专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08116043B2 Method and system for providing a magnetic transducer having an improved read sensor synthetic antiferromagnet 有权
标题翻译：用于提供具有改进的读取传感器合成反铁磁体的磁换能器的方法和系统
公开(公告)号：US08116043B2
公开(公告)日：2012-02-14
申请号：US12634589
申请日：2009-12-09
申请人： Qunwen Leng , Jian X. Shen , Feng Liu , Geoffrey W. Anderson
发明人： Qunwen Leng , Jian X. Shen , Feng Liu , Geoffrey W. Anderson
IPC分类号： G11B5/39
CPC分类号： G01R33/098 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , Y10T29/49032 , Y10T428/1121
摘要： A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to the pinning layer, a nonmagnetic layer, and a sensor layer. The SAF resides between the nonmagnetic and pinning layers. The nonmagnetic layer is between the SAF and the sensor layer. The SAF includes a pinned layer, a reference layer, and a nonmagnetic spacer layer between the pinned and reference layers. The pinned layer is magnetically coupled with the reference layer and includes sublayers. A first sublayer has a first blocking temperature distribution (TBD) and a first exchange energy. A second sublayer has a second TBD and a second exchange energy. The first sublayer is between the pinning layer and second sublayer. The first TBD is greater than the second TBD. The first exchange energy is less than the second exchange energy.
摘要翻译：描述了一种用于在磁换能器中提供磁结构的方法和系统。该方法和系统包括提供钉扎层，邻近钉扎层的合成反铁磁（SAF），非磁性层和传感器层。 SAF位于非磁性和钉扎层之间。非磁性层位于SAF和传感器层之间。 SAF在被钉扎层和参考层之间包括钉扎层，参考层和非磁性间隔层。被钉扎层与参考层磁耦合并且包括子层。第一子层具有第一阻挡温度分布（TBD）和第一交换能。第二子层具有第二TBD和第二交换能。第一子层位于钉扎层和第二子层之间。第一个TBD大于第二个TBD。第一交换能量小于第二交换能量。

2. 发明授权

US08164864B2 Method and system for fabricating magnetic transducers with improved pinning 有权
标题翻译：用于制造具有改进钉扎功能的磁换能器的方法和系统
公开(公告)号：US08164864B2
公开(公告)日：2012-04-24
申请号：US12504030
申请日：2009-07-16
申请人： Christian Kaiser , Laurence L. Chen , Qunwen Leng
发明人： Christian Kaiser , Laurence L. Chen , Qunwen Leng
IPC分类号： G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3932 , H01F10/3272 , H01F10/3286 , H01L43/08 , H01L43/12 , Y10T29/49034 , Y10T428/1114
摘要： A method and system for providing a magnetic transducer are disclosed. The method and system include providing a magnetic element that includes a free layer, a pinned layer, and a nonmagnetic spacer layer between the free layer and the pinned layer. The nonmagnetic spacer layer is a tunneling barrier layer. The free layer is configured to be biased in a first direction. The pinned layer has a pinned layer magnetization configured to be pinned in a second direction that is at a first angle from perpendicular to the ABS. The first angle is nonzero and different from ninety degrees. The second direction and the first direction form a second angle that is different from ninety degrees.
摘要翻译：公开了一种用于提供磁换能器的方法和系统。该方法和系统包括在自由层和钉扎层之间提供包括自由层，钉扎层和非磁性间隔层的磁性元件。非磁性间隔层是隧道势垒层。自由层被配置为沿第一方向偏置。钉扎层具有被钉扎层磁化，其被构造成在与ABS垂直的第一角度处于第二方向上被钉扎。第一个角度是非零，不同于九十度。第二方向和第一方向形成与九十度不同的第二角度。

3. 发明授权

US07695761B1 Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer 有权
标题翻译：提供具有结晶阻挡层的自旋隧穿磁性元件的方法和系统
公开(公告)号：US07695761B1
公开(公告)日：2010-04-13
申请号：US11643446
申请日：2006-12-21
申请人： Yong Shen , Qunwen Leng
发明人： Yong Shen , Qunwen Leng
IPC分类号： B05D5/12
CPC分类号： H01F10/3295 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F41/307 , H01L43/12
摘要： The method and system for providing a spin tunneling element are disclosed. The method and system include depositing a pinned layer, a barrier layer, and a free layer. The barrier layer has a first crystal structure and a texture. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The first ferromagnetic is adjacent to the second ferromagnetic layer and between the second ferromagnetic layer and the barrier layer. The first ferromagnetic layer has the first crystal structure and the texture, while the second ferromagnetic layer has a second crystal structure different from the first crystal structure.
摘要翻译：公开了用于提供自旋隧穿元件的方法和系统。该方法和系统包括沉积钉扎层，阻挡层和自由层。阻挡层具有第一晶体结构和纹理。自由层包括第一铁磁层和第二铁磁层。第一铁磁体与第二铁磁层相邻，并且在第二铁磁层与阻挡层之间。第一铁磁层具有第一晶体结构和纹理，而第二铁磁层具有与第一晶体结构不同的第二晶体结构。

