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1. 发明授权

US07282088B2 Method for copper-plating or bronze-plating an object and liquid mixtures therefor 有权
标题翻译：镀铜或青铜镀方法及其液体混合物的方法
公开(公告)号：US07282088B2
公开(公告)日：2007-10-16
申请号：US10509586
申请日：2003-04-02
申请人： Klaus-Dieter Nittel , Ralf Schneider
发明人： Klaus-Dieter Nittel , Ralf Schneider
IPC分类号： C23C18/38
CPC分类号： C23C18/38 , C23C18/48
摘要： The invention relates to an aqueous concentrate which is stable with respect to freezing and defrosting and which contains at least one water-soluble or water-dispersible copper compound and, optionally, also a water-soluble or water-dispersible tin compound for use in a diluted state as a bath for the currentless copper plating or bronze plating of objects, especially metal objects such as iron or steel wires, characterized in that it contains at least one complexed water-soluble or water-dispersed copper compound. The invention also relates to an aqueous bath which contains at least one aqueous or water-dispersible copper compound and, optionally, a water-soluble or water-dispersible tin compound for the currentless copper plating of objects in addition to at least one brightening agent and which has an adjusted pH value of less than 2.5. The invention also relates to a method for currentless copper plating or bronze plating of an object, especially a metallic object.
摘要翻译：本发明涉及一种在冷冻和除霜方面稳定的含水浓缩物，其含有至少一种水溶性或水分散性铜化合物，以及任选地还可用于水溶性或水分散性锡化合物稀释状态作为用于对象，特别是诸如铁或钢丝的金属物体的无电镀铜或青铜镀层的浴，其特征在于其含有至少一种络合的水溶性或水分散的铜化合物。本发明还涉及含有至少一种水性或水分散性铜化合物和任选的水溶性或水分散性锡化合物的水浴，其用于除了至少一种增亮剂以外的物体的无电镀铜，其pH值小于2.5。本发明还涉及一种用于对象，特别是金属物体的无电镀铜或镀青铜的方法。

2. 发明申请

US20060237099A1 Method for coating metal bodies with a phosphating solution and phosphating solution 审中-公开
标题翻译：用磷酸盐溶液和磷酸盐溶液涂覆金属体的方法
公开(公告)号：US20060237099A1
公开(公告)日：2006-10-26
申请号：US10553382
申请日：2004-05-06
申请人： Ralf Schneider , Klaus-Dieter Nittel
发明人： Ralf Schneider , Klaus-Dieter Nittel
IPC分类号： C23C22/07
CPC分类号： C23C22/368
摘要： The invention relates to a method for coating surfaces of metal objects, especially as a pre-treatment for cold deformation or as a pre-treatment for a metal-rubber compound or to adjust friction coefficients in connection elements, used in connection elements such as screws for screwing purposes. The invention is characterised in that the optionally, already pre-coated metal objects are coated with a composition containing an aqueous, acidic phosphate, said composition containing 8-50 g/L phosphate as PO4, 0.5-30 g/L zinc ions, 0-5 g/L manganese ions, 0-8 g/L calcium ions, 0-5 g/L magnesium ions, whereby at least 0.1 g/L of calcium or/and magnesium ions are provided, 0.1-5 g/L nitroguanidine, 0.1-8 g/L chlorate or/and peroxide ions and 0-16 g/L complex fluoride (MeF4 or/and MeF6) of Me=B, Si, Ti, Hf or/and Zr and 0-5 g/L fluoride ions, whereby the total amount of complex fluoride and fluoride ions ranges from 0.1-18 g/L. The invention also relates to a phosphating method wherein the ratio of removal by pickling in relation to the layer weight of the phosphate layer is less than 75%. The invention further relates to a corresponding aqueous phosphating solution.
摘要翻译：本发明涉及一种用于涂覆金属物体的表面的方法，特别是作为冷变形的预处理或作为金属 - 橡胶混合物的预处理或调节连接元件中使用的连接元件（例如螺钉）中的摩擦系数的方法用于拧紧目的。本发明的特征在于，任选地，已经预先涂覆的金属物体涂覆有含有酸性磷酸盐的组合物，所述组合物含有8-50g / L磷酸盐作为PO 4， 30g / L锌离子，0-5g / L锰离子，0-8g / L钙离子，0-5g / L镁离子，由此提供至少0.1g / L的钙离子或/或镁离子，0.1-5g / L硝基胍，0.1-8g / L氯酸盐或/和过氧化物离子和0-16g / L络合氟化物（MeF 3/4或/和MeF 6） Me = B，Si，Ti，Hf或/和Zr和0-5g / L氟离子，由此氟化物和氟化物络合物的总量为0.1-18g / L。本发明还涉及一种磷酸盐化方法，其中通过酸洗除去的比例相对于磷酸盐层的层重量小于75％。本发明还涉及相应的磷酸氢盐水溶液。

