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1. 发明专利

JPH0661142A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0661142A
公开(公告)日：1994-03-04
申请号：JP20993492
申请日：1992-08-06
申请人： RYODEN SEMICONDUCTOR SYST ENG , MITSUBISHI ELECTRIC CORP
发明人： MATSUZAKI HIKARI , OSAKI SABURO
IPC分类号： H01L21/20 , H01L21/02 , H01L21/265 , H01L27/12
摘要： PURPOSE:To form a large-particle diameter polycrystalline silicon film from an amorphous silicon film on an insulating film in fewer process steps. CONSTITUTION:A silicon oxide film 21 and an amorphous silicon film 61 are formed in order on the main surface of a semiconductor substrate 101 and thereafter, phosphorus is selectively ion-implanted in the film 61 to form a plurality of ion-implanted regions 71 and after that, the substrate 101 is subjected to heat treatment in a non-oxidizing atmosphere. In such a way, a semiconductor device is constituted.

2. 发明专利

JPH0661154A SEMICONDUCTOR MANUFACTURING DEVICE 失效
公开(公告)号：JPH0661154A
公开(公告)日：1994-03-04
申请号：JP20993592
申请日：1992-08-06
申请人： RYODEN SEMICONDUCTOR SYST ENG , MITSUBISHI ELECTRIC CORP
发明人： UDA YUKIO , OSAKI SABURO
IPC分类号： C30B25/14 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/31
摘要： PURPOSE:To obtain a semiconductor manufacturing device which is able to stably form a film and high in product yield by a method wherein source is surely controlled in flow rate by a mass flow controller even just after the feed of source is restarted by opening a valve located before a process chamber. CONSTITUTION:Carrier gas inside a source transport piping 3 is cooled down to partially liquidize source contained in it, and a low temperature trap 8 which recovers liquidized source in carrier gas inside the piping 3 and discharges it out of the piping 3 is provided to the front-stage of a mass flow controller 5.

3. 发明专利

JPH04335913A HEAT TREATMENT AND CHEMICAL TREATMENT DEVICE 失效
公开(公告)号：JPH04335913A
公开(公告)日：1992-11-24
申请号：JP10916091
申请日：1991-05-14
申请人： RYODEN SEMICONDUCTOR SYST ENG , MITSUBISHI ELECTRIC CORP
发明人： MATSUZAKI HIKARI , OSAKI SABURO
IPC分类号： F23G7/06
摘要： PURPOSE:To keep a pressure loss low and reduce a frequency of cleaning and replacing an air discharging pipe and the like by a method wherein non-reacted chemical substances in the discharged gas out of a main body of a reaction furnace are thermally decomposed and then removed. CONSTITUTION:Gas containing some chemical substances is fed into a main body 3 of a reaction furnace storing processed material and the processed material is applied with a predetermined thermal processing and a chemical processing under a process control system. A mechanism 10 for processing the non-reacted chemical substances is placed in the midway part of an air discharging pipe out of the main body of the reaction furnace. This processing mechanism is comprised of an outer combustion mechanism 14 for forcedly and thermally decomposing non-reacted gas containing some chemical substances after being processed at the main body of the reaction furnace and a dust collecting filter mechanism 12.

4. 发明专利

JPH0451559A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0451559A
公开(公告)日：1992-02-20
申请号：JP16062590
申请日：1990-06-19
申请人： MITSUBISHI ELECTRIC CORP
发明人： NISHIKAWA KIICHI , OSAKI SABURO
IPC分类号： H01L27/04 , H01L21/822
摘要： PURPOSE:To obtain a resistance value having arbitrary temperature dependence by providing the following: a semiconductor substrate of a first conductivity type; a diffusion resistance layer, of a second conductivity type, which has been formed on the semiconductor substrate; and an amorphous layer formed in one part in the diffusion resistance layer. CONSTITUTION:N-type impurities are implanted, by an ion implantation operation, into a prescribed region on a p-type semiconductor crystal substrate 1. Then, inert ions of argon or the like are implanted additionally into the prescribed region. When the inert ions are implanted, the p-type semiconductor crystal substrate 1 is made amorphous partially; an amorphous layer 10 is formed. Then, a heat treatment is executed; the n-type impurities are diffused thermally; a diffusion resistance layer 2 is formed. Then, an insulating film 7 is formed on the surface of the p-type semiconductor crystal substrate 1; contact holes 6 are made; interconnections are executed on both ends of the diffusion resistance layer 2 via the contact holes 6; a semiconductor device in which the diffusion resistance layer 2 and the amorphous layer 10 have been connected in parallel is obtained. Thereby, it is possible to obatin the semiconductor device whose surface is flat and which has been provied with a resistance of arbitary temperature dependence.

