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    • 2. 发明申请
    • Heterojunction bipolar transistor with dielectric assisted planarized contacts and method for fabricating
    • 具有介质辅助平面化触点的异质结双极晶体管及其制造方法
    • US20060121669A1
    • 2006-06-08
    • US11227858
    • 2005-09-14
    • Richard PiersonJames LiBerinder BrarJohn Higgins
    • Richard PiersonJames LiBerinder BrarJohn Higgins
    • H01L21/84H01L21/00H01L21/8249
    • H01L29/66318H01L29/7371Y10S438/978
    • A heterojunction bipolar transistor (HBT) is disclosed that includes successive emitter, base and collector and sub-collector epitaxial layers and emitter, base and collector contact metals contacting the emitter, base and sub-collector layers respectively. A passivation material is included that covers the uncovered portions of the layers and covers substantially all of the contact metals. The passivation material has a planar surface and a portion of each of the contact metals protrudes from the surface. Planar metals are included on the planar surface, each being isolated from the others and in electrical contact with a respective contact metal. A method for fabricating an HBT is also disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer. The epitaxial layers are etched to provide locations for contact metals and emitter, base and contact metals are deposited on the emitter, base and sub-collector epitaxial layers, respectively. A self-alignment material is deposited on the surface of the substrate around the epitaxial layers and a planarization material is deposited on and covers the top surface of the HBT. The planarization material is then etched so it has a planar surface about the same level as the surface of the self-alignment material and the contact metals protrude from the planar surface. The planar metals are then deposited over the protruding portions of the contact metals.
    • 公开了一种异质结双极晶体管(HBT),其包括连续的发射极,基极和集电极和子集电极外延层以及分别与发射极,基极和子集电极层接触的发射极,基极和集电极接触金属。 包括钝化材料,其覆盖层的未覆盖部分并覆盖基本上所有的接触金属。 钝化材料具有平坦表面,并且每个接触金属的一部分从表面突出。 平面金属包括在平面表面上,每个与其它表面分离,并与相应的接触金属电接触。 还公开了制造HBT的方法,其中连续的发射极,基极,集电极和亚集电极外延层沉积在衬底上,衬底与子集电极层相邻。 外延层被蚀刻以提供用于接触金属和发射极的位置,基极和接触金属分别沉积在发射极,基极和次集电极外延层上。 自对准材料沉积在外延层周围的衬底表面上,平坦化材料沉积在HBT的顶表面上并覆盖其上表面。 然后对平坦化材料进行蚀刻,使其具有与自对准材料的表面大致相同的平面,并且接触金属从平坦表面突出。 然后将平面金属沉积在接触金属的突出部分上。
    • 3. 发明申请
    • Mechanically-stable BJT with reduced base-collector capacitance
    • 机械稳定的BJT具有降低的基极 - 集电极电容
    • US20050023643A1
    • 2005-02-03
    • US10631380
    • 2003-07-30
    • James LiRichard PiersonBerinder BrarJohn Higgins
    • James LiRichard PiersonBerinder BrarJohn Higgins
    • H01L23/482H01L29/423H01L29/73H01L29/732H01L29/737H01L27/082
    • H01L29/7317H01L23/4821H01L23/4822H01L24/01H01L29/42304H01L29/732H01L29/7371H01L2924/1305H01L2924/00
    • A bipolar junction transistor (BJT) requires the fabrication of a BJT structure and of a support post which is adjacent to, but physically and electrically isolated from, the BJT structure. The BJT structure includes a semi-insulating substrate, a subcollector, a collector, a base, and an emitter. Metal contacts are formed on the subcollector and emitter to provide collector and emitter terminals. Contact to the structure's base is accomplished with a metal contact which extends from the top of the support post to the edge of the base nearest the support post. The contact bridges the physical and electrical separation between the support post and the base and provides a base terminal for the device. The base contact need extend over the edge of the base by no more than the transfer length associated with the fabrication process. This results in the smaller base contact area over the collector than would otherwise be necessary, and a consequent reduction in base-collector capacitance. The invention is particularly useful when forming heterojunction bipolar transistors (HBTs), built on a compound semiconductor substrate such as indium phosphide (InP).
