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    • 1. 发明授权
    • Multilayer perpendicular media with high-boron or high-carbon additives to CoCr films
    • 多层垂直介质与高硼或高碳添加剂CoCr膜
    • US07323259B2
    • 2008-01-29
    • US10402772
    • 2003-03-28
    • Qixu ChenCharles BruckerRajiv Yadav Ranjan
    • Qixu ChenCharles BruckerRajiv Yadav Ranjan
    • G11B5/66G11B5/70
    • G11B5/667G11B5/656G11B5/66G11B5/7325Y10T428/265
    • Carbon or boron is added into the CoCr layers of a multiplayer perpendicular magnetic media structure to reduce media noise. The perpendicular magnetic media structure has sharp interfaces between Co-alloy layers and Pd or Pt layers and significantly reduced exchange coupling. In accordance with one embodiment of the invention, the perpendicular magnetic media structure with carbon or boron additives is 700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/158 Å FeCo30.8B12/17 Å Ta/49 Å ITO/33 Å CoCr37Ru10/2.5 Å COy/2.5 Å C/[(CoCr9)C6.8/Pd]19/50 Å CHN. [(CoCr9)C6.8/Pd]19 means 19 layers of the bi-layer stack (CoCr9)C6.8/Pd. TaOx stands for surface-oxidized Ta and COy stands for C oxides. ITO stands for Indium Tin Oxide and consists of In2O3 and Sn2O5 at 80 and 20 molecular percent respectively. CHN refers to hydrogenated and nitrogenated carbon.
    • 将碳或硼添加到多玩家垂直磁性介质结构的CoCr层中以降低介质噪声。 垂直磁介质结构在Co合金层和Pd或Pt层之间具有明显的界面,并显着降低了交换耦合。 根据本发明的一个实施方案,具有碳或硼添加剂的垂直磁性介质结构是700埃,30.8×12/20埃, 30/100FeCo 30.8 B 12/20Åx xÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅÅB B B B B B B B B B B B > 12/20ÅTaO x / 158ÅFeCo 30.8 B 12/17Å/ 49ITO / 33Å CoCr / / / / / / / /((C)Cr C > 6.8 / Pd] 19/50埃。 [(CoCr 9)C 6.8 / Pd] 19表示19层双层堆叠(CoCr 9 / / SUB >)C 6.8 / Pd。 TaO x代表表面氧化的Ta,CO 2代表C氧化物。 ITO代表氧化铟锡,由80和20组成的In 2 N 2 O 3和Sn 2 O 5 O 5组成。 分子百分比。 CHN是指氢化和氮化的碳。
    • 5. 发明申请
    • Multilayer perpendicular media with high-boron or high-carbon additives to CoCr films
    • 多层垂直介质与高硼或高碳添加剂CoCr膜
    • US20050037237A1
    • 2005-02-17
    • US10402772
    • 2003-03-28
    • Qixu ChenCharles BruckerRajiv Ranjan
    • Qixu ChenCharles BruckerRajiv Ranjan
    • G11B5/64G11B5/66G11B5/73
    • G11B5/667G11B5/656G11B5/66G11B5/7325Y10T428/265
    • Carbon or boron is added into the CoCr layers of a multiplayer perpendicular magnetic media structure to reduce media noise. The perpendicular magnetic media structure has sharp interfaces between Co-alloy layers and Pd or Pt layers and significantly reduced exchange coupling. In accordance with one embodiment of the invention, the perpendicular magnetic media structure with carbon or boron additives is 700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/700 Å FeCo30.8B12/20 Å TaOx/158 Å FeCo30.8B12/17 Å Ta/49 Å ITO/33 Å CoCr37Ru10/2.5 Å COy/2.5 Å C/[(CoCr9)C6.8/Pd]19/50 Å CHN. [(CoCr9)C6.8/Pd]19 means 19 layers of the bi-layer stack (CoCr9)C6.8/Pd. TaOx stands for surface-oxidized Ta and COy stands for C oxides . ITO stands for Indium Tin Oxide and consists of In2O3 and Sn2O5 at 80 and 20 molecular percent respectively. CHN refers to hydrogenated and nitrogenated carbon.
    • 将碳或硼添加到多玩家垂直磁性介质结构的CoCr层中以降低介质噪声。 垂直磁介质结构在Co合金层和Pd或Pt层之间具有明显的界面,并显着降低了交换耦合。 根据本发明的一个实施方案,具有碳或硼添加剂的垂直磁介质结构为700埃FeCo30.8B12 / 20AaOx / 700ÅFeCo30.8B12 / 20ÅTaOx / 700ÅFeCo30.8B12 /ÅTaOx / 158ÅFeCo30.8B12 / 17ÅTa / 49ÅITO / 33ÅCoCr37Ru10 / 2.5Åy/ 2.5ÅC / [(CoCr9)C6.8 / Pd] 19/50ÅCHN。 [(CoCr9)C6.8 / Pd] 19表示19层双层堆叠(CoCr9)C6.8 / Pd。 TaOx代表表面氧化的Ta,COy表示C氧化物。 ITO代表氧化铟锡,分别由80和20分子%的In 2 O 3和Sn 2 O 5构成。 CHN是指氢化和氮化的碳。
    • 7. 发明申请
    • Rapid cycle time gas burster
    • 快速循环时间气喘
    • US20050082161A1
    • 2005-04-21
    • US10689057
    • 2003-10-21
    • Charles Brucker
    • Charles Brucker
    • C23C14/00C23C14/32
    • C23C14/0073
    • An apparatus for rapidly establishing at least one preselected gas pressure in a process chamber comprising: (a) a chamber defining an interior space adapted to be maintained at a reduced pressure; and (b) a gas supply means for supplying at least one burst of gas to the chamber for rapidly establishing the at least one preselected gas pressure in the chamber, the gas supply means including: (i) a source of the gas; (ii) a supply ballast fluidly connected to the gas source for receiving the gas from the source; (iii) at least one burst ballast fluidly connected to the supply ballast via a metering valve for receiving the gas from the supply ballast; and (iv) an on/off valve fluidly connected to the at least one burst ballast and the chamber for supplying the process chamber with the gas from the at least one burst ballast.
    • 一种用于在处理室中快速建立至少一个预选气体压力的装置,包括:(a)限定适于保持在减压下的内部空间的室; 和(b)气体供应装置,用于向所述室供应至少一个气体,用于在所述室中快速建立所述至少一个预选气体压力,所述气体供应装置包括:(i)所述气体源; (ii)流体连接到气源的用于从源接收气体的供应镇流器; (iii)经由计量阀流体地连接到所述电源镇流器的至少一个爆破镇流器,用于接收来自所述电源镇流器的气体; 以及(iv)流体连接到所述至少一个爆破式镇流器和所述室的开/关阀,用于向所述处理室提供来自所述至少一个爆发式镇流器的气体。