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    • 1. 发明授权
    • Self-powered sensor system for monitoring tire pressure
    • 用于监测轮胎压力的自供电传感器系统
    • US08742912B2
    • 2014-06-03
    • US12647305
    • 2009-12-24
    • Richard Austin Blanchard
    • Richard Austin Blanchard
    • B60C23/00
    • B60C23/041B60C23/0411B60C23/0413B60C23/0491
    • A self-powered tire pressure sensor device. The sensor device includes a power circuit, an air pressure measurement sensor, a signal circuit and a wireless transmission circuit. The power circuit converts mechanical acceleration experienced by the device into electrical potential using an electromechanical transducer. Mechanical acceleration due to collisions between the mobile sensor device and the wall of the tire while the tire is in motion cause the transducer to emit a small electrical charge. An electrical potential storage element in the power circuit accumulates and stores the charge as electrical potential. Alternatively the power circuit receives and converts electromagnetic energy into electrical potential. The electrical potential powers an air pressure measurement sensor within the tire. A signal circuit and wireless transmission circuit transmit the measurement to a chassis-mounted receiver, which makes the tire pressure measurement available to systems remote from the tire.
    • 一种自供电的轮胎压力传感器装置。 传感器装置包括电源电路,空气压力测量传感器,信号电路和无线传输电路。 电源电路使用机电换能器将器件所经历的机械加速转换为电势。 当轮胎运动时,由于移动传感器装置与轮胎壁之间的碰撞引起的机械加速,导致换能器发出小的电荷。 电源电路中的电位存储元件蓄积并将电荷存储为电位。 或者,电源电路接收并将电磁能转换成电势。 电位为轮胎内的气压测量传感器供电。 信号电路和无线传输电路将测量传输到机架安装的接收器,这使得轮胎压力测量可用于远离轮胎的系统。
    • 2. 发明申请
    • SELF-POWERED SENSOR SYSTEM FOR MONITORING TIRE PRESSURE
    • 用于监测轮胎压力的自供电传感器系统
    • US20100164705A1
    • 2010-07-01
    • US12647305
    • 2009-12-24
    • Richard Austin Blanchard
    • Richard Austin Blanchard
    • B60C23/02
    • B60C23/041B60C23/0411B60C23/0413B60C23/0491
    • A self-powered tire pressure sensor device. The sensor device includes a power circuit, an air pressure measurement sensor, a signal circuit and a wireless transmission circuit. The power circuit converts mechanical acceleration experienced by the device into electrical potential using an electromechanical transducer. Mechanical acceleration due to collisions between the mobile sensor device and the wall of the tire while the tire is in motion cause the transducer to emit a small electrical charge. An electrical potential storage element in the power circuit accumulates and stores the charge as electrical potential. Alternatively the power circuit receives and converts electromagnetic energy into electrical potential. The electrical potential powers an air pressure measurement sensor within the tire. A signal circuit and wireless transmission circuit transmit the measurement to a chassis-mounted receiver, which makes the tire pressure measurement available to systems remote from the tire.
    • 一种自供电的轮胎压力传感器装置。 传感器装置包括电源电路,空气压力测量传感器,信号电路和无线传输电路。 电源电路使用机电换能器将器件所经历的机械加速转换为电势。 当轮胎运动时,由于移动传感器装置与轮胎壁之间的碰撞引起的机械加速,导致换能器发出小的电荷。 电源电路中的电位存储元件蓄积并将电荷存储为电位。 或者,电源电路接收并将电磁能转换成电势。 电位为轮胎内的气压测量传感器供电。 信号电路和无线传输电路将测量传输到机架安装的接收器,这使得轮胎压力测量可用于远离轮胎的系统。
    • 3. 发明授权
    • Isolated vertical power device structure with both N-doped and P-doped trenches
    • 具有N掺杂和P掺杂沟槽的隔离垂直功率器件结构
    • US07825492B2
    • 2010-11-02
    • US12259834
    • 2008-10-28
    • Richard Austin Blanchard
    • Richard Austin Blanchard
    • H01L29/732
    • H01L29/74H01L29/0634H01L29/0657H01L29/0692H01L29/0834H01L29/66363H01L29/87
    • A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction region of the device. In a front surface of the substrate, front isolation wall trenches are formed around the conduction region. Thereafter, a film containing a second type dopant is deposited in the front and back isolation wall trenches. In the conduction region on the back surface, conduction region trenches are formed inside the perimeter of the isolation wall trenches. A first type dopant is deposited in the conduction region trenches. The dopants are diffused from the conduction region trenches and isolation wall trenches to form a first conductivity type conduction region structure and a second conductivity type isolation wall.
