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1. 发明授权

US6060818A SBAR structures and method of fabrication of SBAR.FBAR film processing techniques for the manufacturing of SBAR/BAR filters 失效
标题翻译： SBAR结构和制造SBAR.FBAR薄膜加工技术的制造SBAR / BAR过滤器的方法
公开(公告)号：US6060818A
公开(公告)日：2000-05-09
申请号：US88964
申请日：1998-06-02
申请人： Richard C. Ruby , Yogesh Desai , Donald R. Bradbury
发明人： Richard C. Ruby , Yogesh Desai , Donald R. Bradbury
IPC分类号： H04R17/10 , G10K9/122 , H03H3/02 , H03H3/08 , H03H9/17 , H03H9/25 , H01L41/08
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02133 , H03H9/585 , Y10T29/42
摘要： An acoustical resonator and a method for making the same. A resonator according to the present invention includes a layer of piezoelectric material sandwiched between first and second electrodes. The first electrode includes a conducting sheet having a RMS variation in height of less than 2 .mu.m. The resonator bridges a cavity in a substrate on which the resonator is constructed. The resonator is constructed by creating a cavity in the substrate and filling the same with a sacrificial material that can be rapidly removed from the cavity after the deposition of the various layers making up the resonator. The surface of the filled cavity is polished to provide a RMS variation in height of less than 0.5 .mu.m. The first electrode is deposited on the polished surface to a thickness that assures that the RMS variation in height of the metallic layer is less than 2 .mu.m. The piezoelectric layer is deposited on the first electrode and the second electrode is then deposited on the piezoelectric layer. The sacrificial material is then removed from the cavity by opening vias into the cavity and removing the material through the vias. The preferred sacrificial material is phophor-silica-glass.
摘要翻译：声谐振器及其制造方法。根据本发明的谐振器包括夹在第一和第二电极之间的压电材料层。第一电极包括高度小于2μm的RMS变化的导电片。谐振器桥接构成谐振器的衬底中的空腔。谐振器通过在衬底中形成空腔并用牺牲材料填充谐振器来构造，该牺牲材料可以在构成谐振器的各种层的沉积之后从腔中快速去除。抛光填充空腔的表面以提供小于0.5μm的RMS高度的变化。第一电极沉积在抛光表面上，以确保金属层的RMS高度小于2μm的厚度。压电层沉积在第一电极上，然后将第二电极沉积在压电层上。然后通过将通孔打开到空腔中并且通过通孔去除材料而将牺牲材料从腔中移除。优选的牺牲材料是磷石英玻璃。

2. 发明授权

US4971851A Silicon carbide film for X-ray masks and vacuum windows 失效
标题翻译：用于X射线掩模和真空窗的碳化硅膜
公开(公告)号：US4971851A
公开(公告)日：1990-11-20
申请号：US798779
申请日：1985-11-18
申请人： Armand P. Neukermans , Kuo L. Chiang , Frederic N. Schwettmann , Donald R. Bradbury
发明人： Armand P. Neukermans , Kuo L. Chiang , Frederic N. Schwettmann , Donald R. Bradbury
IPC分类号： G03F1/22 , G03F1/48 , G03F1/62
CPC分类号： G03F1/22 , G03F1/48 , G03F1/62 , Y10T428/24322
摘要： A layered structure for use in an X-ray membrane (pellicle) mask or a vacuum window is provided in which an intermediate amorphous layer such as silicon dioxide is grown on a silicon substrate which provides a stress relief medium and surface properties which enhance and improve subsequent process layers by breaking the epitaxial nature of these later deposited layers. Upon subsequent deposition of an inorganic overcoat, such as SiC, on the intermediate amorphous layer, the overcoat produces a nearly defect-free layer with a substantially reduced stress of suitable quality for X-ray lithography mask fabrication. Furthermore, additional alternating layers of a silicon carbide film and an intermediate inorganic layer, such as silicon nitride, can be deposited to obtain an even smoother silicon carbide surface and stronger structure.
摘要翻译：提供了用于X射线膜（防护薄膜）掩模或真空窗的分层结构，其中在硅衬底上生长诸如二氧化硅的中间非晶层，其提供应力消除介质和增强和改善的表面性质通过破坏这些稍后沉积的层的外延性质来实现后续工艺层。随后在中间非晶层上沉积诸如SiC的无机外涂层，外涂层产生几乎无缺陷的层，其具有基本上减少的对X射线光刻掩模制造的合适质量的应力。此外，可以沉积碳化硅膜和中间无机层（例如氮化硅）的附加交替层以获得更平滑的碳化硅表面和更强的结构。

