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1. 发明授权

US06853232B2 Power switching device 有权
标题翻译：电源开关装置
公开(公告)号：US06853232B2
公开(公告)日：2005-02-08
申请号：US10446998
申请日：2003-05-27
申请人： Rainald Sander , Frank Kahlmann , Veli Kartal , Detlef Kalz , Helmut Hertrich
发明人： Rainald Sander , Frank Kahlmann , Veli Kartal , Detlef Kalz , Helmut Hertrich
IPC分类号： H01L27/04 , H01L29/739 , H01L29/78 , H02M1/08 , H03K17/082 , H03K17/16 , H03K5/08
CPC分类号： H03K17/0822 , H03K17/166
摘要： A power switching device has a power switching transistor connected in series in a load circuit with an inductive load portion and a commutation circuit. The commutation circuit is connected in parallel with the gate-drain or base-collector path of the power transistor and has a first Zener diode, which determines the commutation clamping voltage for switching on the power switching transistor during commutation, and an oppositely biased normal diode that is connected in series with the first Zener diode. The commutation circuit further has control elements in order to reduce, during a short time, the commutation clamping voltage at the beginning of each commutation cycle or after an adjustable delay from the beginning of each commutation cycle.
摘要翻译：功率开关器件具有串联连接在具有感性负载部分和换向电路的负载电路中的功率开关晶体管。换向电路与功率晶体管的栅极 - 漏极或基极 - 集电极路并联连接，并具有第一齐纳二极管，其确定换向期间切换功率开关晶体管的换向钳位电压，以及相反偏置的正常二极管它与第一个齐纳二极管串联连接。换向电路还具有控制元件，以便在短时间内在每个换向循环开始时或在从每个换向循环开始之后的可调延迟之后减少换向钳位电压。

2. 发明申请

US20120176164A1 Circuit Arrangement Having a Load Transistor and a Voltage Limiting Circuit and Method for Driving a Load Transistor 有权
标题翻译：具有负载晶体管和限压电路的电路布置及驱动负载晶体管的方法
公开(公告)号：US20120176164A1
公开(公告)日：2012-07-12
申请号：US13423121
申请日：2012-03-16
申请人： Christian Arndt , Veli Kartal , Rainald Sander
发明人： Christian Arndt , Veli Kartal , Rainald Sander
IPC分类号： H03K3/00
CPC分类号： H03K17/0822 , H01L23/62 , H01L24/48 , H01L27/0255 , H01L2224/32145 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/12035 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention relates to a circuit arrangement having the following features: a load transistor having a control connection and a first and second load connection, a drive connection coupled to the control connection of the load transistor and serving for the application of a drive signal, a voltage limiting circuit connected between one of the load connections and the drive connection of the transistor, a deactivation circuit connected to the voltage limiting circuit and serving for the deactivation of the voltage limiting circuit in a manner dependent on a deactivation signal, which is dependent on a load current through the load transistor and/or on a drive voltage of the load transistor.
摘要翻译：本发明涉及具有以下特征的电路装置：具有控制连接和第一和第二负载连接的负载晶体管，耦合到负载晶体管的控制连接并用于施加驱动信号的驱动连接，连接在负载连接中的一个和晶体管的驱动连接之间的电压限制电路，连接到电压限制电路并且以取决于去激活信号的方式停用电压限制电路的去激活电路，该停用电路是依赖的通过负载晶体管的负载电流和/或负载晶体管的驱动电压。

3. 发明申请

US20050088216A1 Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistor 审中-公开
标题翻译：具有负载晶体管的电路装置和用于驱动负载晶体管的电压限制电路和方法
公开(公告)号：US20050088216A1
公开(公告)日：2005-04-28
申请号：US10927949
申请日：2004-08-27
申请人： Christian Arndt , Veli Kartal , Rainald Sander
发明人： Christian Arndt , Veli Kartal , Rainald Sander
IPC分类号： H01L23/62 , H01L27/02 , H03K17/082 , H03L5/00
CPC分类号： H03K17/0822 , H01L23/62 , H01L24/48 , H01L27/0255 , H01L2224/32145 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/12035 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistor The present invention relates to a circuit arrangement having the following features: a load transistor (T) having a control connection (G) and a first and second load connection (D, S), a drive connection (IN) coupled to the control connection (G) of the load transistor (T) and serving for the application of a drive signal (Sin), a voltage limiting circuit (10) connected between one (D) of the load connections and the drive connection (G) of the transistor, a deactivation circuit (20) connected to the voltage limiting circuit (10) and serving for the deactivation of the voltage limiting circuit (10) in a manner dependent on a deactivation signal (S22; S23), which is dependent on a load current (Id) through the load transistor (T) and/or on a drive voltage (Vgs) of the load transistor (T). The invention furthermore relates to a method for driving a load transistor.
摘要翻译：具有负载晶体管的电路装置和用于驱动负载晶体管的电压限制电路和方法技术领域本发明涉及具有以下特征的电路装置：具有控制连接（G）的负载晶体管（T）和第一和第二负载连接（D，S），耦合到负载晶体管（T）的控制连接（G）并且用于施加驱动信号（Sin）的驱动连接（IN），电压限制电路（10）负载连接的一个（D）和晶体管的驱动连接（G），连接到电压限制电路（10）的停用电路（20）并且以一种方式用于禁止电压限制电路（10）取决于通过负载晶体管（T）和/或负载晶体管（T）的驱动电压（Vgs）的负载电流（Id）的去激活信号（S22; S23）。本发明还涉及用于驱动负载晶体管的方法。