4. 发明授权

US07218451B2 Integrated optical multiplexer and demultiplexer 有权
标题翻译：集成光复用器和解复用器
公开(公告)号：US07218451B2
公开(公告)日：2007-05-15
申请号：US11051512
申请日：2005-02-04
申请人： Jerry Lee , Yang Sheng , Qunwen Leng , Yiqiang Li
发明人： Jerry Lee , Yang Sheng , Qunwen Leng , Yiqiang Li
IPC分类号： G02B27/10 , G02B27/14 , G02B27/28 , G02F1/03 , H04J14/00
CPC分类号： G02B6/2713 , G02B6/12007 , G02B6/2766 , G02B6/2773 , G02B6/29361 , G02B6/2938 , G02B6/4246
摘要： Optical multiplexers and demultiplexers are provided. In one implementation an apparatus is provided. The apparatus includes a first laser diode pair, a second laser diode pair, a polarization rotator coupled between the first and the second laser diode pairs, and an output port. The first and second laser diode pairs include a first laser diode, a polarization beam splitter, a first quarter waveplate, a filter; a second quarter waveplate, and a second laser diode. The first and second laser diode pairs are coupled to the polarization rotator at the polarization beam splitter of each laser diode pair. In one implementation the apparatus is operable to multiplex distinct light signals emitted from the first and second laser diodes. In another implementation, an apparatus is provided that is operable to demultiplex an input light beam having a plurality of distinct channels.
摘要翻译：提供光复用器和解复用器。在一个实现中，提供了一种装置。该装置包括第一激光二极管对，第二激光二极管对，耦合在第一和第二激光二极管对之间的偏振旋转器和输出端口。第一和第二激光二极管对包括第一激光二极管，偏振分束器，第一四分之一波片，滤波器; 第二个四分之一波片和第二个激光二极管。第一和第二激光二极管对耦合到每个激光二极管对的偏振分束器处的偏振旋转器。在一个实现中，该装置可操作以复用从第一和第二激光二极管发射的不同光信号。在另一实施方式中，提供一种可操作地对具有多个不同通道的输入光束进行解复用的装置。

5. 发明授权

US08545999B1 Method and system for providing a magnetoresistive structure 有权
标题翻译：提供磁阻结构的方法和系统
公开(公告)号：US08545999B1
公开(公告)日：2013-10-01
申请号：US12035036
申请日：2008-02-21
申请人： Qunwen Leng , Mahendra Pakala , Yong Shen
发明人： Qunwen Leng , Mahendra Pakala , Yong Shen
IPC分类号： G11B5/39 , H01F10/08 , H01L43/12
CPC分类号： G11B5/3909 , G01R33/098 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A method and system for providing a magnetoresistive structure are described. The magnetoresistive structure includes a first electrode, an insertion layer, a crystalline tunneling barrier layer, and a second electrode. The first electrode includes at least a first magnetic material and boron. The crystalline tunneling barrier layer includes at least one constituent. The insertion layer has a first boron affinity. The at least one constituent of the crystalline tunneling barrier layer has at least a second boron affinity that is less than the first boron affinity. The second electrode includes at least a second magnetic material.
摘要翻译：描述了一种用于提供磁阻结构的方法和系统。磁阻结构包括第一电极，插入层，结晶隧道势垒层和第二电极。第一电极至少包括第一磁性材料和硼。结晶隧道势垒层包括至少一种成分。插入层具有第一硼亲合力。结晶隧道势垒层的至少一个成分具有小于第一硼亲和力的至少第二硼亲和力。第二电极包括至少第二磁性材料。

