牲氧化物层，并将第一子集级别化为第一级并且创建拓扑，使得第一子集具有与第二子集不同的第一级不同于第一子集的标记结构的表面部分的水平。

3. 发明授权

US07453161B2 Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus 失效
标题翻译：用于非透明栅极层对准的标记，用于制造这种标记的方法，以及在光刻设备中使用这种标记
公开(公告)号：US07453161B2
公开(公告)日：2008-11-18
申请号：US11889517
申请日：2007-08-14
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Henry Megens
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Henry Megens
IPC分类号： H01L23/544
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset.
摘要翻译：用于制造包括以重复排列的线元件和沟槽元件的标记结构的方法包括用二氧化硅填充沟槽元件并调平标记结构。在半导体表面上生长牺牲氧化物层，并且将线元件的第一子集暴露于包括掺杂剂物质的离子注入束以掺杂并改变第一子集的蚀刻速率。将衬底退火以激活掺杂剂物质，并且蚀刻半导体表面以去除牺牲氧化物层，并将第一子集级别化为第一级并且创建拓扑，使得第一子集具有与第二子集不同的第一级不同于第一子集的标记结构的表面部分的水平。

4. 发明申请

US20060003540A1 Marker for alignment of non-transparent gate layer, method for manufacturing such a marker, and use of such a marker in a lithographic apparatus 失效
标题翻译：用于非透明栅极层对准的标记，用于制造这种标记的方法，以及在光刻设备中使用这种标记
公开(公告)号：US20060003540A1
公开(公告)日：2006-01-05
申请号：US10879707
申请日：2004-06-30
申请人： Richard Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Henry Megens
发明人： Richard Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Henry Megens
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for manufacturing a marker structure including line elements and trench elements arranged in a repetitive order includes filling the trench elements with silicon dioxide and leveling the marker structure. A sacrificial oxide layer is grown on the semiconductor surface, and a first subset of the line elements is exposed to an ion implantation beam including a dopant species to dope and change an etching rate of the first subset. The substrate is annealed to activate the dopant species, and the semiconductor surface is etched to remove the sacrificial oxide layer and to level the first subset to a first level and to create a topology such that the first subset has a first level differing from a second level of a surface portion of the marker structure different from the first subset .
摘要翻译：用于制造包括以重复排列的线元件和沟槽元件的标记结构的方法包括用二氧化硅填充沟槽元件并调平标记结构。在半导体表面上生长牺牲氧化物层，并且将线元件的第一子集暴露于包括掺杂剂物质的离子注入束以掺杂并改变第一子集的蚀刻速率。将衬底退火以激活掺杂剂物质，并且蚀刻半导体表面以去除牺牲氧化物层，并将第一子集级别化为第一级并且创建拓扑，使得第一子集具有与第二子集不同的第一级不同于第一子集的标记结构的表面部分的水平。

5. 发明授权

US08243259B2 Lithographic apparatus 有权
标题翻译：平版印刷设备
公开(公告)号：US08243259B2
公开(公告)日：2012-08-14
申请号：US12486458
申请日：2009-06-17
申请人： Vitally Prosyentsov , Sanjaysingh Lalbahadoersing , Sami Musa , Hyun-Woo Lee
发明人： Vitally Prosyentsov , Sanjaysingh Lalbahadoersing , Sami Musa , Hyun-Woo Lee
IPC分类号： G01B11/00 , G03B27/42 , G03B27/54 , G03B27/58 , G03B27/74
CPC分类号： G03B27/52 , G03F7/70341 , G03F7/707 , G03F7/7085
摘要： A substrate stage for an immersion type lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate, the substrate stage being constructed to hold the substrate and including at least a sensor for sensing the patterned radiation beam, the sensor including an at least partially transmissive layer having a front side facing the incoming radiation beam and a back side opposite the front side, wherein the back side is provided with at least a sensor mark to be subjected to the radiation beam transmitted through the layer.
摘要翻译：用于浸入式光刻设备的衬底台被布置成将来自图案形成装置的图案化辐射束投影到衬底上，衬底台被构造成保持衬底并且至少包括用于感测图案化辐射束的传感器，传感器包括至少部分透射层，其具有面向所述入射辐射束的前侧和与所述前侧相对的后侧，其中，所述后侧设置有至少一个传感器标记，所述传感器标记经受穿过所述层的辐射束。

6. 发明授权

US08203692B2 Sub-segmented alignment mark arrangement 有权
标题翻译：分段对准标记布置
公开(公告)号：US08203692B2
公开(公告)日：2012-06-19
申请号：US12482770
申请日：2009-06-11
申请人： Sami Musa , Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing
发明人： Sami Musa , Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing
IPC分类号： G03B27/68 , G03B27/42
CPC分类号： G03B27/54 , G03F9/7076 , H01L23/544 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark on a substrate includes a periodic structure of a plurality of first elements and a plurality of second elements. The elements are arranged in an alternating repetitive sequence in a first direction. An overall pitch of the periodic structure is equal to a sum of a width of the first element and a width of the second element in the first direction. Each first element has a first periodic sub-structure with a first sub-pitch and each second element has a second periodic sub-structure with second sub-pitch. An optical property of the first element for interaction with a beam of radiation having a wavelength λ is different from the optical property of the second element. The overall pitch is larger than the wavelength λ, and each of the first and the second sub-pitch is smaller than the wavelength.
摘要翻译：衬底上的对准标记包括多个第一元件和多个第二元件的周期性结构。元件沿第一方向以交替的重复序列排列。周期性结构的整体间距等于第一元件的宽度和第二元件在第一方向上的宽度之和。每个第一元件具有具有第一子间距的第一周期性子结构，并且每个第二元件具有具有第二子间距的第二周期性子结构。用于与具有波长λ的辐射束相互作用的第一元件的光学性质不同于第二元件的光学性质。总间距大于波长λ，第一和第二子间距都小于波长。