4. 发明授权

US08710894B2 Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistor 有权
标题翻译：具有负载晶体管的电路装置和用于驱动负载晶体管的电压限制电路和方法
公开(公告)号：US08710894B2
公开(公告)日：2014-04-29
申请号：US13423121
申请日：2012-03-16
申请人： Christian Arndt , Veli Kartal , Rainald Sander
发明人： Christian Arndt , Veli Kartal , Rainald Sander
IPC分类号： H03K5/08
CPC分类号： H03K17/0822 , H01L23/62 , H01L24/48 , H01L27/0255 , H01L2224/32145 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/12035 , H01L2924/13091 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention relates to a circuit arrangement having the following features: a load transistor having a control connection and a first and second load connection; a drive connection coupled to the control connection of the load transistor and serving for the application of a drive signal; a voltage limiting circuit connected between one of the load connections and the drive connection of the transistor; and a deactivation circuit connected to the voltage limiting circuit and serving for the deactivation of the voltage limiting circuit in a manner dependent on a deactivation signal, which is dependent on a load current through the load transistor and/or on a drive voltage of the load transistor.
摘要翻译：本发明涉及具有以下特征的电路装置：具有控制连接和第一和第二负载连接的负载晶体管; 耦合到负载晶体管的控制连接并用于施加驱动信号的驱动连接; 连接在负载连接之一和晶体管的驱动连接之间的电压限制电路; 以及去激活电路，其连接到所述电压限制电路并且以取决于取消激活信号的方式停止所述电压限制电路，所述去激活信号取决于通过所述负载晶体管的负载电流和/或所述负载的驱动电压晶体管。

5. 发明申请

US20130026829A1 Driving an Electronic Switch 有权
标题翻译：驾驶电子开关
公开(公告)号：US20130026829A1
公开(公告)日：2013-01-31
申请号：US13192905
申请日：2011-07-28
申请人： Veli Kartal
发明人： Veli Kartal
IPC分类号： B60L1/00 , H03K17/693
CPC分类号： H03K17/063 , H03K2017/066 , H03K2217/0063
摘要： An electronic circuit includes an electronic switch with a control terminal and a load path between a first and a second load terminal, and a drive circuit with an output terminal coupled to the control terminal of the electronic switch. The drive circuit includes a first input terminal and a second input terminal, a first drive unit coupled between the first input terminal and the output terminal and including a charge pump and drive unit, and a second drive unit coupled between the second input terminal and the output terminal and including a further electronic switch coupled between the output terminal and a terminal for a reference potential.
摘要翻译：电子电路包括具有控制端子和第一和第二负载端子之间的负载路径的电子开关，以及具有耦合到电子开关的控制端子的输出端子的驱动电路。所述驱动电路包括第一输入端子和第二输入端子，第一驱动单元，耦合在所述第一输入端子和所述输出端子之间，并且包括电荷泵和驱动单元，以及耦合在所述第二输入端子和所述第二输入端子之间的第二驱动单元输出端子，并且包括耦合在输出端子和用于参考电位的端子之间的另外的电子开关。

6. 发明授权

US07705369B2 High-voltage diode with optimized turn-off method and corresponding optimization method 有权
标题翻译：具有优化关断方式的高压二极管及相应的优化方法
公开(公告)号：US07705369B2
公开(公告)日：2010-04-27
申请号：US10999111
申请日：2003-03-27
申请人： Veli Kartal , Hans-Joachim Schulze , Anton Mauder , Elmar Falck
发明人： Veli Kartal , Hans-Joachim Schulze , Anton Mauder , Elmar Falck
IPC分类号： H01L29/861
CPC分类号： H01L21/263 , H01L29/32 , H01L29/36 , H01L29/8611
摘要： The invention relates to a high-voltage diode having a specifically optimized switch-off behavior. A soft recovery behavior of the component can be obtained without increasing the forward losses by adjusting in a specific manner the service life of the charge carriers by irradiating only the n+-conducting cathode emitter (6) side or both sides, i.e. the n+-conducting cathode emitter (6) side and the p+-conducting anode emitter (4) side.
摘要翻译：本发明涉及具有特别优化的关断行为的高压二极管。通过仅仅照射n + - 导电阴极发射体（6）侧或两侧（即n +导体），以特定方式调节电荷载体的使用寿命，可以获得组分的软恢复行为，而不增加前向损耗阴极发射极（6）侧和p +导体阳极发射极（4）侧。

