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1. 发明授权

US06551905B1 Wafer adhesive for semiconductor dry etch applications 有权
标题翻译：用于半导体干蚀刻应用的晶片粘合剂
公开(公告)号：US06551905B1
公开(公告)日：2003-04-22
申请号：US09693716
申请日：2000-10-20
申请人： Michael E. Barsky , Harvey N. Rogers , Vladimir Medvedev , Yaochung Chen , Richard Lai
发明人： Michael E. Barsky , Harvey N. Rogers , Vladimir Medvedev , Yaochung Chen , Richard Lai
IPC分类号： H01L2130
CPC分类号： H01L21/6835 , H01L21/76898 , H01L23/481 , H01L2221/68318 , H01L2924/0002 , H01L2924/3025 , H01L2924/00
摘要： A method is provided for backside processing a semiconductor wafer (10) including applying a polymer based protective coating (16) on the wafer, depositing a barrier layer of ceramic (18) on the protective coating, and coating the ceramic layer with a thermoplastic based adhesive (20). Thereafter, the wafer (10) is bonded to a perforated substrate (22) and then lapped and polished to a desired thickness and patterned with an etch mask. A high temperature plasma etching process is then used to etch via holes in the wafer (10). After etching and subsequent backside processing, the adhesive layer (20) is dissolved in acetone to separate the wafer (10) from the substrate (22). The protective coating (16) is then dissolved with a solvent to separate the ceramic layer (18) from the finished wafer (10).
摘要翻译：提供了一种用于背面处理半导体晶片（10）的方法，包括在晶片上施加基于聚合物的保护涂层（16），在保护涂层上沉积陶瓷（18）的阻挡层，并用基于热塑性的涂层粘合剂（20）。此后，将晶片（10）接合到多孔基材（22）上，然后研磨并抛光至所需厚度并用蚀刻掩模图案化。然后使用高温等离子体蚀刻工艺来蚀刻晶片（10）中的通孔。在蚀刻和随后的背面处理之后，将粘合剂层（20）溶解在丙酮中以将晶片（10）与基板（22）分离。然后用溶剂溶解保护涂层（16）以将陶瓷层（18）与成品晶片（10）分离。

2. 发明授权

US06764573B2 Wafer thinning techniques 有权
标题翻译：晶圆薄化技术
公开(公告)号：US06764573B2
公开(公告)日：2004-07-20
申请号：US09977158
申请日：2001-10-11
申请人： Richard Lai , Harvey N. Rogers , Yaochung Chen , Michael E. Barsky
发明人： Richard Lai , Harvey N. Rogers , Yaochung Chen , Michael E. Barsky
IPC分类号： B08B302
CPC分类号： H01L21/30612 , H01L21/302 , H01L21/67086 , H01L21/67346
摘要： Apparatuses (10, 100), and methods of using same, for the simultaneous thinning of the backside surfaces of a plurality of semiconductor wafers (W) using a non-crystallographic and uniform etching process, are described. The apparatuses (10, 100) include a fixture (12, 102) having a plurality of horizontal receptacles (14, 16, 18, 20, 104, 106, 108, 110) for receiving the semiconductor wafers (W). The loaded fixtures (12, 102) are then immersed into an etchant solution (36, 146) that is capable of isotropically removing a layer of semiconductor material from the backside surface of the semiconductor wafers (W). The etchant solution (36, 146) is preferably heated to about 40° C.-50° C. and constantly stirred with a magnetic stirring bar (48, 158). Once a sufficient period of time has elapsed, the thinned semiconductor wafers (W) are removed from the etchant solution (36, 146). The apparatuses (10, 100) are capable of simultaneously thinning several semiconductor wafers (V) down to a final thickness of about 25 &mgr;m.
摘要翻译：描述了使用非结晶和均匀蚀刻工艺的装置（10,100）及其使用方法，用于同时薄化多个半导体晶片（W）的背面。装置（10,100）包括具有用于接收半导体晶片（W）的多个水平插座（14,16,18,20,104,106,108,110）的固定装置（12,102）。然后将装载的固定装置（12,102）浸入能够从半导体晶片（W）的背面各向同性地去除半导体材料层的蚀刻剂溶液（36,146）中。蚀刻剂溶液（36,146）优选加热至约40℃-50℃，并与磁力搅拌棒（48,158）持续搅拌。一旦经过足够的时间，就从蚀刻剂溶液（36,146）中除去变薄的半导体晶片（W）。装置（10,100）能够同时使多个半导体晶片（V）变薄至约25μm的最终厚度。

3. 发明授权

US6045978A Chemically treated photoresist for withstanding ion bombarded processing 失效
标题翻译：化学处理的光致抗蚀剂，用于耐受离子轰击处理
公开(公告)号：US6045978A
公开(公告)日：2000-04-04
申请号：US211700
申请日：1998-12-14
申请人： Dean Tran , William L. Jones , Harvey N. Rogers
发明人： Dean Tran , William L. Jones , Harvey N. Rogers
IPC分类号： G03F7/075 , H01L21/027 , G03C1/76
CPC分类号： G03F7/0755 , Y10S430/155
摘要： A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.
摘要翻译：一种感光光刻胶材料，其在图案化之后有效地用作离子蚀刻阻挡层。光致抗蚀剂组合物包括具有通式R 1 -COO-（CH 2）n -O-R 2的化合物和甲硅烷基化试剂的反应产物。

4. 发明授权

US5981143A Chemically treated photoresist for withstanding ion bombarded processing 失效
公开(公告)号：US5981143A
公开(公告)日：1999-11-09
申请号：US978735
申请日：1997-11-26
申请人： Dean Tran , William L. Jones , Harvey N. Rogers
发明人： Dean Tran , William L. Jones , Harvey N. Rogers
IPC分类号： G03F7/075 , H01L21/027 , G03C1/73
CPC分类号： G03F7/0755 , Y10S430/155
摘要： A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R.sub.1 --COO--(CH.sub.2).sub.n --O--R.sub.2 and a silylating agent.

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