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1. 发明授权

US06908689B1 Ruthenium-aluminum underlayer for magnetic recording media 失效
标题翻译：用于磁记录介质的钌铝底层
公开(公告)号：US06908689B1
公开(公告)日：2005-06-21
申请号：US10022728
申请日：2001-12-20
申请人： Qixu Chen , Zhong Wu , Samuel D. Harkness, IV , Rajiv Y. Ranjan
发明人： Qixu Chen , Zhong Wu , Samuel D. Harkness, IV , Rajiv Y. Ranjan
IPC分类号： G11B5/64 , G11B5/73 , G11B5/66
CPC分类号： G11B5/7325 , G11B5/656 , Y10T428/12465 , Y10T428/12743 , Y10T428/1275 , Y10T428/12931 , Y10T428/26 , Y10T428/31
摘要： A magnetic recording medium containing a B-2 structured ruthenium-aluminum underlayer comprising a (200) crystallographic orientation with a thickness from about 50 Å to about 800 Å, and a magnetic layer with a Co(11.0) crystallographic orientation, and a method of making the same are disclosed. The medium deposited on mechanically textured and surface-oxidized NiP film has a relatively high remanent coercivity and a relatively high signal to medium noise ratio even at low OR-Mrt.
摘要翻译：一种含有B层结构的钌 - 铝底层的磁记录介质，其包含厚度为约至约800埃的（200）结晶取向和具有Co（11.0）结晶取向的磁性层，以及一种做出相同的披露。沉积在机械织构和表面氧化的NiP膜上的介质具有相对较高的残余矫顽力和甚至在低OR-Mrt时相对较高的信噪比。

2. 发明授权

US06432562B1 Magnetic recording medium with a nialru seedlayer 有权
标题翻译：具有nialru种子层的磁记录介质
公开(公告)号：US06432562B1
公开(公告)日：2002-08-13
申请号：US09393328
申请日：1999-09-10
申请人： Stella Z. Wu , Qixu Chen , Samuel D. Harkness, IV , Rajiv Y. Ranjan
发明人： Stella Z. Wu , Qixu Chen , Samuel D. Harkness, IV , Rajiv Y. Ranjan
IPC分类号： G11B566
CPC分类号： G11B5/732 , G11B5/7325 , G11B5/8404 , Y10S428/90 , Y10T428/265
摘要： High areal density magnetic recording media exhibiting high magnetic performance, e.g., narrow PW50, and high OW, and high SNR, are formed with a NiAlRu seedlayer. Embodiments of the present invention include sputter depositing a NiAlRu seedlayer on a non-magnetic substrate and sequentially depositing thereon a Cr or Cr alloy underlayer, e.g., CrMo, CrMn, CrV or CrW, a magnetic layer, e.g., a Co—Cr-containing magnetic alloy layer, and a protective overcoat, e.g., a carbon-containing protective overcoat.
摘要翻译：使用NiAlRu种子层形成表现出高磁性能的高密度磁记录介质，例如窄PW50，高OW，高SNR。本发明的实施例包括在非磁性衬底上溅射沉积NiAlRu种子层并且在其上依次沉积Cr或Cr合金底层，例如CrMo，CrMn，CrV或CrW，磁性层，例如含Co-Cr 磁性合金层和保护性外涂层，例如含碳保护性外涂层。

