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1. 发明申请

US20070090348A1 ELECTRONIC JUCTION DEVICES FEATURING REDOX ELECTRODES 有权
标题翻译：电子引出装置特色的REDOX电极
公开(公告)号：US20070090348A1
公开(公告)日：2007-04-26
申请号：US11536031
申请日：2006-09-28
申请人： Richard McCreery , Kenneth Mobley , Jing Wu
发明人： Richard McCreery , Kenneth Mobley , Jing Wu
IPC分类号： H01L29/08
CPC分类号： H01L51/0052 , B82Y10/00 , H01L51/0075 , H01L51/0595 , H01L51/4226 , Y10T428/261 , Y10T428/31504 , Y10T428/31678
摘要： The electronic properties of molecular junctions of the general type carbon/molecule/TiO2/Au as examples of “molecular heterojunctions” consisting of a molecular monolayer and a semiconducting oxide. Junctions containing fluorene bonded to pyrolyzed photoresist film (PPF) were compared to those containing Al2O3 instead of fluorene, and those with only the TiO2 layer. The responses to voltage sweep and pulse stimulation were strongly dependent on junction composition and temperature. A transient current response lasting a few milliseconds results from injection and trapping of electrons in the TiO2 layer, and occurred in all three junction types studied. Conduction in PPF/TiO2/Au junctions is consistent with space charge limited conduction at low voltage, then a sharp increase in current once the space charge fills all the traps. With fluorene present, there is a slower, persistent change in junction conductance which may be removed by a reverse polarity pulse. This “memory” effect is attributed to a redox process in the TiO2 which generates TiIII and/or TiII, which have much higher conductance than TiO2 due to the presence of conduction band electrons. The redox process amounts to “dynamic doping” of the TiO2 layer by imposed electric field. The memory effect arises from a combination of the properties of the molecular and oxide layers, and is a special property of the molecular heterojunction configuration.
摘要翻译：作为由分子单层和半导体氧化物组成的“分子异质结”的一般类型的碳/分子/ TiO 2 / Au的分子连接的电子性质。将含有与热解的光致抗蚀剂膜（PPF）结合的芴的接头与含有Al 2 O 3 O 3的芴代替芴进行比较，仅具有TiO 2 SUB>层。对电压扫描和脉冲刺激的响应强烈依赖于结的组成和温度。持续几毫秒的瞬态电流响应是由于TiO 2层中的电子的注入和捕获而产生的，并且发生在所研究的所有三种连接类型中。在PPF / TiO 2 / Au结中的传导与低电压下的空间电荷限制传导一致，然后一旦空间电荷填充所有陷阱，电流就会急剧增加。当存在芴时，会导致电阻较慢，持续的变化，这可能会被反极性脉冲除去。这种“记忆”效应归因于TiO 2中的氧化还原过程，其产生具有高得多的Ti III和/或Ti II II 由于存在导带电子，导电性比TiO 2高。氧化还原过程相当于通过施加的电场“TiO 2”层的“动态掺杂”。记忆效应是由分子和氧化物层的性质的组合产生的，并且是分子异质结构型的特殊性质。

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