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1. 发明申请

US20120079692A1 ARRAY OF BAW RESONATORS WITH MASK CONTROLLED RESONANT FREQUENCIES 审中-公开
标题翻译： BAR谐振器阵列与面板控制的谐振频率
公开(公告)号：US20120079692A1
公开(公告)日：2012-04-05
申请号：US13326777
申请日：2011-12-15
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H04R17/00 , H02K15/00
CPC分类号： H03H3/04 , H03H3/007 , H03H3/0076 , H03H3/02 , H03H9/15 , H03H9/171 , H03H9/205 , H03H2003/027 , H03H2003/0414 , H03H2003/0442 , H03H2003/045 , H03H2003/0478 , Y10T29/42 , Y10T29/49005 , Y10T29/49009 , Y10T29/49147 , Y10T29/49155
摘要： Methods that create an array of BAW resonators by patterning a mass load layer to control the resonant frequency of the resonators and resonators formed thereby, are disclosed. Patterning the surface of a mass load layer and introducing apertures with dimensions smaller than the acoustic wavelength, or dimpling the mass load layer, modifies the acoustic path length of the resonator, thereby changing the resonant frequency of the device. Patterns of variable density allow for further tuning the resonators and for individualized tuning of a resonator in an array of resonators. Patterning a reflowable material for the mass load layer, thereby providing a variable pattern density and distribution followed by elevating the temperature of the mass load layer above its melting point causes the material to liquefy and fill into the apertures to redistribute the mass load layer, thereby, upon subsequent cooling, providing resonators with a predetermined desired resonant frequency.
摘要翻译：公开了通过图案化质量负载层来控制由此形成的谐振器和谐振器的谐振频率来产生BAW谐振器阵列的方法。对质量负载层的表面进行图案化并引入具有小于声波长的尺寸的孔，或者使质量负载层变形，来改变谐振器的声路长度，从而改变器件的谐振频率。可变密度的模式允许谐振器的进一步调谐和谐振器阵列中的谐振器的单独调谐。将质量负载层的可回流材料图案化，从而提供可变图案密度和分布，随后将质量负载层的温度升高到其熔点以上，使材料液化并填充到孔中以重新分配质量负载层，由此在随后的冷却中，提供具有预定期望谐振频率的谐振器。

2. 发明申请

US20090289526A1 DEVICES HAVING A TUNABLE ACOUSTIC PATH LENGTH AND METHODS FOR MAKING SAME 失效
标题翻译：具有可控气道长度的装置及其制造方法
公开(公告)号：US20090289526A1
公开(公告)日：2009-11-26
申请号：US12391490
申请日：2009-02-24
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H01L41/04
CPC分类号： H01L41/083 , H01L41/18 , H03H9/0095 , H03H9/15 , H03H9/171 , H03H9/205 , H03H9/38 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2009/02173
摘要： A tunable acoustic resonator device. The device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different. The tunable crystal medium has a highly field-polarizable and lattice-deformable, substantially centrosymmetric structure over an operating temperature range under a condition of relatively low applied stress. The tunable crystal medium has a substantially non-centrosymmetric structure over said operating temperature range under a condition of relatively high applied stress. The dielectric permittivity of the tunable crystal medium is at least 100 at the relatively low applied stress. The tunable crystal medium is close to its ferroelectric instability but remains paraelectric throughout the operating temperature range of the device. The phase transition temperature of the tunable crystal medium from paraelectric to ferroelectric state is just below the operating temperature range.
摘要翻译：可调谐声谐振器装置。该器件具有作为第一薄膜层的压电介质和作为第二薄膜层的可调晶体介质。可调谐晶体介质在相对较低的施加应力条件下在工作温度范围内具有第一声学行为，并且在施加应力相对较高的条件下具有第二声学行为。声学行为显着不同。可调晶体介质在相对低的施加应力的条件下，在工作温度范围内具有高场极化和晶格变形，基本上为中心对称的结构。可调谐晶体介质在相对较高的施加应力的条件下，在所述工作温度范围内具有基本上非中心对称的结构。在相对低的施加应力下，可调晶体介质的介电常数至少为100。可调谐晶体介质接近其铁电不稳定性，但在器件的整个工作温度范围内保持平行。可调晶体介质从顺电相到铁电状态的相变温度刚好低于工作温度范围。