    • 双极结型晶体管(BJT)需要制造BJT结构和与BJT结构相邻但物理和电隔离的支撑柱。 BJT结构包括半绝缘衬底,子集电极,集电极,基极和发射极。 金属触点形成在子集电极和发射极上,以提供集电极和发射极端子。 与结构基座的接触是通过从支撑柱的顶部延伸到靠近支撑柱的基部边缘的金属接触来实现的。 触点桥接支撑柱和基座之间的物理和电气分隔,并为设备提供基座。 基底接触需要不超过与制造工艺相关联的传输长度在基底的边缘上延伸。 这导致集电极上的基极接触面积比原来需要的更小,从而导致基极 - 集电极电容的降低。 本发明在构建在诸如磷化铟(InP)的化合物半导体衬底上的异质结双极晶体管(HBT)时特别有用。
    • 8. 发明申请
    • Compounds useful as motilin agonists and method
    • 可用作胃动素激动剂和方法的化合物
    • US20050080116A1
    • 2005-04-14
    • US10940240
    • 2004-09-14
    • James LiHannguang ChaoJoseph TinoWilliam Ewing
    • James LiHannguang ChaoJoseph TinoWilliam Ewing
    • A61K31/4178A61K31/4196A61K31/422A61K31/4245A61K31/495A61K31/50C07D413/02C07D471/20C07D43/02
    • C07D471/20A61K31/495A61K31/50
    • Compounds are provided which are useful in treating disorders of gastrointestinal motility and which have the structure or a pharmaceutically acceptable salt thereof, a prodrug ester thereof, and all stereoisomers thereof, wherein R1 and R2 are the same or different and are independently selected from hydrogen, alkyl, aryl, cycloalkyl, alkenyl, alkynyl, arylalkyl, heteroaryl, heteroarylalkyl or heterocycloalkyl; Z is selected from —CON(R4)R4a, —CO2R4, —SO2N(R4)R4a, —SO2R4, CN, and R4 and R4a are the same or different and are independently selected from hydrogen, alkyl, cycloalkyl, aryl, arylalkyl, heteroaryl, or heteroarylalkyl or R4 and R4a can be joined together to form a heterocycle. R4b is selected from hydrogen, halogen, hydroxyl, CN, OCF3, CF3, CONH2, SONH2, SO2CH3, NHCOCH3 or NHCO2CH3; and Q is a substituted bicyclic heterocycle. A method for using such compounds for treating disorders of gastrointestinal motility is also provided.
    • 提供了可用于治疗胃肠蠕动障碍并具有其结构或其药学上可接受的盐,其前药酯及其所有立体异构体的化合物,其中R 1和R 2相同或不同并且独立地选自氢, 烷基,芳基,环烷基,烯基,炔基,芳基烷基,杂芳基,杂芳基烷基或杂环烷基; Z选自-CON(R4)R4a,-CO2R4,-SO2N(R4)R4a,-SO2R4,CN和R4和R4a相同或不同,独立地选自氢,烷基,环烷基,芳基,芳基烷基, 杂芳基或杂芳基烷基或R4和R4a可以连接在一起形成杂环。 R4b选自氢,卤素,羟基,CN,OCF3,CF3,CONH2,SONH2,SO2CH3,NHCOCH3或NHCO2CH3; Q是取代的双环杂环。 还提供了使用这些化合物治疗胃肠蠕动障碍的方法。
    • 10. 发明授权
    • System and method for cross-platform application execution and display
    • 用于跨平台应用程序执行和显示的系统和方法
    • US09558021B2
    • 2017-01-31
    • US13618554
    • 2012-09-14
    • James Li
    • James Li
    • G06F9/455G06F9/445
    • G06F9/45533G06F9/445
    • A method is provided for downloading and running a non-native application designed for a source operating system (OS) on a target device having a target OS, the method includes: connecting the target device to a source device having the application in a paring operation; transferring a shareable provisional profile containing characteristics related to the application, including information on the source OS needed to run the application from the source device to the target device; and obtaining the source OS on the target device. Once the source OS is present on the target device, the method downloads the application from the source device to the target device, executes the source OS as a virtual machine on the target device, and runs the application within the source OS virtual machine.
    • 提供了一种用于下载和运行在具有目标OS的目标设备上为源操作系统(OS)设计的非本机应用的方法,所述方法包括:将目标设备连接到具有应用的源设备,其具有配对操作 ; 传送包含与应用有关的特征的可共享临时配置文件,包括将应用程序从源设备运行到目标设备所需的源OS的信息; 并在目标设备上获取源OS。 一旦目标设备上存在源操作系统,该方法将应用程序从源设备下载到目标设备,在目标设备上执行作为虚拟机的源OS,并在源OS虚拟机内运行应用程序。