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1. 发明申请

WO2006101450A1 PIEZOELECTRIC THIN FILM RESONATOR 审中-公开
标题翻译：压电薄膜共振器
公开(公告)号：WO2006101450A1
公开(公告)日：2006-09-28
申请号：PCT/SE2006/050041
申请日：2006-03-23
申请人： RADI MEDICAL SYSTEMS AB , KATARDJIEV, Ilia , WINGQVIST, Gunilla , BJURSTRÖM, Johan
发明人： KATARDJIEV, Ilia , WINGQVIST, Gunilla , BJURSTRÖM, Johan
IPC分类号： H03H3/02 , H01L41/24
CPC分类号： H01L41/316 , C23C14/0617 , C23C14/086 , C23C14/225 , H03H3/02
摘要： A method of producing a polycrystalline film of a metal compound, AlN or ZnO, on a substrate with a non-zero mean tilt of the c-axis relative to the surface normal of the substrate, is disclosed. The method comprises deposition of crystallites of said compound onto the substrate that has a suitable surface for crystal growth with tilted c-axis relative to the surface normal by operating a deposition system designed for sputtering of metal atoms from a target, in a gas mixture of inert gas and nitrogen or oxygen, respectively, at a process pressure such that the mean free path of sputtered metal atoms is comparable or larger than the target to substrate distance, the geometry of the deposition system being such that there exists at least one arbitrary area on the substrate where the distribution of the depositing flux is asymmetric relative to the surface normal at that area. A piezoelectric shear wave resonator comprising the polycrystalline film, especially for use in a liquid medium for mass loading and/or viscosity measurements and/or pressure measurements, and particularly for use as a biosensor or a pressure sensor, is also described
摘要翻译：公开了一种在衬底上制造金属化合物的多晶膜AlN或ZnO的方法，该衬底具有c轴相对于衬底的表面法线的非零平均倾斜度。该方法包括将所述化合物的微晶沉积到具有合适表面的晶体上，所述表面具有相对于表面法线倾斜的c轴的晶体生长，通过操作设计用于从靶的溅射金属原子的沉积系统，在惰性气体和氮气或氧气，使得溅射金属原子的平均自由程相当于或大于目标与衬底距离的过程压力，沉积系统的几何形状使得存在至少一个任意区域在衬底上，沉积焊剂的分布相对于该区域的表面法线是不对称的。还描述了包括多晶膜的压电剪切波谐振器，特别是用于用于质量加载和/或粘度测量和/或压力测量的液体介质，特别是用作生物传感器或压力传感器的多晶膜

2. 发明公开

EP1861924A1 PIEZOELECTRIC THIN FILM RESONATOR 有权
标题翻译：压电薄膜谐振器及其制造方法
公开(公告)号：EP1861924A1
公开(公告)日：2007-12-05
申请号：EP06717125.6
申请日：2006-03-23
申请人： RADI MEDICAL SYSTEMS AB
发明人： KATARDJIEV, Ilia , WINGQVIST, Gunilla , BJURSTRÖM, Johan
IPC分类号： H03H3/02 , H01L41/24
CPC分类号： H01L41/316 , C23C14/0617 , C23C14/086 , C23C14/225 , H03H3/02
摘要： A method of producing a polycrystalline film of a metal compound, AlN or ZnO, on a substrate with a non-zero mean tilt of the c-axis relative to the surface normal of the substrate, is disclosed. The method comprises deposition of crystallites of said compound onto the substrate that has a suitable surface for crystal growth with tilted c-axis relative to the surface normal by operating a deposition system designed for sputtering of metal atoms from a target, in a gas mixture of inert gas and nitrogen or oxygen, respectively, at a process pressure such that the mean free path of sputtered metal atoms is comparable or larger than the target to substrate distance, the geometry of the deposition system being such that there exists at least one arbitrary area on the substrate where the distribution of the depositing flux is asymmetric relative to the surface normal at that area. A piezoelectric shear wave resonator comprising the polycrystalline film, especially for use in a liquid medium for mass loading and/or viscosity measurements and/or pressure measurements, and particularly for use as a biosensor or a pressure sensor, is also described

3. 发明授权

EP1861924B1 PIEZOELECTRIC THIN FILM RESONATOR AND METHOD FOR MAKING SAME 有权
标题翻译：压电薄膜谐振器及其制造方法
公开(公告)号：EP1861924B1
公开(公告)日：2010-12-15
申请号：EP06717125.6
申请日：2006-03-23
申请人： RADI MEDICAL SYSTEMS AB
发明人： KATARDJIEV, Ilia , WINGQVIST, Gunilla , BJURSTRÖM, Johan
IPC分类号： H03H3/02 , H01L41/24 , C23C14/22
CPC分类号： H01L41/316 , C23C14/0617 , C23C14/086 , C23C14/225 , H03H3/02
摘要： A method of producing a polycrystalline film of a metal compound, AlN or ZnO, on a substrate with a non-zero mean tilt of the c-axis relative to the surface normal of the substrate, is disclosed. The method comprises deposition of crystallites of said compound onto the substrate that has a suitable surface for crystal growth with tilted c-axis relative to the surface normal by operating a deposition system designed for sputtering of metal atoms from a target, in a gas mixture of inert gas and nitrogen or oxygen, respectively, at a process pressure such that the mean free path of sputtered metal atoms is comparable or larger than the target to substrate distance, the geometry of the deposition system being such that there exists at least one arbitrary area on the substrate where the distribution of the depositing flux is asymmetric relative to the surface normal at that area. A piezoelectric shear wave resonator comprising the polycrystalline film, especially for use in a liquid medium for mass loading and/or viscosity measurements and/or pressure measurements, and particularly for use as a biosensor or a pressure sensor, is also described

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