3. 发明授权

US07235314B2 Inter layers for perpendicular recording media 有权
标题翻译：用于垂直记录介质的层间
公开(公告)号：US07235314B2
公开(公告)日：2007-06-26
申请号：US10797111
申请日：2004-03-11
申请人： Qixu Chen , Chung-Hee Chang , Li-Lien Lee , Samuel D. Harkness, IV
发明人： Qixu Chen , Chung-Hee Chang , Li-Lien Lee , Samuel D. Harkness, IV
IPC分类号： G11B5/66 , G11B5/70
CPC分类号： G11B5/732 , G11B5/65 , G11B5/667 , G11B5/7325
摘要： A magnetic recording medium, the order of layers in which is the substrate, the soft underlayer, the seedlayer, the 1st RuCrx-containing interlayer, the 2nd RuCrx-containing interlayer and the magnetic recording layer with preferably a oxides or nitrides-containing magnetic layer comprising grains, is disclosed. High-chromium ruthenium-chromium alloy used as inter layers significantly enhances coercivity and SMNR preferably due to the improved lattice match between RuCr inter layers and CoPt-based magnetic recording layers, and the surface energy of RuCr layers contributes to the performance improvement with the high-chromium addition into Ru inter layers.
摘要翻译：磁记录介质，层的顺序为衬底，软底层，种子层，含有CrCrNi x的中间层，2层，并且具有优选含有包含晶粒的含氧化物或含氮化物的磁性层的磁记录层被公开。用作层间的高铬钌 - 铬合金显着提高了矫顽力和SMNR，这主要是由于RuCr层间和CoPt基磁记录层之间的晶格匹配得到改善，RuCr层的表面能有助于提高性能 - 铬添加到Ru层间。

4. 发明授权

US06641936B1 Magnetic media with high Cr content, non-magnetic CoCrPt intermediate layers 失效
标题翻译：具有高Cr含量的磁性介质，非磁性CoCrPt中间层
公开(公告)号：US06641936B1
公开(公告)日：2003-11-04
申请号：US10020847
申请日：2001-12-18
申请人： Qixu Chen , Shanghsien Rou , Samuel D. Harkness, IV , Rajiv Yadav Ranjan
发明人： Qixu Chen , Shanghsien Rou , Samuel D. Harkness, IV , Rajiv Yadav Ranjan
IPC分类号： G11B566
CPC分类号： G11B5/732 , G11B5/656 , G11B5/7325 , G11B5/851 , Y10S428/90 , Y10T428/12465 , Y10T428/12854 , Y10T428/265
摘要： A magnetic recording medium comprises, in overlying sequence from a surface of a non-magnetic substrate: at least one Cr-containing or B2-structured underlayer; a substantially non-magnetic CoCrPt alloy intermediate layer; and at least one CoCrPtB ferromagnetic alloy recording layer; wherein the intermediate layer of substantially non-magnetic CoCrPt alloy has a composition which facilitates Co (11.0) or (10.0) crystallographic orientation of the at least one CoCrPtB ferromagnetic alloy recording layer.
摘要翻译：磁记录介质以非磁性基板的表面叠层：至少一个含Cr或B2结构的底层;基本上非磁性的CoCrPt合金中间层; 和至少一个CoCrPtB铁磁合金记录层;其中基本上非磁性的CoCrPt合金的中间层具有促进至少一种CoCrPtB铁磁性合金记录层的Co（11.0）或（10.0）晶体取向的组成。

5. 发明授权

US07521136B1 Coupling enhancement for medium with anti-ferromagnetic coupling 失效
标题翻译：具有反铁磁耦合介质的耦合增强
公开(公告)号：US07521136B1
公开(公告)日：2009-04-21
申请号：US11358128
申请日：2006-02-22
申请人： Stella Wu Zhong , Samuel D. Harkness, IV
发明人： Stella Wu Zhong , Samuel D. Harkness, IV
IPC分类号： G11B5/66
CPC分类号： G11B5/7325 , G11B5/656 , G11B5/66 , Y10T428/12465 , Y10T428/12646 , Y10T428/12861 , Y10T428/12868 , Y10T428/12875 , Y10T428/12931 , Y10T428/12986 , Y10T428/24942 , Y10T428/265 , Y10T428/31
摘要： Laminated magnetic recording medium with two Co-containing layers separated by a non-magnetic Ru-containing interlayer is stabilized by Ru-containing layer between the recording layers and Co-containing stabilization layers through anti-ferromagnetic coupling. The insertion of Co layer beneath Ru spacer has resulted in increased coupling, and further coupling enhancement is achieved by low pressure process of Co and Ru layers.
摘要翻译：通过非磁性含Ru中间层分离的具有两个含Co层的层压磁记录介质通过反铁磁耦合在记录层和含Co稳定层之间的含Ru层保持稳定。 Co层下面的Co层的插入导致耦合增加，并且通过Co和Ru层的低压工艺实现进一步的耦合增强。

