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1. 发明专利

JP2002324913A III NITRIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
公开(公告)号：JP2002324913A
公开(公告)日：2002-11-08
申请号：JP2001127209
申请日：2001-04-25
申请人： RICOH KK
发明人： IWATA HIROKAZU , SARAYAMA SHOJI , MIKI TAKESHI
IPC分类号： H01L21/205 , H01L33/04 , H01L33/12 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a III nitride semiconductor which has higher carrier concentration and higher quality than the conventional one. SOLUTION: On a sapphire substrate 10, a low-temperature GaN buffer layer 11 and a p-type Alx Ga(1-x) N (0 cm .

2. 发明专利

JP2001119103A METHOD AND DEVICE FOR GROWING CRYSTAL, CUBIC III NITRIDE CRYSTAL, AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001119103A
公开(公告)日：2001-04-27
申请号：JP29503999
申请日：1999-10-18
申请人： RICOH KK
发明人： SARAYAMA SHOJI , SHIMADA MASAHIKO , YAMANE HISANORI
IPC分类号： C30B29/38 , H01L33/06 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a method and device for growing crystals by which the yield can be improved and cost can be reduced significantly, at cutting of a substrate into chips, a cubic III nitride crystal, and a semiconductor device. SOLUTION: In a reaction chamber 101, a cubic III nitride crystal composed of a group III metallic element (for example, gallium(Ga)) and nitride elements is grown from a material 102, containing an alkali metal and at least the group III metallic element and another material 103, containing at least nitrogen element.

3. 发明专利

JP2001064098A METHOD AND DEVICE FOR GROWING CRYSTAL, AND GROUP III NITRIDE CRYSTAL 失效
公开(公告)号：JP2001064098A
公开(公告)日：2001-03-13
申请号：JP23719599
申请日：1999-08-24
申请人： RICOH KK
发明人： SARAYAMA SHOJI , IWATA HIROKAZU
IPC分类号： H01L21/208 , C30B9/00 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To produce a group III nitride crystal having a sufficiently large crystal size without complicating the process or using an expensive reactor and further without making the crystal size small. SOLUTION: The crystal growing device has a reactor 101 in which a group III nitride crystal is grown from a molten liquid 102 containing at least a group III metal, a flux and a nitrogen raw material. Further, the crystal growing device is equipped with a seed crystal holding means 104 for holding a seed crystal 103 of the group III nitride, flux supplying means 106, 108, 110 for supplying the flux while controlling the vapor pressure of the flux, and nitrogen supplying means 111, 112 for supplying the nitrogen raw material while controlling the pressure of the gaseous nitrogen. The area where the seed crystal 103, the molten liquid 102 and the nitrogen raw material are brought into contact with one another can be moved by moving the seed crystal holding means 104.

4. 发明专利

JP2001064097A METHOD AND DEVICE FOR GROWING CRYSTAL, AND GROUP III NITRIDE CRYSTAL 失效
公开(公告)号：JP2001064097A
公开(公告)日：2001-03-13
申请号：JP23720099
申请日：1999-08-24
申请人： RICOH KK
发明人： SARAYAMA SHOJI
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To produce a group III nitride crystal, without using an expensive reactor and without making the crystal size small and whose crystal size is sufficiently large to be practically used in the production of a device such as a high performance light emitting diode or a LD. SOLUTION: The nitrogen pressure (pressure of a nitrogen raw material) in a first cylinder 110, which is provided in a first gas supplying apparatus 120 and in which gaseous nitrogen is filled, is controlled to be not less than the pressure (pressure of the nitrogen raw material) in a reactor 101, thereby making it possible to set the pressure of the nitrogen raw material in the reactor 101 to a desired value through pressure control mechanisms 107, 108 for gaseous nitrogen. Thus, when the pressure of the gaseous nitrogen being the nitrogen raw material is controlled under such a state that sufficient amounts of a group III metal and a flux (e.g. Na) are present, it becomes possible to continuously grow the group III nitride crystal (GaN crystal) and to grow the group III nitride crystal (GaN crystal) having a desired crystal size.