6. 发明授权

US08537502B1 Method and system for providing a magnetic transducer having improved shield-to-shield spacing 有权
公开(公告)号：US08537502B1
公开(公告)日：2013-09-17
申请号：US12363525
申请日：2009-01-30
申请人： Chando Park , Qunwen Leng , Sangmun Oh , Mahendra Pakala
发明人： Chando Park , Qunwen Leng , Sangmun Oh , Mahendra Pakala
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G01R33/093 , G11B5/147 , G11B5/3906 , G11B5/3929 , H01F10/30 , H01F10/3272 , H01L43/08 , Y10T428/1193
摘要： A method and system for providing a magnetic transducer is described. The method and system include providing a magnetic structural barrier layer and a crystalline magnetic layer on the magnetic structural barrier layer. The magnetic structural barrier layer may reside on a shield. The method and system also include providing a nonmagnetic layer on the crystalline magnetic layer. A pinning layer is provided on the nonmagnetic layer. Similarly, a pinned layer is provided on the pinning layer. The pinning layer is magnetically coupled with the pinned layer. The method and system also include providing a free layer and a nonmagnetic spacer layer between the pinned layer and the free layer.

7. 发明授权

US08381391B2 Method for providing a magnetic recording transducer 有权
标题翻译：提供磁记录传感器的方法
公开(公告)号：US08381391B2
公开(公告)日：2013-02-26
申请号：US12493102
申请日：2009-06-26
申请人： Chando Park , Qunwen Leng , Mahendra Pakala
发明人： Chando Park , Qunwen Leng , Mahendra Pakala
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/127 , B82Y10/00 , B82Y25/00 , B82Y40/00 , F27D7/06 , F27D19/00 , G01R33/098 , G11B5/3109 , G11B5/3163 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3268 , H01F41/303 , H01F41/307 , H01L43/08 , H01L43/12 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for providing a magnetic recording transducer is described. The method includes providing a pinned layer for a magnetic element. In one aspect, a portion of a tunneling barrier layer for the magnetic element is provided. The magnetic recording transducer annealed is after the portion of the tunneling barrier layer is provided. The annealing is at a temperature higher than room temperature. A remaining portion of the tunneling barrier layer is provided after the annealing. In another aspect, the magnetic transducer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. In this aspect, the magnetic transducer may be annealed before any portion of the tunneling barrier is provided or after at least a portion of the tunneling barrier is provided. The annealing is performed in the high vacuum annealing apparatus. A free layer for the magnetic element is also provided.
摘要翻译：描述了一种用于提供磁记录换能器的方法。该方法包括提供用于磁性元件的钉扎层。在一个方面，提供了用于磁性元件的隧道势垒层的一部分。退火后的磁记录传感器在提供隧道势垒层的部分之后。退火温度高于室温。在退火之后提供隧道势垒层的剩余部分。另一方面，在对磁换能器退火之前，将磁换能器转移到高真空退火装置。在这方面，在提供隧道势垒的任何部分之前或者在提供至少一部分隧道势垒之后，磁换能器可以被退火。在高真空退火装置中进行退火。还提供了用于磁性元件的自由层。

8. 发明授权

US06914676B2 System and method for optical multiplexing and/or demultiplexing 失效
标题翻译：用于光复用和/或解复用的系统和方法
公开(公告)号：US06914676B2
公开(公告)日：2005-07-05
申请号：US10206449
申请日：2002-07-26
申请人： Jenkin A. Richard , Eric V. Chamness , George H. Guan , Steven J. Benerofe , Qunwen Leng , Anjul K. Katare
发明人： Jenkin A. Richard , Eric V. Chamness , George H. Guan , Steven J. Benerofe , Qunwen Leng , Anjul K. Katare
IPC分类号： G01B11/27 , G02B6/34 , G02B6/42 , G01B11/00 , G02B26/08
CPC分类号： G02B6/4215 , G01B11/27 , G02B6/29311 , G02B6/29362 , G02B6/29365 , G02B6/2938 , G02B6/4227
摘要： Improved methods and systems for routing and aligning beams and optical elements in an optical device include a multiplexing device and/or a demultiplexing device, which includes an optical alignment element (OAE). The OAE can be configured to substantially compensate for the cumulative alignment errors in the beam path. The OAE allows the optical elements in a device, other than the OAE, to be placed and fixed in place without substantially compensating for optical alignment errors. The OAE is inserted into the beam path and adjusted. This greatly increases the ease in the manufacturing of optical devices, especially for devices with numerous optical elements, and lowers the cost of manufacturing. The multiplexing and/or demultiplexing device can reside within a standard small form factor, such as a GBIC. The devices fold the paths of the traversing beams with a geometry which allows a small package.
摘要翻译：用于在光学装置中路由和对准光束和光学元件的改进的方法和系统包括多路复用装置和/或解复用装置，其包括光学对准元件（OAE）。 OAE可以被配置为基本上补偿光束路径中的累积对准误差。 OAE允许将除了OAE之外的装置中的光学元件放置并固定就位，而基本上不补偿光学对准误差。将OAE插入光束路径并进行调整。这大大增加了光学器件的制造的容易性，特别是对于具有许多光学元件的器件，并且降低了制造成本。复用和/或解复用设备可以驻留在诸如GBIC的标准小外形之内。这些装置以允许小包装的几何形状折叠横梁的路径。