3. 发明申请

US20080166575A1 Method For Preparing Metallic Workplaces For Cold Forming 审中-公开
标题翻译：准备金属加工场用于冷成型的方法
公开(公告)号：US20080166575A1
公开(公告)日：2008-07-10
申请号：US11913529
申请日：2006-05-03
申请人： Klaus-Dieter Nittel , Ralf Schneider , Andreas Lang
发明人： Klaus-Dieter Nittel , Ralf Schneider , Andreas Lang
IPC分类号： B32B15/04 , B21B45/02 , C23C28/00
CPC分类号： C25D11/36 , C23C22/17 , C23C22/188 , C23C22/22 , Y10T428/31678
摘要： The invention relates to a method for preparing metallic workpieces for cold forming by contacting the metallic surfaces thereof with an aqueous acid phosphating solution so as to embody at least one phosphate coating and then coating the phosphate-coated surfaces with at least one lubricant in order to embody at least one lubricant layer. According to the inventive method, the phosphating solution essentially contains only calcium, magnesium, or/and manganese as cations that are selected among cations of main group 2 and subgroups 1, 2, and 5 to 8 of the periodic table of chemical elements in addition to phosphate. Furthermore, an alkaline earth metal-containing phosphating solution is free from fluoride and complex fluoride while the phosphating process is carried out electrolytically. The invention further relates to a metallic workpiece that is coated accordingly as well as the use of workpieces coated in said manner.
摘要翻译：本发明涉及一种通过使其金属表面与酸性磷酸盐水溶液接触来制备用于冷成型的金属工件的方法，以便体现至少一种磷酸盐涂层，然后用至少一种润滑剂涂覆磷酸盐涂覆的表面，以便至少涂抹一层润滑剂层。根据本发明的方法，磷化溶液基本上仅含有钙，镁或锰作为阳离子，其阳离子另外选自化学元素周期表第2族和第1,2族和第5至8族的阳离子到磷酸盐。此外，在电解进行磷化处理的同时，含碱土金属的磷酸盐溶液不含氟化物和络合氟化物。本发明还涉及相应地涂覆的金属工件，以及使用以所述方式涂覆的工件。

