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    • 5. 发明申请
    • HIGH-SPEED MEMORY PACKAGE
    • 高速存储器包
    • WO2008103752A1
    • 2008-08-28
    • PCT/US2008/054455
    • 2008-02-20
    • RAMBUS INC.LI, Ming
    • LI, Ming
    • H01L23/60
    • H01L23/552H01L23/49838H01L2224/0554H01L2224/05567H01L2224/05573H01L2224/11015H01L2224/11334H01L2924/00014H01L2924/3011H01L2224/05599H01L2224/0555H01L2224/0556
    • The semiconductor package includes a dielectric layer, a trace layer, a conductive layer, a die and an underfill layer. The dielectric layer has first side and an opposing dielectric layer second side. Multiple vias extend through the dielectric layer from the dielectric layer first side to the dielectric layer second side. Multiple solder balls are disposed at the dielectric layer second side. Each of the solder balls is electrically coupled to a different one of the vias. The die is electrically coupled to the solder balls. The conductive layer is disposed between the dielectric layer second side and the die. The conductive layer defines a window there through for allowing the solder balls to electrically couple to the vias without contacting the conductive layer, i.e., no physical or electrical contact. The underfill layer is formed between the die and the conductive layer, while the trace layer is formed at the dielectric layer first side. Traces of the trace layer electrically couple the vias to other solder balls.
    • 半导体封装包括电介质层,迹线层,导电层,管芯和底部填充层。 电介质层具有第一侧和相对的电介质层第二侧。 多个通孔从电介质层第一侧延伸到电介质层第二侧。 在电介质层第二侧设置多个焊球。 每个焊球电耦合到不同的一个通孔。 模具电耦合到焊球。 导电层设置在电介质层第二侧和管芯之间。 导电层在其上限定了一个窗口,以允许焊球电气耦合到通孔而不接触导电层,即没有物理或电接触。 在芯片和导电层之间形成底部填充层,同时在电介质层第一侧形成迹线层。 痕迹层的迹线将通孔电耦合到其他焊球。