3. 发明授权

US09362880B2 Manufacturing method of an array of BAW resonators with mask controlled resonant frequencies 有权
标题翻译：具有掩模控制谐振频率的BAW谐振器阵列的制造方法
公开(公告)号：US09362880B2
公开(公告)日：2016-06-07
申请号：US13326777
申请日：2011-12-15
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H03H3/02 , H03H9/15 , H03H3/04 , H03H3/007 , H03H9/205 , H03H9/17
CPC分类号： H03H3/04 , H03H3/007 , H03H3/0076 , H03H3/02 , H03H9/15 , H03H9/171 , H03H9/205 , H03H2003/027 , H03H2003/0414 , H03H2003/0442 , H03H2003/045 , H03H2003/0478 , Y10T29/42 , Y10T29/49005 , Y10T29/49009 , Y10T29/49147 , Y10T29/49155
摘要： Methods that create an array of BAW resonators by patterning a mass load layer to control the resonant frequency of the resonators and resonators formed thereby, are disclosed. Patterning the surface of a mass load layer and introducing apertures with dimensions smaller than the acoustic wavelength, or dimpling the mass load layer, modifies the acoustic path length of the resonator, thereby changing the resonant frequency of the device. Patterns of variable density allow for further tuning the resonators and for individualized tuning of a resonator in an array of resonators. Patterning a reflowable material for the mass load layer, thereby providing a variable pattern density and distribution followed by elevating the temperature of the mass load layer above its melting point causes the material to liquefy and fill into the apertures to redistribute the mass load layer, thereby, upon subsequent cooling, providing resonators with a predetermined desired resonant frequency.
摘要翻译：公开了通过图案化质量负载层来控制由此形成的谐振器和谐振器的谐振频率来产生BAW谐振器阵列的方法。对质量负载层的表面进行图案化并引入具有小于声波长的尺寸的孔，或者使质量负载层变形，来改变谐振器的声路长度，从而改变器件的谐振频率。可变密度的模式允许谐振器的进一步调谐和谐振器阵列中的谐振器的单独调谐。将质量负载层的可回流材料图案化，从而提供可变图案密度和分布，随后将质量负载层的温度升高到其熔点以上，使材料液化并填充到孔中以重新分配质量负载层，由此在随后的冷却中，提供具有预定期望谐振频率的谐振器。

4. 发明授权

US08531083B2 Devices having a tunable acoustic path length and methods for making same 失效
公开(公告)号：US08531083B2
公开(公告)日：2013-09-10
申请号：US12391490
申请日：2009-02-24
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H01L41/08
CPC分类号： H01L41/083 , H01L41/18 , H03H9/0095 , H03H9/15 , H03H9/171 , H03H9/205 , H03H9/38 , H03H9/584 , H03H9/589 , H03H9/605 , H03H2009/02173
摘要： A tunable acoustic resonator device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different and, consequently, the different levels of applied stress are used to tune the acoustic resonator device. Compared with the tunable resonator device consisting of only tunable crystal medium, a device having both the piezoelectric and tunable crystal medium has advantages such as larger inherent bandwidth and less nonlinearity with AC signals. The device also requires a smaller applied stress (i.e. bias voltage) to achieve the required frequency tuning.

