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1. 发明申请

WO2017199132A1 SILICON INGOT GROWTH CRUCIBLE WITH PATTERNED PROTRUSION STRUCTURED LAYER 审中-公开
标题翻译：硅锭生长坩埚与图案凸出结构层
公开(公告)号：WO2017199132A1
公开(公告)日：2017-11-23
申请号：PCT/IB2017/052720
申请日：2017-05-10
申请人： REC SOLAR PTE. LTD.
发明人： KUMARAN, Abbu Udaiyar Senthil , YUHAO, Mike Wu , TANG, Qi , LE FLAO, Benoit Jean Jacques , KAR, Ng Hock , SONG, Adolphus
IPC分类号： C30B11/00 , C30B35/00 , C30B29/06
CPC分类号： C30B35/002 , C30B11/002 , C30B29/06
摘要： A crucible (1) for growing silicon ingots is proposed. The crucible comprises a vessel (3) having a bottom wall (5) and side walls (7) surrounding an inner portion (9) of the vessel. A coating layer (11) is applied to inner surfaces of the bottom wall and the side walls, the coating layer comprising a temperature-resistant material compatible with ingot growth from molten silicon such as silicon nitride. Furthermore, a patterned protrusion layer (13) is applied at the inner surface of the bottom wall. The patterned protrusion layer comprises a matrix (15) consisting of a temperature-resistant material compatible with ingot growth from molten silicon such as silicon nitride. Furthermore, the patterned protrusion layer further comprises particles (17) of a nucleation enhancing material such as silica, the particles locally protruding from the matrix. Accordingly, the protruding particles (17) may generate a pattern of multiple nucleation points during crystal growth of the ingot. Due to such multiple nucleation points, a dislocation density defect propagation towards a top may be reduced during crystal growth such that e.g. solar cells produced with wafers sliced from the resulting ingot may have an improved conversion efficiency.
摘要翻译：提出了用于生长硅锭的坩埚（1）。坩埚包括具有底壁（5）和围绕容器的内部部分（9）的侧壁（7）的容器（3）。涂层（11）被施加到底壁和侧壁的内表面，该涂层包括与熔融硅（例如氮化硅）的锭生长相容的耐高温材料。此外，图案化的突起层（13）被施加在底壁的内表面。图案化的突起层包括由耐熔材料构成的基体（15），该耐热材料与熔融硅（例如氮化硅）的硅锭生长相适应。此外，图案化突起层还包括成核增强材料例如二氧化硅的颗粒（17），颗粒从基体局部突出。因此，突起粒子（17）可以在晶棒的晶体生长期间产生多个成核点的图案。由于这种多个成核点，在晶体生长过程中朝向顶部的位错密度缺陷传播可能会减少，例如，使用从所得锭块切片的晶片生产的太阳能电池可具有改善的转换效率。

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