4. 发明申请

US20060090669A1 Method for copper-plating or bronze-plating an object and liquid mixtures therefor 有权
标题翻译：镀铜或青铜镀方法及其液体混合物的方法
公开(公告)号：US20060090669A1
公开(公告)日：2006-05-04
申请号：US10509586
申请日：2003-04-02
申请人： Klaus-Dieter Nittel , Ralf Schneider
发明人： Klaus-Dieter Nittel , Ralf Schneider
IPC分类号： C23C18/38
CPC分类号： C23C18/38 , C23C18/48
摘要： The invention relates to an aqueous concentrate which is stable with respect to freezing and defrosting and which contains at least one water-soluble or water-dispersible copper compound and, optionally, also a water-soluble or water-dispersible tin compound for use in a diluted state as a bath for the currentless copper plating or bronze plating of objects, especially metal objects such as iron or steel wires, characterised in that it contains at least one complexed water-soluble or water-dispersed copper compound. The invention also relates to an aqueous bath which contains at least one aqueous or water-dispersible copper compound and, optionally, a water-soluble or water-dispersible tin compound for the currentless copper plating of objects in addition to at least one brightening agent and which has an adjusted pH value of less than 2.5. The invention also relates to a method for currentless copper plating or bronze plating of an object, especially a metallic object.
摘要翻译：本发明涉及一种在冷冻和除霜方面稳定的含水浓缩物，其含有至少一种水溶性或水分散性铜化合物，以及任选地还可用于水溶性或水分散性锡化合物稀释状态作为用于对象，特别是诸如铁或钢丝的金属物体的无电镀铜或青铜镀层的浴，其特征在于其含有至少一种络合的水溶性或水分散的铜化合物。本发明还涉及含有至少一种水性或水分散性铜化合物和任选的水溶性或水分散性锡化合物的水浴，其用于除了至少一种增亮剂以外的物体的无电镀铜，其pH值小于2.5。本发明还涉及一种用于对象，特别是金属物体的无电镀铜或镀青铜的方法。

5. 发明授权

US07992426B2 Apparatus and method for increasing the selectivity of FET-based gas sensors 有权
标题翻译：提高基于FET的气体传感器选择性的装置和方法
公开(公告)号：US07992426B2
公开(公告)日：2011-08-09
申请号：US11587171
申请日：2005-04-21
申请人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Uwe Lampe , Hans Meixner , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： G01N33/00 , G01N27/414
CPC分类号： G01N33/0014 , G01N27/4143
摘要： A FET gas sensor having a relatively low operating temperature, for example, room temperature, is free from cross sensitivities from interfering gases by a preceding in-line filter. The sensor's service life is substantially stabilizable by using fabric-like activated charcoal filters which can be regenerated by a moderate temperature increase, and by limiting the diffusion of the analyte gas, which is made possible by the relatively small amount of gas detectable on the sensitive layer of the sensor. This substantially increases the service life of the filters. The gas sensor eliminates cross sensitivities to thereby increase the detection reliability thereof. Also, the gas sensor has relative long term stability and is economical to build. The gas sensor can read relatively weak signals generated by gas-sensitive layers, for example, without other stronger gas signals interfering with the weak signals.
摘要翻译：具有较低工作温度（例如室温）的FET气体传感器不受前面的在线过滤器的干扰气体的交叉敏感性。传感器的使用寿命通过使用织物样的活性炭过滤器可以基本上稳定，该过滤器可以通过适度的温度升高再生，并且通过限制分析物气体的扩散，这是通过敏感的可检测的相对少量的气体传感器层。这大大增加了过滤器的使用寿命。气体传感器消除了交叉敏感度，从而提高了其检测可靠性。此外，气体传感器具有相对的长期稳定性并且构建经济。气体传感器可以读取由气体敏感层产生的相对较弱的信号，例如，没有其他较强气体信号干扰弱信号。

6. 发明授权

US07772617B2 Gas sensitive field-effect-transistor 有权
标题翻译：气体敏感场效应晶体管
公开(公告)号：US07772617B2
公开(公告)日：2010-08-10
申请号：US11393371
申请日：2006-03-30
申请人： Maximilian Fleischer , Hans Meixner , Uwe Lampe , Roland Pohle , Ralf Schneider , Elfriede Simon
发明人： Maximilian Fleischer , Hans Meixner , Uwe Lampe , Roland Pohle , Ralf Schneider , Elfriede Simon
IPC分类号： G01N27/414
CPC分类号： G01N27/4143
摘要： A gas sensitive field effect transistor comprises a semiconductor substrate that includes a capacitance well, and source and drain regions of a field effect transistor. A gate of the field effect transistor is separated from the semiconductor substrate by an insulator, and a gas sensitive layer separated from the gate by an air gap. The field effect transistor provides an output signal indicative of the presence of a target gas within the air gap to an amplifier, which provides an amplified output signal that is electrically coupled to the capacitance well.
摘要翻译：气体敏感场效应晶体管包括包括电容阱的半导体衬底以及场效应晶体管的源极和漏极区。场效应晶体管的栅极通过绝缘体与半导体衬底分离，气敏层由气隙与栅极分离。场效应晶体管提供指示空气间隙内存在目标气体到放大器的输出信号，放大器提供与电容阱电耦合的放大输出信号。