5. 发明专利

JPH03261059A ION IMPLANTING DEVICE 失效
公开(公告)号：JPH03261059A
公开(公告)日：1991-11-20
申请号：JP5841090
申请日：1990-03-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKAHASHI TAKETO , OSAKI SABURO , MIYAZAKI JUNJI
IPC分类号： H01J37/08 , H01J37/317 , H01L21/265
摘要： PURPOSE:To improve uniformity of a quantity of ion implantation and prevent electrostatic breakdown of an insulating film by installing film for charge exchange in the middle of an ion beam route, and irradiating an ion beam having passed through this film to a semiconductor wafer. CONSTITUTION:A plurality of semiconductor wafers W are mounted on the disk 1 in an ion implantation chamber and rotatably operated at a high speed. An ion beam B passes through a metal film 6 arranged in the middle of its route and loses positive charge due to its charge exchange action so that it is neutralized and irradiates the wafer W. The current of the beam B is measured by an ammeter 7 connected to the film 6 to control a quantity of ion implantation.

6. 发明专利

JPH01214139A FORMATION OF CONDUCTIVE POLYCRYSTALLINE SILICON FILM 失效
公开(公告)号：JPH01214139A
公开(公告)日：1989-08-28
申请号：JP4001588
申请日：1988-02-23
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIKI TOSHIHIRO , TAKAHASHI TAKETO , OSAKI SABURO
IPC分类号： H01L23/52 , H01L21/265 , H01L21/3205
摘要： PURPOSE:To improve conductivity by implanting a Si film on a substrate with a conductive impurity ion and with a predetermined amount of a Si ion to make the Si film amorphous, and activating the impurity ions by a heat treatment and recrystallizing the same. CONSTITUTION:A polycrystalline Si film 2 is formed on a substrate 1 which is implanted with a 6X10 atoms/cm or more Si ion 3. Hereby, at least a partial layer in the Si film 2 is made amorphous. Then, the film 2 is implanted with a conductive impurity ion 4 such as As. The film 2 is heat-treated in a non-oxidizable atmosphere such as nitrogen to actuate the implanted impurity ion and convert the amorphous layer to a recrystallized layer 2a. The recrystallized layer 2a is grown to have a particle diameter 3-5 times that before it is made amorphous, thereby being improved the conductivity. In contrast, a layer 2b in the film 2, which is not made amorphous, is not recrystallized.

7. 发明专利

JPS6321824A ION IMPLANTATION DEVICE 失效
公开(公告)号：JPS6321824A
公开(公告)日：1988-01-29
申请号：JP16712486
申请日：1986-07-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： OSAKI SABURO , TAKAHASHI TAKETO
IPC分类号： H01L21/265 , H01J37/317
摘要： PURPOSE:To enable the implantation of ions into the entire side wall surfaces with excellent controllability and uniformity, by making variable the angle of introduction of impurity ions into the side wall surface of a groove structure formed in the main surface of a sample. CONSTITUTION:A semiconductor substrate 7 is supported in inclination at an angle theta deg.to a vertical line Y1 perpendicular to an ion implantation axis 7a in accordance with the form (ratio between the width and the depth) of groove structures 71 and 72. Concretely, the main surface 7a is rotated by means of a rotating mechanism 8 while ion beams 6 are showered on the main surface 7a, and thereby the formation of an impurity layer on the entire surfaces of the side walls of the groove structures 71 and 72 by ion implantation is enabled. In other words, an angle of introduction of ions into the surfaces of the side walls of the groove structures 71 and 72 is made variable by the rotation of the main surface 7a around the intersecting point with the ion implantation axis 6a as the center. Accordingly, by finding and setting the angle theta on the basis of the ratio between the width and the depth of the grooves so that it can realize the introduction of ions into the entire side wall surfaces of the groove structures 71 and 72, it becomes possible to form the impurity layer on the entire side wall surfaces by ion implantation.

