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1. 发明授权

US06869508B2 Physical vapor deposition apparatus and process 有权
标题翻译：物理气相沉积装置及工艺
公开(公告)号：US06869508B2
公开(公告)日：2005-03-22
申请号：US10063808
申请日：2002-05-15
申请人： Ramgopal Darolia , Reed Roeder Corderman , Joseph David Rigney , Richard Arthur Nardi, Jr. , Michael James Weimer
发明人： Ramgopal Darolia , Reed Roeder Corderman , Joseph David Rigney , Richard Arthur Nardi, Jr. , Michael James Weimer
IPC分类号： C23C14/16 , C23C14/24 , C23C14/30 , C23C14/34 , C23C16/00 , H05H1/24
CPC分类号： B82Y10/00 , C23C14/16 , C23C14/246 , C23C14/30
摘要： A PVD process and apparatus (120) for depositing a coating (132) from multiple sources (110, 111) of different materials. The process and apparatus (120) are particulaity intended to deposit a beta-nickel aluminide coating (132) containing one or more elements whose vapor pressures are lower than NiAl. The PVD process and apparatus (120) entail feeding at least two materials (110, 111) into a coating chamber (122) and evaporating the materials (110, 111) at different rates from separate molten pools (114, 115) thereof. Articles (130) to be coated are suspended within the coating chamber (122), and transported with a support apparatus (118) relative to the two molten pools (114, 115) so as to deposit a coating (132) with a controlled composition that is a mixture of the first and second materials (110, 111).
摘要翻译：一种用于从不同材料的多个源（110,111）沉积涂层（132）的PVD工艺和设备（120）。该方法和装置（120）特别用于沉积含有一种或多种蒸气压低于NiAl的元素的β-镍铝化物涂层（132）。 PVD工艺和设备（120）需要将至少两种材料（110,111）进料到涂覆室（122）中并且以与其分离的熔池（114,115）不同的速率蒸发材料（110,111）。待涂覆的制品（130）悬浮在涂覆室（122）内，并相对于两个熔池（114,115）用支撑装置（118）运输，以便沉积具有受控组合物的涂层（132）即第一和第二材料（110,111）的混合物。

2. 发明授权

US06620524B2 Nickel aluminide coating and coating systems formed therewith 有权
标题翻译：由此形成的铝化镍涂层和涂层系统
公开(公告)号：US06620524B2
公开(公告)日：2003-09-16
申请号：US10044618
申请日：2002-01-11
申请人： Jeffrey Allan Pfaendtner , Joseph David Rigney , Ramgopal Darolia , Reed Roeder Corderman , Richard Arthur Nardi, Jr.
发明人： Jeffrey Allan Pfaendtner , Joseph David Rigney , Ramgopal Darolia , Reed Roeder Corderman , Richard Arthur Nardi, Jr.
IPC分类号： B32B1504
CPC分类号： C23C28/321 , C23C28/345 , C23C28/3455 , C23C30/00 , Y10T428/12535 , Y10T428/1259 , Y10T428/12611 , Y10T428/12618 , Y10T428/1275 , Y10T428/12806 , Y10T428/12861 , Y10T428/12944
摘要： A predominantly beta-phase NiAl overlay coating for use as an environmental coating or a TBC bond coat for articles used in hostile thermal environments, such as components of a gas turbine engine. The coating contains up to about 4 atomic percent hafnium, such as in excess of 1.0 atomic percent hafnium. The coating may also contain about 2 to about 15 atomic percent chromium.
摘要翻译：主要是β相NiAl覆盖涂层，用作环境涂层或TBC粘合涂层，用于恶劣热环境中使用的物品，例如燃气涡轮发动机的部件。该涂层含有高达约4原子％的铪，例如超过1.0原子％的铪。该涂层还可含有约2至约15原子％的铬。