7. 发明申请

US20090316122A1 LITHOGRAPHIC APPARATUS 有权
标题翻译： LITHOGRAPHIC设备
公开(公告)号：US20090316122A1
公开(公告)日：2009-12-24
申请号：US12486458
申请日：2009-06-17
申请人： Vitaliy Prosyentsov , Sanjaysingh Lalbahadoersing , Sami Musa , Hyun-Woo Lee
发明人： Vitaliy Prosyentsov , Sanjaysingh Lalbahadoersing , Sami Musa , Hyun-Woo Lee
IPC分类号： G03B27/52
CPC分类号： G03B27/52 , G03F7/70341 , G03F7/707 , G03F7/7085
摘要： A substrate stage for an immersion type lithographic apparatus is arranged to project a patterned radiation beam from a patterning device onto a substrate, the substrate stage being constructed to hold the substrate and including at least a sensor for sensing the patterned radiation beam, the sensor including an at least partially transmissive layer having a front side facing the incoming radiation beam and a back side opposite the front side, wherein the back side is provided with at least a sensor mark to be subjected to the radiation beam transmitted through the layer.
摘要翻译：用于浸入式光刻设备的衬底台被布置成将来自图案形成装置的图案化辐射束投影到衬底上，衬底台被构造成保持衬底并且至少包括用于感测图案化辐射束的传感器，传感器包括至少部分透射层，其具有面向所述入射辐射束的前侧和与所述前侧相对的后侧，其中，所述后侧设置有至少一个传感器标记，所述传感器标记经受穿过所述层的辐射束。

8. 发明授权

US07598024B2 Method and system for enhanced lithographic alignment 失效
标题翻译：用于增强光刻对准的方法和系统
公开(公告)号：US07598024B2
公开(公告)日：2009-10-06
申请号：US11370159
申请日：2006-03-08
申请人： Sanjaysingh Lalbahadoersing , Sami Musa
发明人： Sanjaysingh Lalbahadoersing , Sami Musa
IPC分类号： G03C5/00
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/708 , G03F9/7084 , H01L21/3105 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A method for alignment mark preservation includes a step of preparing a lower alignment mark structure on a substrate. In one configuration of the invention, the alignment mark structure includes a lower trench. In a further step, a hard mask coating is applied to a substrate that includes the alignment marks. Preferably, the hard mask material is an amorphous carbon material. In a further step, a selected portion of the hard mask located above the lower alignment mark structure is exposed to a dose of radiation. In one aspect of the invention, the surface of regions of the hard mask coating that receive the dose of radiation become elevated with respect to other regions of the hard mask surface. For those elevated regions of the hard mask that are aligned with an underlying alignment mark trench, the elevated regions serve as an alignment mark that preserves the original horizontal position of the underlying alignment mark.
摘要翻译：对准标记保存的方法包括在基板上制备下对准标记结构的步骤。在本发明的一个结构中，对准标记结构包括下沟槽。在另一步骤中，将硬掩模涂层施加到包括对准标记的基板。优选地，硬掩模材料是无定形碳材料。在另一步骤中，位于下对准标记结构上方的硬掩模的选定部分暴露于一定剂量的辐射。在本发明的一个方面，接收辐射剂量的硬掩模涂层的区域的表面相对于硬掩模表面的其它区域升高。对于与底层对准标记沟槽对准的硬掩模的那些升高区域，升高的区域用作保留下面的对准标记的原始水平位置的对准标记。

9. 发明申请

US20130070226A1 MARKER STRUCTURE AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20130070226A1
公开(公告)日：2013-03-21
申请号：US13678343
申请日：2012-11-15
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
IPC分类号： G03F9/00 , G03F7/20
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.

10. 发明授权

US08319967B2 Marker structure and method of forming the same 失效
标题翻译：标记结构及其形成方法
公开(公告)号：US08319967B2
公开(公告)日：2012-11-27
申请号：US12328167
申请日：2008-12-04
申请人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
发明人： Richard Johannes Franciscus Van Haren , Sanjaysingh Lalbahadoersing , Sami Musa , Patrick Warnaar , Maya Angelova Doytcheva
IPC分类号： G01B11/00 , G03B27/54 , G03B27/42
CPC分类号： G03F9/7065 , G03F7/20 , G03F9/7076 , G03F9/708 , G03F9/7084 , Y10T428/24909
摘要： The invention relates to a marker structure for optical alignment of a substrate and provided thereon. The marker structure has a first reflecting surface at a first level and a second reflecting surface at a second level. A separation between the first level and the second level determines a phase depth condition. The marker structure further has an additional structure. The additional structure is arranged to modify the separation during manufacture of the marker structure. The invention further relates to a method of forming such a marker structure.
摘要翻译：本发明涉及一种用于基板的光学取向并在其上提供的标记结构。标记结构具有第一水平的第一反射表面和第二水平的第二反射表面。第一级和第二级之间的间隔确定相位深度条件。标记结构还具有另外的结构。布置该附加结构以在标记结构的制造期间改变分离。本发明还涉及形成这种标记结构的方法。

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