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    • 10. 发明申请
    • Method for handling semiconductor layers in such a way as to thin same
    • 以相同的方式处理半导体层的方法
    • US20050124138A1
    • 2005-06-09
    • US10509007
    • 2003-03-26
    • Bernard AsparMarc ZussyJean-Frederic Clerc
    • Bernard AsparMarc ZussyJean-Frederic Clerc
    • H01L27/12H01L21/02H01L21/20H01L21/68H01L21/762H01L21/30H01L21/46
    • H01L21/2007B81C1/0038B81C2201/0191B81C2203/036H01L21/6835H01L21/76251H01L2221/68359Y10S438/977
    • This invention relates to a method for making a thin layer starting from a wafer comprising a front face with a given relief, and a back face, comprising steps consisting of: a) obtaining a support handle with a face acting as a bonding face; b) preparing the front face of the wafer, this preparation including incomplete planarisation of the front face of the wafer, to obtain a bonding energy E0 between a first value corresponding to the minimum bonding energy compatible with the later thinning step, and a second value corresponding to the maximum bonding energy compatible with the subsequent desolidarisation operation, the bonding energy E0 being such that E0=α.E, where E is the bonding energy that would be obtained if the front face of the wafer was completely planarised, α is the ratio between the incompletely planarised area of the front face of the wafer and the area of the front face of the wafer if it were completely planarised; c) solidarising the front face of the wafer on the bonding face of the support handle, by direct bonding; d) thinning the wafer starting from its back face until the thin layer is obtained; e) transferring the thin layer onto a usage support, involving separation from the support handle.
    • 本发明涉及一种用于制造从包括具有给定浮雕的正面的晶片开始的薄层的方法和背面,其包括以下步骤:a)获得具有用作接合面的面的支撑手柄; b)制备晶片的前表面,该制备包括晶片正面的不均匀平面化,以获得与对应于与该晶片相容的最小结合能相对应的第一值之间的结合能E 0 < 随后的稀化步骤,以及对应于与随后的去聚合操作相容的最大结合能力的第二值,结合能E 0 0使得E 0 < 其中E是如果晶片的正面完全平面化将获得的结合能,α是晶片正面的不完全平坦化面积与晶片正面面积之间的比率,如果是 完全平整 c)通过直接粘合将支撑手柄的接合面上的晶片的正面固定; d)从其背面开始使晶片变薄,直到获得薄层; e)将薄层转移到使用支撑件上,包括从支撑手柄分离。