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1. 发明授权

US08758090B2 Polishing method and polishing device 有权
标题翻译：抛光方法和抛光装置
公开(公告)号：US08758090B2
公开(公告)日：2014-06-24
申请号：US13328846
申请日：2011-12-16
申请人： Qun Shao , Li Jiang , Mingqi Li , Qingling Wang
发明人： Qun Shao , Li Jiang , Mingqi Li , Qingling Wang
IPC分类号： B24B37/04
CPC分类号： B24B37/34 , B24B37/245
摘要： A polishing method includes: mounting a wafer on a fixed abrasive polishing pad located on a polishing platen; delivering a polishing slurry to the fixed abrasive polishing pad to polish the wafer; and adsorbing abrasive particles generated during the polishing process with an electrode. The electrode has a polarity opposite to a polarity of charges of the abrasive particles. A polishing device includes a polishing platen, a fixed abrasive polishing pad, a slurry pipeline and a polarity changer having an electrode. Therefore, the abrasive particles generated during the polishing process are removed, which prevents the wafer from being scratched, thereby increasing wafer yield and improving efficiency.
摘要翻译：抛光方法包括：将晶片安装在位于抛光平台上的固定研磨抛光垫上; 将抛光浆料输送到固定研磨抛光垫以抛光晶片; 并用电极吸附在抛光过程中产生的磨料颗粒。电极具有与磨料颗粒的电荷极性相反的极性。抛光装置包括抛光台板，固定研磨抛光垫，浆料管道和具有电极的极性更换器。因此，在抛光过程中产生的磨料颗粒被去除，从而防止晶片被划伤，从而提高晶片的产量并提高效率。

2. 发明申请

US20120190278A1 POLISHING METHOD AND POLISHING DEVICE 有权
标题翻译：抛光方法和抛光装置
公开(公告)号：US20120190278A1
公开(公告)日：2012-07-26
申请号：US13328846
申请日：2011-12-16
申请人： Qun Shao , Li Jiang , Mingqi Li , Qingling Wang
发明人： Qun Shao , Li Jiang , Mingqi Li , Qingling Wang
IPC分类号： B24B1/00
CPC分类号： B24B37/34 , B24B37/245
摘要： A polishing method includes: mounting a wafer on a fixed abrasive polishing pad located on a polishing platen; delivering a polishing slurry to the fixed abrasive polishing pad to polish the wafer; and adsorbing abrasive particles generated during the polishing process with an electrode. The electrode has a polarity opposite to a polarity of charges of the abrasive particles. A polishing device includes a polishing platen, a fixed abrasive polishing pad, a slurry pipeline and a polarity changer having an electrode. Therefore, the abrasive particles generated during the polishing process are removed, which prevents the wafer from being scratched, thereby increasing wafer yield and improving efficiency.
摘要翻译：抛光方法包括：将晶片安装在位于抛光平台上的固定研磨抛光垫上; 将抛光浆料输送到固定研磨抛光垫以抛光晶片; 并用电极吸附在抛光过程中产生的磨料颗粒。电极具有与磨料颗粒的电荷极性相反的极性。抛光装置包括抛光台板，固定研磨抛光垫，浆料管道和具有电极的极性更换器。因此，在抛光过程中产生的磨料颗粒被去除，从而防止晶片被划伤，从而提高晶片的产量并提高效率。

3. 发明授权

US08846535B2 Method of fabricating a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08846535B2
公开(公告)日：2014-09-30
申请号：US13315143
申请日：2011-12-08
申请人： Li Jiang , Mingqi Li , Pulei Zhu
发明人： Li Jiang , Mingqi Li , Pulei Zhu
IPC分类号： H01L21/302 , H01L21/461 , H01L21/02 , H01L29/49 , H01L21/321 , H01L21/28
CPC分类号： H01L29/495 , H01L21/02074 , H01L21/02244 , H01L21/28079 , H01L21/3212
摘要： The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminum to form aluminum gates through a chemical mechanical planarization (CMP) process, the exposed surfaces of the aluminum gates are oxidized with H2O2 solution to form a film of alumina, and the semiconductor device is cleaned.
摘要翻译：本发明公开了半导体器件的制造方法。在通过化学机械平坦化（CMP）工艺除去过量的铝以形成铝门之后，用H 2 O 2溶液氧化铝门的暴露表面以形成氧化铝膜，并清洁半导体器件。