6. 发明授权

US07968792B2 Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same 有权
标题翻译：量子点敏化宽带隙半导体光电器件及其制造方法
公开(公告)号：US07968792B2
公开(公告)日：2011-06-28
申请号：US11713652
申请日：2007-03-05
申请人： Samuel D. Harkness, IV , Hans J. Richter
发明人： Samuel D. Harkness, IV , Hans J. Richter
IPC分类号： H01L31/0328 , H01L31/0352
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译：宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。活性PV层包括具有Eg≥2.0eV的宽带隙（WBG）半导体材料，其形式为限定至少两个开放空间的2维矩阵，以及具有Eg <2.0eV的较窄带隙半导体材料，形式为的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。活性PV层的％。

7. 发明授权

US08975513B2 Quantum dot-sensitized wide bandgap semiconductor heterojunction photovoltaic devices 有权
标题翻译：量子点敏化宽带隙半导体异质结光伏器件
公开(公告)号：US08975513B2
公开(公告)日：2015-03-10
申请号：US13171356
申请日：2011-06-28
申请人： Samuel D. Harkness, IV , Hans J. Richter
发明人： Samuel D. Harkness, IV , Hans J. Richter
IPC分类号： H01L31/032 , H01L31/0352 , H01L31/06
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg≧2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译：宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。活性PV层包括具有Eg≥2.0eV的宽带隙（WBG）半导体材料，其形式为限定至少两个开放空间的2维矩阵，以及具有Eg <2.0eV的较窄带隙半导体材料，形式为的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。活性PV层的％。

8. 发明授权

US08673466B2 CoPtCr-based bit patterned magnetic media 有权
标题翻译：基于CoPtCr的位图形磁介质
公开(公告)号：US08673466B2
公开(公告)日：2014-03-18
申请号：US11525958
申请日：2006-09-25
申请人： Dieter K. Weller , Hans J. Richter , Samuel D. Harkness, IV , Erol Girt
发明人： Dieter K. Weller , Hans J. Richter , Samuel D. Harkness, IV , Erol Girt
IPC分类号： G11B5/66
CPC分类号： G11B5/656 , G11B5/667 , G11B5/732 , G11B5/855
摘要： A bit patterned magnetic recording medium comprises a substrate having a surface, and a plurality of spaced apart magnetic elements on the surface, each element constituting a discrete magnetic domain or bit of the same structure and comprised of a stack of thin film layers including in order from the substrate surface: a seed layer; and a perpendicular magnetic recording layer in contact with a surface of the seed layer and comprising a Co 1-x-yPtxCry alloy material, where 0.05≦x≦0.35 and 0≦y≦0.15. The Co1-x-yPtxCry alloy material has a first order magnetic anisotropy constant K1 up to about 2×107 erg/cm3, a saturation magnetization Ms up to about 1200 emu/cm3, an anisotropy field HK=2K1/Ms up to about 35 kOe, a hexagonal (0001) crystal structure with c-axis perpendicular to a surface thereof, and an X-Ray diffraction (XRD) rocking curve with a full width at half maximum (FWHM) of ˜5° or less.
摘要翻译：位图形磁记录介质包括具有表面的基板和表面上的多个间隔开的磁性元件，每个元件构成相同结构的离散磁畴或位，并且包括一层薄层，从基底表面：种子层; 以及与种子层的表面接触并包括Co 1-x-yPt x Cry合金材料的垂直磁记录层，其中0.05≤x≤0.35和0≤y≤0.15。 Co1-x-yPtxCry合金材料具有高达约2×107erg / cm3的一阶磁各向异性常数K1，高达约1200emu / cm3的饱和磁化强度Ms，高达约35的各向异性磁场HK = 2K1 / Ms kOe，具有垂直于其表面的c轴的六边形（0001）晶体结构，以及具有约5°或更小的全半宽度（FWHM）的X射线衍射（XRD）摇摆曲线。