9. 发明授权

US08493695B1 Method and system for providing a magnetic read transducer having an improved signal to noise ratio 有权
标题翻译：用于提供具有改善的信噪比的磁读取换能器的方法和系统
公开(公告)号：US08493695B1
公开(公告)日：2013-07-23
申请号：US13170506
申请日：2011-06-28
申请人： Christian Kaiser , Qunwen Leng , Mahendra Pakala , Daniele Mauri
发明人： Christian Kaiser , Qunwen Leng , Mahendra Pakala , Daniele Mauri
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , G01R33/093 , G01R33/098 , G11B5/3929 , H01F10/3272 , H01F41/325 , H01L43/08 , H01L43/12
摘要： A method and system for providing a magnetic read transducer is described. The magnetic read transducer includes a magnetoresistive sensor a shield, and a spin pumping barrier layer. The magnetoresistive sensor includes a pinned layer, a spacer layer, and a free layer. The spacer layer is nonmagnetic and resides between the pinned layer and the free layer. The free layer is between the pinned layer and the shield. The spin pumping barrier layer is between the shield and the free layer.
摘要翻译：描述了一种用于提供磁读取换能器的方法和系统。磁读取传感器包括屏蔽层的磁阻传感器和自旋泵浦阻挡层。磁阻传感器包括钉扎层，间隔层和自由层。间隔层是非磁性的并且位于被钉扎层和自由层之间。自由层位于钉扎层和屏蔽层之间。自旋泵浦阻挡层位于屏蔽层和自由层之间。

10. 发明授权

US08493693B1 Perpendicular magnetic recording transducer with AFM insertion layer 有权
标题翻译：带AFM插入层的垂直磁记录传感器
公开(公告)号：US08493693B1
公开(公告)日：2013-07-23
申请号：US13436694
申请日：2012-03-30
申请人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Cheng-Han Yang
发明人： Yuankai Zheng , Qunwen Leng , Mahendra Pakala , Cheng-Han Yang
IPC分类号： G11B5/127
CPC分类号： G11B5/3906 , G01R33/093 , G11B5/3929 , H01F10/30 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetic sensor is configured to reside in proximity to a recording medium during use. The sensor includes a magnetic top shield and a magnetic bottom shield. A top sensor stack is under the magnetic top shield and includes magnetic sensing layers. A bottom sensor stack is between the magnetic bottom shield and the top sensor stack. The bottom sensor stack includes a magnetic seed stack above the bottom shield, an insertion stack above the magnetic seed stack, and an antiferromagnetic (AFM) layer on and in contact with the insertion stack. A pinned layer is above the AFM layer. An AFM coupling layer is above the pinned layer. In some aspects the insertion stack may include at least one of Ti, Hf, Zr, and Ta. In some aspect, the insertion stack includes a layer of elemental Ti. In other aspects, the insertion stack includes multilayer structures.
摘要翻译：磁传感器被配置为在使用期间驻留在记录介质附近。传感器包括磁性顶部屏蔽和磁性底部屏蔽。顶部传感器堆叠在磁性顶部屏蔽下方，并且包括磁感应层。底部传感器堆叠位于磁性底部屏蔽和顶部传感器叠层之间。底部传感器堆叠包括在底部屏蔽物上方的磁性种子堆叠，在磁性种子堆叠上方的插入堆叠，以及与插入堆叠接触并与其接触的反铁磁（AFM）层。被钉扎层位于AFM层之上。 AFM耦合层位于钉扎层之上。在一些方面，插入叠层可以包括Ti，Hf，Zr和Ta中的至少一种。在一些方面，插入堆叠包括元素Ti层。在其他方面，插入堆叠包括多层结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式