4. 发明申请

US20130105919A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130105919A1
公开(公告)日：2013-05-02
申请号：US13486994
申请日：2012-06-01
申请人： LI JIANG , Mingqi Li , Pulei Zhu
发明人： LI JIANG , Mingqi Li , Pulei Zhu
IPC分类号： H01L29/49 , H01L29/40
CPC分类号： H01L29/4966 , H01L21/28088 , H01L29/401 , H01L29/495 , H01L29/517 , H01L29/518 , H01L29/66545
摘要： A semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device uses an aluminum alloy, rather than aluminum, for a metal gate. Therefore, the surface of the high-k metal gate after the CMP is aluminum alloy rather than pure aluminum, which can greatly reduce defects, such as corrosion, pits and damage, in the metal gate and improve reliability of the semiconductor device.
摘要翻译：提供半导体器件和制造半导体器件的方法。半导体器件使用铝合金而不是铝合金作为金属栅极。因此，CMP后的高k金属栅极的表面是铝合金而不是纯铝，这可以大大减少金属栅极中的腐蚀，凹坑和损伤等缺陷，提高半导体器件的可靠性。

5. 发明申请

US20120164923A1 POLISHING METHOD 审中-公开
标题翻译：抛光方法
公开(公告)号：US20120164923A1
公开(公告)日：2012-06-28
申请号：US13178968
申请日：2011-07-08
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： B24B1/00
CPC分类号： B24B53/017
摘要： A polishing method is disclosed, which includes: conditioning a polishing pad, after polishing metal material of a previous wafer; spraying organic acid solution to the polishing pad; spraying deionized water to the polishing pad; performing a water-removing treatment on the polishing pad; and spraying polishing liquid to the polishing pad and polishing metal material of a next wafer. The method can prevent scratches on the surface of metal material of wafers and improve yield rate.
摘要翻译：公开了一种抛光方法，其包括：在抛光前一晶片的金属材料之后调节抛光垫; 将有机酸溶液喷洒到抛光垫上; 将去离子水喷在抛光垫上; 对抛光垫进行除水处理; 并将抛光液喷射到抛光垫上并抛光下一个晶片的金属材料。该方法可以防止晶片金属材料表面划伤，提高成品率。

6. 发明授权

US08721401B2 Method for cleaning a polishing pad 有权
标题翻译：清洁抛光垫的方法
公开(公告)号：US08721401B2
公开(公告)日：2014-05-13
申请号：US13163667
申请日：2011-06-17
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： B24B53/017 , B24B53/00
CPC分类号： B24B53/017
摘要： A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.
摘要翻译：一种用于清洁抛光垫的方法包括：在抛光垫上分配第一量的去离子水; 在抛光垫上分配第一量的去离子水后，用酸度/碱度溶液清洗抛光垫; 用酸度/碱度溶液清洗抛光垫后用第二量的去离子水冲洗抛光垫; 从抛光垫去除酸度/碱度溶液。在随后的CMP工艺中，该方法包括抛光GST材料装置以获得GST材料装置的改进的性能。

7. 发明申请

US20120315762A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20120315762A1
公开(公告)日：2012-12-13
申请号：US13315143
申请日：2011-12-08
申请人： LI JIANG , Mingqi Li , Pulei Zhu
发明人： LI JIANG , Mingqi Li , Pulei Zhu
IPC分类号： H01L21/306
CPC分类号： H01L29/495 , H01L21/02074 , H01L21/02244 , H01L21/28079 , H01L21/3212
摘要： The present invention discloses a method for fabricating semiconductor devices. After removing excessive aluminium to form aluminium gates through a chemical mechanical planarization (CMP) process, the exposed surfaces of the aluminium gates are oxidized with H2O2 solution to form a film of alumina, and the semiconductor device is cleaned.
摘要翻译：本发明公开了半导体器件的制造方法。在通过化学机械平坦化（CMP）工艺除去过量的铝以形成铝门之后，铝浇口的暴露表面用H 2 O 2溶液氧化以形成氧化铝膜，并且清洁半导体器件。