7. 发明授权

US07224627B2 Integrated semiconductor circuit and method for testing the same 有权
标题翻译：集成半导体电路及其测试方法
公开(公告)号：US07224627B2
公开(公告)日：2007-05-29
申请号：US11100617
申请日：2005-04-07
申请人： Marcin Gnat , Aurel von Campenhausen , Joerg Vollrath , Ralf Schneider
发明人： Marcin Gnat , Aurel von Campenhausen , Joerg Vollrath , Ralf Schneider
IPC分类号： G11C7/00
CPC分类号： G11C29/12005 , G11C29/12
摘要： Integrated semiconductor circuits, in particular, dynamic random access memories include a multiplicity of generator circuits for generating internal voltage levels from an externally applied supply voltage. During testing, the internal voltage levels are altered by the output voltage generated at the output of the generator circuit being adapted to an externally applied test voltage. If the test voltage is outside a tolerance range, the semiconductor circuit maybe destroyed. A protection circuit connected in parallel with the generator circuit limits the output voltage.
摘要翻译：集成半导体电路，特别是动态随机存取存储器包括用于从外部施加的电源电压产生内部电压电平的多个发生器电路。在测试期间，内部电压电平由发生器电路输出端产生的输出电压改变为外部施加的测试电压。如果测试电压超出公差范围，则半导体电路可能被破坏。与发生器电路并联连接的保护电路限制输出电压。

8. 发明申请

US20060120176A1 Integrated semiconductor memory with test circuit 有权
标题翻译：具有测试电路的集成半导体存储器
公开(公告)号：US20060120176A1
公开(公告)日：2006-06-08
申请号：US11235540
申请日：2005-09-27
申请人： Ralf Schneider , Stephan Schroder , Manfred Proll , Herbert Benzinger
发明人： Ralf Schneider , Stephan Schroder , Manfred Proll , Herbert Benzinger
IPC分类号： G11C7/06
CPC分类号： G11C29/025 , G11C8/08 , G11C11/401 , G11C29/02 , G11C2029/1202
摘要： An integrated semiconductor memory includes word lines connected to a first voltage potential via a respective first controllable switch and a respective third controllable switch and to a second voltage potential via a respective second controllable switch. In order to test whether one of the word lines is connected to the first voltage potential via its respective first and third controllable switches, the one of the word lines is connected to a comparator circuit via the respective second controllable switch and a driver line. After the respective first and third controllable switches have been controlled into the on state, in a test operating state of the integrated semiconductor memory, the respective second controllable switch is controlled into the on state and a potential state on the word line is evaluated by the comparator circuit. The result of the evaluation is fed to an external data terminal by an evaluation signal.
摘要翻译：集成半导体存储器包括通过相应的第一可控开关和相应的第三可控开关连接到第一电压电位的字线，以及经由相应的第二可控开关连接到第二电压电位的字线。为了测试字线之一是否经由其相应的第一和第三可控开关连接到第一电压电位，所述字线之一经由相应的第二可控开关和驱动器线连接到比较器电路。在相应的第一和第三可控开关已经被控制为导通状态之后，在集成半导体存储器的测试操作状态下，将相应的第二可控开关控制在导通状态，并且字线上的电位状态由比较器电路。评估结果通过评估信号馈送到外部数据终端。

