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    • 2. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US06458713B1
    • 2002-10-01
    • US09604726
    • 2000-06-28
    • Nobuhide YamadaRempei NakataHideshi MiyajimaMotonobu Kawai
    • Nobuhide YamadaRempei NakataHideshi MiyajimaMotonobu Kawai
    • H01L2131
    • H01L21/02126H01L21/02216H01L21/02282H01L21/02337H01L21/3122H01L21/316
    • A method of forming a film, which comprises the steps of coating a liquid raw material comprising a precursor of film-forming material dissolved in a solvent, on a surface of substrate, and forming a solid film on the surface of substrate by subjecting the substrate to a plurality of heat treatments differing in heating temperature from each other. The heat treatments differing heating temperatures from each other are performed over the same single hot plate. The film to be formed may be an organic SOG film. There is also disclosed a method of manufacturing a semiconductor device, which comprises the steps of coating a liquid raw material for forming an organosilicon oxide film on a surface of semiconductor substrate, and subjecting the semiconductor substrate to a first heat treatment where the semiconductor substrate is heated in an oxidizing atmosphere and at a temperature of 200° C. or more.
    • 一种形成膜的方法,其包括以下步骤:将包含溶解在溶剂中的成膜材料的前体的液体原料涂布在基材的表面上,并通过对基材进行处理而在基材表面上形成固体膜 涉及加热温度彼此不同的多个热处理。 在相同的单个热板上进行彼此不同的加热温度的热处理。 待形成的膜可以是有机SOG膜。 还公开了一种制造半导体器件的方法,其包括以下步骤:在半导体衬底的表面上涂覆用于形成有机氧化硅膜的液体原料,并对半导体衬底进行第一热处理,其中半导体衬底是 在氧化气氛中并在200℃以上的温度下加热。
    • 8. 发明授权
    • Manufacturing method for semiconductor device
    • 半导体器件的制造方法
    • US07785984B2
    • 2010-08-31
    • US11812478
    • 2007-06-19
    • Nobuhide YamadaRempei Nakata
    • Nobuhide YamadaRempei Nakata
    • H01L21/76
    • H01L21/31612C23C16/045C23C16/401C23C16/463C23C16/56H01L21/02164H01L21/022H01L21/02271H01L21/02274H01L21/02304
    • A manufacturing method for a semiconductor device includes generating on a substrate liquid-phase silanol having fluidity by causing a source gas made of a material containing silicon to react with a source gas made of a material containing oxygen, introducing the silanol into a first recess having an aspect ratio of a predetermined value wholly, and introducing the silanol into a space from a bottom to an intermediate portion in a second recess having an aspect ratio lower than the predetermined value, the first and second recesses are provided in the substrate, burying a silicon oxide film in the first recess and providing the silicon oxide film in the second recess by converting the silanol into the silicon oxide film by dehydrating condensation, and providing a dielectric film having film density higher than that of the silicon oxide film on the silicon oxide film.
    • 一种半导体装置的制造方法,其特征在于,在具有流动性的基板液相硅烷醇上生成由含有硅的材料制成的源气体与由氧气构成的原料气体反应,将硅烷醇引入到具有 整个长宽比为预定值,并且在具有低于预定值的纵横比的第二凹槽中将硅烷醇从底部引导到中间部分的空间中,第一和第二凹部设置在基板中, 在第一凹部中形成氧化硅膜,通过将脱水缩合将硅烷醇转化为氧化硅膜,在第二凹部中设置氧化硅膜,在氧化硅上形成膜密度高于氧化硅膜的电介质膜 电影。