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1. 发明公开

EP2986959A1 THIN-FILM ENCAPSULATED INFRARED SENSOR 有权转让
标题翻译： DÜNNSCHICHTGEKAPSELTER红外线传感器
公开(公告)号：EP2986959A1
公开(公告)日：2016-02-24
申请号：EP13821342.6
申请日：2013-12-20
申请人： Robert Bosch GmbH , Purkl, Fabian , Yama, Gary , Feyh, Ando , Graham, Andrew , Samarao, Ashwin , O'Brien, Gary
发明人： PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
IPC分类号： G01J5/04 , G01J5/20
CPC分类号： H01L31/0203 , G01J5/045 , G01J5/20 , H01L31/09 , H01L31/18
摘要： A method of fabricating a bolometer infrared sensor includes depositing a first sacrificial layer on a surface of a substrate over a sensor region, and forming an absorber structure for the infrared sensor on top of the first sacrificial layer. A second sacrificial layer is deposited on top of the absorber structure. An encapsulating thin film is then deposited on top of the second sacrificial layer. Vent holes are formed in the encapsulating thin film. The first and the second sacrificial layers are removed below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located via the vent holes. The vent holes are then closed in a vacuum environment to seal the absorber structure within the cavity.

2. 发明申请

WO2014100648A1 THIN-FILM ENCAPSULATED INFRARED SENSOR 审中-公开
标题翻译：薄膜封装的红外传感器
公开(公告)号：WO2014100648A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/077052
申请日：2013-12-20
申请人： ROBERT BOSCH GmbH , PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
发明人： PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
IPC分类号： G01J5/04 , G01J5/20
CPC分类号： H01L31/0203 , G01J5/045 , G01J5/20 , H01L31/09 , H01L31/18
摘要： A method of fabricating a bolometer infrared sensor includes depositing a first sacrificial layer on a surface of a substrate over a sensor region, and forming an absorber structure for the infrared sensor on top of the first sacrificial layer. A second sacrificial layer is deposited on top of the absorber structure. An encapsulating thin film is then deposited on top of the second sacrificial layer. Vent holes are formed in the encapsulating thin film. The first and the second sacrificial layers are removed below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located via the vent holes. The vent holes are then closed in a vacuum environment to seal the absorber structure within the cavity.
摘要翻译：一种制造测辐射热计红外传感器的方法包括在传感器区域上的衬底表面上沉积第一牺牲层，以及在第一牺牲层的顶部上形成用于红外传感器的吸收体结构。第二牺牲层沉积在吸收体结构的顶部。然后将封装的薄膜沉积在第二牺牲层的顶部上。在封装薄膜中形成排气孔。在封装薄膜下方移除第一和第二牺牲层以释放吸收体结构，并在感测区域上方形成一个空腔，该腔体通过通气孔向下延伸到吸收体结构位于其中的衬底。然后在真空环境中关闭通气孔以密封空腔内的吸收体结构。

3. 发明申请

WO2014159946A1 MEMS DEVICE HAVING A GETTER 审中-公开
标题翻译：具有GETTER的MEMS器件
公开(公告)号：WO2014159946A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/025498
申请日：2014-03-13
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , GRAHAM, Andrew , KIM, Bongsang , PURKL, Fabian
发明人： SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , GRAHAM, Andrew , KIM, Bongsang , PURKL, Fabian
IPC分类号： H01L23/12 , H01L21/322 , B81B7/02
CPC分类号： B81C1/00285 , B81C2201/0115 , B81C2203/0109 , B81C2203/0118 , B81C2203/035 , H01L21/3223 , H01L21/3225 , H01L23/28
摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.
摘要翻译：微机电系统（MEMS）装置包括高密度吸气剂。高密度吸气剂包括通过孔化形成的硅表面积或通过在该装置的密封腔内形成沟槽。硅表面积包括钛或其它吸气材料的沉积物，以减少密封室中存在的气体的量，从而形成低压室。高密度吸气剂用于测辐射仪和陀螺仪，但不限于这些设备。

4. 发明公开

EP2938979A1 MEMS INFRARED SENSOR INCLUDING A PLASMONIC LENS 有权转让
标题翻译： WITH A电浆LENS MEMS红外
公开(公告)号：EP2938979A1
公开(公告)日：2015-11-04
申请号：EP13821755.9
申请日：2013-12-20
申请人： Robert Bosch GmbH , Samarao, Ashwin , O'Brien, Gary , Feyh, Ando , Yama, Gary , Purkl, Fabian
发明人： SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , PURKL, Fabian
IPC分类号： G01J5/08 , G01J5/02 , G01J5/20 , G01J5/00
CPC分类号： G01J5/0815 , G01J5/025 , G01J5/0806 , G01J5/20 , G01J2005/0077
摘要： A portable thermal imaging system includes a portable housing configured to be carried by a user, a bolometer sensor assembly supported by the housing and including an array of thermal sensor elements and at least one plasmonic lens, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, assign each of the obtained signals with a respective color data associated with a temperature of a sensed object, and render the color data.