5. 发明专利

JP2000012469A SYSTEM AND METHOD FOR CRYSTAL GROWTH 失效
公开(公告)号：JP2000012469A
公开(公告)日：2000-01-14
申请号：JP18696398
申请日：1998-06-17
申请人： RICOH KK
发明人： SARAYAMA SHOJI
IPC分类号： C30B25/14 , C30B29/40 , H01L21/205 , H01L33/32 , H01S5/00 , H01S5/30 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a system and a method for crystal growth of good quality GaN semiconductor crystalline film with low-cost and moreover with simple constitution and a small number of nitrogen holes. SOLUTION: A crystal growth system 20 has a substrate 27 between a support 28a of a susceptor holder 28 and a susceptor 25. While power is supplied to a coil 33 for induction heating to generate eddy current in the susceptor 25 and the substrate 27 is heated to a predetermined high temperature, a material gas is supplied from a gas supply tube 29, that is attached to a flange 22 at the bottom side of a reaction chamber 21 and has an ejection port located under the exact center of the substrate 27. A compound film 32 containing nitrogen is attached to the peripheral surface of the susceptor holder 28, the outer surface of the support 28a, and the end portion of a gas feeding tube 31 conically opened under the substrate 27. This compound film 32 is also heated to a temperature higher than the decomposition temperature. The compound film 32 containing nitrogen is decomposed, and the partial pressure of nitrogen near the substrate 27 is increased. Therefore, good quality GaN semiconductor crystalline film can be deposited on the surface of the substrate 27, even though the portion of nitrogen material in the material gas is small.

6. 发明专利

JP2003212696A METHOD AND APPARATUS FOR GROWING CRYSTAL OF GROUP III NITRIDE 审中-公开
公开(公告)号：JP2003212696A
公开(公告)日：2003-07-30
申请号：JP2002009651
申请日：2002-01-18
申请人： RICOH KK
发明人： IWATA HIROKAZU , SARAYAMA SHOJI , SHIMADA MASAHIKO , YAMANE HISANORI , ARAKI TAKASHI
IPC分类号： C30B29/38 , C30B7/06
摘要： PROBLEM TO BE SOLVED: To stably grow a crystal of a group III nitride. SOLUTION: When the crystal of the group III nitride 25 constituted of a group III metal and nitrogen is grown from a mixed melt 24, formed from an alkali metal and a group III metal, and a substance containing at least nitrogen in a reaction vessel 12, a part brought into contact with the mixed melt 24 of the reaction vessel 12 is constituted of a dense material. COPYRIGHT: (C)2003,JPO

7. 发明专利

JP2002128587A METHOD AND APPARATUS FOR CRYSTAL GROWTH, GROUP III NITRIDE CRYSTAL, AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2002128587A
公开(公告)日：2002-05-09
申请号：JP2000318988
申请日：2000-10-19
申请人： RICOH KK
发明人： SARAYAMA SHOJI , SHIMADA MASAHIKO , YAMANE HISANORI , AOKI MASATAKA
IPC分类号： C30B9/12 , C30B29/38 , H01L33/06 , H01L33/32 , H01L33/40 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal whose size is usable for manufacturing a device such as a high-performance light emitting diode, a high- performance laser diode(LD), etc., without complicating its producing method, without using an expensive reaction vessel, and without allowing the crystal size to become smaller, and to provide the method and apparatus for crystal where such a group III nitride crystal can be grown. SOLUTION: A group III nitride composed of a group III metal and nitrogen is grown to crystal from a mixture melt, in which an alkaline metal and a substance containing at least a group III are mixed, and from a substance containing at least nitrogen. A mixture melt-holding container 102 for holding a mixture melt 103 is installed inside a reaction vessel. The inner shape 102a of the container 102 is so formed that a local density distribution of dissolved nitrogen is generated in the mixture melt 103.