7. 发明授权

US09112494B2 Charge pump driven electronic switch with rapid turn off 有权
标题翻译：电荷泵驱动电子开关快速关闭
公开(公告)号：US09112494B2
公开(公告)日：2015-08-18
申请号：US13192905
申请日：2011-07-28
申请人： Veli Kartal
发明人： Veli Kartal
IPC分类号： H03K17/693 , H03K17/06
CPC分类号： H03K17/063 , H03K2017/066 , H03K2217/0063
摘要： An electronic circuit includes an electronic switch with a control terminal and a load path between a first and a second load terminal, and a drive circuit with an output terminal coupled to the control terminal of the electronic switch. The drive circuit includes a first input terminal and a second input terminal, a first drive unit coupled between the first input terminal and the output terminal and including a charge pump and drive unit, and a second drive unit coupled between the second input terminal and the output terminal and including a further electronic switch coupled between the output terminal and a terminal for a reference potential.
摘要翻译：电子电路包括具有控制端子和第一和第二负载端子之间的负载路径的电子开关，以及具有耦合到电子开关的控制端子的输出端子的驱动电路。所述驱动电路包括第一输入端子和第二输入端子，第一驱动单元，耦合在所述第一输入端子和所述输出端子之间，并且包括电荷泵和驱动单元，以及耦合在所述第二输入端子和所述第二输入端子之间的第二驱动单元输出端子，并且包括耦合在输出端子和用于参考电位的端子之间的另外的电子开关。

8. 发明授权

US06815793B2 Body of a semiconductor material with a reduced mean free path length 有权
标题翻译：具有减小的平均自由路径长度的半导体材料的主体
公开(公告)号：US06815793B2
公开(公告)日：2004-11-09
申请号：US10377071
申请日：2003-02-28
申请人： Veli Kartal , Hans-Joachim Schulze
发明人： Veli Kartal , Hans-Joachim Schulze
IPC分类号： H01L2972
CPC分类号： H01L29/7824 , H01L29/32 , H01L29/861
摘要： A body (1) consisting of a doped semiconductor material with a pn junction (10) and an area (2) of reduced mean free path length (&lgr;r) for free charge carriers is disclosed. Said area (2) has sections (21, 22) which succeed each other in at least one specified direction (x, y, z) and between which there is at least one region (23), containing a mean free path length (&lgr;0) for the free charge carriers that is larger in relation to the reduced mean free path length (&lgr;r).

9. 发明授权

US09608128B2 Body of doped semiconductor material having scattering centers of non-doping atoms of foreign matter disposed between two layers of opposing conductivities 有权
公开(公告)号：US09608128B2
公开(公告)日：2017-03-28
申请号：US10392509
申请日：2003-03-20
申请人： Veli Kartal , Hans-Joachim Schulze
发明人： Veli Kartal , Hans-Joachim Schulze
IPC分类号： H01L29/36 , H01L29/861 , H01L29/32
CPC分类号： H01L29/861 , H01L29/32 , H01L29/36
摘要： A method for producing a body (1) consisting of doped semiconductor material having a defined mean free path length (lambda n) for free charge carriers (CP), and a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n) is disclosed. An epitactic crystal layer (20) consisting of doped semiconductor material is produced on a substrate crystal (10) consisting of semiconductor material having the defined mean free path length (lambda n), said crystal layer having, at least locally, a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n). The body (1) can also be produced by joining two crystal bodies (10′, 10″) consisting of doped semiconductor material.

10. 发明申请

US20050230702A1 High-voltage diode with optimized turn-off method and corresponding optimization method 有权
标题翻译：具有优化关断方式的高压二极管及相应的优化方法
公开(公告)号：US20050230702A1
公开(公告)日：2005-10-20
申请号：US10999111
申请日：2004-11-29
申请人： Veli Kartal , Hans-Joachim Schulze , Anton Mauder , Elmar Falck
发明人： Veli Kartal , Hans-Joachim Schulze , Anton Mauder , Elmar Falck
IPC分类号： H01L29/32 , H01L29/36 , H01L29/861 , H01L29/24
CPC分类号： H01L21/263 , H01L29/32 , H01L29/36 , H01L29/8611
摘要： The invention realizes a high-voltage diode with a turn-off behavior that is optimized in a targeted manner. By means of an irradiation either only from the side of the n+-conducting cathode emitter (6) or from both sides, i.e. from the side of the n+-conducting cathode emitter (6) and from the side of the p+-conducting anode emitter (4), it is possible to obtain a soft recovery behavior of the component by means of a targeted setting of the lifetime of the charge carriers without in this case increasing the on-state losses.
摘要翻译：本发明实现了以目标方式优化的关断行为的高压二极管。通过仅从n + + / - 导电阴极发射器（6）的侧面或从两侧即即从n + 阴极发射极（6），并且从p + / - 导电阳极发射极（4）的一侧可以通过目标设定的寿命获得组件的软恢复行为在这种情况下，电荷载体增加了导通状态损耗。

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