5. 发明申请

WO2014100611A1 METHOD OF MANUFACTURING A SENSOR DEVICE HAVING A POROUS THIN-FILM METAL ELECTRODE 审中-公开
标题翻译：制造具有多孔薄膜金属电极的传感器器件的方法
公开(公告)号：WO2014100611A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/076976
申请日：2013-12-20
申请人： ROBERT BOSCH GMBH , FEYH, Ando , O'BRIEN, Gary , PURKL, Fabian , YAMA, Gary , SAMARAO, Ashwin
发明人： FEYH, Ando , O'BRIEN, Gary , PURKL, Fabian , YAMA, Gary , SAMARAO, Ashwin
IPC分类号： G01N27/414
CPC分类号： H01L21/28008 , G01N27/4146 , H01L29/4238
摘要： A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD).
摘要翻译：一种半导体传感器装置的制造方法，其特征在于，包括：在所述基板上设置支撑源极区域和漏极区域的基板，在所述源极区域和所述漏极区域的上方形成绝缘体层，在所述绝缘体层的上方形成多孔金属栅极区域，使用等离子体增强原子层沉积（PEALD）。

6. 发明申请

WO2014189600A2 ANISOTROPIC CONDUCTOR AND METHOD OF FABRICATION THEREOF 审中-公开
标题翻译：各向异性导体及其制造方法
公开(公告)号：WO2014189600A2
公开(公告)日：2014-11-27
申请号：PCT/US2014/022175
申请日：2014-03-08
申请人： ROBERT BOSCH GMBH , FEYH, Ando , PURKL, Fabian , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
发明人： FEYH, Ando , PURKL, Fabian , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
IPC分类号： C23C28/00 , C23C16/455
CPC分类号： B81C1/00095 , B81B7/0006 , B82Y10/00 , B82Y30/00 , H01L21/02601 , H01L21/3142 , H01L45/146
摘要： An anisotropic conductor and a method of fabrication thereof. The anisotropic conductor includes an insulating matrix and a plurality of nanoparticles disposed therein. A first portion of the plurality of nanoparticles provides a conductor when subjected to a voltage and/or current pulse. A second portion of the plurality of the nanoparticles does not form a conductor when the voltage and or current pulse is applied to the first portion. The anisotropic conductor forms a conductive path between conductors of electronic devices, components, and systems, including microelectromechanical systems (MEMS) devices, components, and systems.
摘要翻译：各向异性导体及其制造方法。各向异性导体包括绝缘基体和设置在其中的多个纳米颗粒。多个纳米颗粒的第一部分在经受电压和/或电流脉冲时提供导体。当电压和/或电流脉冲施加到第一部分时，多个纳米颗粒的第二部分不形成导体。各向异性导体在电子器件，部件和系统的导体之间形成导电路径，包括微机电系统（MEMS）器件，部件和系统。

7. 发明公开

EP2984474A1 RESISTIVE MEMS HUMIDITY SENSOR 有权转让
标题翻译：电阻式微机电传感器
公开(公告)号：EP2984474A1
公开(公告)日：2016-02-17
申请号：EP13821548.8
申请日：2013-12-17
申请人： Robert Bosch GmbH , Feyh, Ando , Graham, Andrew , Samarao, Ashwin , Yama, Gary , O'Brien, Gary
发明人： FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
IPC分类号： G01N27/12
CPC分类号： G01N27/121
摘要： A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.
摘要翻译：半导体器件包括衬底，设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。感测膜限定绝缘膜上的第一位置和第二位置之间的至少一个导电路径。第一电路连接在绝缘层上的第一位置电连接到感测膜，并且第二电路连接在第二位置电连接到感测膜。控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。

