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1. 发明授权

US06268299B1 Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability 有权
标题翻译：用于可调蚀刻选择性和增强的透氢性的可变化学计量氮化硅阻挡膜
公开(公告)号：US06268299B1
公开(公告)日：2001-07-31
申请号：US09668988
申请日：2000-09-25
申请人： Rajarao Jammy , Johnathan E. Faltermeier , Keitaro Imai , Ryota Katsumata , Jean-Marc Rousseau , Viraj Y. Sardesai , Joseph F. Shepard, Jr.
发明人： Rajarao Jammy , Johnathan E. Faltermeier , Keitaro Imai , Ryota Katsumata , Jean-Marc Rousseau , Viraj Y. Sardesai , Joseph F. Shepard, Jr.
IPC分类号： H01L21318
CPC分类号： C23C14/0652 , H01L21/3185
摘要： A low-temperature process for forming a highly conformal barrier film during integrated circuit manufacture by low pressure chemical vapor deposition (LPCVD). The process includes the following steps. First, the process provides ammonia and a silicon-containing gas selected from the group consisting of silane, dichlorosilane, bistertiarybutylaminosilanc, hexachlorodisilane, and mixtures of those compositions. The ratio of the volume of ammonia to the volume of the silicon-containing gas is adjusted to yield silicon concentrations greater than 43 atomic percent in the resultant film. The process applies a deposition temperature of 550° C. to 720° C. The ammonia and the silicon-containing gas are reacted at the deposition temperature to form a silicon-rich nitride film less than 200 Å thick. Finally, the silicon nitride film is deposited by low pressure chemical vapor deposition.
摘要翻译：在低压化学气相沉积（LPCVD）的集成电路制造过程中形成高保形阻挡膜的低温工艺。该过程包括以下步骤。首先，该方法提供氨和含硅气体，其选自硅烷，二氯硅烷，二丁基氨基硅烷，六氯二硅烷，以及这些组合物的混合物。调节氨体积与含硅气体体积的比例，得到所得膜中硅浓度大于43原子百分比。该方法将沉积温度为550℃至720℃。氨和含硅气体在沉积温度下反应，形成厚度小于200埃的富硅氮化物膜。最后，通过低压化学气相沉积沉积氮化硅膜。

2. 发明授权

US08430326B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08430326B2
公开(公告)日：2013-04-30
申请号：US13112373
申请日：2011-05-20
申请人： Jun Koyama , Keitaro Imai
发明人： Jun Koyama , Keitaro Imai
IPC分类号： G06K19/06
CPC分类号： H01L27/13 , G11C17/16 , H01L27/12 , H01L27/1214 , H01L27/1266
摘要： A semiconductor device which may be used as an ID chip and data may be rewritten only one time. In addition, a semiconductor device may be used as an ID chip and data may be written except when manufacturing the chip. The invention has a modulating circuit, a demodulating circuit, a logic circuit, a memory circuit, and an antenna circuit over an insulating substrate. The modulating circuit and the demodulating circuit are electrically connected to an antenna circuit, the demodulating circuit is connected to the logic circuit, the memory circuit stores an output signal of the logic circuit, and the memory circuit is a fuse memory circuit using a fuse element.
摘要翻译：可以用作ID芯片和数据的半导体器件可以仅重写一次。此外，半导体器件可以用作ID芯片，并且可以写入数据，除非制造芯片。本发明在绝缘基板上具有调制电路，解调电路，逻辑电路，存储电路和天线电路。调制电路和解调电路电连接到天线电路，解调电路连接到逻辑电路，存储电路存储逻辑电路的输出信号，存储电路是使用熔丝元件的熔丝存储电路。

3. 发明申请

US20120214259A1 OXYGEN DIFFUSION EVALUATION METHOD OF OXIDE FILM STACKED BODY 有权
标题翻译：氧化物膜堆积体的氧气扩散评估方法
公开(公告)号：US20120214259A1
公开(公告)日：2012-08-23
申请号：US13213458
申请日：2011-08-19
申请人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
发明人： Yutaka Okazaki , Keitaro Imai , Atsuo Isobe , Shunpei Yamazaki
IPC分类号： H01L21/66
CPC分类号： G01N23/2258 , G01N2223/611
摘要： Experience shows that, in a material containing oxygen as a main component, an excess or deficiency of trace amounts of oxygen with respect to a stoichiometric composition, or the like affects properties of the material. An oxygen diffusion evaluation method of an oxide film stacked body includes the steps of: measuring a quantitative value of one of oxygen isotopes of a substrate including a first oxide film and a second oxide film which has an existence proportion of an oxygen isotope different from an existence proportion of an oxygen isotope in the first oxide film in a depth direction, by secondary ion mass spectrometry; and evaluating the one of the oxygen isotopes diffused from the first oxide film to the second oxide film.
摘要翻译：经验表明，在含氧作为主要成分的材料中，相对于化学计量组成等的痕量氧的过量或不足影响材料的性能。氧化膜层叠体的氧扩散评价方法包括以下步骤：测量包含第一氧化物膜和第二氧化物膜的基板的氧同位素的定量值，所述氧化物存在比例与氧同位素通过二次离子质谱法在深度方向上在第一氧化膜中的氧同位素的存在比例; 并评估从第一氧化物膜扩散到第二氧化物膜的氧同位素中的一种。

