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1. 发明授权

US3984582A Method for preparing positive resist image 失效
标题翻译：正抗蚀剂图像的制备方法
公开(公告)号：US3984582A
公开(公告)日：1976-10-05
申请号：US591980
申请日：1975-06-30
申请人： Ralph Feder , Ivan Haller , Michael Hatzakis , Lubomyr T. Romankiw , Eberhard A. Spiller
发明人： Ralph Feder , Ivan Haller , Michael Hatzakis , Lubomyr T. Romankiw , Eberhard A. Spiller
IPC分类号： G03F7/20 , G03F7/039 , G03F7/32 , G03F7/38 , H01L21/027 , B05D3/06
CPC分类号： G03F7/039 , G03F7/325 , Y10S430/143 , Y10S430/168
摘要： A positive resist image is produced by exposing, to radiation in a predetermined pattern, a polymeric material containing polymerized alkyl methacrylate units and polymerized monoethylenically unsaturated acid units. The exposed and unexposed areas are distinguished by their different respective abilities to be swelled in an appropriate swelling agent, and the swelled areas are removed by dispersal in a nonsolvent liquid.
摘要翻译：通过以预定图案曝光包含聚合的甲基丙烯酸烷基酯单元和聚合的单烯属不饱和酸单元的聚合物材料来产生正性抗蚀剂图像。暴露和未暴露的区域的区别在于它们各自的能力在适当的溶胀剂中溶胀，并且溶胀区域通过分散在非溶剂液体中除去。

2. 发明授权

US4888632A Easily manufacturable thin film transistor structures 失效
标题翻译：易制造的薄膜晶体管结构
公开(公告)号：US4888632A
公开(公告)日：1989-12-19
申请号：US140699
申请日：1988-01-04
申请人： Ivan Haller
发明人： Ivan Haller
IPC分类号： H01L27/12 , H01L21/027 , H01L21/336 , H01L29/49 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/0274 , H01L29/4908
摘要： An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In additiion to their usual role as gate insulator and optional capping layer, the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers are positioned to either side of the amorphous silicon layer which is a light absorbing layer to act as anti-reflective elements. The insulator layers are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.
摘要翻译：描述了用于制造非晶硅薄膜器件，特别是晶体管的改进的结构和方法。除了它们作为栅极绝缘体和可选的覆盖层的通常作用之外，选择绝缘膜以最大化通过该结构的光刻有源光的透射。这些层位于作为防反射元件的光吸收层的非晶硅层的任一侧。选择绝缘体层具有不同于衬底的折射率，并且选择厚度尺寸，使得在完整结构的界面处反射的所述光刻活性光的波分量破坏性地干扰。

3. 发明授权

US5254488A Easily manufacturable thin film transistor structures 失效
标题翻译：易制造的薄膜晶体管结构
公开(公告)号：US5254488A
公开(公告)日：1993-10-19
申请号：US581316
申请日：1990-09-04
申请人： Ivan Haller
发明人： Ivan Haller
IPC分类号： H01L21/027 , H01L21/336 , H01L29/49 , H01L21/265
CPC分类号： H01L29/66765 , H01L21/0274 , H01L29/4908 , Y10S438/949
摘要： An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In addition to their usual role as gate insulator and optional capping layer, the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers are positioned to either side of the amorphous silicon layer which is a light absorbing layer to act as anti-reflective elements. The insulator layers are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.
摘要翻译：描述了用于制造非晶硅薄膜器件，特别是晶体管的改进的结构和方法。除了通常作为栅极绝缘体和可选的覆盖层的作用之外，选择绝缘膜以最大化通过该结构的光刻有源光的透射。这些层位于作为防反射元件的光吸收层的非晶硅层的任一侧。选择绝缘体层具有不同于衬底的折射率，并且选择厚度尺寸，使得在完整结构的界面处反射的所述光刻活性光的波分量破坏性地干扰。

4. 发明授权

US4741964A Structure containing hydrogenated amorphous silicon and process 失效
标题翻译：含有氢化非晶硅的结构及工艺
公开(公告)号：US4741964A
公开(公告)日：1988-05-03
申请号：US887167
申请日：1986-07-17
申请人： Ivan Haller
发明人： Ivan Haller
IPC分类号： H01L21/205 , H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786 , B32B9/04 , H01L45/00
CPC分类号： H01L29/78618 , H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L29/78669
摘要： A structure containing a substrate having a first hydrogenated amorphous silicon layer thereon and a second hydrogenated amorphous silicon layer located above the first layer. The two hydrogenated amorphous silicon layers differ from each other in the concentration of hydrogen contained therein. In addition, a process for fabricating such a structure is provided.
摘要翻译：一种包含其上具有第一氢化非晶硅层的衬底和位于第一层上方的第二氢化非晶硅层的结构。两个氢化非晶硅层在其中所含的氢的浓度彼此不同。此外，提供了一种用于制造这种结构的方法。

5. 发明授权

US4397722A Polymers from aromatic silanes and process for their preparation 失效
标题翻译：芳族硅烷的聚合物及其制备方法
公开(公告)号：US4397722A
公开(公告)日：1983-08-09
申请号：US406638
申请日：1982-08-09
申请人： Ivan Haller
发明人： Ivan Haller
IPC分类号： C08F2/58 , C08G77/60 , C09D4/00 , C08G77/00 , C08F2/46
CPC分类号： C08G77/60 , C09D4/00
摘要： Thermally stable electrically insulating polymers are obtained from aromatic silanes by low power, radio frequency glow discharge polymerization at elevated temperature and low vapor pressure.
摘要翻译：通过低功率，高温辉光放电聚合和低蒸气压从芳族硅烷获得热稳定的电绝缘聚合物。

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