9. 发明申请

US20050218960A1 Integrated circuit 有权
标题翻译：集成电路
公开(公告)号：US20050218960A1
公开(公告)日：2005-10-06
申请号：US11092963
申请日：2005-03-30
申请人： Aurel Campenhausen , Joerg Vollrath , Ralf Schneider , Marcin Gnat
发明人： Aurel Campenhausen , Joerg Vollrath , Ralf Schneider , Marcin Gnat
IPC分类号： B60T8/34 , G01R31/27 , G01R31/28 , G11C29/48 , G11C29/50
CPC分类号： G11C29/1201 , G01R31/275 , G01R31/2884 , G11C29/48 , G11C29/50 , G11C2029/5002
摘要： An integrated circuit includes a circuit component, a first control circuit and a switchable resistance network. An input voltage is fed to the circuit component on the input side. A control signal generated by the first control circuit is fed to the control terminal of the circuit component. With the switchable resistance network, the first resistance or the second resistance is connected between an output terminal of the circuit component and the output terminal of the integrated circuit to generate a voltage drop between the input side and the output terminal of the circuit component. The integrated circuit makes it possible to generate a current at the output terminal of the circuit component in a manner dependent on the control signal and the voltage dropped between the input side and the output terminal of the circuit component. Families of characteristic curves of transistors of an integrated circuit are determined by the integrated circuit.
摘要翻译：集成电路包括电路部件，第一控制电路和可切换电阻网络。输入电压被馈送到输入侧的电路部件。由第一控制电路产生的控制信号被馈送到电路部件的控制端。利用可切换电阻网络，第一电阻或第二电阻连接在电路部件的输出端和集成电路的输出端之间，以在电路部件的输入侧和输出端之间产生电压降。集成电路使得可以以取决于控制信号的方式在电路部件的输出端产生电流以及在电路部件的输入侧和输出端子之间落下的电压。集成电路的晶体管的特性曲线族由集成电路确定。

10. 发明申请

US20050205946A1 Field effect semiconductor switch and method for fabricating it 有权
标题翻译：场效应半导体开关及其制造方法
公开(公告)号：US20050205946A1
公开(公告)日：2005-09-22
申请号：US11079884
申请日：2005-03-15
申请人： Jorg Vollrath , Marcin Gnat , Ralf Schneider , Stephan Schroder
发明人： Jorg Vollrath , Marcin Gnat , Ralf Schneider , Stephan Schroder
IPC分类号： H01L21/336 , H01L21/8242 , H01L27/105 , H01L29/06 , H01L29/10 , H01L29/423 , H01L29/745 , H01L29/76 , H01L29/78 , H01L29/786 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/78696 , H01L27/10867 , H01L27/10873 , H01L29/0649 , H01L29/1037 , H01L29/42384 , H01L29/66757 , H01L29/66772 , H01L29/78606 , H01L29/78618
摘要： A field effect semiconductor comprises a semiconductor layer having a surface, a first and a second semiconductor region in the semiconductor layer, which are arranged next to one another at the surface of the semiconductor layer, an insulating layer between the first semiconductor region and the second semiconductor region, a semiconductor strip on the surface of the semiconductor layer, which semiconductor strip overlaps the first semiconductor region and the second semiconductor region and adjoins these. A gate overlaps the semiconductor strip at least in the region of the insulating layer. A gate dielectric insulates the gate from the semiconductor strip the first semiconductor region and the second semiconductor region. The semiconductor strip and the gate being formed such that the semiconductor strip is electrically insulating at a first predetermined gate voltage and is electrically conductive at a second predetermined gate voltagero.
摘要翻译：场效应半导体包括在半导体层的表面上彼此相邻布置的半导体层中具有表面的第一和第二半导体区域的半导体层，在第一半导体区域和第二半导体区域之间的绝缘层半导体区域，半导体层的表面上的半导体条，该半导体条与第一半导体区域和第二半导体区域重叠，并与其邻接。至少在绝缘层的区域中，栅极与半导体条重叠。栅介质将栅极与半导体条绝缘在第一半导体区和第二半导体区之间。半导体条和栅极形成为使得半导体条以第一预定栅极电压电绝缘并且在第二预定栅极电压下导电。

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