8. 发明申请

US20120164922A1 METHOD FOR CLEANING A POLISHING PAD 有权
标题翻译：清洗抛光垫的方法
公开(公告)号：US20120164922A1
公开(公告)日：2012-06-28
申请号：US13163667
申请日：2011-06-17
申请人： LI JIANG , Mingqi Li
发明人： LI JIANG , Mingqi Li
IPC分类号： B24B53/00
CPC分类号： B24B53/017
摘要： A method for cleaning a polishing pad includes dispensing a first amount of deionized water on the polishing pad; cleaning the polishing pad with an acidity/alkalinity solution after dispensing the first amount of deionized water on the polishing pad; rinsing the polishing pad with a second amount of deionized water after cleaning the polishing pad with the acidity/alkalinity solution; removing the acidity/alkalinity solution from the polishing pad. In a subsequent CMP process, the method includes polishing a GST material device for obtaining an improved performance of the GST material device.
摘要翻译：一种用于清洁抛光垫的方法包括：在抛光垫上分配第一量的去离子水; 在抛光垫上分配第一量的去离子水后，用酸度/碱度溶液清洗抛光垫; 用酸度/碱度溶液清洗抛光垫后用第二量的去离子水冲洗抛光垫; 从抛光垫去除酸度/碱度溶液。在随后的CMP工艺中，该方法包括抛光GST材料装置以获得GST材料装置的改进的性能。

9. 发明申请

US20120142150A1 METHOD FOR FORMING METAL GATE AND MOS TRANSISTOR 有权
标题翻译：形成金属栅和MOS晶体管的方法
公开(公告)号：US20120142150A1
公开(公告)日：2012-06-07
申请号：US13176678
申请日：2011-07-05
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/66545 , H01L21/31053 , H01L29/6653 , H01L29/7833
摘要： The invention provides a method for forming a metal gate and a method for forming a MOS transistor. The method for forming a metal gate includes: providing a substrate; forming a sacrificial oxide layer and a polysilicon gate on the substrate; forming a silicon oxide layer on sidewalls of the sacrificial oxide layer and the polysilicon gate; forming a stop layer that covers the substrate; removing a part of the stop layer in the spacers; forming a second interlayer dielectric layer that covers the first interlayer dielectric layer, the spacers and the polysilicon gate; polishing the second interlayer dielectric layer to expose the spacers and the polysilicon gate; removing the polysilicon gate to form a trench; removing the sacrificial oxide layer in the trench; and forming a metal gate in the trench. The invention prevents from recesses and therefore metal bridge and metal residuals in the recesses.
摘要翻译：本发明提供一种用于形成金属栅极的方法和用于形成MOS晶体管的方法。形成金属栅极的方法包括：提供基板; 在所述基板上形成牺牲氧化物层和多晶硅栅极; 在所述牺牲氧化物层和所述多晶硅栅极的侧壁上形成氧化硅层; 形成覆盖所述基板的停止层; 去除隔离物中的一部分停止层; 形成覆盖所述第一层间电介质层，所述间隔物和所述多晶硅栅极的第二层间电介质层; 抛光所述第二层间电介质层以暴露所述间隔物和所述多晶硅栅极; 去除多晶硅栅极以形成沟槽; 去除沟槽中的牺牲氧化物层; 并在沟槽中形成金属栅极。本发明防止了凹槽中的金属桥和凹陷中的金属残留物。

10. 发明授权

US08748279B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08748279B2
公开(公告)日：2014-06-10
申请号：US13323489
申请日：2011-12-12
申请人： Li Jiang , Mingqi Li
发明人： Li Jiang , Mingqi Li
IPC分类号： H01L21/336 , H01L21/00
CPC分类号： H01L21/28123
摘要： The present invention discloses a method of manufacturing semiconductor devices. The method includes a step of performing a chemical mechanical planarization processing on a poly-silicon layer before fabricating a poly-silicon gate such that the poly-silicon gates obtained in subsequent fabrication process are kept at the same height, which thus avoids the silicon nitride residues issue that occurs in the prior art. Therefore, the present invention is capable of enhancing product yield of semiconductor devices and improving device performances.
摘要翻译：本发明公开了半导体器件的制造方法。该方法包括在制造多晶硅栅极之前对多晶硅层进行化学机械平面化处理的步骤，使得在随后的制造工艺中获得的多晶硅栅极保持在相同的高度，从而避免了氮化硅在现有技术中发生的残留问题。因此，本发明能够提高半导体器件的产量，提高器件性能。

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