3. 发明授权

US4608326A Silicon carbide film for X-ray masks and vacuum windows 失效
公开(公告)号：US4608326A
公开(公告)日：1986-08-26
申请号：US804331
申请日：1985-12-04
申请人： Armand P. Neukermans , Kuo L. Chiang , Frederic N. Schwettmann , Donald R. Bradbury
发明人： Armand P. Neukermans , Kuo L. Chiang , Frederic N. Schwettmann , Donald R. Bradbury
IPC分类号： G03F1/22 , G03F1/48 , G03F1/62 , G03F9/00
CPC分类号： G03F1/22 , G03F1/48 , G03F1/62 , Y10S430/167
摘要： A layered structure for use in an X-ray membrane (pellicle) mask or a vacuum window is provided in which an intermediate amorphous layer such as silicon dioxide is grown on a silicon substrate which provides a stress relief medium and surface properties which enhance and improve subsequent process layers by breaking the epitaxial nature of these later deposited layers. Upon subsequent deposition of an inorganic overcoat, such as SiC, on the intermediate amorphous layer, the overcoat produces a nearly defect-free layer with a substantially reduced stress of suitable quality for X-ray lithography mask fabrication. Furthermore, additional alternating layers of a silicon carbide film and an intermediate inorganic layer, such as silicon nitride, can be deposited to obtain an even smoother silicon carbide surface and stronger structure.

4. 发明授权

US4507158A Trench isolated transistors in semiconductor films 失效
标题翻译：沟槽隔离晶体管在半导体薄膜
公开(公告)号：US4507158A
公开(公告)日：1985-03-26
申请号：US522767
申请日：1983-08-12
申请人： Theodore I. Kamins , Donald R. Bradbury , Clifford I. Drowley
发明人： Theodore I. Kamins , Donald R. Bradbury , Clifford I. Drowley
IPC分类号： H01L27/08 , H01L21/20 , H01L21/205 , H01L21/76 , H01L21/762 , H01L21/763 , H01L29/78 , H01L29/786 , H01L21/95
CPC分类号： H01L21/76 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L21/76264 , H01L21/763 , H01L21/76278 , H01L21/76283 , Y10S148/026 , Y10S148/05 , Y10S148/085
摘要： A method for trench isolation of a silicon island for device fabrication using only conventional very large scale integration (VLSI) techniques is provided. The combination of the sidewall isolation achieved with the trench isolation and the underlying oxide film create a totally dielectrically isolated structure without the possibility of latch-up between adjacent devices.
摘要翻译：提供了用于仅使用传统的大规模集成（VLSI）技术的用于器件制造的硅岛的沟槽隔离的方法。通过沟槽隔离和下面的氧化膜实现的侧壁隔离的组合产生完全介电隔离的结构，而不会在相邻器件之间产生闩锁。

5. 发明授权

US5200360A Method for reducing selectivity loss in selective tungsten deposition 失效
标题翻译：降低选择性钨沉积选择性损失的方法
公开(公告)号：US5200360A
公开(公告)日：1993-04-06
申请号：US792520
申请日：1991-11-12
申请人： Donald R. Bradbury , Gary W. Ray
发明人： Donald R. Bradbury , Gary W. Ray
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L21/76879 , Y10S438/906 , Y10S438/978
摘要： A method of forming a plug for electrical connection between two metallic layers on an integrated circuit substrate includes retaining an antinucleation resist layer atop an insulator layer through which the plug is to be formed. After a contact hole is etched through the insulator layer, the antinucleation resist layer is baked. Cleaning of an area exposed by said contact hole in order to minimize contact resistance occurs during a two step process of argon sputter etching and oxygen plasma descumming the exposed area. Because the argon sputter etch and the oxygen plasma descum uncover an annular region about the contact hole, a concentration of phosphorous within the insulator layer and a low temperature selective deposition are used to reduce the occurrence of unwanted nucleation. After selective deposition, the antinucleation resist layer is stripped and an upper metallic layer is formed.
摘要翻译：形成用于集成电路基板上的两个金属层之间的电连接的插头的方法包括：在要形成插头的绝缘体层的顶部保持防核抗蚀剂层。在通过绝缘体层蚀刻接触孔之后，烘焙抗核抗蚀剂层。在氩溅射蚀刻和氧气等离子体除去暴露区域的两步骤过程中，清洁由所述接触孔暴露的区域以便最小化接触电阻。由于氩溅射蚀刻和氧等离子体除去露出围绕接触孔的环形区域，所以使用绝缘体层内的磷浓度和低温选择性沉积来减少不想要的成核的发生。选择性沉积后，剥离抗核素层，形成上层金属层。