9. 发明授权

US08119263B2 Tuning exchange coupling in magnetic recording media 有权
标题翻译：调谐磁记录介质中的交换耦合
公开(公告)号：US08119263B2
公开(公告)日：2012-02-21
申请号：US11231796
申请日：2005-09-22
申请人： Thomas Patrick Nolan , Samuel D. Harkness, IV
发明人： Thomas Patrick Nolan , Samuel D. Harkness, IV
IPC分类号： G11B5/66
CPC分类号： G11B5/66 , G11B5/65 , G11B5/851
摘要： A magnetic recording medium having a substrate, a first magnetic layer and a second magnetic layer, in this order, wherein an exchange coupling in the first magnetic layer is lower than an exchange coupling in the second magnetic layer, and the first and second magnetic layers are in a film stack so that magnetic grains in the first magnetic layer are exchange coupled by a pathway through the second magnetic layer is disclosed. A method of manufacturing a magnetic recording medium by obtaining a substrate, depositing a first magnetic layer at a first sputter gas pressure and depositing a second magnetic layer at a second sputter gas pressure, in this order, wherein the first sputter gas pressure is higher than the second sputter gas pressure, and an exchange coupling in the first magnetic layer is lower than an exchange coupling in the second magnetic layer is also disclosed.
摘要翻译：一种具有基板，第一磁性层和第二磁性层的磁记录介质，其中第一磁性层中的交换耦合低于第二磁性层中的交换耦合，第一和第二磁性层公开了通过第二磁性层的路径将第一磁性层中的磁性颗粒交换耦合的薄膜叠层。一种通过获得衬底制造磁记录介质的方法，以第一溅射气体压力沉积第一磁性层并以第二溅射气体压力沉积第二磁性层，其中第一溅射气体压力高于第二溅射气体压力和第一磁性层中的交换耦合也低于第二磁性层中的交换耦合。

10. 发明申请

US20120003773A1 QUANTUM DOT SENSITIZED WIDE BANDGAP SEMICONDUCTOR PHOTOVOLTAIC DEVICES & METHODS OF FABRICATING SAME 有权
标题翻译：量子点敏感宽带半导体光电器件及其制造方法
公开(公告)号：US20120003773A1
公开(公告)日：2012-01-05
申请号：US13171356
申请日：2011-06-28
申请人： Samuel D. Harkness, IV , Hans J. Richter
发明人： Samuel D. Harkness, IV , Hans J. Richter
IPC分类号： H01L31/18 , B82Y99/00
CPC分类号： H01L31/0352 , H01L31/0324 , H01L31/06 , Y02E10/50
摘要： A quantum dot (QD) sensitized wide bandgap (WBG) semiconductor heterojunction photovoltaic (PV) device comprises an electron conductive layer; an active photovoltaic (PV) layer adjacent the electron conductive layer; a hole conductive layer adjacent the active PV layer; and an electrode layer adjacent the hole conductive layer. The active PV layer comprises a wide bandgap (WBG) semiconductor material with Eg>2.0 eV, in the form of a 2-dimensional matrix defining at least two open spaces, and a narrower bandgap semiconductor material with Eg
摘要翻译：宽带隙（WBG）半导体异质结光伏（PV）器件的量子点（QD）包括电子传导层; 邻近电子传导层的活性光伏（PV）层; 邻近活性PV层的孔导电层; 以及邻近导电层的电极层。活性PV层包括具有限定至少两个开放空间的2维矩阵形式的Eg> 2.0eV的宽带隙（WBG）半导体材料和具有Eg <2.0eV的较窄带隙半导体材料，其形式为的量子点（QD）填充由WBG半导体材料的矩阵限定的每个开放空间并与其建立异质结。活性PV层优选通过共溅射沉积工艺制造，并且QD构成约40至约90vol。活性PV层的％。

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