3. 发明授权

US06689199B2 Apparatus and method for introducing small amounts of refractory elements into a vapor deposition coating 失效
$Apparatus and method for introducing small amounts of refractory elements into a vapor deposition coating$
标题翻译：将少量难熔元素引入气相沉积涂层的装置和方法
公开(公告)号：US06689199B2
公开(公告)日：2004-02-10
申请号：US10272236
申请日：2002-10-16
申请人： Reed Roeder Corderman , Melvin Robert Jackson , Richard Arthur Nardi, Jr.
发明人： Reed Roeder Corderman , Melvin Robert Jackson , Richard Arthur Nardi, Jr.
IPC分类号： C23C1606
CPC分类号： C23C14/30 , C23C14/16 , Y02T50/67
摘要： A method of introducing small amounts of a refractory element into a vapor deposition coating. A second material (30), containing at least two elements which are desired to be deposited as a coating on a base material, has placed over it a first material (20) substantially comprising such two elements and a refractory element. The first material (20) is adapted to permit transport of the at least two elements in the second material (30) through the first material (20) when the first (20) and second (30) material are in a molten state and in touching contact with the other so as to permit evaporation of the two elements and the refractory element from an exposed surface. Heat is supplied to the first (20) and second (30) materials to permit evaporation of the at least two elements of second material (30) and the refractory element in the first material (20), and the resulting vapors are condensed as a deposit on a base material (50). A particular method of heating is further disclosed to assist in maintaining adequate rates of evaporation for the aforesaid method, wherein the supplied heat is supplied to an inner heated area (91) and a surrounding outer heated area (92) and at least a portion of the inner heated area (91) is heated to a greater temperature than the outer heated area (92).
摘要翻译：将少量耐火材料引入气相沉积涂层的方法。包含至少两个期望作为涂层涂覆在基材上的元件的第二材料（30）已经在其上放置了基本上包含这两个元件和难熔元件的第一材料（20）。当第一（20）和第二（30）材料处于熔融状态时，第一材料（20）适于允许第二材料（30）中的至少两个元件通过第一材料（20）与另一个接触，以允许两个元件和耐火元件从暴露的表面蒸发。将热量供应到第一（20）和第二（30）材料以允许第一材料（20）中的第二材料（30）的至少两个元件和耐火元件蒸发，并且所得到的蒸气被冷凝为沉积在基材（50）上。进一步公开了一种特定的加热方法，以有助于为上述方法保持足够的蒸发速率，其中供应的热量被供应到内部加热区域（91）和周围的外部加热区域（92）和至少一部分内加热区域（91）被加热到比外部加热区域（92）更高的温度。

4. 发明授权

US06849299B2 Apparatus and method for introducing small amounts of refractory elements into a vapor deposition coating 有权
$Apparatus and method for introducing small amounts of refractory elements into a vapor deposition coating$
标题翻译：将少量难熔元素引入气相沉积涂层的装置和方法
公开(公告)号：US06849299B2
公开(公告)日：2005-02-01
申请号：US10272256
申请日：2002-10-16
申请人： Reed Roeder Corderman , Melvin Robert Jackson , Richard Arthur Nardi, Jr.
发明人： Reed Roeder Corderman , Melvin Robert Jackson , Richard Arthur Nardi, Jr.
IPC分类号： C23C14/16 , C23C14/30
CPC分类号： C23C14/30 , C23C14/16 , Y02T50/67
摘要： A method of introducing small amounts of a refractory element into a vapor deposition coating. A second material (30), containing at least two elements which are desired to be deposited as a coating on a base material, has placed over it a first material (20) substantially comprising such two elements and a refractory element. The first material (20) is adapted to permit transport of the at least two elements in the second material (30) through the first material (20) when the first (20) and second (30) material are in a molten state and in touching contact with the other so as to permit evaporation of the two elements and the refractory element from an exposed surface. Heat is supplied to the first (20) and second (30) materials to permit evaporation of the at least two elements of second material (30) and the refractory element in the first material (20), and the resulting vapors are condensed as a deposit on a base material (50). A particular method of heating is further disclosed to assist in maintaining adequate rates of evaporation for the aforesaid method, wherein the supplied heat is supplied to an inner heated area (91) and a surrounding outer heated area (92) and at least a portion of the inner heated area (91) is heated to a greater temperature than the outer heated area (92).
摘要翻译：将少量耐火材料引入气相沉积涂层的方法。包含至少两个期望作为涂层涂覆在基材上的元件的第二材料（30）已经在其上放置了基本上包含这两个元件和难熔元件的第一材料（20）。当第一（20）和第二（30）材料处于熔融状态时，第一材料（20）适于允许第二材料（30）中的至少两个元件通过第一材料（20）与另一个接触，以允许两个元件和耐火元件从暴露的表面蒸发。将热量供应到第一（20）和第二（30）材料以允许第一材料（20）中的第二材料（30）的至少两个元件和耐火元件蒸发，并且所得到的蒸气被冷凝为沉积在基材（50）上。进一步公开了一种特定的加热方法，以有助于为上述方法保持足够的蒸发速率，其中供应的热量被供应到内部加热区域（91）和周围的外部加热区域（92）和至少一部分内加热区域（91）被加热到比外部加热区域（92）更高的温度。

