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1. 发明授权

US4462970A Process for preparation of water-free oxychloride material 失效
标题翻译：无氯氧化物材料的制备方法
公开(公告)号：US4462970A
公开(公告)日：1984-07-31
申请号：US481594
申请日：1983-04-04
申请人： Ricardo C. Pastor , Antonio C. Pastor , Luisa E. Gorre , Remedios K. Chew
发明人： Ricardo C. Pastor , Antonio C. Pastor , Luisa E. Gorre , Remedios K. Chew
IPC分类号： C01F17/00 , C03C1/00
CPC分类号： C01F17/0068 , C03C1/00
摘要： The specification discloses a process for forming a water-free rare earth oxychloride powder by exposing a water-containing rare earth oxide powder to a reactive atmosphere of chlorine and oxygen at 1000.degree. C. for 24 hours to remove water impurities from the oxide powder and to simultaneously convert the oxide powder to the oxychloride powder.
摘要翻译：本说明书公开了一种通过在1000℃下将含水稀土氧化物粉末暴露于氯和氧的反应气氛中24小时以形成无水稀土氧化氯粉末以从氧化物粉末中除去水杂质的方法，同时将氧化物粉末转化为氯氧化物粉末。

2. 发明授权

US4465656A Process for preparation of water-free oxide material 失效
标题翻译：无水氧化物材料的制备方法
公开(公告)号：US4465656A
公开(公告)日：1984-08-14
申请号：US481592
申请日：1982-04-04
申请人： Ricardo C. Pastor , Antonio C. Pastor , Luisa E. Gorre , Remedios K. Chew
发明人： Ricardo C. Pastor , Antonio C. Pastor , Luisa E. Gorre , Remedios K. Chew
IPC分类号： C01F17/00 , C03C1/00 , C01B33/18 , C01G17/02
CPC分类号： C03C1/00 , C01F17/0068
摘要： The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength range. In one process, a water-free oxide is prepared by reacting a chosen nonpolar compound containing the desired metal or non-metal with an aprotic oxygen-containing compound to form the oxide as a precipitate in a chosen aprotic nonaqueous liquid solvent which provides a water-free environment during the formation of the oxide, to prevent the inclusion of water and water-derived impurities in the oxide as formed. Then the oxide-containing precipitate is subjected to a reactive atmosphere process by exposing the powder to a chosen gas phase reactive atmosphere comprising atomic halogen at a predetermined elevated temperature for a predetermined period of time, to remove traces of water and water-derived impurities from the oxide.
摘要翻译：该说明书公开了用于形成无水金属或非金属氧化物材料的新的和改进的方法，然后将其熔化并形成为玻璃体或晶体形式的光学部件，其在近红外波长中没有吸附氢杂质范围。在一个方法中，通过使选择的含有所需金属或非金属的非极性化合物与非质子含氧化合物反应来制备无水氧化物，以在选择的非质子非水性液体溶剂中形成沉淀物的氧化物，所述非质子非水性非水液体溶剂提供水在氧化物形成过程中的无环境，以防止在形成的氧化物中包含水和水源杂质。然后通过在预定的高温下将粉末暴露于包含原子卤素的所选择的气相反应性气氛预定的时间内，将含氧化物的沉淀物进行反应性气氛处理，从而将痕量的水和水衍生的杂质从氧化物。