4. 发明授权

US08040059B2 Display device comprising a conductive barrier body in direct contact with a sealing material 有权
标题翻译：显示装置包括与密封材料直接接触的导电阻挡体
公开(公告)号：US08040059B2
公开(公告)日：2011-10-18
申请号：US10569528
申请日：2004-08-25
申请人： Keitaro Imai , Aya Anzai , Yasuko Watanabe
发明人： Keitaro Imai , Aya Anzai , Yasuko Watanabe
IPC分类号： H01L51/50 , H01L51/52
CPC分类号： H01L27/3276 , H01L23/564 , H01L27/1222 , H01L27/3258 , H01L51/0005 , H01L51/5246 , H01L2924/0002 , H01L2924/00
摘要： It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided.
摘要翻译：本发明的目的是提供一种防止水和/或氧的外部侵入并防止由于这些侵入物质引起的发光元件劣化的显示装置，并且提供一种制造方法，其包括用于制造显示器的简单制造步骤设备。本发明提供了一种在暴露的层间绝缘体的边缘上具有密封材料的显示装置，用于防止来自层间绝缘体的水和/或氧的侵入。此外，本发明提供一种在暴露的层间绝缘体上具有阻挡体的显示装置，用于防止水和/或氧从层间绝缘体的侵入。此外，在生产显示装置的制造步骤中应用液滴放电技术可以消除诸如曝光和显影的光刻步骤。因此，提供了一种生产具有提高的产量的显示装置的方法。

5. 发明申请

US20110073865A1 Display Device and Manufacturing Method Thereof 有权
标题翻译：显示设备及其制造方法
公开(公告)号：US20110073865A1
公开(公告)日：2011-03-31
申请号：US12960711
申请日：2010-12-06
申请人： Keitaro Imai
发明人： Keitaro Imai
IPC分类号： H01L33/16
CPC分类号： G02F1/136286 , G02F2001/136295 , H01L27/1292
摘要： Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.
摘要翻译：通常，进行光刻和各向异性蚀刻以在电极和布线等之间形成插塞，从而增加步骤数量，使吞吐量更差并且产生不必要的材料。为了解决这些问题，本发明提供一种显示装置的制造方法，其包括导电层或布线的形成步骤以及可处理较大基板的接触塞。在形成用于电连接包括多层的导电图案的插头的情况下，在基底导电层图案上形成由导体制成的柱，然后在整个表面上形成绝缘膜之后，蚀刻绝缘膜背面露出导体柱，并且通过喷墨形成上层中的导电图案。在这种情况下，当处理导体柱时，可以通过喷墨形成本身作为掩模的抗蚀剂。

6. 发明授权

US07482743B2 Luminous device 有权
标题翻译：发光装置
公开(公告)号：US07482743B2
公开(公告)日：2009-01-27
申请号：US11592250
申请日：2006-11-03
申请人： Satoshi Seo , Keitaro Imai
发明人： Satoshi Seo , Keitaro Imai
IPC分类号： H05B33/00
CPC分类号： H01L51/5092 , H01L27/3244 , Y10S428/917
摘要： Provided is a means for improving the capability of injecting electrons from a cathode in a luminous element and solving problems about the production process thereof. In the present invention, a material having a smaller work function than a cathode material is used to form an inorganic conductive layer between the cathode and an organic compound layer. In this way, the capability of injecting electrons from the cathode can be improved. Furthermore, the film thereof can be thicker than that of a conventional cathode buffer layer formed by using an insulating material. Therefore, the film thickness can easily be controlled, and a decrease in production costs and an improvement in yield can be achieved.
摘要翻译：提供了用于提高从发光元件中的阴极注入电子的能力的手段，并且解决了关于其制造方法的问题。在本发明中，使用具有比正极材料功函数小的材料在阴极和有机化合物层之间形成无机导电层。以这种方式，可以提高从阴极注入电子的能力。此外，其膜可以比通过使用绝缘材料形成的常规阴极缓冲层的膜厚。因此，可以容易地控制膜厚度，并且可以实现生产成本的降低和产率的提高。