8. 发明专利

JPH08203467A ION DOPING DEVICE 失效
公开(公告)号：JPH08203467A
公开(公告)日：1996-08-09
申请号：JP1114295
申请日：1995-01-27
申请人： MITSUBISHI ELECTRIC CORP , ASAHI GLASS CO LTD
发明人： MORITA HIROMASA , OSAKI SABURO
IPC分类号： C23C14/48 , C23C14/56 , H01J37/317 , H01L21/265
摘要： PURPOSE: To remarkably reduce mixing of a treatment gas to a before-treatment chamber by opening a separating valve only when pressure in an ion doping chamber is lower than that in the before-treatment chamber. CONSTITUTION: When a substrate 6 before treatment is carried in a treatment chamber 4, a before-treatment chamber 4 is evacuated through an exhaust pipe 14 and an ion doping chamber 1 is also evacuated through an exhaust pipe 11, then a separating valve 9 is opened. The substrate 6 before treatment is carried in and fixed to a substrate holder 3 in the doping chamber 1, the valve 9 is closed, and gas for treatment is introduced through a gas introducing pipe 10. After pressure is controlled in a desired value by opening/closing an exhaust valve 12, ions produced in an ion source 3 are doped in the substrate 6. When the treatment is finished, the ion source 2 is stopped, and ion introduction from the introducing pipe 10 is stopped. An interlock 16 is set so that the valve 9 can be opened only when the pressure in the doping chamber is lower than that in the before-treatment chamber 4.

9. 发明专利

JPH08148682A LIQUID CRYSTAL DISPLAY ELEMENT, AND ITS MANUFACTURE 失效
公开(公告)号：JPH08148682A
公开(公告)日：1996-06-07
申请号：JP28181094
申请日：1994-11-16
申请人： MITSUBISHI ELECTRIC CORP , ASAHI GLASS CO LTD
发明人： OSAKI SABURO , MORITA HIROMASA , MATSUURA MEGUMI
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/265 , H01L21/336 , H01L29/786
摘要： PURPOSE: To improve the property of a liquid crystal display element by stabilizing the electric connection between an electrode wiring and an n-type amorphous silicon layer, and also, removing the electric rectification property of the n-type amorphous silicon layer. CONSTITUTION: This liquid crystal display element is one which is equipped, on glass board, with a gate electrode 2, a gate insulating film 3, an i-type amorphous silicon layer 4, an n-type amorphous silicon layer 10 being made by doping one part of the i-type amorphous silicon layer 4 with impurity ions, an upper protective film having an opening 11 on the n-type amorphous silicon layer 10, and an electrode wiring connected to the n-type amorphous silicon layer 10 through the opening 11, and the concentration of the impurities on the surface of the n-type amorphous silicon layer 10 is raised more than inside.

10. 发明专利

JPH05218439A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH05218439A
公开(公告)日：1993-08-27
申请号：JP1627192
申请日：1992-01-31
申请人： MITSUBISHI ELECTRIC CORP
发明人： OSAKI SABURO
IPC分类号： H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a transistor with a source, a channel and a drain, which are constituted with a vertical type, to contrive an increase in the integration degree of a MOS LSI. CONSTITUTION:A recessed part is formed in the surface of a single crystal silicon substrate 20 and a region 26 which comprises a source, 21, a channel 25 and a drain 22 all vertically arranged in the recessed part and thereon, and whose periphery covered with a silicon oxide film 27 is formed. After that, a gate electrode 28 is formed via the film 27, whereby a vertical transistor is obtained.

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