3. 发明授权

US4462974A Process for preparation of water-free oxide material 失效
标题翻译：无水氧化物材料的制备方法
公开(公告)号：US4462974A
公开(公告)日：1984-07-31
申请号：US481591
申请日：1983-04-04
申请人： Ricardo C. Pastor , Antonio C. Pastor , Luisa E. Gorre , Remedios K. Chew
发明人： Ricardo C. Pastor , Antonio C. Pastor , Luisa E. Gorre , Remedios K. Chew
IPC分类号： C01F17/00 , C03C1/00 , C01B33/18 , C01G17/02 , C01G23/047 , C01G25/02
CPC分类号： C03C1/00 , C01F17/0068
摘要： The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength range. In one process a water-free oxide is prepared by reacting a chosen organic compound containing oxygen bonded to an atom of the metal or non-metal, with a chosen organic acid anhydride to form an intermediate product which is then decomposed to form the desired oxide and to simultaneously regenerate the organic acid anhydride. The regenerated organic acid anhydride reacts with and removes traces of water and water-derived impurities during the formation of the desired oxide and prevents the inclusion of these impurities in the oxide as formed.
摘要翻译：该说明书公开了用于形成无水金属或非金属氧化物材料的新的和改进的方法，然后将其熔化并形成为玻璃体或晶体形式的光学部件，其在近红外波长中没有吸附氢杂质范围。在一个方法中，通过使选择的含有键合到金属或非金属原子上的氧的有机化合物与选择的有机酸酐反应以形成中间产物，然后将其分解形成所需的氧化物，从而制备无水氧化物并同时再生有机酸酐。再生的有机酸酐在形成期望的氧化物期间与水和水衍生的杂质反应并除去痕量的水，并防止这些杂质包含在形成的氧化物中。

4. 发明授权

US4429009A Process for surface conversion of vitreous silica to cristobalite 失效
标题翻译：二氧化硅到方英石的表面转化工艺
公开(公告)号：US4429009A
公开(公告)日：1984-01-31
申请号：US315597
申请日：1981-10-30
申请人： Ricardo C. Pastor , Luisa E. Gorre , Antonio C. Pastor , Remedios K. Chew
发明人： Ricardo C. Pastor , Luisa E. Gorre , Antonio C. Pastor , Remedios K. Chew
IPC分类号： C03C23/00 , C30B15/10 , B32B17/00
CPC分类号： C03C23/00 , C30B15/10 , Y10T428/315
摘要： The specification discloses a process for converting the surface layer of a body of vitreous silica to the more stable crystalline form of silica known as cristobalite. The surface of the body of vitreous silica is exposed to a gas phase reactive atmosphere comprising atomic iodine at a predetermined elevated temperature for a predetermined period of time to convert the surface layer of the vitreous silica to polycrystalline cristobalite and thus passivate and enhance the stability of the treated surface. The disclosed process is particularly useful for forming improved crucibles, such as those used in crystal growth from a melt.
摘要翻译：本说明书公开了一种将玻璃状二氧化硅体的表面层转化为更稳定的称为方英石的二氧化硅结晶形式的方法。将玻璃状二氧化硅体的表面在预定的高温下暴露于包含原子碘的气相反应性气氛预定的时间，以将玻璃状二氧化硅的表面层转化为多晶方英石，从而钝化并增强了处理过的表面。所公开的方法对于形成改进的坩埚特别有用，例如用于熔体晶体生长的坩埚。

5. 发明授权

US4409260A Process for low-temperature surface layer oxidation of a semiconductor substrate 失效
标题翻译：半导体衬底的低温表面层氧化的方法
公开(公告)号：US4409260A
公开(公告)日：1983-10-11
申请号：US392499
申请日：1982-06-28
申请人： Ricardo C. Pastor , Remedios K. Chew , Luisa E. Gorre
发明人： Ricardo C. Pastor , Remedios K. Chew , Luisa E. Gorre
IPC分类号： C23C8/14 , H01L21/316
CPC分类号： H01L21/02238 , C23C8/14 , H01L21/02255 , H01L21/31662
摘要： The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a temperature of about 750.degree. C. or lower in the presence of a chosen oxygen-containing precursor and a chosen gas phase halogen-containing molecular reactant which reacts with the oxygen-containing precursor to form atomic oxygen. The substrate is heated in the presence of these reactants for a period of time sufficient to enable the atomic oxygen to react with the surface atoms of the wafer and thus form the coherent uniform oxide layer. The temperature of about 750.degree. C. is sufficiently low to avoid adverse effects, such as dopant migration, on the wafer. In a preferred embodiment of the present invention, a coherent, uniform layer of silicon dioxide is formed on the surface of a silicon wafer.
摘要翻译：本说明书公开了一种在所选择的半导体材料的表面上形成相干均匀的氧化物层的方法，该方法是在所选择的含氧物质存在下，在约750℃或更低的温度下加热所选半导体材料的晶片前体和选定的含有气体的含卤素的分子反应物，其与含氧前体反应形成原子氧。在这些反应物的存在下，将衬底加热足够长的时间以使原子氧与晶片的表面原子反应，从而形成相干均匀的氧化物层。约750℃的温度足够低，以避免在晶片上的不利影响，例如掺杂剂迁移。在本发明的优选实施例中，在硅晶片的表面上形成相干均匀的二氧化硅层。