7. 发明授权

US07354808B2 Resist composition and method for manufacturing semiconductor device using the same 有权
标题翻译：用于制造使用该半导体器件的半导体器件的抗蚀剂组合物和方法
公开(公告)号：US07354808B2
公开(公告)日：2008-04-08
申请号：US10915428
申请日：2004-08-11
申请人： Koji Muranaka , Ryoji Nomura , Keitaro Imai , Shinji Maekawa
发明人： Koji Muranaka , Ryoji Nomura , Keitaro Imai , Shinji Maekawa
IPC分类号： H01L21/00
CPC分类号： B41J2/01 , B41J2202/09 , G02B5/201 , Y10S438/942 , Y10T428/31504
摘要： An object of the invention is to provide a resist composition which is possible to form a film by using a drawing means and which functions as a protective film used at the time of etching, adding impurities, or the like. In addition, an object is also to provide a manufacturing step of a semiconductor device in which a substance with high safety and that is easily treated can be used as a peeling solution, and which pays attention to an environment. A resist composition of the invention contains water-soluble homopolymer, water, or a solvent that has compatibility with water and can dissolve the water-soluble homopolymer. In addition, a method for manufacturing the semiconductor device of the invention has a step of removing the protective film formed by discharging the resist composition of the invention by using a drawing means with water after using it.
摘要翻译：本发明的目的是提供一种抗蚀剂组合物，其可以通过使用拉伸装置形成膜，并且其作为在蚀刻时使用的保护膜，添加杂质等。此外，目的还在于提供一种半导体装置的制造工序，其中可以使用具有高安全性且易于处理的物质作为剥离溶液，并注意环境。本发明的抗蚀剂组合物含有水溶性均聚物，水或与水相容并能溶解水溶性均聚物的溶剂。此外，本发明的半导体装置的制造方法具有通过在使用了本发明的抗蚀剂组合物后通过使用拉伸装置除去形成的保护膜的步骤。

8. 发明申请

US20070046196A1 Luminous device 有权
标题翻译：发光装置
公开(公告)号：US20070046196A1
公开(公告)日：2007-03-01
申请号：US11592250
申请日：2006-11-03
申请人： Satoshi Seo , Keitaro Imai
发明人： Satoshi Seo , Keitaro Imai
IPC分类号： H01L51/00
CPC分类号： H01L51/5092 , H01L27/3244 , Y10S428/917
摘要： Provided is a means for improving the capability of injecting electrons from a cathode in a luminous element and solving problems about the production process thereof. In the present invention, a material having a smaller work function than a cathode material is used to form an inorganic conductive layer between the cathode and an organic compound layer. In this way, the capability of injecting electrons from the cathode can be improved. Furthermore, the film thereof can be thicker than that of a conventional cathode buffer layer formed by using an insulating material. Therefore, the film thickness can easily be controlled, and a decrease in production costs and an improvement in yield can be achieved.
摘要翻译：提供了用于提高从发光元件中的阴极注入电子的能力的手段，并且解决了关于其制造方法的问题。在本发明中，使用具有比正极材料功函数小的材料在阴极和有机化合物层之间形成无机导电层。以这种方式，可以提高从阴极注入电子的能力。此外，其膜可以比通过使用绝缘材料形成的常规阴极缓冲层的膜厚。因此，可以容易地控制膜厚度，并且可以实现生产成本的降低和产率的提高。

9. 发明申请

US20060246636A1 Semiconductor device and method of manufacturing the same 失效
公开(公告)号：US20060246636A1
公开(公告)日：2006-11-02
申请号：US11477376
申请日：2006-06-30
申请人： Keitaro Imai , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno
发明人： Keitaro Imai , Toru Takayama , Yuugo Goto , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L21/84 , H01L21/30 , H01L21/00 , H01L21/46
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78603 , H01L29/78621 , H01L29/78675 , H01L2221/6835 , H01L2221/68368
摘要： To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.

10. 发明申请

US20060228838A1 Display device and manufacturing method thereof 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US20060228838A1
公开(公告)日：2006-10-12
申请号：US11451071
申请日：2006-06-12
申请人： Keitaro Imai
发明人： Keitaro Imai
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： G02F1/136286 , G02F2001/136295 , H01L27/1292
摘要： Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.
摘要翻译：通常，进行光刻和各向异性蚀刻以在电极和布线等之间形成插塞，从而增加步骤数量，使吞吐量更差并且产生不必要的材料。为了解决这些问题，本发明提供一种显示装置的制造方法，其包括导电层或布线的形成步骤以及可处理较大基板的接触塞。在形成用于电连接包括多层的导电图案的插头的情况下，在基底导电层图案上形成由导体制成的柱，然后在整个表面上形成绝缘膜之后，蚀刻绝缘膜背面露出导体柱，并且通过喷墨形成上层中的导电图案。在这种情况下，当处理导体柱时，可以通过喷墨形成本身作为掩模的抗蚀剂。

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