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1. 发明申请

US20110108865A1 SILICONE BASED REFLECTIVE UNDERFILL AND THERMAL COUPLER 有权
标题翻译：基于硅胶的反射底座和热耦合器
公开(公告)号：US20110108865A1
公开(公告)日：2011-05-12
申请号：US12613924
申请日：2009-11-06
申请人： Rafael I. ALDAZ , Grigoriy BASIN , Paul S. MARTIN , Michael KRAMES
发明人： Rafael I. ALDAZ , Grigoriy BASIN , Paul S. MARTIN , Michael KRAMES
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/382 , H01L33/60 , H01L33/641 , H01L33/642 , H01L33/647 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.
摘要翻译：在一个实施例中，倒装芯片LED形成有从其n层和p层的底表面延伸的高密度金柱。金柱结合到底座电极。然后将底部填充材料模制以填充LED底部和底座之间的空隙。底部填充物包含硅氧烷模塑料基料和约70-80重量％的氧化铝（或其它合适的材料）。氧化铝的导热系数比典型的硅胶底部填充物的热导率高出约25倍，这主要是二氧化硅。氧化铝是白色粉末。底部填充剂还可以含有约5-10重量％的TiO 2以增加反射率。 LED灯由反射底层填充物向上反射，底部填充物有效地将热量传导到底座。底部填充物也随机化光散射，改善光提取。分布式金柱和底层填料在生长衬底剥离过程中支持LED层。

2. 发明申请

US20110198780A1 LIGHT EMITTING DEVICE WITH MOLDED WAVELENGTH CONVERTING LAYER 有权
标题翻译：具有成型波长转换层的发光装置
公开(公告)号：US20110198780A1
公开(公告)日：2011-08-18
申请号：US12706149
申请日：2010-02-16
申请人： Grigoriy BASIN , Paul S. MARTIN
发明人： Grigoriy BASIN , Paul S. MARTIN
IPC分类号： B29C45/14
CPC分类号： H01L33/504 , B29C43/18 , H01L25/0753 , H01L33/005 , H01L33/0075 , H01L33/50 , H01L33/56 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A flexible film comprising a wavelength converting material is positioned over a light source. The flexible film is conformed to a predetermined shape. In some embodiments, the light source is a light emitting diode mounted on a support substrate. The diode is aligned with an indentation in a mold such that the flexible film is disposed between the support substrate and the mold. Transparent molding material is disposed between the support substrate and the mold. The support substrate and the mold are pressed together to cause the molding material to fill the indentation. The flexible film conforms to the shape of the light source or the mold.
摘要翻译：包括波长转换材料的柔性膜位于光源上。柔性膜符合预定的形状。在一些实施例中，光源是安装在支撑衬底上的发光二极管。二极管与模具中的压痕对准，使得柔性膜设置在支撑基板和模具之间。透明成型材料设置在支撑基板和模具之间。将支撑基板和模具压在一起以使模制材料填充凹陷。柔性膜符合光源或模具的形状。

3. 发明申请

US20100207157A1 LED ASSEMBLY HAVING MAXIMUM METAL SUPPORT FOR LASER LIFT-OFF OF GROWTH SUBSTRATE 有权
标题翻译：具有最大金属支持的LED组件用于增长基板的激光提升
公开(公告)号：US20100207157A1
公开(公告)日：2010-08-19
申请号：US12767845
申请日：2010-04-27
申请人： Stefano SCHIAFFINO , Daniel A. STEIGERWALD , Mari HOLCOMB , Grigoriy BASIN , Paul MARTIN , John EPLER
发明人： Stefano SCHIAFFINO , Daniel A. STEIGERWALD , Mari HOLCOMB , Grigoriy BASIN , Paul MARTIN , John EPLER
IPC分类号： H01L33/62
CPC分类号： H01L33/0079 , H01L33/22 , H01L33/32 , H01L33/382 , H01L33/40 , H01L33/62 , H01L2224/73204 , H01L2924/01322 , H01L2924/00
摘要： Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount.
摘要翻译：描述了在将LED管芯接合到基座之后，使用激光剥离工艺形成LED结构以去除生长衬底（例如，蓝宝石）的工艺。 LED芯片的下侧形成有基本上在同一平面中的阳极和阴极电极，其中电极覆盖LED结构的后表面的至少85％。底座具有基本上在同一平面中的阳极和阴极电极的相应布局。 LED芯片电极和基座电极被超声波焊接在一起，使得LED芯片的整个表面几乎被电极和底座支撑。也可以使用其它粘合技术。没有使用底层填料。然后使用激光剥离工艺从LED层去除形成LED结构顶部的生长衬底。在激光剥离过程中产生的极高的压力不会由于电极和基座的LED层的大面积支撑而损坏LED层。

4. 发明申请

US20110121331A1 WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：波长转换半导体发光器件
公开(公告)号：US20110121331A1
公开(公告)日：2011-05-26
申请号：US12624156
申请日：2009-11-23
申请人： Dmitri SIMONIAN , Grigoriy BASIN
发明人： Dmitri SIMONIAN , Grigoriy BASIN
IPC分类号： H01L33/00
CPC分类号： H01L33/504 , H01L25/167 , H01L33/56 , H01L33/641 , H01L33/644 , H01L2924/0002 , H01L2924/00
摘要： A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.
摘要翻译：一种器件包括半导体结构，其包括设置在n型区域和p型区域之间的发光层。发光材料位于由发光层发射的光的路径中。热耦合材料设置在透明材料中。热耦合材料的导热率大于透明材料的热导率。热耦合材料被定位成散发来自发光材料的热量。

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