5. 发明授权

US06174571B1 Method of using a substrate offset to obtain a specific alloy chemistry from a metal alloy EB-PVD coating process 失效
标题翻译：使用基板偏移以从金属合金EB-PVD涂覆工艺获得特定合金化学的方法
公开(公告)号：US06174571B1
公开(公告)日：2001-01-16
申请号：US09387373
申请日：1999-08-31
申请人： Reed Roeder Corderman , Richard Arthur Nardi, Jr.
发明人： Reed Roeder Corderman , Richard Arthur Nardi, Jr.
IPC分类号： C23C1430
CPC分类号： C23C14/548 , C23C14/24
摘要： A method of making an evaporated deposit of a material comprising the steps of: (i) positioning at least one test substrate above a vapor source wherein at least a portion of the at least one test substrate is not perpendicularly disposed to vapor source, (ii) heating the vapor source in a vacuum to evaporate the vapor source, (iii) condensing a deposit evaporated from the vapor source on the at least one test substrate such that at least a portion of the deposit is not perpendicularly deposed to the vapor source, (iv) measuring the chemical composition of the deposit at various positions relative to a line normal to the vapor source, (v) repeating steps (i) through (iv) until a deposit having a desired chemical composition is measured, (vi) removing each of the at least one test substrate, (vii) positioning a workpiece above the vapor source at a location corresponding to that of the test substrate upon which a deposit of desired chemical composition is condensed and measured, (viii) heating the vapor source in a vacuum to evaporate the vapor source, and (ix) condensing a deposit evaporated from the vapor source on the workpiece.
摘要翻译：一种制造材料的蒸发沉积的方法，包括以下步骤：（i）将至少一个测试衬底定位在蒸气源上方，其中至少一部分测试衬底不垂直于蒸气源放置，（ii ）在真空中加热蒸气源以蒸发蒸气源，（iii）将来自蒸气源的沉积物冷凝在至少一个测试基板上，使得沉积物的至少一部分不垂直于蒸气源，（iv）测量相对于垂直于蒸汽源的线的各个位置的沉积物的化学成分，（v）重复步骤（i）至（iv），直到测量具有所需化学成分的沉积物，（vi）所述至少一个测试基板中的每一个，（vii）将工件放置在所述蒸汽源上方的位置处，所述位置对应于所述测试基板的位置，在所述测试基板上凝结和测量所需化学组成的沉积物，在真空中加热蒸气源以蒸发蒸气源，和（ix）将从蒸气源蒸发的沉积物冷凝在工件上。

6. 发明授权

US08283187B2 Photovoltaic device and method for making 有权
标题翻译：光伏器件及制造方法
公开(公告)号：US08283187B2
公开(公告)日：2012-10-09
申请号：US13251851
申请日：2011-10-03
申请人： Dalong Zhong , Gautam Parthasarathy , Richard Arthur Nardi, Jr.
发明人： Dalong Zhong , Gautam Parthasarathy , Richard Arthur Nardi, Jr.
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L31/073 , C23C14/0036 , C23C14/0084 , C23C14/0629 , C23C14/3485 , H01L21/02554 , H01L21/02557 , H01L21/02631 , H01L31/02966 , H01L31/1832 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： One aspect of the present invention provides a device that includes a substrate; a first semiconducting layer; a transparent conductive layer; a transparent window layer. The transparent window layer includes cadmium sulfide and oxygen. The device has a fill factor of greater than about 0.65. Another aspect of the present invention provides a method of making the device.
摘要翻译：本发明的一个方面提供一种包括基板的装置; 第一半导电层; 透明导电层; 透明窗口层。透明窗层包括硫化镉和氧。该装置的填充系数大于约0.65。本发明的另一方面提供一种制造该装置的方法。

7. 发明授权

US08044477B1 Photovoltaic device and method for making 有权
标题翻译：光伏器件及制造方法
公开(公告)号：US08044477B1
公开(公告)日：2011-10-25
申请号：US12894242
申请日：2010-09-30
申请人： Dalong Zhong , Gautam Parthasarathy , Richard Arthur Nardi, Jr.
发明人： Dalong Zhong , Gautam Parthasarathy , Richard Arthur Nardi, Jr.
IPC分类号： H01L31/102 , H01L21/00
CPC分类号： H01L31/073 , C23C14/0036 , C23C14/0084 , C23C14/0629 , C23C14/3485 , H01L21/02554 , H01L21/02557 , H01L21/02631 , H01L31/02966 , H01L31/1832 , H01L31/1836 , Y02E10/543 , Y02P70/521
摘要： One aspect of the present invention provides a device that includes a substrate; a first semiconducting layer; a transparent conductive layer; a transparent window layer. The transparent window layer includes cadmium sulfide and oxygen. The device has a fill factor of greater than about 0.65. Another aspect of the present invention provides a method of making the device.
摘要翻译：本发明的一个方面提供一种包括基板的装置; 第一半导电层; 透明导电层; 透明窗口层。透明窗层包括硫化镉和氧。该装置的填充系数大于约0.65。本发明的另一方面提供一种制造该装置的方法。

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