8. 发明申请

WO2016057880A1 METHOD TO MODULATE THE SENSITIVITY OF A BOLOMETER VIA NEGATIVE INTERFERENCE 审中-公开
标题翻译：通过负面干扰来调节玻璃体的灵敏度的方法
公开(公告)号：WO2016057880A1
公开(公告)日：2016-04-14
申请号：PCT/US2015/054855
申请日：2015-10-09
申请人： ROBERT BOSCH GMBH , ROCZNIK, Thomas , PURKL, Fabian , O'BRIEN, Gary , FEYH, Ando , KIM, Bongsang , SAMARAO, Ashwin , YAMA, Gary
发明人： ROCZNIK, Thomas , PURKL, Fabian , O'BRIEN, Gary , FEYH, Ando , KIM, Bongsang , SAMARAO, Ashwin , YAMA, Gary
IPC分类号： G01J5/10 , G01J5/22 , G01J5/00
CPC分类号： G01J5/06 , G01J5/0809 , G01J5/0853 , G01J5/20 , G01J5/24 , G01J2005/066 , G01J2005/067
摘要： A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.
摘要翻译：半导体传感器系统，特别是测辐射热计，包括基板，由基板支撑的电极，与基板间隔开的吸收体，电压源和电流源。电极可以包括反射镜，或者系统可以包括与电极分离的反射镜。吸收器的辐射吸收效率基于吸收器和反射镜之间的最小间隙距离。电流源通过吸收器结构施加直流电流以产生指示由吸收体结构吸收的辐射的信号。电压源为电极供电以产生作用在吸收器上的调制静电场，以调制最小间隙距离。静电场包括用于调节吸收效率的DC分量，以及周期性地驱动吸收体负相干扰信号中的噪声的AC分量。

9. 发明申请

WO2014100706A1 MEMS INFRARED SENSOR INCLUDING A PLASMONIC LENS 审中-公开
标题翻译： MEMS红外传感器，包括一个等离子体镜头
公开(公告)号：WO2014100706A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/077187
申请日：2013-12-20
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , PURKL, Fabian
发明人： SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , PURKL, Fabian
IPC分类号： G01J5/08 , G01J5/02 , G01J5/20 , G01J5/00
CPC分类号： G01J5/0815 , G01J5/025 , G01J5/0806 , G01J5/20 , G01J2005/0077
摘要： A portable thermal imaging system includes a portable housing configured to be carried by a user, a bolometer sensor assembly supported by the housing and including an array of thermal sensor elements and at least one plasmonic lens, a memory including program instructions, and a processor operably connected to the memory and to the sensor, and configured to execute the program instructions to obtain signals from each of a selected set of thermal sensor elements of the array of thermal sensor elements, assign each of the obtained signals with a respective color data associated with a temperature of a sensed object, and render the color data.
摘要翻译：便携式热成像系统包括被配置为由用户携带的便携式外壳，由壳体支撑的测辐射热计传感器组件，并且包括热传感器元件阵列和至少一个等离子体激元透镜，包括程序指令的存储器和可操作地处理的处理器连接到存储器和传感器，并且被配置为执行程序指令以从热传感器元件阵列的所选择的一组热传感器元件中的每一个获得信号，将获得的每个信号分配给与感测对象的温度，并呈现彩色数据。

10. 发明申请

WO2014031614A1 CMOS BOLOMETER 审中-公开
公开(公告)号：WO2014031614A1
公开(公告)日：2014-02-27
申请号：PCT/US2013/055752
申请日：2013-08-20
申请人： ROBERT BOSCH GMBH , YAMA, Gary , FEYH, Ando , SAMARAO, Ashwin , PURKL, Fabian , O'BRIEN, Gary
发明人： YAMA, Gary , FEYH, Ando , SAMARAO, Ashwin , PURKL, Fabian , O'BRIEN, Gary
IPC分类号： G01J5/02 , G01J5/20 , H01L27/144
CPC分类号： H01L31/02019 , G01J5/023 , G01J5/0235 , G01J5/024 , G01J5/20 , G01J2005/204 , H01L27/1446
摘要： A method of manufacturing a semiconductor device includes forming at least one sacrificial layer (106, 108, 110) on a substrate (100) during a complementary metal-oxide-semiconductor (CMOS) process. An absorber layer (130) is deposited on top of the at least one sacrificial layer. A portion of the at least one sacrificial layer (106, 108, 110) beneath the absorber layer is removed to form a gap (G1) over which a portion of the absorber layer is suspended. The sacrificial layer can be an oxide of the CMOS process with the oxide being removed to form the gap using a selective hydrofluoric acid vapor dry etch release process. The sacrificial layer can also be a polymer layer with the polymer layer being removed to form the gap using an O 2 plasma etching process.
摘要翻译：制造半导体器件的方法包括在互补金属氧化物半导体（CMOS）工艺期间在衬底（100）上形成至少一个牺牲层（106,108,110）。在所述至少一个牺牲层的顶部上沉积吸收层（130）。吸收层下方的至少一个牺牲层（106,108,110）的一部分被去除以形成间隙（G1），吸收层的一部分悬挂在该间隙上。牺牲层可以是CMOS工艺的氧化物，其中使用选择性氢氟酸蒸气干蚀刻释放工艺除去氧化物以形成间隙。牺牲层也可以是聚合物层，其中除去聚合物层以使用O 2等离子体蚀刻工艺形成间隙。

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