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    • 1. 发明申请
    • SYSTEMS, METHODS, AND DEVICES FOR HANDLING TERAHERTZ RADIATION
    • 用于处理TERAHERTZ辐射的系统,方法和装置
    • WO2008147575A2
    • 2008-12-04
    • PCT/US2008/050926
    • 2008-01-11
    • RENSSELAER POLYTECHNIC INSTITUTESCHULKIN, BrianZHANG, Xi-ChengTONGUE, ThomasXU, JingzhouCHEN, Jian
    • SCHULKIN, BrianZHANG, Xi-ChengTONGUE, ThomasXU, JingzhouCHEN, Jian
    • G01J4/00
    • G21K5/00B33Y80/00G01J4/00G01N21/211G01N21/3581H01S5/02236H01S2302/02
    • Methods and apparatus (10, 20, 25, 60, 70) for detecting variations in electromagnetic fields, in particular, terahertz (THz) electromagnetic fields, are provided. The methods and apparatus employ polarization detection devices (120) and controllers (224) to maintain or vary the polarization of modulated signals (212, 262) as desired. The methods and apparatus are provided to characterize electromagnetic fields by directing the electromagnetic field (204, 254) and a probe beam (206, 252) upon an electro-crystal (202, 256) and detecting the modulation of the resulting probe beam (212, 262). Detection of the modulation of the probe beam (212, 262) is practiced by detecting and comparing the polarization components (216, 218, 266, 268) of the modulated probe beam (212, 262). Aspects of the invention may be used to analyze or detect explosives, explosive related compounds, and pharmaceuticals, among other substances. A compact apparatus (10), modular optical devices (20, 25, 60, 70) for use with the apparatus, sample holders (400, 402, 500), and radiation source mounts (600, 650, 700) are also disclosed.
    • 提供了用于检测电磁场特别是太赫兹(THz)电磁场的变化的方法和装置(10,20,25,60,70)。 所述方法和装置使用偏振检测装置(120)和控制器(224)来根据需要维持或改变调制信号(212,262)的极化。 提供的方法和装置通过将电磁场(204,254)和探针光束(206,252)引导到电晶体(202,256)上并检测所得到的探针光束(212)的调制来表征电磁场 ,262)。 通过检测和比较调制探测光束(212,262)的偏振分量(216,218,266,268)来实现探测光束(212,262)的调制的检测。 本发明的方面可用于分析或检测爆炸物,爆炸性相关化合物和药物等物质。 还公开了一种紧凑装置(10),用于与装置一起使用的模块化光学装置(20,25,60,70),样品保持器(400,402,500)和辐射源安装件(600,650,700)。
    • 2. 发明申请
    • GaSa CRYSTALS FOR BROADBAND TERAHERTZ WAVE DETECTION
    • GaSa晶体用于宽带TERAHERTZ波检测
    • WO2006101756A1
    • 2006-09-28
    • PCT/US2006/008370
    • 2006-03-08
    • RENSSELAER POLYTECHNIC INSTITUTELIU, KaiZHANG, Xi-ChengXU, Jingzhou
    • LIU, KaiZHANG, Xi-ChengXU, Jingzhou
    • G01J3/42
    • G01J3/42G01N21/21G01N21/3581
    • A broad bandwidth detector to measure intensity information of terahertz (THz) frequency pulses. The detector includes: coupling optics coupled to a coherent optical source; a GaSe substrate aligned such that the probe beam path intersects a first surface at a phase-matching angle; a polarization detector aligned in the probe beam path; and calculation means coupled to the polarization detector. The coupling optics direct the probe optical beam along a beam path that is substantially collinear with the pulse beam path of the THz frequency pulses. The polarization of the probe optical beam is varied based on interactions between the probe optical beam and the THz frequency pulses within the GaSe substrate. The polarization detector detects the varied polarization of the probe optical beam. The calculation means determine the intensity information of the THz frequency pulses based on the detected probe polarization of the probe optical beam.