8. 发明专利

JP2002128586A METHOD AND APPARATUS FOR CRYSTAL GROWTH, GROUP III NITRIDE CRYSTAL, AND SEMICONDUCTOR DEVICE OF GROUP III NITRIDE 失效
公开(公告)号：JP2002128586A
公开(公告)日：2002-05-09
申请号：JP2000318723
申请日：2000-10-19
申请人： RICOH KK
发明人： SARAYAMA SHOJI , SHIMADA MASAHIKO , YAMANE HISANORI
IPC分类号： C30B9/12 , C30B29/38 , H01L33/06 , H01L33/14 , H01L33/32 , H01L33/40 , H01S5/323 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal whose size is usable for manufacturing a device such as a high-performance light emitting diode, a high- performance laser diode(LD), etc., without complicating its producing method, without using an expensive reaction vessel, and without allowing the crystal size to become smaller, and to provide a method and apparatus for crystal growth where such a group III nitride crystal can be grown. SOLUTION: The crystal of the group III nitride is grown in the first reaction vessel 101 by using a mixture melt 102 containing alkaline metal and at least a group III metal, and a nitrogen raw material introduced from the outside of the reaction vessel 101. At this time, alkaline metal vapor is enclosed in the reaction vessel 101.

9. 发明专利

JP2001217455A SEMICONDUCTOR SUBSTRATE, METHOD OF FORMING THE SAME AND LIGHT EMITTING DEVICE 失效
公开(公告)号：JP2001217455A
公开(公告)日：2001-08-10
申请号：JP2000032749
申请日：2000-02-04
申请人： RICOH KK
发明人： MIKI TAKESHI , SARAYAMA SHOJI
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor substrate of III nitride which is almost free from crystal defects, high in quality, and large in area, its manufacturing method, and a light emitting device. SOLUTION: A semiconductor substrate is manufactured in such manner in which a region 106 where an epitaxial layer of III nitride (e.g. GaN) is selectively grown and a region in which an epitaxial layer of III nitride is not selectively grown are mixedly provided on an epitaxal growth substrate, and an epitaxial layer 107 of III nitride is formed on the substrate for the formation of a semiconductor substrate. At this point, the semiconductor substrate is manufactured in such a manner in which the III nitride epitaxial layer 107 grown in the region 106 of the epitaxial growth substrate where a III nitride epitaxial layer is selectively grown and the epitaxial growth board are separated from each other.

10. 发明专利

JPH11340222A SEMICONDUCTOR DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH11340222A
公开(公告)日：1999-12-10
申请号：JP14267298
申请日：1998-05-25
申请人： RICOH KK
发明人： SARAYAMA SHOJI , YAMAGUCHI KIYOSHI
IPC分类号： H01L21/316 , H01L33/08 , H01L33/44 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To disassemble a semiconductor device without causing cracks nor film peeling in semiconductor elements by performing plasma treatment on a substrate in a vacuum vessel maintained in an atmosphere composed mainly of a reducing gas before a film in contact with the surface of the substrate is formed. SOLUTION: In a method for manufacturing semiconductor device, after edge-emission type light-emitting diode arrays 2-6 are formed on a substrate 1 as semiconductor elements, the substrate 1 carrying the semiconductor elements 2-6 is divided into a plurality of chip-shaped semiconductor devices. In this method, plasma treatment is performed on the substrate 1 in a vacuum vessel maintained in an atmosphere composed mainly of a reducing gas before the forming process of an insulating film 8 which is formed as the outermost film of the films which are in contact with the surface of the substrate 1. Therefore, good wafer cutting can be made without causing the cracking and peeling of the insulating film 8. In addition, the number of chips obtained from the same area can be increased, because the interval between each chip can be reduced.

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