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1. 发明授权

US11829069B2 Photoresist compositions and methods 有权
公开(公告)号：US11829069B2
公开(公告)日：2023-11-28
申请号：US16236725
申请日：2018-12-31
申请人： Rohm and Haas Electronic Materials LLC
发明人： Joshua Kaitz , Tomas Marangoni , Emad Aqad , Amy M. Kwok , Mingqi Li , Thomas Cardolaccia , Choong-Bong Lee , Ke Yang , Cong Liu
IPC分类号： G03F7/11 , G03F7/004 , G03F7/038 , G03F7/039 , G03F7/20 , G03F7/16 , G03F7/32 , G03F7/38 , C09D133/16 , C08F220/24 , C08F220/28 , C08F220/18
CPC分类号： G03F7/11 , C08F220/24 , C08F220/283 , C09D133/16 , G03F7/0045 , G03F7/0046 , G03F7/038 , G03F7/039 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/322 , G03F7/38 , C08F220/1808
摘要： New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

2. 发明公开

US20230314934A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS 审中-公开
公开(公告)号：US20230314934A1
公开(公告)日：2023-10-05
申请号：US17710126
申请日：2022-03-31
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Emad Aqad , Jong Keun Park , Yinjie Cen , Choong-Bong Lee
IPC分类号： G03F7/004 , C07C381/12 , C07C255/19 , C07C57/42
CPC分类号： G03F7/0045 , C07C381/12 , C07C255/19 , C07C57/42
摘要： A photoactive compound of formula (1a) or (1b):

wherein R1 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C6-30 aryl, or substituted or unsubstituted C3-30 heteroaryl comprising an aromatic ring heteroatom chosen from nitrogen, oxygen, or a combination thereof; R2 and R3 are as provided herein; R4 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C3-30 heterocycloalkyl, substituted or unsubstituted C6-30 aryl, or substituted or unsubstituted C3-30 heteroaryl; and M+ is an organic cation.

3. 发明授权

US11809077B2 Photoresist compositions and pattern formation methods 有权
公开(公告)号：US11809077B2
公开(公告)日：2023-11-07
申请号：US17198749
申请日：2021-03-11
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Thomas Cardolaccia , Jason A. DeSisto , Choong-Bong Lee , Mingqi Li , Tomas Marangoni , Chunyi Wu , Cong Liu , Gregory P. Prokopowicz
IPC分类号： G03F7/004 , C08F220/28 , C08F220/18 , G03F7/027
CPC分类号： G03F7/0045 , C08F220/18 , C08F220/281 , G03F7/027
摘要： A photoresist composition comprises a first polymer formed by free radical polymerization. The first polymer comprises polymerized units formed from a monomer that comprises an ethylenically unsaturated double bond and an acid-labile group; a photoacid generator; a quencher of formula (1):

and a solvent.

4. 发明申请

US20220019143A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS 有权
公开(公告)号：US20220019143A1
公开(公告)日：2022-01-20
申请号：US17339522
申请日：2021-06-04
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Emad Aqad , Brandon Wenning , Choong-Bong Lee , James W. Thackeray , Ke Yang , James F. Cameron
IPC分类号： G03F7/039 , G03F7/004 , G03F7/038 , C08F220/18 , C08F220/28 , C08F212/14
摘要： A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.

5. 发明公开

US20230213862A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS 审中-公开
公开(公告)号：US20230213862A1
公开(公告)日：2023-07-06
申请号：US18085098
申请日：2022-12-20
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Li Cui , Suzanne M. Coley , Emad Aqad , Yinjie Cen , Jong Keun Park , Choong-Bong Lee , James F. Cameron
IPC分类号： G03F7/039
CPC分类号： G03F7/0392
摘要： A photoresist composition, comprising: a first polymer comprising: a first repeating unit comprising a hydroxyaryl group; a second repeating unit comprising a first acid-labile group; and a third repeating unit comprising a first base-soluble group having a pKa of 12 or less, and not comprising a hydroxyaryl group; wherein the first, second, and third repeating units of the first polymer are different from each other, and the first polymer is free of lactone groups; a second polymer comprising: a first repeating unit comprising a second acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a second base-soluble group having a pKa of 12 or less; wherein the first, second, and third repeating units of the second polymer are structurally different from each other; and a solvent, wherein the first polymer and the second polymer are different from each other.

6. 发明授权

US09703200B2 Photolithographic methods 有权
公开(公告)号：US09703200B2
公开(公告)日：2017-07-11
申请号：US14588396
申请日：2014-12-31
申请人： Rohm and Haas Electronic Materials LLC
发明人： Jong Keun Park , Christopher Nam Lee , Cecily Andes , Choong-Bong Lee
IPC分类号： G03F7/38 , G03F7/11 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/38 , G03F7/0045 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/30
摘要： Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry.