6. 发明授权

US4267205A Process for low-temperature surface layer oxidation of a semiconductor substrate 失效
标题翻译：半导体衬底的低温表面层氧化的方法
公开(公告)号：US4267205A
公开(公告)日：1981-05-12
申请号：US66606
申请日：1979-08-15
申请人： Ricardo C. Pastor , Remedios K. Chew , Luisa E. Gorre
发明人： Ricardo C. Pastor , Remedios K. Chew , Luisa E. Gorre
IPC分类号： C23C8/14 , H01L21/316 , B05D5/12
CPC分类号： H01L21/02238 , C23C8/14 , H01L21/02255 , H01L21/31662
摘要： The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a predetermined elevated temperature in an atmosphere conducive to the formation of atomic oxygen for a period of time sufficient to enable the atomic oxygen to react with the surface atoms of the wafer and thus form the coherent, uniform oxide layer. The predetermined elevated temperature is sufficiently low to avoid adverse effects, such as dopant migration, on the wafer. In a preferred embodiment of the present invention, a coherent, uniform layer of silicon dioxide is formed on the surface of a silicon wafer by heating the wafer in a vapor mixture of iodine and water at a temperature of 750.degree. C. and one atmosphere of pressure.
摘要翻译：本说明书公开了一种用于在选定的半导体材料的表面上形成相干，均匀的氧化物层的方法，该方法是在预定的升高的温度下，在有助于形成原子氧的气氛中加热所选半导体材料的晶片一段时间足以使原子氧与晶片的表面原子反应，从而形成相干均匀的氧化物层。预定的升高的温度足够低以避免在晶片上的不利影响，例如掺杂剂迁移。在本发明的优选实施例中，通过在750℃的温度下将碘和水的蒸气混合物中的晶片加热，在硅晶片的表面上形成相干均匀的二氧化硅层，压力。

7. 发明授权

US4519986A Process for preparation of ultrapure thorium fluoride 失效
标题翻译：制备超纯钍氟的方法
公开(公告)号：US4519986A
公开(公告)日：1985-05-28
申请号：US343637
申请日：1982-01-28
申请人： Ricardo C. Pastor , Remedios K. Chew
发明人： Ricardo C. Pastor , Remedios K. Chew
IPC分类号： C01B9/08 , C01F15/00 , C01F17/00 , C01G21/16 , C03C13/04
CPC分类号： C01G21/16 , C01B9/08 , C01F15/00 , C01F17/0062
摘要： The specification discloses a process for the preparation of ultrapure thorium fluoride (ThF.sub.4) having minimized water content and consequent maximized optical transmission of 10.6 micrometer radiation. First, thorium oxide is reacted with aqueous hydrofluoric acid to form a solid reaction product, which is then dried under controlled heating to form a hydrated thorium fluoride with a predetermined amount of hydration, namely ThF.sub.4.xH.sub.2 O where x is equal to 0.39. The hydrated thorium fluoride is exposed to a reactive atmosphere of hydrofluoric acid vapor and a selected fluoride compound in the gas phase at elevated temperature for a predetermined period of time. The reactive atmosphere removes substantially all of the water and water-derived impurities from the hydrated thorium fluoride to produce ultrapure thorium fluoride which is highly transmissive to 10.6 micrometer radiation.
摘要翻译：该说明书公开了一种制备超纯氟化钍（ThF4）的方法，其具有最小化的水分含量，从而最大化了10.6微米辐射的光学透射。首先，将氧化钍与氢氟酸水溶液反应以形成固体反应产物，然后在受控加热下干燥以形成具有预定量水合的水合钍氟化物，即ThF4.xH 2 O，其中x等于0.39。在高温下将水合钍氟化物在气相中暴露于氢氟酸蒸气和选择的氟化物的反应气氛预定的时间。反应性气氛基本上从水合钍氟中除去水和水的杂质，以产生对10.6微米辐射高度透射的超纯钍氟化物。

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