5. 发明申请

US20100277034A1 ARRAY OF BAW RESONATORS WITH MASK CONTROLLED RESONANT FREQUENCIES 审中-公开
标题翻译： BAR谐振器阵列与面板控制的谐振频率
公开(公告)号：US20100277034A1
公开(公告)日：2010-11-04
申请号：US12721914
申请日：2010-03-11
申请人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
发明人： Rajarishi Sinha , L. Richard Carley , Deok-Yang Kim
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： H03H3/04 , H03H3/007 , H03H3/0076 , H03H3/02 , H03H9/15 , H03H9/171 , H03H9/205 , H03H2003/027 , H03H2003/0414 , H03H2003/0442 , H03H2003/045 , H03H2003/0478 , Y10T29/42 , Y10T29/49005 , Y10T29/49009 , Y10T29/49147 , Y10T29/49155
摘要： Methods that create an array of BAW resonators by patterning a mass load layer to control the resonant frequency of the resonators and resonators formed thereby, are disclosed. Patterning the surface of a mass load layer and introducing apertures with dimensions smaller than the acoustic wavelength, or dimpling the mass load layer, modifies the acoustic path length of the resonator, thereby changing the resonant frequency of the device. Patterns of variable density allow for further tuning the resonators and for individualized tuning of a resonator in an array of resonators. Patterning a reflowable material for the mass load layer, thereby providing a variable pattern density and distribution followed by elevating the temperature of the mass load layer above its melting point causes the material to liquefy and fill into the apertures to redistribute the mass load layer, thereby, upon subsequent cooling, providing resonators with a predetermined desired resonant frequency.
摘要翻译：公开了通过图案化质量负载层来控制由此形成的谐振器和谐振器的谐振频率来产生BAW谐振器阵列的方法。对质量负载层的表面进行图案化并引入具有小于声波长的尺寸的孔，或者使质量负载层变形，来改变谐振器的声路长度，从而改变器件的谐振频率。可变密度的模式允许谐振器的进一步调谐和谐振器阵列中的谐振器的单独调谐。将质量负载层的可回流材料图案化，从而提供可变图案密度和分布，随后将质量负载层的温度升高到其熔点以上，使材料液化并填充到孔中以重新分配质量负载层，由此在随后的冷却中，提供具有预定期望谐振频率的谐振器。

6. 发明授权

US07159421B2 Manufacture of planar waveguides using sol-gel techniques 失效
标题翻译：使用溶胶 - 凝胶技术制造平面波导
公开(公告)号：US07159421B2
公开(公告)日：2007-01-09
申请号：US10196678
申请日：2002-07-16
申请人： Suhas Bhandarkar , Henry Du , David Wilfred Johnson , Deok-Yang Kim , Glen R. Kowach
发明人： Suhas Bhandarkar , Henry Du , David Wilfred Johnson , Deok-Yang Kim , Glen R. Kowach
IPC分类号： C03B8/02
CPC分类号： C23C28/04 , C23C18/06 , C23C18/1212 , C23C18/1225 , C23C18/1254 , C23C18/127 , C23C26/00 , G02B2006/12097
摘要： Silica sol techniques are described for making thick silica or silica based films useful for planar optical waveguides. The process involves coating of a colloidal silica sol onto a substrate, drying the sol, and consolidating the dried sol to form the planar waveguide. Coating is performed in a simple operation, either by dipping, or preferably by spin coating. In a preferred embodiment the substrate is coated with a wetting agent prior to spin coating. It is found that the wetting agent substantially improves the thickness uniformity of the layer.Thick waveguide layers may be produced by repeating the coating process one or more times to produce a layer with the desired thickness. Buried waveguides are produced by forming a doped core layer, patterning the doped core layer and using the coating technique of the invention to form the cladding material.
摘要翻译：描述了用于制备用于平面光波导的厚二氧化硅或二氧化硅基膜的硅溶胶技术。该方法包括将胶体二氧化硅溶胶涂布在基材上，干燥溶胶，并固化干燥的溶胶以形成平面波导。通过浸渍或优选通过旋涂在简单的操作中进行涂覆。在优选的实施方案中，在旋涂之前，用润湿剂涂覆基材。发现润湿剂基本上改善了层的厚度均匀性。可以通过重复涂覆过程一次或多次以制备具有所需厚度的层来制备厚的波导层。掩埋波导通过形成掺杂的芯层，图案化掺杂的芯层并使用本发明的涂覆技术来形成包层材料来制造。

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