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1. 发明授权

US2957937A Thermoelectric materials 失效
公开(公告)号：US2957937A
公开(公告)日：1960-10-25
申请号：US74226558
申请日：1958-06-16
申请人： RCA CORP
发明人： JENSEN ROBERT V , ROSI FRED D
IPC分类号： H01L35/16
CPC分类号： H01L35/16

2. 发明授权

US2898249A Method of preparing semi-conductor alloys 失效
标题翻译：制备半导体合金的方法
公开(公告)号：US2898249A
公开(公告)日：1959-08-04
申请号：US71243158
申请日：1958-01-31
申请人： RCA CORP
发明人： JENSEN ROBERT V
IPC分类号： C30B9/00 , C30B9/06 , C30B11/00 , C30B11/06 , C30B13/08 , C30B15/00 , F16F9/04 , H01L21/00
CPC分类号： F16F9/0454 , C30B9/00 , C30B9/06 , C30B11/00 , C30B11/06 , C30B13/08 , C30B15/00 , C30B29/52 , H01L21/00
摘要： A method of making a monocrystalline alloy ingot comprises melting at least a portion of a mass of semi-conductor material to provide a major constituent of the alloy, and continuously and progressively growing a monocrystalline ingot from the melt while adding thereto a minor constituent of the alloy other than or in addition to a conductivity determining impurity, the minor constituent being added in an amount which increases its content in the melt gradually and progressively or by small increments, whereby an ingot is grown having a minor constituent content which increases along at least a portion of the length of the ingot until an ingot portion having not less than one mol. per cent of the minor constituent is obtained. In Example (1) a rod-shaped piece of material 2 (see Fig. 4) such as germanium, is placed in a crucible boat 6 with a purified seed crystal 4. Depressions 8 are cut in the surface of the charge 2, and predetermined quantities of an alloying agent 10 placed therein. The crucible 6 is placed in a tube 11 and gradually propelled through a ring-shaped induction heater 12. The material adjacent to the seed crystal 4 melts first and recrystallizes on the seed crystal 4, successive segments of the charge 2 then being melted and recrystallized. Larger and larger amounts of the alloying agent are incorporated in the growing crystal. In Example (2) a tapered bar 21 (Fig. 3) of germanium is placed in the crucible 6 over a bar 11 of silicon with a wedgeshaped end 16, and zone melted as in Example (1), a single crystal growing on a seed crystal 4. In Example (3) silicon 20 (Fig. 5) is melted in a crucible 18, and a seed crystal 22 is touched on to the surface of the melt and slowly withdrawn so that a single crystal 23 is grown. As the seed crystal 22 is withdrawn a rod 26 of germanium is gradually fed to the melt 20. The crystal 23 which is grown is initially pure silicon with the concentration of germanium gradually increasing along its length until a desired composition is reached and maintained by a feed of fresh material to the melt. Tin, lead or titanium may be substituted for germanium or silicon in the examples, and cadmium telluride and gallium antimonide may be alloyed with agents such as germanium and silicon.

3. 发明授权

US2841509A Method of doping semi-conductive material 失效
标题翻译：掺杂半导体材料的方法
公开(公告)号：US2841509A
公开(公告)日：1958-07-01
申请号：US50423055
申请日：1955-04-27
申请人： RCA CORP
发明人： JENSEN ROBERT V , LAFF ROBERT A
IPC分类号： C30B13/10 , C30B15/04 , H01L21/00
CPC分类号： C30B15/04 , C30B13/10 , H01L21/00 , Y10S56/02 , Y10S420/903

4. 发明授权

US2902350A Method for single crystal growth 失效
标题翻译：单晶生长方法
公开(公告)号：US2902350A
公开(公告)日：1959-09-01
申请号：US47673454
申请日：1954-12-21
申请人： RCA CORP
发明人： JENNY DIETRICH A , JENSEN ROBERT V
IPC分类号： C30B13/30
CPC分类号： C30B13/30 , Y10S148/074

5. 发明授权

US2872299A Preparation of reactive materials in a molten non-reactive lined crucible 失效
标题翻译：在熔融非反应性内衬坩埚中制备反应性材料
公开(公告)号：US2872299A
公开(公告)日：1959-02-03
申请号：US47205454
申请日：1954-11-30
申请人： RCA CORP
发明人： CELMER PHILIP R , JENSEN ROBERT V
IPC分类号： B01J6/00 , C01B33/02 , C30B15/10 , F27B14/00 , F27B14/08 , F27B14/10
CPC分类号： F27B14/08 , B01J6/005 , C01B33/02 , C30B15/10 , F27B14/10 , F27B2014/002 , F27M2001/03 , Y10S117/90 , Y10T117/1032

6. 发明授权

US2789039A Method and apparatus for zone melting 失效
标题翻译：区域熔化的方法和装置
公开(公告)号：US2789039A
公开(公告)日：1957-04-16
申请号：US37640453
申请日：1953-08-25
申请人： RCA CORP
发明人： JENSEN ROBERT V
IPC分类号： C22C27/02 , C30B13/16
CPC分类号： C30B13/16 , C22C27/02 , Y10S117/90 , Y10S117/906 , Y10T117/1088

7. 发明专利

CA545225A SEMI-CONDUCTOR ALLOYS 未知
公开(公告)号：CA545225A
公开(公告)日：1957-08-20
申请号：CA545225D
申请人： RCA CORP
发明人： JENSEN ROBERT V

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