    • 一种用于制造隔离垂直功率器件的方法包括在第一导电类型衬底的背表面中形成围绕器件的导电区域的后隔离壁沟槽。 在基板的前表面上,在导电区域周围形成前隔离壁沟槽。 此后,在前后隔离壁沟槽中沉积含有第二种掺杂剂的膜。 在背表面的导电区域中,导电区沟槽形成在隔离壁沟槽周边的内部。 第一种掺杂剂沉积在导电区沟槽中。 掺杂剂从导电区沟槽和隔离壁沟槽扩散以形成第一导电类型的导电区域结构和第二导电型隔离壁。
    • 5. 发明申请
    • ISOLATED VERTICAL POWER DEVICE STRUCTURE WITH BOTH N-DOPED AND P-DOPED TRENCHES
    • 分离的垂直功率器件结构,具有两个N型和P型掺杂的TRINCHES
    • US20090051001A1
    • 2009-02-26
    • US12259834
    • 2008-10-28
    • Richard Austin Blanchard
    • Richard Austin Blanchard
    • H01L27/02
    • H01L29/74H01L29/0634H01L29/0657H01L29/0692H01L29/0834H01L29/66363H01L29/87
    • A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction region of the device. In a front surface of the substrate, front isolation wall trenches are formed around the conduction region. Thereafter, a film containing a second type dopant is deposited in the front and back isolation wall trenches. In the conduction region on the back surface, conduction region trenches are formed inside the perimeter of the isolation wall trenches. A first type dopant is deposited in the conduction region trenches. The dopants are diffused from the conduction region trenches and isolation wall trenches to form a first conductivity type conduction region structure and a second conductivity type isolation wall.
    • 一种用于制造隔离垂直功率器件的方法包括在第一导电类型衬底的背表面中形成围绕器件的导电区域的后隔离壁沟槽。 在基板的前表面上,在导电区域周围形成前隔离壁沟槽。 此后,在前后隔离壁沟槽中沉积含有第二种掺杂剂的膜。 在背表面的导电区域中,导电区沟槽形成在隔离壁沟槽周边的内部。 第一种掺杂剂沉积在导电区沟槽中。 掺杂剂从导电区沟槽和隔离壁沟槽扩散以形成第一导电类型的导电区域结构和第二导电型隔离壁。
    • 6. 发明授权
    • Isolated vertical power device structure with both N-doped and P-doped trenches
    • 具有N掺杂和P掺杂沟槽的隔离垂直功率器件结构
    • US07442584B2
    • 2008-10-28
    • US11284979
    • 2005-11-21
    • Richard Austin Blanchard
    • Richard Austin Blanchard
    • H01L21/332
    • H01L29/74H01L29/0634H01L29/0657H01L29/0692H01L29/0834H01L29/66363H01L29/87
    • A method for manufacturing an isolated vertical power device includes forming, in a back surface of a first conductivity type substrate, back isolation wall trenches that surround a conduction region of the device. In a front surface of the substrate, front isolation wall trenches are formed around the conduction region. Thereafter, a film containing a second type dopant is deposited in the front and back isolation wall trenches. In the conduction region on the back surface, conduction region trenches are formed inside the perimeter of the isolation wall trenches. A first type dopant is deposited in the conduction region trenches. The dopants are diffused from the conduction region trenches and isolation wall trenches to form a first conductivity type conduction region structure and a second conductivity type isolation wall.
    • 一种用于制造隔离垂直功率器件的方法包括在第一导电类型衬底的背表面中形成围绕器件的导电区域的后隔离壁沟槽。 在基板的前表面上,在导电区域周围形成前隔离壁沟槽。 此后,在前后隔离壁沟槽中沉积含有第二种掺杂剂的膜。 在背表面的导电区域中,导电区沟槽形成在隔离壁沟槽周边的内部。 第一种掺杂剂沉积在导电区沟槽中。 掺杂剂从导电区沟槽和隔离壁沟槽扩散以形成第一导电类型的导电区域结构和第二导电型隔离壁。
    • 7. 发明授权
    • Semiconductor device having a Schottky diode
    • 具有肖特基二极管的半导体器件
    • US06724039B1
    • 2004-04-20
    • US09144535
    • 1998-08-31
    • Richard Austin Blanchard
    • Richard Austin Blanchard
    • H01L2976
    • H01L29/7806H01L29/7802H01L29/872
    • A semiconductor device includes a semiconductor substrate having a first conductivity and a semiconductor layer disposed on the substrate and also having the first conductivity. A recess is disposed in the layer and has a sidewall and a bottom. A gate insulator is disposed on the layer and extends to the sidewall of the recess, and a gate is disposed on the gate insulator. A body region is disposed in the semiconductor layer beneath the gate, has a second conductivity, and is contiguous with the sidewall of the recess. A source region is disposed in the body region, has the first conductivity, and is contiguous with the sidewall. A Schottky contact is disposed on the bottom of the recess, and a source metallization is disposed on the Schottky contact and on the sidewall of the recess.
    • 半导体器件包括具有第一导电性的半导体衬底和设置在衬底上并具有第一导电性的半导体层。 凹槽设置在该层中并且具有侧壁和底部。 栅极绝缘体设置在层上并延伸到凹槽的侧壁,并且栅极设置在栅极绝缘体上。 体区域设置在栅极下方的半导体层中,具有第二导电性,并且与凹部的侧壁邻接。 源区域设置在身体区域中,具有第一导电性并且与侧壁邻接。 肖特基接触件设置在凹部的底部,并且源极金属化设置在肖特基接触件和凹部的侧壁上。