    • 用于测量太赫兹(THz)频率脉冲的强度信息的宽带宽检测器。 检测器包括:耦合到相干光源的耦合光学器件; GaSe衬底对准,使得探针光束路径以相位匹配角度与第一表面相交; 在探测光束路径中对准的偏振检测器; 以及耦合到偏振检测器的计算装置。 耦合光学器件沿着与THz频率脉冲的脉冲光束路径基本共线的光束路径来引导探测光束。 基于探针光束和GaSe衬底内的THz频率脉冲之间的相互作用,探针光束的极化是变化的。 偏振检测器检测探针光束的变化的极化。 计算装置根据检测的探针光束的探针偏振来确定THz频率脉冲的强度信息。
    • 3. 发明申请
    • HIGH REPETITION RATE, LINEAR, TRUE TIME OPTICAL DELAY LINE
    • 高重复率,线性,真实时光延迟线
    • WO2005088371A1
    • 2005-09-22
    • PCT/US2005/007500
    • 2005-03-08
    • RENSSELAER POLYTECHNIC INSTITUTEXU, JingzhouZHANG, Xi-Cheng
    • XU, JingzhouZHANG, Xi-Cheng
    • G02B6/10
    • G02B5/10G02B6/2861G02B6/424G02B6/4244
    • An optical delay line (200) for use with an optical source including input/output optics optically coupled to the optical source and a curved mirror (216) with a reflective surface that is centered about an evolute curve (212) of the delay line (200) to retro-reflect light traveling along a delay line beam path tangent to the edge of the evolute curve. The input/output optics direct light from the optical source along the delay line beam path (214) and direct delayed light from the delay line beam path (214) out of the optical delay line along an output beam path. The input/output optics (204) and/or the curved mirror (216) rotate about the evolute curve (212) at a selected angular speed. The reflective surface has a curvature based on a parametric curve that is calculated from the evolute curve such that the delay of the delay line (200) varies according to a predetermined function as the input/output optics and/or the curved mirror rotate.
    • 一种用于光源的光学延迟线(200),包括光学耦合到光源的输入/输出光学器件,以及具有以延迟线的演化曲线(212)为中心的反射表面的曲面镜(216) 200)以反射沿着与演化曲线的边缘相切的延迟线光束路径行进的光。 输入/输出光学器件沿着延迟线光束路径(214)将来自光源的光引导,并且沿着输出光束路径将来自延迟线光束路径(214)的直接延迟光从光学延迟线引出。 输入/输出光学器件(204)和/或曲面镜(216)以选定的角速度绕渐进曲线(212)旋转。 反射表面具有基于从演化曲线计算的参数曲线的曲率,使得当输入/输出光学器件和/或曲面镜旋转时,延迟线(200)的延迟根据预定功能而变化。
    • 4. 发明申请
    • TERA-HERTZ RAY MICROSCOPE
    • WO2003095991A1
    • 2003-11-20
    • PCT/US2003/014702
    • 2003-05-09
    • RENSSELAER POLYTECHNIC INSTITUTE
    • ZHANG, Xi-ChengXU, JingzhouYUAN, Tao
    • G01N21/35
    • G01N21/3581G01N21/3563G02B21/00
    • A microscope for producing an image of a target using THz radiation. The microscope comprises a source for providing an optical pump pulse and an optical probe pulse; a THz emitter for activation by pump pulse to emit a THz pulse that irradiates the target to form a target-modified THz pulse; a THz detector for modulating the probe pulse with the target-modified THz pulse to create a modulated optical probe pulse characteristic of the target; an optical detection system for modifying and detecting the modulated optical probe pulse and converting the modulated optical probe pulse to electronic information; and a processor for receiving the electronic information and producing an image of the sample using the electronic information. The THz emitter and detector comprise one or more EO crystals. The target is positioned on one of the EO crystals in a near-field of the THz pulse.