6. 发明授权

US4522662A CVD lateral epitaxial growth of silicon over insulators 失效
标题翻译： CVD在绝缘体上的CVD侧向外延生长
公开(公告)号：US4522662A
公开(公告)日：1985-06-11
申请号：US522804
申请日：1983-08-12
申请人： Donald R. Bradbury , Chi-Wing Tsao , Theodore I. Kamins
发明人： Donald R. Bradbury , Chi-Wing Tsao , Theodore I. Kamins
IPC分类号： H01L27/00 , H01L21/20 , H01L21/205 , H01L21/84 , H01L21/76
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10S117/913 , Y10S148/025 , Y10S148/026 , Y10S148/05
摘要： A method for growing Silicon On Insulator (SOI) films using only conventional very large scale integration (VLSI) techniques is provided. By sequentially varying the flow of HCL gas during the vertical-growth, lateral-overgrowth, coalescence, and planarization stages of the epitaxial deposition process allows the formation of high-quality SOI films on wider oxide stripes suitable for general transistor applications.
摘要翻译：提供了仅使用传统的大规模集成（VLSI）技术来生长硅绝缘体（SOI）膜的方法。通过在垂直生长期间顺序地改变HCL气体的流动，外延沉积过程的横向过度生长，聚结和平坦化阶段允许在适用于一般晶体管应用的更宽的氧化物条纹上形成高质量的SOI膜。

7. 发明授权

US4455561A Electron beam driven ink jet printer 失效
标题翻译：电子束驱动喷墨打印机
公开(公告)号：US4455561A
公开(公告)日：1984-06-19
申请号：US443710
申请日：1982-11-22
申请人： James H. Boyden , Donald R. Bradbury , Garrett A. Garrettson , Timothy R. Groves , Lawrence R. Hanlon , Armand P. Neukermans
发明人： James H. Boyden , Donald R. Bradbury , Garrett A. Garrettson , Timothy R. Groves , Lawrence R. Hanlon , Armand P. Neukermans
IPC分类号： B41J2/05 , B41J2/14 , G01D15/18
CPC分类号： B41J2/14104 , B41J2002/14387
摘要： A new type of thermal ink jet print head is provided which is driven by an electron beam. The print head is constructed of an electron permeable thin film (electron window) which in one embodiment, has on one of its surfaces a plurality of electron absorbing (heater) pads that are in thermal contact with an ink reservoir. As electrons from a CRT traverse the thin film and are absorbed by a pad, they introduce an extremely large and rapid temperature increase in the pad. As a result, a sufficient amount of thermal energy is absorbed by the ink to cause a vapor explosion within the ink, thereby ejecting ink droplets from a nearby orifice in the ink reservoir. In another embodiment, the electrons traverse the window and are absorbed in the ink rather than in pads, and in another embodiment the electrons are absorbed directly in the window itself.
摘要翻译：提供一种由电子束驱动的新型热喷墨打印头。打印头由电子透射薄膜（电子窗）构成，在一个实施例中，其一个表面上具有与墨水储存器热接触的多个电子吸收（加热器）垫。当来自CRT的电子穿过薄膜并被衬垫吸收时，它们在衬垫中引入非常大且快速的温度升高。结果，足够量的热能被墨水吸收，从而在墨水内引起蒸汽爆炸，从而从墨水容器中的附近孔口喷出墨滴。在另一个实施例中，电子穿过窗口并被吸收在墨中而不是在垫中，而在另一个实施例中，电子直接被吸收在窗口本身中。

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