7. 发明授权

US09581904B2 Photoresist overcoat compositions 有权
标题翻译：光刻胶外涂层组合物
公开(公告)号：US09581904B2
公开(公告)日：2017-02-28
申请号：US14927357
申请日：2015-10-29
申请人： Rohm and Haas Electronic Materials LLC
发明人： Choong-Bong Lee , Stefan J. Caporale , Jason A. DeSisto , Jong Keun Park , Cong Liu , Cheng-Bai Xu , Cecily Andes
IPC分类号： G03F7/039 , G03F7/38 , G03F7/11 , G03F7/004 , G03F7/075 , G03F7/09 , G03F7/20 , C09D4/06 , C09D133/06
CPC分类号： G03F7/11 , C09D4/06 , C09D133/06 , G03F7/0046 , G03F7/0752 , G03F7/091 , G03F7/2041 , C08F220/18
摘要： Photoresist overcoat compositions are provided. The compositions comprise: a matrix polymer, an additive polymer a basic quencher and an organic solvent. The additive polymer has a lower surface energy than a surface energy of the matrix polymer, and the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition. The compositions have particular applicability in the semiconductor manufacturing industry for use in negative tone development processes.
摘要翻译：提供光刻胶外涂层组合物。组合物包括：基质聚合物，添加剂聚合物，碱性猝灭剂和有机溶剂。添加剂聚合物具有比基体聚合物的表面能更低的表面能，并且添加剂聚合物以基于外涂层组合物的总固体的1至20重量％的量存在于外涂层组合物中。该组合物在用于负色调发展方法的半导体制造业中具有特别的适用性。

8. 发明申请

US20190204743A1 PHOTORESIST COMPOSITIONS AND METHODS 审中-公开
公开(公告)号：US20190204743A1
公开(公告)日：2019-07-04
申请号：US16236725
申请日：2018-12-31
申请人： Rohm and Haas Electronic Materials LLC
发明人： Joshua Kaitz , Tomas Marangoni , Emad Aqad , Amy M. Kwok , Mingqi Li , Thomas Cardolaccia , Choong-Bong Lee , Ke Yang , Cong Liu
IPC分类号： G03F7/11 , G03F7/004 , G03F7/038 , G03F7/039 , C09D133/16 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , C08F220/28 , C08F220/24
CPC分类号： G03F7/11 , C08F220/24 , C08F220/28 , C08F2220/283 , C09D133/16 , G03F7/0045 , G03F7/038 , G03F7/039 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/322 , G03F7/38
摘要： New photoresist and topcoat compositions are provided that are useful in a variety of applications. In one aspect, new photoresist compositions are provided that comprise: (a) a first matrix polymer; (b) one or more acid generators; and (c) one or more additive compounds of Formulae (I) and/or (II).

9. 发明申请

US20160062232A1 MULTIPLE-PATTERN FORMING METHODS 有权
标题翻译：多模式形成方法
公开(公告)号：US20160062232A1
公开(公告)日：2016-03-03
申请号：US14836050
申请日：2015-08-26
申请人： Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC , Rohm and Haas Electronic Materials Korea Ltd.
发明人： Chang-Young Hong , Cheng-Bai Xu , Jung Woo Kim , Cong Liu , Shintaro Yamada , Lori Anne Joesten , Choong-Bong Lee , Phillip D. Hustad , James C. Taylor
IPC分类号： G03F7/00 , G03F7/40 , G03F7/32 , H01L21/027 , G03F7/20
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/2041 , G03F7/322 , G03F7/325 , G03F7/405 , H01L21/0273 , H01L21/0337
摘要： Multiple-pattern forming methods are provided. The methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) patternwise exposing the photoresist layer to activating radiation; (d) baking the exposed photoresist layer; (e) contacting the baked photoresist layer with a first developer to form a first resist pattern; (f) treating the first resist pattern with a coating composition comprising an expedient for switching solubility of a sidewall region of the first resist pattern from soluble to insoluble with respect to a second developer that is different from the first developer; and (g) contacting the treated first resist pattern with the second developer to remove portions of the first resist pattern, leaving the solubility-switched sidewall region to form a multiple-pattern. The methods have particular applicability to the semiconductor manufacturing industry for the formation of fine lithographic patterns.
摘要翻译：提供了多模式形成方法。所述方法包括：（a）提供包括一个或多个待图案化层的半导体衬底; （b）在待图案化的一层或多层上形成光致抗蚀剂层，其中光致抗蚀剂层由包含酸性不稳定基团的基质聚合物组成的组合物形成; 光致酸发生器; 和溶剂; （c）将光致抗蚀剂层图案化地曝光成激活辐射; （d）烘烤曝光的光致抗蚀剂层; （e）使烘烤的光致抗蚀剂层与第一显影剂接触以形成第一抗蚀剂图案; （f）用涂料组合物处理所述第一抗蚀剂图案，所述涂料组合物包括相对于不同于所述第一显影剂的第二显影剂将所述第一抗蚀剂图案的侧壁区域的可溶解度从可溶性切换到不溶性的方法; 和（g）使经处理的第一抗蚀剂图案与第二显影剂接触以除去第一抗蚀剂图案的部分，留下溶解度转换侧壁区域以形成多重图案。该方法对于形成精细光刻图案的半导体制造业具有特别的适用性。

10. 发明公开

US20240019779A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME 审中-公开
公开(公告)号：US20240019779A1
公开(公告)日：2024-01-18
申请号：US17749880
申请日：2022-05-20
申请人： ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Li Cui , Emad Aqad , Yinjie Cen , Conner A. Hoelzel , James F. Cameron , Jong Keun Park , Suzanne M. Coley , Choong-Bong Lee
IPC分类号： G03F7/004 , C07C317/22 , C07C69/78
CPC分类号： G03F7/0045 , C07C317/22 , C07C2601/16 , C07C2601/08 , C07C69/78
摘要： A compound represented by Formula (1):

wherein X is a group having a valency of r; each R1 is independently an organic group comprising an acid-labile group; m is an integer greater than or equal to 1; k is an integer from 1 to 5; and r is an integer from 2 to 10, wherein the compound is non-polymeric, and wherein Ar1, L1, L2, R2, and R3 are as defined herein.

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