    • 用于使用太赫兹辐射产生目标图像的显微镜。 显微镜包括用于提供光泵浦脉冲和光探针脉冲的源; 用于通过泵浦脉冲激活的THz发射器发射照射目标以形成目标修正的THz脉冲的THz脉冲; THz检测器,用于用目标修正的THz脉冲调制探针脉冲,以产生目标的调制光探针脉冲特性; 光学检测系统,用于修改和检测调制的光探针脉冲并将调制的光探针脉冲转换成电子信息; 以及处理器,用于接收电子信息并使用电子信息产生样本的图像。 太赫兹发射器和检测器包括一个或多个EO晶体。 目标位于太赫兹脉冲的近场中的一个EO晶体上。
    • 7. 发明申请
    • LASER-BASED MATERIAL PROCESSING APPARATUS AND METHODS
    • 基于激光的材料加工设备和方法
    • WO2011123205A1
    • 2011-10-06
    • PCT/US2011/026501
    • 2011-02-28
    • IMRA AMERICA, INC.XU, JingzhouSOHN, Jin, YoungCHO, Gyu, CheonSHAH, Lawrence
    • XU, JingzhouSOHN, Jin, YoungCHO, Gyu, CheonSHAH, Lawrence
    • B23K26/00
    • B23K26/00Y02P40/57
    • Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse width sufficiently short so that material is efficiently removed by nonlinear optical absorption from the region and a quantity of heat affected zone and thermal stress on the material within the region, proximate to the region, or both is reduced relative to a quantity obtainable using a laser with longer pulses. In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a composite material.
    • 各种实施例可以用于对工件的目标材料进行基于激光的修改,同时有利地实现处理生产量和/或质量的改善。 处理方法的实施例可以包括将激光脉冲聚焦并且以足够短的脉冲宽度将激光脉冲引导到工件的区域,使得通过来自该区域的非线性光学吸收和一定数量的热影响区和热应力有效地去除材料 区域内的材料,邻近区域或两者都相对于使用具有较长脉冲的激光可获得的量减少。 在至少一个实施例中,超短脉冲激光系统可以包括光纤放大器或光纤激光器中的至少一个。 各种实施例适合于在复合材料上或复合材料内的切割,切割,划线和成形特征中的至少一个。
    • 9. 发明申请
    • LASER-BASED MATERIAL PROCESSING METHODS AND SYSTEMS
    • 基于激光的材料加工方法与系统
    • WO2009117451A1
    • 2009-09-24
    • PCT/US2009/037443
    • 2009-03-17
    • IMRA AMERICA, INC.SHAH, LawrenceCHO, Gyu, CheonXU, Jingzhou
    • SHAH, LawrenceCHO, Gyu, CheonXU, Jingzhou
    • B23K26/06B23K26/38
    • H01L21/268B23K26/0624B23K26/064B23K26/0643B23K26/0648B23K26/082B23K26/083B23K26/364B23K26/38B23K26/40B23K2201/40B23K2203/50
    • Various embodiments may be used for laser-based modification of target material of a workpiece while advantageously achieving improvements in processing throughput and/or quality. Embodiments of a method of processing may include focusing and directing laser pulses to a region of the workpiece at a pulse repetition rate sufficiently high so that material is efficiently removed from the region and a quantity of unwanted material within the region, proximate to the region, or both is reduced relative to a quantity obtainable at a lower repetition rate In at least one embodiment, an ultrashort pulse laser system may include at least one of a fiber amplifier or fiber laser. Various embodiments are suitable for at least one of dicing, cutting, scribing, and forming features on or within a semiconductor substrate. Workpiece materials may also include metals, inorganic or organic dielectrics, or any material to be micromachined with femtosecond and/or picosecond pulses, and in some embodiments with pulse widths up to a few nanoseconds.
    • 各种实施例可以用于对工件的目标材料进行基于激光的修改,同时有利地实现处理生产量和/或质量的改善。 处理方法的实施例可以包括将激光脉冲聚焦并以足够高的脉冲重复频率将激光脉冲引导到工件的区域,使得材料有效地从该区域移除并且在该区域内靠近该区域的一些不想要的材料, 或者两者相对于以较低重复率可获得的量而减小。在至少一个实施例中,超短脉冲激光系统可以包括光纤放大器或光纤激光器中的至少一个。 各种实施例适合于在半导体衬底上或半导体衬底内的切割,切割,划线和形成特征中的至少一个。 工件材料还可以包括金属,无机或有机电介质,或用飞秒和/或皮秒脉冲微加工的任何材料,在一些实施例中,脉冲宽度可达几纳秒。